BISI, Olmes
 Distribuzione geografica
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Continente #
NA - Nord America 14.743
AS - Asia 6.775
EU - Europa 5.776
SA - Sud America 715
AF - Africa 103
Continente sconosciuto - Info sul continente non disponibili 86
OC - Oceania 8
Totale 28.206
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Nazione #
US - Stati Uniti d'America 14.550
GB - Regno Unito 2.339
CN - Cina 2.292
SG - Singapore 1.966
SE - Svezia 858
HK - Hong Kong 694
VN - Vietnam 601
IT - Italia 586
BR - Brasile 547
DE - Germania 472
TR - Turchia 366
UA - Ucraina 363
FI - Finlandia 305
KR - Corea 270
RU - Federazione Russa 236
FR - Francia 188
BG - Bulgaria 134
BD - Bangladesh 127
IN - India 113
CA - Canada 106
AR - Argentina 61
LT - Lituania 51
JP - Giappone 49
BE - Belgio 42
IQ - Iraq 39
MX - Messico 38
ZA - Sudafrica 37
PL - Polonia 36
NL - Olanda 35
EC - Ecuador 30
ES - Italia 30
IR - Iran 30
PK - Pakistan 29
ID - Indonesia 27
AE - Emirati Arabi Uniti 22
CO - Colombia 22
IE - Irlanda 21
VE - Venezuela 21
PH - Filippine 20
MA - Marocco 17
UZ - Uzbekistan 16
JO - Giordania 14
IL - Israele 13
KE - Kenya 13
CL - Cile 11
CR - Costa Rica 11
MY - Malesia 11
SA - Arabia Saudita 11
CH - Svizzera 10
PY - Paraguay 10
RO - Romania 10
TH - Thailandia 9
DZ - Algeria 8
EG - Egitto 8
JM - Giamaica 8
AZ - Azerbaigian 7
CZ - Repubblica Ceca 7
EU - Europa 6
HU - Ungheria 6
PR - Porto Rico 6
PT - Portogallo 6
AL - Albania 5
DK - Danimarca 5
NP - Nepal 5
PE - Perù 5
SV - El Salvador 5
TW - Taiwan 5
UY - Uruguay 5
AT - Austria 4
AU - Australia 4
DO - Repubblica Dominicana 4
EE - Estonia 4
KG - Kirghizistan 4
KZ - Kazakistan 4
LK - Sri Lanka 4
MD - Moldavia 4
NO - Norvegia 4
NZ - Nuova Zelanda 4
QA - Qatar 4
RS - Serbia 4
TN - Tunisia 4
BO - Bolivia 3
BZ - Belize 3
CI - Costa d'Avorio 3
GE - Georgia 3
GT - Guatemala 3
KW - Kuwait 3
OM - Oman 3
PS - Palestinian Territory 3
BN - Brunei Darussalam 2
BW - Botswana 2
CY - Cipro 2
HN - Honduras 2
LB - Libano 2
NG - Nigeria 2
PA - Panama 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
SY - Repubblica araba siriana 2
ZM - Zambia 2
Totale 28.104
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Città #
Southend 1.805
Santa Clara 1.426
Ashburn 1.262
Fairfield 1.209
Singapore 1.194
Hefei 1.072
Woodbridge 947
Chandler 855
Jacksonville 812
Houston 787
Hong Kong 685
Ann Arbor 582
San Jose 565
Seattle 450
Wilmington 430
Dearborn 389
Cambridge 372
Council Bluffs 357
Nyköping 350
Beijing 342
London 283
Seoul 265
Des Moines 256
Los Angeles 211
Izmir 187
The Dalles 171
Ho Chi Minh City 169
Helsinki 165
Hanoi 151
Modena 137
Sofia 126
Chicago 124
Eugene 123
New York 123
Princeton 123
San Diego 111
Milan 107
Lauterbourg 97
Buffalo 86
Dallas 78
Shanghai 65
Columbus 62
Moscow 58
Munich 49
São Paulo 45
Salt Lake City 40
Bremen 39
Brussels 39
San Mateo 38
Boardman 35
Grafing 35
Guangzhou 35
Orem 35
Washington 33
Da Nang 32
Rome 30
Tokyo 30
Augusta 29
Haiphong 28
Leawood 27
Toronto 27
Miano 26
Montreal 26
Atlanta 25
Phoenix 25
Johannesburg 24
Dublin 23
Elk Grove Village 22
Kent 22
Warsaw 22
Ardabil 21
Brooklyn 21
Norwalk 21
Chennai 20
Falkenstein 20
Frankfurt am Main 20
Redwood City 20
Mumbai 19
Rio de Janeiro 19
Kunming 18
San Francisco 18
Detroit 17
Falls Church 17
Nanjing 17
Turku 17
Amsterdam 16
Belo Horizonte 16
Denver 16
Indiana 16
Brasília 15
Changsha 15
Hillsboro 15
Auburn Hills 14
Tashkent 14
Amman 13
Porto Alegre 13
Verona 13
Baghdad 12
Philadelphia 12
Stockholm 12
Totale 20.507
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Nome #
Accendiamo la mente per capire la luce: di tutto e di più sul filo invisibile che lega il mondo 361
A self-consistent calculation of the electronic structure of thin copper films 352
A chi la vera Gloria? Le verità della Scienza sulla Luce 336
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 333
Epoca - Eccellenza nei Processi Organizzativi e nella Corporate Analysis 331
Chemical bonding at the Si-metal interface: Si-Ni and Si-Cr 326
Electronic properties of clean (001) surfaces of Ir and Pt 322
Ab-initio calculation of the optical properties of silicon quantum wires 315
A THEORETICAL STUDY OF THE ELECTRONIC STRUCTURE OF PD (111) CLEAN SURFACE 314
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 312
Atomic intermixing and electronic interaction at the Pd - Si (111) interface 310
A theoretical study of ordered monolayer films of Copper 310
Absence of filled surface states in the s-p gap of clean (111) surface of Ag 308
First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping 308
Doping in silicon nanocrystals 305
The electronic and optical properties of silicon nanoclusters: absorption and emission 301
Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces 301
Chemical bond and electronic states in calcium silicides: theory and comparison with synchrotron radiation photoemission 301
An experimental and theoretical study of the electronic structure of the W (111) surface 300
Formation energies of silicon nanocrystals: role of dimension and passivation 295
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 295
Correlation effects in valence band spectra of Nickel Silicides 292
Electronic properties of Silicon - transition metal interface compounds 291
Porous silicon: A quantum sponge structure for silicon based optoelectronics 291
Electrical and optical properties of silicide single crystals and thin films 290
Gain theory and models in silicon nanostructures 288
A Test Chip for the Development of Porous Silicon Light Emitting Diodes 284
NEXAFS measurement of the p-symmetry unoccupied states of silver, palladium and palladium silicide 283
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 278
Electrical transport properties of V3Si, V5Si3 and VSi2 thin films 274
W (111): angle-resolved photoemission from the clean and H2 - covered surface 273
Dispersion of surface bands in W(100) surface 273
Coulomb correlation in Chromium compounds 271
Atelier "Raggio di luce" 271
Electrical characterization of alloy thin films of VSi2 and V3Si 271
sp-d hybridization effects on the electronic structure of the (100) surface in Copper 270
Effects of chemical environment in the lineshape of Silicon LVV Auger spectra of Nickel Silicides 270
Auger Lineshape analysis of porous silicon: Experiment and theory 270
Electron states of ultrathin Pd and Cu films on (001) Ag. 268
Covalency on the adsorption of Na on Si(111) 267
Electronic properties of metal rich Au-Si compounds and interfaces 264
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 264
X-ray absorption and emission from different atoms of the same compound: success and failure of the single-particle picture 261
Formation energies of silicon nanocrystals: role of dimension and passivation 258
The luminescence transition in porous silicon: The nature of the electronic states 255
The optical transition in porous Si: The effects of quantum confinement, surface states and hydrogen passivation 254
Chemical bond and electronic states in the CaF2-Si(111) and Ca-Si(111) interfaces 254
THE ELECTRONIC-PROPERTIES OF THE CAF2-SI(111) SYSTEM - FROM MONOLAYER COVERAGE TO SOLID SOLID INTERFACE 251
Perturbative valence charge density of trigonal Se and Te 251
Electrical and structural characterization of Nb - Si thin film alloys 251
Electronic structure and properties of Ni - Si (001) and Ni - Si (111) reactive interfaces 243
Role of the selfconsistency in the evaluation of the electronic structure of transition metal surfaces 243
Role of three-body interactions in the calculator of the total energy and the shear modulus of hexagonal metals 242
Importance of Coulomb correlation in Silicide spectra 240
Empty electronic states of calcium silicides: an inverse photoemission investigation in the ultraviolet photon range 239
The electronic structure of Au monolayer on (001) W 231
ELECTRONIC STATES AT THE (111) SURFACE OF NI DISILICIDE 230
Ca-silicides as prototypical systems for modelling the electron-states at the Si(111)/Yb interface: a Si- L2,3 Auger lineshape investigation 230
W(111) surface: an experimental and theoretical photoemission study 229
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 227
Porous Silicon and its application for Light Emitting Diodes 222
Light emitting porous silicon diode based on a silicon/porous silicon heterojunction 221
Initial formation of the CaF2 interface: a theoretical study 218
Linear-Combination-of-Atomic-Orbital description of the electron states at the (0001) surfaces of hexagonal-close-packed metals 218
Spectroscopic investigation of electroluminescent Porous Silicon 217
Electronic structure of Cr Silicides and Si-Cr interface reactions 217
The Ge/Au interface investigated with photoemission at the Cooper minimum 216
Silicon based microphotonic: from basics to applications 215
Electron Bombardment Effects on Light Emitting Porous Silicon 215
Theory of the Auger spectra of Ca-Si compounds 215
Electronic structure of Silicide - Silicon interfaces 213
Theory of Core-level Shifts of Clean and Covered Surfaces 213
Surface electronic states at the (110) surfaces of III-V compounds 213
Electronic Charge Trapping Effects in Porous Silicon 212
Surface bands of Ga containing III-V compounds 212
Valence band and core lines investigation on the Ge-Au system by photoelectron spectroscopy with synchrotron radiation 212
Confinement and passivation in isolated and coupled silicon quantum wires 210
Chemical bonding and properties of Condensed Phases of Carbon and Silicon 208
Electronic structure of compounds at Platinum -Silicon interface 208
Porous Silicon 208
Electronic and structural properties of semiconductor-metal and semiconductor-insulator interfaces 206
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES 204
First-principle calculation for the core level shifts of clean and covered surfaces 202
Electronic structure of Vanadium Silicides 200
The electonic structure of the (100) surface of Copper 200
Electrical and optical properties of near-noble silicides 200
Surface electron states at the (110) surfaces of III-V semiconductors 199
Transition metal Silicides: aspects of the chemical bond and trends in the electronic structure 199
Surface bands in relaxed cleavage surface of GaP 198
Silicon valence states in calcium silicides: A Si- L2,3 VV lineshape analysis 196
Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation 196
Preface of the Proceedings of the 3rd International-Conference on the Formation of Semiconductor Interfaces - Rome, Italy, May 6-10, 1991 194
Partial screening in Ca Silicides measured by Ca 2 p electron-energy -loss spectroscopy 194
The electronic properties of the Si (111) - transition metals interfaces 193
Electron states and luminescence transition in porous silicon 192
Perturbative theory and tree-body forces in h.c.p. metals 191
The electronic properties of Silicon - Silicide epitaxial interfaces 190
Electronic structure of CaSi and CaSi2 188
Optical properties of isolated and interacting silicon quantum wires 176
Structural and electronic properties of CaF2-Si(111) interface 170
Totale 24.999
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Categoria #
all - tutte 101.426
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 101.426
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.695 0 0 181 187 59 124 136 80 211 121 345 251
2022/20232.234 259 229 158 199 231 508 21 237 249 17 66 60
2023/2024981 41 88 54 125 168 59 69 108 59 35 75 100
2024/20254.800 214 59 121 257 1.050 667 287 255 419 322 580 569
2025/20267.480 632 506 788 774 886 816 752 395 717 634 322 258
2026/20271.110 313 509 288 0 0 0 0 0 0 0 0 0
Totale 28.206