FANTINI, Fausto
 Distribuzione geografica
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Continente #
NA - Nord America 16.825
AS - Asia 7.569
EU - Europa 6.253
SA - Sud America 890
AF - Africa 90
OC - Oceania 9
Continente sconosciuto - Info sul continente non disponibili 7
Totale 31.643
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Nazione #
US - Stati Uniti d'America 16.571
GB - Regno Unito 2.461
CN - Cina 2.440
SG - Singapore 2.153
HK - Hong Kong 1.056
SE - Svezia 742
BR - Brasile 723
DE - Germania 689
VN - Vietnam 688
IT - Italia 573
UA - Ucraina 442
TR - Turchia 377
FR - Francia 322
FI - Finlandia 311
KR - Corea 293
RU - Federazione Russa 292
CA - Canada 189
BG - Bulgaria 164
IN - India 128
BD - Bangladesh 65
AR - Argentina 64
IQ - Iraq 51
IE - Irlanda 48
MX - Messico 40
NL - Olanda 38
PH - Filippine 33
BE - Belgio 31
JP - Giappone 31
PK - Pakistan 31
ZA - Sudafrica 30
ES - Italia 26
ID - Indonesia 25
EC - Ecuador 23
CO - Colombia 22
AE - Emirati Arabi Uniti 21
PL - Polonia 19
TW - Taiwan 18
VE - Venezuela 18
MY - Malesia 17
JO - Giordania 16
SA - Arabia Saudita 16
IL - Israele 15
CL - Cile 13
UZ - Uzbekistan 13
MA - Marocco 12
AT - Austria 11
KE - Kenya 11
NP - Nepal 11
TN - Tunisia 11
PE - Perù 10
TH - Thailandia 10
EG - Egitto 9
AZ - Azerbaigian 8
BH - Bahrain 8
LT - Lituania 8
RO - Romania 8
UY - Uruguay 8
DZ - Algeria 7
HU - Ungheria 7
IR - Iran 7
JM - Giamaica 6
SK - Slovacchia (Repubblica Slovacca) 6
AL - Albania 5
CH - Svizzera 5
CR - Costa Rica 5
DK - Danimarca 5
KZ - Kazakistan 5
NZ - Nuova Zelanda 5
PS - Palestinian Territory 5
AU - Australia 4
BA - Bosnia-Erzegovina 4
BO - Bolivia 4
EE - Estonia 4
EU - Europa 4
GT - Guatemala 4
PY - Paraguay 4
RS - Serbia 4
BY - Bielorussia 3
CY - Cipro 3
DO - Repubblica Dominicana 3
GR - Grecia 3
LB - Libano 3
OM - Oman 3
PT - Portogallo 3
SN - Senegal 3
BB - Barbados 2
CI - Costa d'Avorio 2
CZ - Repubblica Ceca 2
GE - Georgia 2
HR - Croazia 2
KG - Kirghizistan 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
LU - Lussemburgo 2
LV - Lettonia 2
ME - Montenegro 2
MN - Mongolia 2
NO - Norvegia 2
PR - Porto Rico 2
SI - Slovenia 2
Totale 31.617
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Città #
Fairfield 1.747
Santa Clara 1.616
Southend 1.614
Singapore 1.313
Woodbridge 1.295
Hefei 1.106
Ashburn 1.102
Chandler 1.080
Hong Kong 1.043
Houston 1.015
Jacksonville 963
Ann Arbor 701
Dearborn 674
Seattle 632
Wilmington 588
Cambridge 586
London 369
Nyköping 359
Beijing 320
San Jose 289
Seoul 280
Izmir 264
Des Moines 262
Ho Chi Minh City 203
Hanoi 185
Los Angeles 185
Modena 176
San Diego 172
The Dalles 171
Chicago 162
Princeton 161
Sofia 161
Eugene 156
Helsinki 148
Council Bluffs 136
Lauterbourg 132
Munich 117
Moscow 99
Montréal 92
Mcallen 91
New York 88
Buffalo 83
Kent 80
Shanghai 79
Milan 66
São Paulo 66
Grafing 56
Boardman 51
Salt Lake City 51
Dublin 48
Dallas 40
Toronto 40
Bremen 38
Redwood City 38
Guangzhou 33
Frankfurt am Main 32
Brussels 30
Elk Grove Village 30
Da Nang 29
Kunming 29
Rome 29
Haiphong 27
Tampa 27
Nanjing 26
Norwalk 26
Baghdad 23
Orem 23
Rio de Janeiro 23
Belo Horizonte 22
Columbus 21
Verona 21
Falkenstein 20
Padova 20
Philadelphia 20
Tokyo 19
Wuhan 19
Brantford 17
Ottawa 17
Shenyang 16
Atlanta 15
Auburn Hills 15
Brooklyn 15
Jinan 15
Mumbai 15
Pune 15
Washington 15
Dulles 14
Indiana 14
Johannesburg 14
Amman 13
Cagliari 13
Chennai 13
Phoenix 13
Saint Petersburg 13
Changsha 12
Nanchang 12
Wallingford 12
Can Tho 11
Jakarta 11
Miami 11
Totale 23.469
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Nome #
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's 657
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 328
Reliability in automotive electronics: a case study applied to diesel engine control 321
Appunti di Microelettronica 309
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 304
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 285
Failure Analysis-assisted FMEA 278
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 278
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs 275
Field plate related reliability improvements in GaN-on-Si HEMTs 273
Investigation of the hot-carrier degradation in Si/SiGe HBT's by intrinsic low frequency noise source modeling 271
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 270
Study of GaN HEMTs electrical degradation by means of numerical simulations 269
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 268
A percolative simulation of electromigration phenomena 263
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 263
A comparison between normally and highly accelerated electromigration tests 261
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 260
Anodic Gold corrosion in plastic encapsulated devices 256
A Foveated Retina-Like Sensor Using CCD Technology 256
A Single-Chip 5GHz WLAN Transmitter in 0.35um Si/SiGe BiCMOS Technology 256
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 254
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 253
Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices 249
Failure mechanisms in compound semiconductor electron devices 246
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's 245
Degradation based long-term reliability assessment for electronic components in submarine applications 245
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 244
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors 243
A Retinal CCD Sensor for Fast 2D Shape Recognition and Tracking 243
Reliability physics of compound semiconductor transistors for microwave applications 243
Metal-GaAs interaction and contact degradation in microwave MESFETs 242
Reliability evaluation of plastic packaged devices for long life applications by THB test 241
A stochastic approach to failure analysis in electromigration phenomena 239
Correlation between light emission and currents in pseudomorphic HEMTs 237
Thermal characterisation of IGBT power modules 237
Reliability predictions in electronic industrial applications 236
Activation energy in the early stage of electromigration in Al-1%Si/TiN/Ti bamboo lines 235
Interdiffusion and compound formation in the c-Si/PtSi/(Ti-W)/Al system 234
A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines 234
Observation of latch-up phenomena in CMOS IC's by means of Digital Differential Voltage Contrast 231
Electromigration testing of integrated circuit interconnections 231
Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors 231
A percolative approach to electromigration in metallic lines 231
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 231
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 229
Failure analysis of RuO2 thick film chip resistors 229
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation 228
Design of field-plated InP-based HEMTs 227
Design and screening of highly reliable 980nm pump lasers 226
Increase in barrier height of Al/n-GaAs contacts induced by high current 222
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's 221
Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs 220
EPROM testing - part II: application to 16K N-channel devices 219
Degradation mechanisms induced by high current density in Al-gate GaAs MESFETs 219
Sulfur-contamination of high power white LED 219
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's 217
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs 217
Reliability investigation of InGaP/GaAs HBTs under current and temperature stress 216
On the use of matrix algebra for the description of EPROM failures 216
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al(0.25)Ga(0.75)As Schottky barriers 216
On the ASTM electromigration test structure applied to Al-1%Si/TiN/Ti bamboo metal lines 215
Reliability of GaAs MESFETs 215
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 212
Investigation of information loss mechanisms in EPROMs 211
Design of RFIC's in 0.35um Si/SiGe BiCMOS Technology for a 5GHz Domotic Transmitter 211
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 211
Enhancement and Degradation of Drain Current in Pseudomorphic AlGaAs/InGaAs HEMT's Induced by Hot-Electrons. 210
Electromigration in thin-film interconnection lines: models, methods and results 209
VLSI Reliability: Contributions from a Three Year National Research Program 208
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's 208
Are high resolution resistometric methods really useful for early detection of electromigration damage? 208
Evaluation of current density distribution in MESFET gates 207
Electromigration in Thin-Films for Microelectronics 207
A study of hot electron degradation effects in pseudomorphic HEMTs 206
Study of high-field degradation phenomena in GaN-capped AlGaN/GaN HEMTs 205
Electromigration effects in power MESFET rectifying and ohmic contacts 204
On the effect of power cycling stress on IGBT modules 204
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS 203
Breakdown walkout in pseudomorphic HEMT's 202
A SEM based system for a complete characterisation of latch-up in CMOS integrated circuits 202
Very high temperature test of InP-based Laser Diodes 200
Failure modes induced in TTL-LS bipolar logics by negative inputs 200
Affidabilità e fisica dei guasti nei circuiti integrati in silicio 198
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation 198
Reliability problems in TTL-LS devices 198
Bipolar Schottky logic device failure modes due to contact metallurgical degradation 197
Low Noise, Low Interference Automated Bias Networks for Low Frequency Noise Characterization Set-Up's 196
Analysis of hot electron degradation in pseudomorphic HEMTs by DCTS and LF noise characterisation 196
Power GaAs MESFET: reliability aspects and failure mechanisms 196
Effects of Surface and Buffer Traps in Passivated AlGaN-GaN HEMT 196
Negative Vbe shift due to base dopant outdiffusion in DHBT 194
Effects of surface and buffer traps in passivated AlGaN/GaN HEMTs 194
The low frequency noise in electron devices: an engineering sight 192
The thermally balanced bridge technique (TBBT): a new high resolution resistometric measurement technique for the study of electromigration-induced early resistance changes in metal stripes 192
Reliability of compound semiconductor devices 191
On the validity of resistometric technique in electromigration studies of narrow stripes 191
Electrical degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts induced by thermal treatments 191
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's 191
Degradation mechanisms induced by temperature in power MESFETs 189
Totale 23.355
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Categoria #
all - tutte 113.599
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 113.599
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021675 0 0 0 0 0 0 0 0 0 395 133 147
2021/20222.779 37 401 370 164 74 125 215 130 242 284 413 324
2022/20232.681 321 270 172 222 270 615 43 293 313 18 88 56
2023/20241.309 53 89 119 158 357 83 55 220 44 24 1 106
2024/20255.617 258 44 44 309 1.140 686 368 355 624 136 679 974
2025/20266.989 533 648 870 825 726 840 795 420 766 566 0 0
Totale 31.747