FANTINI, Fausto
 Distribuzione geografica
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Continente #
NA - Nord America 19.096
AS - Asia 7.730
EU - Europa 6.520
SA - Sud America 913
Continente sconosciuto - Info sul continente non disponibili 111
AF - Africa 92
OC - Oceania 9
Totale 34.471
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Nazione #
US - Stati Uniti d'America 18.741
GB - Regno Unito 2.469
CN - Cina 2.461
SG - Singapore 2.190
HK - Hong Kong 1.073
IT - Italia 813
SE - Svezia 744
BR - Brasile 732
DE - Germania 692
VN - Vietnam 690
UA - Ucraina 444
TR - Turchia 377
FR - Francia 323
FI - Finlandia 311
KR - Corea 305
RU - Federazione Russa 292
CA - Canada 233
BG - Bulgaria 165
IN - India 131
BD - Bangladesh 125
AR - Argentina 67
IQ - Iraq 51
IE - Irlanda 48
MX - Messico 47
NL - Olanda 38
JP - Giappone 34
PH - Filippine 33
BE - Belgio 32
PK - Pakistan 32
ES - Italia 30
ZA - Sudafrica 30
CO - Colombia 28
ID - Indonesia 26
EC - Ecuador 24
AE - Emirati Arabi Uniti 21
CR - Costa Rica 21
PL - Polonia 20
VE - Venezuela 20
MY - Malesia 18
TW - Taiwan 18
JO - Giordania 17
SA - Arabia Saudita 16
IL - Israele 15
CL - Cile 14
MA - Marocco 14
UZ - Uzbekistan 13
TH - Thailandia 12
AT - Austria 11
JM - Giamaica 11
KE - Kenya 11
NP - Nepal 11
TN - Tunisia 11
PE - Perù 10
EG - Egitto 9
HN - Honduras 9
AZ - Azerbaigian 8
BH - Bahrain 8
GT - Guatemala 8
LT - Lituania 8
RO - Romania 8
UY - Uruguay 8
DZ - Algeria 7
HU - Ungheria 7
IR - Iran 7
AL - Albania 6
SK - Slovacchia (Repubblica Slovacca) 6
BA - Bosnia-Erzegovina 5
CH - Svizzera 5
DK - Danimarca 5
KZ - Kazakistan 5
NZ - Nuova Zelanda 5
PS - Palestinian Territory 5
PY - Paraguay 5
AU - Australia 4
BO - Bolivia 4
EE - Estonia 4
EU - Europa 4
GR - Grecia 4
NI - Nicaragua 4
PR - Porto Rico 4
PT - Portogallo 4
RS - Serbia 4
BB - Barbados 3
BY - Bielorussia 3
CY - Cipro 3
DO - Repubblica Dominicana 3
LB - Libano 3
OM - Oman 3
SN - Senegal 3
SV - El Salvador 3
CI - Costa d'Avorio 2
CZ - Repubblica Ceca 2
GE - Georgia 2
HR - Croazia 2
KG - Kirghizistan 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
LU - Lussemburgo 2
LV - Lettonia 2
ME - Montenegro 2
Totale 34.329
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Città #
Ashburn 1.804
Fairfield 1.747
Santa Clara 1.669
Southend 1.614
Singapore 1.335
Woodbridge 1.295
Hefei 1.106
Chandler 1.080
Hong Kong 1.058
Houston 1.023
Jacksonville 965
Ann Arbor 701
San Jose 681
Dearborn 674
Seattle 637
Wilmington 594
Cambridge 586
Council Bluffs 405
London 371
Nyköping 359
Beijing 325
Seoul 280
Izmir 264
Des Moines 263
Los Angeles 222
Ho Chi Minh City 205
Hanoi 185
Modena 181
Chicago 175
San Diego 172
The Dalles 171
Princeton 164
Sofia 161
Eugene 156
Milan 155
Helsinki 148
Lauterbourg 132
Munich 117
New York 115
Buffalo 103
Moscow 99
Montréal 92
Mcallen 91
Kent 80
Shanghai 80
Dallas 79
São Paulo 68
Grafing 56
Boardman 53
Salt Lake City 52
Dublin 48
Toronto 46
Bremen 38
Redwood City 38
Rome 38
Columbus 34
Frankfurt am Main 33
Guangzhou 33
Miano 33
Brussels 31
Elk Grove Village 30
Da Nang 29
Kunming 29
Tampa 29
Haiphong 27
Norwalk 27
Nanjing 26
Philadelphia 26
Atlanta 25
Orem 25
Rio de Janeiro 24
Baghdad 23
Belo Horizonte 23
Brooklyn 23
Phoenix 23
Verona 22
Falkenstein 20
Padova 20
Tokyo 20
Washington 20
Wuhan 19
Miami 18
Ottawa 18
Brantford 17
Mumbai 16
Shenyang 16
Auburn Hills 15
Jinan 15
Pune 15
Cagliari 14
Charlotte 14
Chennai 14
Dulles 14
Indiana 14
Johannesburg 14
Mexico City 14
San Francisco 14
Amman 13
Denver 13
Las Vegas 13
Totale 25.311
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Nome #
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's 679
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 358
Reliability in automotive electronics: a case study applied to diesel engine control 357
Appunti di Microelettronica 333
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 324
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 319
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs 306
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 299
Failure Analysis-assisted FMEA 295
Investigation of the hot-carrier degradation in Si/SiGe HBT's by intrinsic low frequency noise source modeling 294
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 293
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 291
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 290
Field plate related reliability improvements in GaN-on-Si HEMTs 286
A comparison between normally and highly accelerated electromigration tests 284
Anodic Gold corrosion in plastic encapsulated devices 282
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 281
A Foveated Retina-Like Sensor Using CCD Technology 280
Study of GaN HEMTs electrical degradation by means of numerical simulations 279
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 279
A percolative simulation of electromigration phenomena 275
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 274
A Single-Chip 5GHz WLAN Transmitter in 0.35um Si/SiGe BiCMOS Technology 268
A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines 268
Reliability physics of compound semiconductor transistors for microwave applications 266
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's 263
Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs 261
Failure mechanisms in compound semiconductor electron devices 260
Activation energy in the early stage of electromigration in Al-1%Si/TiN/Ti bamboo lines 260
Electromigration testing of integrated circuit interconnections 260
Correlation between light emission and currents in pseudomorphic HEMTs 258
Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices 258
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors 255
Metal-GaAs interaction and contact degradation in microwave MESFETs 255
Degradation based long-term reliability assessment for electronic components in submarine applications 255
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 255
A percolative approach to electromigration in metallic lines 254
A stochastic approach to failure analysis in electromigration phenomena 253
Interdiffusion and compound formation in the c-Si/PtSi/(Ti-W)/Al system 253
Design and screening of highly reliable 980nm pump lasers 252
A Retinal CCD Sensor for Fast 2D Shape Recognition and Tracking 252
Reliability evaluation of plastic packaged devices for long life applications by THB test 252
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 252
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 252
Thermal characterisation of IGBT power modules 251
Reliability predictions in electronic industrial applications 250
Failure analysis of RuO2 thick film chip resistors 250
Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors 249
Observation of latch-up phenomena in CMOS IC's by means of Digital Differential Voltage Contrast 248
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation 246
Degradation mechanisms induced by high current density in Al-gate GaAs MESFETs 245
A SEM based system for a complete characterisation of latch-up in CMOS integrated circuits 242
EPROM testing - part II: application to 16K N-channel devices 240
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's 239
Design of field-plated InP-based HEMTs 237
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's 237
On the use of matrix algebra for the description of EPROM failures 236
Investigation of information loss mechanisms in EPROMs 236
Study of high-field degradation phenomena in GaN-capped AlGaN/GaN HEMTs 236
Reliability investigation of InGaP/GaAs HBTs under current and temperature stress 235
Reliability of GaAs MESFETs 235
Enhancement and Degradation of Drain Current in Pseudomorphic AlGaAs/InGaAs HEMT's Induced by Hot-Electrons. 234
Increase in barrier height of Al/n-GaAs contacts induced by high current 233
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's 233
Electromigration in thin-film interconnection lines: models, methods and results 233
Sulfur-contamination of high power white LED 232
Design of RFIC's in 0.35um Si/SiGe BiCMOS Technology for a 5GHz Domotic Transmitter 231
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs 231
Breakdown walkout in pseudomorphic HEMT's 228
VLSI Reliability: Contributions from a Three Year National Research Program 228
Evaluation of current density distribution in MESFET gates 228
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al(0.25)Ga(0.75)As Schottky barriers 228
Affidabilità e fisica dei guasti nei circuiti integrati in silicio 226
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation 226
On the ASTM electromigration test structure applied to Al-1%Si/TiN/Ti bamboo metal lines 225
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 225
Analysis of hot electron degradation in pseudomorphic HEMTs by DCTS and LF noise characterisation 224
On the effect of power cycling stress on IGBT modules 223
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 223
Electromigration effects in power MESFET rectifying and ohmic contacts 221
Are high resolution resistometric methods really useful for early detection of electromigration damage? 220
Electromigration in Thin-Films for Microelectronics 219
A study of hot electron degradation effects in pseudomorphic HEMTs 219
Failure modes induced in TTL-LS bipolar logics by negative inputs 218
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS 218
Bipolar Schottky logic device failure modes due to contact metallurgical degradation 217
Power GaAs MESFET: reliability aspects and failure mechanisms 215
Reliability problems in TTL-LS devices 214
Very high temperature test of InP-based Laser Diodes 213
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. 212
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's 211
The thermally balanced bridge technique (TBBT): a new high resolution resistometric measurement technique for the study of electromigration-induced early resistance changes in metal stripes 207
Effects of Surface and Buffer Traps in Passivated AlGaN-GaN HEMT 207
The low frequency noise in electron devices: an engineering sight 206
Negative Vbe shift due to base dopant outdiffusion in DHBT 206
Low Noise, Low Interference Automated Bias Networks for Low Frequency Noise Characterization Set-Up's 205
Electrical degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts induced by thermal treatments 203
Improvement of breakdown and DC-to-pulse dispersion properties in field-plated InGaAs-InAlAs pHEMTs 202
Effects of surface and buffer traps in passivated AlGaN/GaN HEMTs 202
Degradation mechanisms induced by temperature in power MESFETs 200
Totale 25.278
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Categoria #
all - tutte 128.133
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 128.133
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.341 0 0 370 164 74 125 215 130 242 284 413 324
2022/20232.681 321 270 172 222 270 615 43 293 313 18 88 56
2023/20241.309 53 89 119 158 357 83 55 220 44 24 1 106
2024/20255.617 258 44 44 309 1.140 686 368 355 624 136 679 974
2025/20267.973 533 648 870 825 726 840 795 420 766 826 401 323
2026/20271.740 379 509 852 0 0 0 0 0 0 0 0 0
Totale 34.471