FRABBONI, Stefano
 Distribuzione geografica
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Continente #
NA - Nord America 22.283
AS - Asia 10.320
EU - Europa 9.040
SA - Sud America 1.330
AF - Africa 173
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 13
Totale 43.178
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Nazione #
US - Stati Uniti d'America 22.004
GB - Regno Unito 3.826
SG - Singapore 3.398
CN - Cina 3.073
HK - Hong Kong 1.300
IT - Italia 1.058
BR - Brasile 1.057
DE - Germania 1.053
VN - Vietnam 1.041
SE - Svezia 845
UA - Ucraina 444
FI - Finlandia 419
RU - Federazione Russa 408
FR - Francia 392
KR - Corea 339
TR - Turchia 322
BG - Bulgaria 168
IN - India 163
CA - Canada 158
BD - Bangladesh 115
AR - Argentina 94
ID - Indonesia 78
JP - Giappone 77
NL - Olanda 69
MX - Messico 63
IQ - Iraq 62
PK - Pakistan 57
ZA - Sudafrica 57
IE - Irlanda 53
AE - Emirati Arabi Uniti 49
CO - Colombia 41
EC - Ecuador 39
AT - Austria 36
PL - Polonia 34
LT - Lituania 33
BE - Belgio 31
ES - Italia 31
MY - Malesia 28
CL - Cile 26
MA - Marocco 26
UZ - Uzbekistan 24
CH - Svizzera 22
PH - Filippine 22
RO - Romania 21
TW - Taiwan 20
DO - Repubblica Dominicana 19
VE - Venezuela 19
SA - Arabia Saudita 18
CZ - Repubblica Ceca 17
PY - Paraguay 17
TN - Tunisia 16
EG - Egitto 15
EU - Europa 15
DZ - Algeria 14
JO - Giordania 14
KE - Kenya 14
PE - Perù 14
NP - Nepal 13
UY - Uruguay 13
AU - Australia 12
IL - Israele 11
LB - Libano 11
AZ - Azerbaigian 10
BO - Bolivia 10
ET - Etiopia 9
GR - Grecia 9
JM - Giamaica 9
KZ - Kazakistan 9
BY - Bielorussia 8
OM - Oman 8
RS - Serbia 8
AL - Albania 7
DK - Danimarca 7
TH - Thailandia 7
BH - Bahrain 6
CR - Costa Rica 6
IR - Iran 6
MD - Moldavia 6
PA - Panama 6
GE - Georgia 5
HN - Honduras 5
LV - Lettonia 5
PS - Palestinian Territory 5
PT - Portogallo 5
HU - Ungheria 4
KH - Cambogia 4
LK - Sri Lanka 4
LU - Lussemburgo 4
AO - Angola 3
CG - Congo 3
CY - Cipro 3
EE - Estonia 3
NG - Nigeria 3
QA - Qatar 3
SN - Senegal 3
SY - Repubblica araba siriana 3
AM - Armenia 2
BA - Bosnia-Erzegovina 2
BS - Bahamas 2
KG - Kirghizistan 2
Totale 43.132
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Città #
Southend 2.975
Fairfield 2.615
Singapore 2.209
Ashburn 1.984
Santa Clara 1.950
Woodbridge 1.592
Houston 1.353
Hong Kong 1.284
Hefei 1.191
Chandler 1.098
Seattle 1.038
Jacksonville 949
Cambridge 900
Wilmington 868
Ann Arbor 821
San Jose 697
Dearborn 622
Nyköping 496
London 452
Beijing 446
Seoul 327
Ho Chi Minh City 323
Los Angeles 316
The Dalles 310
Hanoi 253
Helsinki 252
Council Bluffs 233
Modena 233
San Diego 228
Chicago 202
Buffalo 198
Princeton 188
Izmir 166
Sofia 166
Des Moines 160
Grafing 157
Eugene 152
Lauterbourg 143
Munich 135
Milan 104
Moscow 104
New York 95
Redwood City 91
São Paulo 90
Shanghai 87
Salt Lake City 86
Bremen 81
Columbus 79
Guangzhou 61
Montréal 61
Dallas 53
Da Nang 50
Dublin 49
Tokyo 48
Jakarta 46
Haiphong 45
Philadelphia 44
Frankfurt am Main 43
Orem 43
Mcallen 40
Rio de Janeiro 39
Washington 38
Bologna 37
Kent 36
Tampa 34
Atlanta 33
Falls Church 33
Kunming 31
Belo Horizonte 30
Chennai 30
Rome 30
Brooklyn 28
Denver 28
Dhaka 27
Elk Grove Village 27
Nanjing 27
Phoenix 27
Norwalk 25
San Francisco 25
Warsaw 25
Amsterdam 24
Brussels 24
Baghdad 23
Brasília 23
Toronto 23
Brantford 22
Johannesburg 22
Redondo Beach 22
San Mateo 22
Kilburn 21
Quito 21
Tashkent 20
Boardman 18
Hangzhou 18
Montreal 18
Turku 18
Changsha 17
Charlotte 17
Miami 17
Curitiba 16
Totale 32.098
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Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 446
Il microscopio ottico a proiezione come modello per introdurre la microscopia elettronica in trasmissione 413
Highly efficient electron vortex beams generated by nanofabricated phase holograms 394
Assembly and structure of Ni/NiO core–shell nanoparticles 386
Characterization of a new cobalt precursor for focused beam deposition of magnetic nanostructures 377
Thermal desorption spectra from cavities in helium-implanted silicon 369
Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon 369
Vacancy-gettering in silicon: Cavities and helium-implantation 363
Structure and stability of nickel/nickel oxide core-shell nanoparticles 359
Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si 357
Assembly and Fine Analysis of Ni/MgO Core/Shell Nanoparticles 354
Helium-implanted silicon: A study of bubble precursors 348
Generation of Nondiffracting Electron Bessel Beams 344
Holographic generation of highly twisted electron beams 344
Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys 339
Single-metalloprotein wet biotransistor 339
The Young-Feynman two-slits experiment with single electrons: Build-up of the interference pattern and arrival-time distribution using a fast-readout pixel detector 337
Observation of nanoscale magnetic fields using twisted electron beams 334
Focused Electron Beam Deposition of Nanowires from Cobalt Tricarbonyl Nitrosyl (Co(CO)(3)NO) Precursor 333
Application of a HEPE-oriented 4096-MAPS to time analysis of single electron distribution in a two-slits interference experiment 330
A 4096-pixel MAPS detector used to investigate the single-electron distribution in a Young–Feynman two-slit interference experiment 326
Experimental realization of the Ehrenberg-Siday thought experiment 321
Transmission electron microscopy study of helium implanted silicon 317
Hydrogen and helium bubbles in silicon 314
Build-up of interference patterns with single electrons 314
Elastic and inelastic electrons in the double-slit experiment: A variant of Feynman's which-way set-up 312
Measuring the orbital angular momentum spectrum of an electron beam 310
ANALYTICAL ELECTRON-MICROSCOPY OF SI1-XGEX/SI HETEROSTRUCTURES AND LOCAL ISOLATION STRUCTURES 308
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 307
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 305
Controlled growth of Ni/NiO core–shell nanoparticles: Structure, morphology and tuning of magnetic properties 305
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 304
Realization of electron vortices with large orbital angular momentum using miniature holograms fabricated by electron beam lithography 300
Morphological and mechanical characterization of composite calcite/SWCNT–COOH single crystals 299
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 295
Combination of Electron Energy-loss Spectroscopy and Orbital Angular Momentum Spectroscopy. Applications to Electron Magnetic Chiral Dichroism, Plasmon-loss, and Core-loss 294
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 291
Generation and application of bessel beams in electron microscopy 287
Structural transitions in electron beam deposited Co-carbonyl suspended nanowires at high electrical current densities 286
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 286
Suspended nanostructures grown by electron beam-induced deposition of Pt and TEOS precursors 285
Experiments and Potentialities for the use of Bessel Beam in Superresolution STEM 285
Hydrogen precipitation in highly oversaturated single-crystalline silicon 285
Electrical characterization of suspended Pt nanowires grown by EBID with water vapour assistance 284
High-dose helium-implanted single-crystal silicon: Annealing behavior 283
Comparison of Cliff-Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxycarbides Thin Films 283
Determination of bulk mismatch values in transmission electron microscopy cross-sections of heterostructures by convergent-beam electron diffraction 277
HRTEM and HAADF analysis of Ni Multi-Twinned Nanoparticles 273
Processing high-quality silicon for microstrip detectors 273
Structured quantum waves 273
Transmission Electron Microscopy study of Helium Implanted Silicon 270
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 270
Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1−xNx intercalated GaAs/GaAs1−xNx:H heterostructures 270
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 269
Fabrication of FeSi and Fe3Si compounds by electron beam induced mixing of [Fe/Si]2 and [Fe3/Si]2 multilayers grown by focused electron beam induced deposition 269
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 269
Bulk mismatch values of heterostructures as determined from convergent beam electron diffraction on thin cross sections 268
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 268
Structural properties of reactively sputtered W-Si-N thin films 267
Alloy multilayers and ternary nanostructures by direct-write approach 263
Phase retrieval of an electron vortex beam using diffraction holography 263
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 262
Innovative Phase Plates for Beam Shaping 262
Magnetic characterization of cobalt nanowires and square nanorings fabricated by focused electron beam induced deposition 262
Power Factor Enhancement by Inhomogeneous Distribution of Dopants in Two-Phase Nanocrystalline Systems 262
Orbital Angular Momentum and Energy Loss Characterization of Plasmonic Excitations in Metallic Nanostructures in TEM 260
Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices 259
Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high-order Laue zone line profiles 258
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 258
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 257
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 255
Two and three slit electron interference and diffraction experiments 254
Strain field reconstruction in shallow trench isolation structures by CBED and LACBED 254
Using evidence from nanocavities to assess the vibrational properties of external surfaces 252
Electron-Beam Shaping in the Transmission Electron Microscope: Control of Electron-Beam Propagation Along Atomic Columns 251
Controlled co-deposition of FePt nanoparticles embedded in MgO: a detailed investigation of structure and electronic and magnetic properties 249
Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM 248
A novel Monte-Carlo based method for quantitative thin film X-ray microanalysis 247
Effects of thermal annealing on the structural properties of sputtered W-Si-N diffusion barriers 247
Four slits interference and diffraction experiments 246
The effect of biaxial stress on the solid phase epitaxial crystallization of GexSi((1-x)) films 246
Strain characterisation at the nm scale of deep sub-micron devices by convergent-beam electron diffraction 244
Hydrogen injection and retention in nanocavities of single-crystalline silicon 243
Fabrication by electron beam induced deposition and transmission electron microscopic characterization of sub-10-nm freestanding Pt nanowires 243
Low temperature dopant activation of BF2 implanted silicon 242
Young's double-slit interference experiment with electrons 238
Electron diffraction with ten nanometer beam size for strain analysis of nanodevices 237
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 237
The Young-Feynman controlled double-slit electron interference experiment 237
Structural evolution and graphitization of metallorganic-Pt suspended nanowires under high-current-density electrical test 236
Investigation of strain distribution in LOCOS structures by dynamical simulation of LACBED patterns 236
Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures 235
Transmission Electron Microscopy characterization and sculpting of sub-1 nm Si-O-C freestanding nanowires grown by electron beam induced deposition 235
CBED STRAIN-MEASUREMENTS IN BORON IMPLANTED SILICON 235
Dynamical simulation of LACBED patterns in cross-sectioned heterostructures 234
Fabrication of 5 nm gap pillar-electrodes by electron-beam Pt deposition 234
Static disorder depth profile in ion implanted materials by means of large angle convergent beam electron diffraction 233
Effect of Nanocavities on the Thermoelectric Properties of Polycrystalline Silicon 233
FIB Preparation of a NiO Wedge-Lamella and STEM X-Ray Microanalysis for the Determination of the Experimental k(O-Ni) Cliff-Lorimer Coefficient 230
Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires 230
Totale 28.644
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Categoria #
all - tutte 158.477
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 158.477
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021496 0 0 0 0 0 0 0 0 0 0 292 204
2021/20223.127 156 290 464 148 86 141 344 142 314 262 457 323
2022/20233.096 327 331 238 212 411 591 52 295 427 26 97 89
2023/20241.678 57 132 68 259 345 145 166 214 43 32 68 149
2024/20257.355 239 80 88 532 1.300 1.058 530 475 662 390 958 1.043
2025/202611.458 833 678 1.420 1.177 1.690 1.118 1.551 647 1.300 1.040 4 0
Totale 43.458