BISI, Olmes
 Distribuzione geografica
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Continente #
NA - Nord America 13.995
AS - Asia 6.749
EU - Europa 5.747
SA - Sud America 706
AF - Africa 101
Continente sconosciuto - Info sul continente non disponibili 8
OC - Oceania 7
Totale 27.313
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Nazione #
US - Stati Uniti d'America 13.834
GB - Regno Unito 2.336
CN - Cina 2.283
SG - Singapore 1.962
SE - Svezia 858
HK - Hong Kong 690
VN - Vietnam 601
IT - Italia 562
BR - Brasile 543
DE - Germania 471
TR - Turchia 366
UA - Ucraina 363
FI - Finlandia 305
KR - Corea 270
RU - Federazione Russa 236
FR - Francia 188
BG - Bulgaria 134
BD - Bangladesh 122
IN - India 113
CA - Canada 91
AR - Argentina 60
LT - Lituania 51
JP - Giappone 49
BE - Belgio 42
IQ - Iraq 38
ZA - Sudafrica 37
MX - Messico 36
PL - Polonia 36
NL - Olanda 34
ES - Italia 30
IR - Iran 30
EC - Ecuador 28
ID - Indonesia 27
PK - Pakistan 27
AE - Emirati Arabi Uniti 22
CO - Colombia 21
IE - Irlanda 21
PH - Filippine 20
VE - Venezuela 20
MA - Marocco 17
UZ - Uzbekistan 16
JO - Giordania 14
IL - Israele 13
KE - Kenya 13
CL - Cile 11
MY - Malesia 11
SA - Arabia Saudita 11
CH - Svizzera 10
PY - Paraguay 10
RO - Romania 10
TH - Thailandia 9
CR - Costa Rica 8
DZ - Algeria 8
EG - Egitto 8
AZ - Azerbaigian 7
CZ - Repubblica Ceca 7
EU - Europa 6
HU - Ungheria 6
JM - Giamaica 6
PT - Portogallo 6
AL - Albania 5
DK - Danimarca 5
NP - Nepal 5
PE - Perù 5
PR - Porto Rico 5
TW - Taiwan 5
UY - Uruguay 5
AT - Austria 4
AU - Australia 4
DO - Repubblica Dominicana 4
EE - Estonia 4
KG - Kirghizistan 4
LK - Sri Lanka 4
MD - Moldavia 4
NO - Norvegia 4
QA - Qatar 4
RS - Serbia 4
SV - El Salvador 4
TN - Tunisia 4
BO - Bolivia 3
BZ - Belize 3
CI - Costa d'Avorio 3
GE - Georgia 3
KW - Kuwait 3
KZ - Kazakistan 3
NZ - Nuova Zelanda 3
OM - Oman 3
PS - Palestinian Territory 3
BN - Brunei Darussalam 2
BW - Botswana 2
CY - Cipro 2
LB - Libano 2
PA - Panama 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
SY - Repubblica araba siriana 2
ZM - Zambia 2
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
Totale 27.295
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Città #
Southend 1.805
Santa Clara 1.407
Fairfield 1.209
Singapore 1.193
Ashburn 1.143
Hefei 1.072
Woodbridge 947
Chandler 855
Jacksonville 812
Houston 786
Hong Kong 681
Ann Arbor 582
Seattle 446
Wilmington 428
San Jose 409
Dearborn 389
Cambridge 372
Nyköping 350
Beijing 341
London 283
Seoul 265
Des Moines 255
Los Angeles 191
Izmir 187
Council Bluffs 181
The Dalles 171
Ho Chi Minh City 169
Helsinki 165
Hanoi 151
Modena 137
Sofia 126
Chicago 123
Eugene 123
Princeton 123
New York 118
San Diego 111
Lauterbourg 97
Milan 92
Buffalo 78
Dallas 73
Shanghai 63
Moscow 58
Columbus 50
Munich 49
São Paulo 45
Salt Lake City 40
Bremen 39
Brussels 39
San Mateo 38
Boardman 35
Grafing 35
Guangzhou 35
Orem 35
Da Nang 32
Washington 32
Tokyo 30
Augusta 29
Haiphong 28
Rome 28
Leawood 27
Miano 26
Montreal 25
Toronto 25
Johannesburg 24
Atlanta 22
Elk Grove Village 22
Kent 22
Warsaw 22
Ardabil 21
Dublin 21
Norwalk 21
Brooklyn 20
Chennai 20
Falkenstein 20
Redwood City 20
Frankfurt am Main 19
Mumbai 19
Rio de Janeiro 19
Kunming 18
Phoenix 18
Falls Church 17
Nanjing 17
Turku 17
Amsterdam 16
Belo Horizonte 16
Detroit 16
Indiana 16
San Francisco 16
Brasília 15
Changsha 15
Denver 15
Hillsboro 15
Auburn Hills 14
Tashkent 14
Amman 13
Porto Alegre 13
Baghdad 12
Stockholm 12
Verona 12
New Delhi 11
Totale 19.929
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Nome #
Accendiamo la mente per capire la luce: di tutto e di più sul filo invisibile che lega il mondo 356
A self-consistent calculation of the electronic structure of thin copper films 345
A chi la vera Gloria? Le verità della Scienza sulla Luce 330
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 327
Chemical bonding at the Si-metal interface: Si-Ni and Si-Cr 322
Epoca - Eccellenza nei Processi Organizzativi e nella Corporate Analysis 320
Electronic properties of clean (001) surfaces of Ir and Pt 316
Ab-initio calculation of the optical properties of silicon quantum wires 309
A THEORETICAL STUDY OF THE ELECTRONIC STRUCTURE OF PD (111) CLEAN SURFACE 308
Absence of filled surface states in the s-p gap of clean (111) surface of Ag 303
A theoretical study of ordered monolayer films of Copper 303
First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping 303
Atomic intermixing and electronic interaction at the Pd - Si (111) interface 302
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 302
The electronic and optical properties of silicon nanoclusters: absorption and emission 299
Doping in silicon nanocrystals 297
Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces 296
An experimental and theoretical study of the electronic structure of the W (111) surface 293
Chemical bond and electronic states in calcium silicides: theory and comparison with synchrotron radiation photoemission 292
Formation energies of silicon nanocrystals: role of dimension and passivation 289
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 288
Gain theory and models in silicon nanostructures 285
Correlation effects in valence band spectra of Nickel Silicides 284
Electrical and optical properties of silicide single crystals and thin films 283
Electronic properties of Silicon - transition metal interface compounds 282
A Test Chip for the Development of Porous Silicon Light Emitting Diodes 279
Porous silicon: A quantum sponge structure for silicon based optoelectronics 279
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 273
NEXAFS measurement of the p-symmetry unoccupied states of silver, palladium and palladium silicide 271
Electrical characterization of alloy thin films of VSi2 and V3Si 268
Effects of chemical environment in the lineshape of Silicon LVV Auger spectra of Nickel Silicides 266
Coulomb correlation in Chromium compounds 266
Atelier "Raggio di luce" 266
Dispersion of surface bands in W(100) surface 266
Electrical transport properties of V3Si, V5Si3 and VSi2 thin films 265
sp-d hybridization effects on the electronic structure of the (100) surface in Copper 265
Electron states of ultrathin Pd and Cu films on (001) Ag. 264
W (111): angle-resolved photoemission from the clean and H2 - covered surface 263
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 262
Electronic properties of metal rich Au-Si compounds and interfaces 259
Covalency on the adsorption of Na on Si(111) 258
Auger Lineshape analysis of porous silicon: Experiment and theory 257
Formation energies of silicon nanocrystals: role of dimension and passivation 254
The luminescence transition in porous silicon: The nature of the electronic states 250
The optical transition in porous Si: The effects of quantum confinement, surface states and hydrogen passivation 248
Perturbative valence charge density of trigonal Se and Te 248
X-ray absorption and emission from different atoms of the same compound: success and failure of the single-particle picture 247
Electrical and structural characterization of Nb - Si thin film alloys 246
Role of the selfconsistency in the evaluation of the electronic structure of transition metal surfaces 240
Role of three-body interactions in the calculator of the total energy and the shear modulus of hexagonal metals 238
THE ELECTRONIC-PROPERTIES OF THE CAF2-SI(111) SYSTEM - FROM MONOLAYER COVERAGE TO SOLID SOLID INTERFACE 237
Electronic structure and properties of Ni - Si (001) and Ni - Si (111) reactive interfaces 236
Chemical bond and electronic states in the CaF2-Si(111) and Ca-Si(111) interfaces 234
Importance of Coulomb correlation in Silicide spectra 231
Empty electronic states of calcium silicides: an inverse photoemission investigation in the ultraviolet photon range 231
ELECTRONIC STATES AT THE (111) SURFACE OF NI DISILICIDE 226
The electronic structure of Au monolayer on (001) W 226
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 220
Porous Silicon and its application for Light Emitting Diodes 217
Ca-silicides as prototypical systems for modelling the electron-states at the Si(111)/Yb interface: a Si- L2,3 Auger lineshape investigation 217
Light emitting porous silicon diode based on a silicon/porous silicon heterojunction 216
W(111) surface: an experimental and theoretical photoemission study 214
Initial formation of the CaF2 interface: a theoretical study 213
Electronic structure of Cr Silicides and Si-Cr interface reactions 211
Theory of the Auger spectra of Ca-Si compounds 210
Electron Bombardment Effects on Light Emitting Porous Silicon 209
Electronic Charge Trapping Effects in Porous Silicon 208
Electronic structure of Silicide - Silicon interfaces 207
Theory of Core-level Shifts of Clean and Covered Surfaces 207
The Ge/Au interface investigated with photoemission at the Cooper minimum 206
Surface bands of Ga containing III-V compounds 206
Valence band and core lines investigation on the Ge-Au system by photoelectron spectroscopy with synchrotron radiation 206
Spectroscopic investigation of electroluminescent Porous Silicon 206
Silicon based microphotonic: from basics to applications 205
Surface electronic states at the (110) surfaces of III-V compounds 204
Linear-Combination-of-Atomic-Orbital description of the electron states at the (0001) surfaces of hexagonal-close-packed metals 203
Chemical bonding and properties of Condensed Phases of Carbon and Silicon 202
Porous Silicon 202
Electronic and structural properties of semiconductor-metal and semiconductor-insulator interfaces 202
Confinement and passivation in isolated and coupled silicon quantum wires 201
Electronic structure of compounds at Platinum -Silicon interface 200
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES 198
Electronic structure of Vanadium Silicides 197
First-principle calculation for the core level shifts of clean and covered surfaces 195
Surface electron states at the (110) surfaces of III-V semiconductors 194
Electrical and optical properties of near-noble silicides 194
The electonic structure of the (100) surface of Copper 192
Surface bands in relaxed cleavage surface of GaP 190
Transition metal Silicides: aspects of the chemical bond and trends in the electronic structure 190
Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation 190
Preface of the Proceedings of the 3rd International-Conference on the Formation of Semiconductor Interfaces - Rome, Italy, May 6-10, 1991 188
The electronic properties of Silicon - Silicide epitaxial interfaces 188
Electron states and luminescence transition in porous silicon 186
Silicon valence states in calcium silicides: A Si- L2,3 VV lineshape analysis 185
The electronic properties of the Si (111) - transition metals interfaces 184
Perturbative theory and tree-body forces in h.c.p. metals 183
Electronic structure of CaSi and CaSi2 182
Partial screening in Ca Silicides measured by Ca 2 p electron-energy -loss spectroscopy 181
Optical properties of isolated and interacting silicon quantum wires 174
Structural and electronic properties of CaF2-Si(111) interface 167
Totale 24.303
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Categoria #
all - tutte 97.863
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 97.863
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.992 18 279 181 187 59 124 136 80 211 121 345 251
2022/20232.234 259 229 158 199 231 508 21 237 249 17 66 60
2023/2024981 41 88 54 125 168 59 69 108 59 35 75 100
2024/20254.800 214 59 121 257 1.050 667 287 255 419 322 580 569
2025/20267.480 632 506 788 774 886 816 752 395 717 634 322 258
2026/2027295 295 0 0 0 0 0 0 0 0 0 0 0
Totale 27.391