statistiche ricercatore

Continente	#
NA - Nord America	1.600
AS - Asia	600
EU - Europa	409
SA - Sud America	73
Continente sconosciuto - Info sul continente non disponibili	28
AF - Africa	10
OC - Oceania	1
Totale	2.721

Nazione	#
US - Stati Uniti d'America	1.561
SG - Singapore	240
GB - Regno Unito	134
CN - Cina	131
HK - Hong Kong	77
VN - Vietnam	69
BR - Brasile	57
DE - Germania	50
IT - Italia	37
SE - Svezia	35
RU - Federazione Russa	29
FI - Finlandia	26
UA - Ucraina	25
FR - Francia	24
CA - Canada	22
TR - Turchia	20
IN - India	11
BG - Bulgaria	10
KR - Corea	9
PT - Portogallo	9
ID - Indonesia	8
NL - Olanda	7
BD - Bangladesh	6
PL - Polonia	6
AR - Argentina	5
EC - Ecuador	5
ES - Italia	4
MA - Marocco	4
MX - Messico	4
PK - Pakistan	4
TH - Thailandia	4
IQ - Iraq	3
IR - Iran	3
JO - Giordania	3
NI - Nicaragua	3
TW - Taiwan	3
BE - Belgio	2
CH - Svizzera	2
CL - Cile	2
GP - Guadalupe	2
JM - Giamaica	2
JP - Giappone	2
RS - Serbia	2
SV - El Salvador	2
TN - Tunisia	2
AE - Emirati Arabi Uniti	1
AT - Austria	1
AU - Australia	1
BA - Bosnia-Erzegovina	1
BB - Barbados	1
CO - Colombia	1
CR - Costa Rica	1
CW - ???statistics.table.value.countryCode.CW???	1
CZ - Repubblica Ceca	1
EE - Estonia	1
EG - Egitto	1
GT - Guatemala	1
IE - Irlanda	1
IL - Israele	1
KE - Kenya	1
KZ - Kazakistan	1
MN - Mongolia	1
PE - Perù	1
PH - Filippine	1
PR - Porto Rico	1
RE - Reunion	1
RO - Romania	1
SA - Arabia Saudita	1
SI - Slovenia	1
SY - Repubblica araba siriana	1
UY - Uruguay	1
VE - Venezuela	1
XK - ???statistics.table.value.countryCode.XK???	1
ZA - Sudafrica	1
Totale	2.695

Nome	#
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology	336
Extraction of the Defect Distributions in DRAM Capacitor Using I-V and C-V Sensitivity Maps	325
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs	290
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs	283
A new method for extracting interface state and border trap densities in high-k/III-V MOSFETs	282
Low leakage stoichiometric SrTiO3 dielectric for advanced metal-insulator-metal capacitors	254
Ultra-Low Power Displacement Sensor	251
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs	249
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology	238
Extraction of interface and border traps in beyond-Si devices by accounting for generation and recombination in the semiconductor	213
Totale	2.721

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	142	0	0	0	4	3	13	3	10	30	16	49	14
2022/2023	184	17	20	22	15	31	36	1	18	17	1	3	3
2023/2024	116	4	11	10	12	14	18	5	23	2	0	3	14
2024/2025	482	19	6	7	36	95	64	20	57	56	23	38	61
2025/2026	683	33	16	49	52	126	44	104	36	89	67	37	30
2026/2027	247	33	39	81	94	0	0	0	0	0	0	0	0
Totale													2.721