FANTINI, Fausto
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 17.464
AS - Asia 7.625
EU - Europa 6.416
SA - Sud America 891
AF - Africa 90
OC - Oceania 9
Continente sconosciuto - Info sul continente non disponibili 7
Totale 32.502
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 17.200
GB - Regno Unito 2.461
CN - Cina 2.453
SG - Singapore 2.171
HK - Hong Kong 1.062
SE - Svezia 744
IT - Italia 732
BR - Brasile 723
DE - Germania 690
VN - Vietnam 688
UA - Ucraina 442
TR - Turchia 377
FR - Francia 322
FI - Finlandia 311
KR - Corea 293
RU - Federazione Russa 292
CA - Canada 194
BG - Bulgaria 165
IN - India 128
BD - Bangladesh 84
AR - Argentina 64
IQ - Iraq 51
IE - Irlanda 48
MX - Messico 41
NL - Olanda 38
PH - Filippine 33
BE - Belgio 31
JP - Giappone 31
PK - Pakistan 31
ZA - Sudafrica 30
ES - Italia 26
ID - Indonesia 25
CO - Colombia 23
EC - Ecuador 23
AE - Emirati Arabi Uniti 21
PL - Polonia 19
TW - Taiwan 18
VE - Venezuela 18
MY - Malesia 17
JO - Giordania 16
SA - Arabia Saudita 16
IL - Israele 15
CL - Cile 13
UZ - Uzbekistan 13
MA - Marocco 12
AT - Austria 11
KE - Kenya 11
NP - Nepal 11
TN - Tunisia 11
PE - Perù 10
TH - Thailandia 10
EG - Egitto 9
AZ - Azerbaigian 8
BH - Bahrain 8
LT - Lituania 8
RO - Romania 8
UY - Uruguay 8
DZ - Algeria 7
HU - Ungheria 7
IR - Iran 7
JM - Giamaica 6
SK - Slovacchia (Repubblica Slovacca) 6
AL - Albania 5
CH - Svizzera 5
CR - Costa Rica 5
DK - Danimarca 5
GT - Guatemala 5
KZ - Kazakistan 5
NZ - Nuova Zelanda 5
PS - Palestinian Territory 5
AU - Australia 4
BA - Bosnia-Erzegovina 4
BO - Bolivia 4
EE - Estonia 4
EU - Europa 4
PY - Paraguay 4
RS - Serbia 4
BB - Barbados 3
BY - Bielorussia 3
CY - Cipro 3
DO - Repubblica Dominicana 3
GR - Grecia 3
LB - Libano 3
OM - Oman 3
PR - Porto Rico 3
PT - Portogallo 3
SN - Senegal 3
CI - Costa d'Avorio 2
CZ - Repubblica Ceca 2
GE - Georgia 2
HR - Croazia 2
KG - Kirghizistan 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
LU - Lussemburgo 2
LV - Lettonia 2
ME - Montenegro 2
MN - Mongolia 2
NO - Norvegia 2
SI - Slovenia 2
Totale 32.475
Salva come PNG Salva come JPEG
Città #
Fairfield 1.747
Santa Clara 1.619
Southend 1.614
Singapore 1.323
Woodbridge 1.295
Ashburn 1.274
Hefei 1.106
Chandler 1.080
Hong Kong 1.048
Houston 1.018
Jacksonville 964
Ann Arbor 701
Dearborn 674
Seattle 634
Wilmington 588
Cambridge 586
San Jose 514
London 369
Nyköping 359
Beijing 322
Seoul 280
Izmir 264
Des Moines 262
Council Bluffs 213
Ho Chi Minh City 203
Los Angeles 191
Hanoi 185
Modena 176
San Diego 172
The Dalles 171
Chicago 164
Princeton 161
Sofia 161
Eugene 156
Helsinki 148
Milan 135
Lauterbourg 132
Munich 117
Moscow 99
New York 97
Montréal 92
Mcallen 91
Buffalo 86
Kent 80
Shanghai 80
São Paulo 66
Grafing 56
Boardman 51
Dallas 51
Salt Lake City 51
Dublin 48
Toronto 41
Bremen 38
Redwood City 38
Frankfurt am Main 33
Guangzhou 33
Miano 33
Brussels 30
Elk Grove Village 30
Rome 30
Da Nang 29
Kunming 29
Tampa 28
Haiphong 27
Nanjing 26
Norwalk 26
Orem 25
Baghdad 23
Rio de Janeiro 23
Belo Horizonte 22
Columbus 22
Atlanta 21
Verona 21
Falkenstein 20
Padova 20
Philadelphia 20
Tokyo 19
Wuhan 19
Brantford 17
Ottawa 17
Phoenix 16
Shenyang 16
Auburn Hills 15
Brooklyn 15
Jinan 15
Mumbai 15
Pune 15
Washington 15
Dulles 14
Indiana 14
Johannesburg 14
Amman 13
Cagliari 13
Chennai 13
Miami 13
Saint Petersburg 13
San Francisco 13
Changsha 12
Nanchang 12
Wallingford 12
Totale 24.112
Salva come PNG Salva come JPEG
Nome #
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's 669
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 351
Reliability in automotive electronics: a case study applied to diesel engine control 333
Appunti di Microelettronica 316
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 310
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 304
Failure Analysis-assisted FMEA 287
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 287
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs 282
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 279
Investigation of the hot-carrier degradation in Si/SiGe HBT's by intrinsic low frequency noise source modeling 278
Field plate related reliability improvements in GaN-on-Si HEMTs 277
Study of GaN HEMTs electrical degradation by means of numerical simulations 274
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 271
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 269
A percolative simulation of electromigration phenomena 268
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 268
A comparison between normally and highly accelerated electromigration tests 265
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 264
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 263
Anodic Gold corrosion in plastic encapsulated devices 261
A Foveated Retina-Like Sensor Using CCD Technology 261
A Single-Chip 5GHz WLAN Transmitter in 0.35um Si/SiGe BiCMOS Technology 261
Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices 254
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's 252
Reliability physics of compound semiconductor transistors for microwave applications 252
A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines 251
Failure mechanisms in compound semiconductor electron devices 250
Degradation based long-term reliability assessment for electronic components in submarine applications 250
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors 247
Activation energy in the early stage of electromigration in Al-1%Si/TiN/Ti bamboo lines 247
Reliability evaluation of plastic packaged devices for long life applications by THB test 247
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 247
A Retinal CCD Sensor for Fast 2D Shape Recognition and Tracking 246
Metal-GaAs interaction and contact degradation in microwave MESFETs 245
A stochastic approach to failure analysis in electromigration phenomena 244
Design and screening of highly reliable 980nm pump lasers 243
Thermal characterisation of IGBT power modules 242
Correlation between light emission and currents in pseudomorphic HEMTs 241
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 241
Reliability predictions in electronic industrial applications 240
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 240
A percolative approach to electromigration in metallic lines 240
Interdiffusion and compound formation in the c-Si/PtSi/(Ti-W)/Al system 238
Observation of latch-up phenomena in CMOS IC's by means of Digital Differential Voltage Contrast 237
Electromigration testing of integrated circuit interconnections 235
Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors 235
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation 235
Failure analysis of RuO2 thick film chip resistors 234
Degradation mechanisms induced by high current density in Al-gate GaAs MESFETs 233
Design of field-plated InP-based HEMTs 231
Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs 227
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's 227
Increase in barrier height of Al/n-GaAs contacts induced by high current 226
Sulfur-contamination of high power white LED 226
On the use of matrix algebra for the description of EPROM failures 224
EPROM testing - part II: application to 16K N-channel devices 223
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's 223
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's 222
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs 222
Reliability investigation of InGaP/GaAs HBTs under current and temperature stress 221
Reliability of GaAs MESFETs 221
On the ASTM electromigration test structure applied to Al-1%Si/TiN/Ti bamboo metal lines 219
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al(0.25)Ga(0.75)As Schottky barriers 219
Design of RFIC's in 0.35um Si/SiGe BiCMOS Technology for a 5GHz Domotic Transmitter 219
Investigation of information loss mechanisms in EPROMs 217
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 216
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 216
Breakdown walkout in pseudomorphic HEMT's 215
Electromigration in thin-film interconnection lines: models, methods and results 214
Evaluation of current density distribution in MESFET gates 213
Enhancement and Degradation of Drain Current in Pseudomorphic AlGaAs/InGaAs HEMT's Induced by Hot-Electrons. 213
Are high resolution resistometric methods really useful for early detection of electromigration damage? 212
VLSI Reliability: Contributions from a Three Year National Research Program 211
Study of high-field degradation phenomena in GaN-capped AlGaN/GaN HEMTs 211
Electromigration effects in power MESFET rectifying and ohmic contacts 210
Electromigration in Thin-Films for Microelectronics 210
A study of hot electron degradation effects in pseudomorphic HEMTs 210
On the effect of power cycling stress on IGBT modules 209
A SEM based system for a complete characterisation of latch-up in CMOS integrated circuits 207
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation 207
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS 207
Failure modes induced in TTL-LS bipolar logics by negative inputs 206
Reliability problems in TTL-LS devices 204
Analysis of hot electron degradation in pseudomorphic HEMTs by DCTS and LF noise characterisation 203
Very high temperature test of InP-based Laser Diodes 203
Affidabilità e fisica dei guasti nei circuiti integrati in silicio 203
Power GaAs MESFET: reliability aspects and failure mechanisms 202
Low Noise, Low Interference Automated Bias Networks for Low Frequency Noise Characterization Set-Up's 201
Effects of Surface and Buffer Traps in Passivated AlGaN-GaN HEMT 201
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. 201
Bipolar Schottky logic device failure modes due to contact metallurgical degradation 201
Negative Vbe shift due to base dopant outdiffusion in DHBT 199
Effects of surface and buffer traps in passivated AlGaN/GaN HEMTs 197
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's 197
The thermally balanced bridge technique (TBBT): a new high resolution resistometric measurement technique for the study of electromigration-induced early resistance changes in metal stripes 196
The low frequency noise in electron devices: an engineering sight 195
Improvement of breakdown and DC-to-pulse dispersion properties in field-plated InGaAs-InAlAs pHEMTs 195
Reliability of compound semiconductor devices 194
On the validity of resistometric technique in electromigration studies of narrow stripes 194
Totale 24.004
Salva come PNG Salva come JPEG
Categoria #
all - tutte 119.165
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 119.165
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021147 0 0 0 0 0 0 0 0 0 0 0 147
2021/20222.779 37 401 370 164 74 125 215 130 242 284 413 324
2022/20232.681 321 270 172 222 270 615 43 293 313 18 88 56
2023/20241.309 53 89 119 158 357 83 55 220 44 24 1 106
2024/20255.617 258 44 44 309 1.140 686 368 355 624 136 679 974
2025/20267.848 533 648 870 825 726 840 795 420 766 826 401 198
Totale 32.606