BISI, Olmes
 Distribuzione geografica
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Continente #
NA - Nord America 13.418
AS - Asia 6.653
EU - Europa 5.665
SA - Sud America 688
AF - Africa 100
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 7
Totale 26.538
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Nazione #
US - Stati Uniti d'America 13.287
GB - Regno Unito 2.336
CN - Cina 2.269
SG - Singapore 1.946
SE - Svezia 858
HK - Hong Kong 688
VN - Vietnam 601
BR - Brasile 534
IT - Italia 495
DE - Germania 467
TR - Turchia 366
UA - Ucraina 363
FI - Finlandia 305
KR - Corea 270
RU - Federazione Russa 235
FR - Francia 186
BG - Bulgaria 133
IN - India 113
CA - Canada 74
BD - Bangladesh 61
AR - Argentina 56
LT - Lituania 51
JP - Giappone 49
BE - Belgio 41
IQ - Iraq 38
ZA - Sudafrica 37
PL - Polonia 35
MX - Messico 34
NL - Olanda 34
IR - Iran 30
EC - Ecuador 28
ES - Italia 28
PK - Pakistan 27
ID - Indonesia 25
AE - Emirati Arabi Uniti 22
IE - Irlanda 21
PH - Filippine 20
VE - Venezuela 20
CO - Colombia 18
MA - Marocco 17
UZ - Uzbekistan 16
JO - Giordania 14
IL - Israele 13
KE - Kenya 13
SA - Arabia Saudita 11
CH - Svizzera 10
MY - Malesia 10
PY - Paraguay 10
CL - Cile 9
RO - Romania 9
TH - Thailandia 9
DZ - Algeria 8
EG - Egitto 8
AZ - Azerbaigian 7
CZ - Repubblica Ceca 7
EU - Europa 6
HU - Ungheria 6
PT - Portogallo 6
AL - Albania 5
DK - Danimarca 5
JM - Giamaica 5
NP - Nepal 5
PE - Perù 5
TW - Taiwan 5
UY - Uruguay 5
AT - Austria 4
AU - Australia 4
DO - Repubblica Dominicana 4
EE - Estonia 4
KG - Kirghizistan 4
LK - Sri Lanka 4
MD - Moldavia 4
QA - Qatar 4
RS - Serbia 4
TN - Tunisia 4
BO - Bolivia 3
BZ - Belize 3
CI - Costa d'Avorio 3
CR - Costa Rica 3
GE - Georgia 3
KW - Kuwait 3
KZ - Kazakistan 3
NO - Norvegia 3
NZ - Nuova Zelanda 3
OM - Oman 3
PR - Porto Rico 3
PS - Palestinian Territory 3
BN - Brunei Darussalam 2
BW - Botswana 2
CY - Cipro 2
LB - Libano 2
PA - Panama 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
SY - Repubblica araba siriana 2
ZM - Zambia 2
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BY - Bielorussia 1
Totale 26.523
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Città #
Southend 1.805
Santa Clara 1.357
Fairfield 1.209
Singapore 1.189
Hefei 1.072
Ashburn 1.032
Woodbridge 947
Chandler 855
Jacksonville 812
Houston 783
Hong Kong 679
Ann Arbor 582
Seattle 445
Wilmington 427
Dearborn 389
Cambridge 372
Nyköping 350
Beijing 337
San Jose 314
London 283
Seoul 265
Des Moines 255
Izmir 187
Los Angeles 175
The Dalles 171
Ho Chi Minh City 169
Helsinki 165
Hanoi 151
Council Bluffs 136
Modena 129
Sofia 125
Eugene 123
Princeton 123
Chicago 119
San Diego 110
New York 106
Lauterbourg 97
Milan 83
Buffalo 73
Dallas 69
Shanghai 61
Moscow 58
Columbus 49
Munich 49
São Paulo 45
Salt Lake City 40
Bremen 39
Brussels 38
San Mateo 38
Grafing 35
Guangzhou 35
Orem 34
Da Nang 32
Tokyo 30
Washington 30
Augusta 29
Boardman 29
Haiphong 28
Leawood 27
Rome 26
Johannesburg 24
Montreal 24
Miano 23
Elk Grove Village 22
Warsaw 22
Ardabil 21
Dublin 21
Kent 21
Norwalk 21
Toronto 21
Brooklyn 20
Chennai 20
Falkenstein 20
Redwood City 20
Atlanta 19
Frankfurt am Main 19
Mumbai 19
Rio de Janeiro 19
Kunming 18
Falls Church 17
Nanjing 17
Turku 17
Amsterdam 16
Belo Horizonte 16
Indiana 16
Phoenix 16
Brasília 15
Changsha 15
Detroit 15
Hillsboro 15
Auburn Hills 14
Denver 14
San Francisco 14
Tashkent 14
Amman 13
Porto Alegre 13
Baghdad 12
Stockholm 12
Verona 12
New Delhi 11
Totale 19.520
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Nome #
A self-consistent calculation of the electronic structure of thin copper films 340
Accendiamo la mente per capire la luce: di tutto e di più sul filo invisibile che lega il mondo 340
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 320
A chi la vera Gloria? Le verità della Scienza sulla Luce 320
Chemical bonding at the Si-metal interface: Si-Ni and Si-Cr 316
Epoca - Eccellenza nei Processi Organizzativi e nella Corporate Analysis 315
Electronic properties of clean (001) surfaces of Ir and Pt 312
A THEORETICAL STUDY OF THE ELECTRONIC STRUCTURE OF PD (111) CLEAN SURFACE 307
Ab-initio calculation of the optical properties of silicon quantum wires 304
Absence of filled surface states in the s-p gap of clean (111) surface of Ag 302
A theoretical study of ordered monolayer films of Copper 294
Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces 292
The electronic and optical properties of silicon nanoclusters: absorption and emission 290
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 289
Chemical bond and electronic states in calcium silicides: theory and comparison with synchrotron radiation photoemission 288
An experimental and theoretical study of the electronic structure of the W (111) surface 286
Atomic intermixing and electronic interaction at the Pd - Si (111) interface 284
Formation energies of silicon nanocrystals: role of dimension and passivation 282
First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping 282
Electronic properties of Silicon - transition metal interface compounds 279
Doping in silicon nanocrystals 279
Gain theory and models in silicon nanostructures 278
Correlation effects in valence band spectra of Nickel Silicides 278
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 276
A Test Chip for the Development of Porous Silicon Light Emitting Diodes 273
Electrical and optical properties of silicide single crystals and thin films 273
Porous silicon: A quantum sponge structure for silicon based optoelectronics 268
Effects of chemical environment in the lineshape of Silicon LVV Auger spectra of Nickel Silicides 263
Coulomb correlation in Chromium compounds 263
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 263
Atelier "Raggio di luce" 262
Dispersion of surface bands in W(100) surface 262
Electrical characterization of alloy thin films of VSi2 and V3Si 261
sp-d hybridization effects on the electronic structure of the (100) surface in Copper 259
W (111): angle-resolved photoemission from the clean and H2 - covered surface 259
Electron states of ultrathin Pd and Cu films on (001) Ag. 259
Covalency on the adsorption of Na on Si(111) 255
Auger Lineshape analysis of porous silicon: Experiment and theory 253
Electronic properties of metal rich Au-Si compounds and interfaces 252
Formation energies of silicon nanocrystals: role of dimension and passivation 248
The luminescence transition in porous silicon: The nature of the electronic states 247
Electrical transport properties of V3Si, V5Si3 and VSi2 thin films 246
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 246
The optical transition in porous Si: The effects of quantum confinement, surface states and hydrogen passivation 245
Perturbative valence charge density of trigonal Se and Te 245
X-ray absorption and emission from different atoms of the same compound: success and failure of the single-particle picture 243
THE ELECTRONIC-PROPERTIES OF THE CAF2-SI(111) SYSTEM - FROM MONOLAYER COVERAGE TO SOLID SOLID INTERFACE 236
Role of three-body interactions in the calculator of the total energy and the shear modulus of hexagonal metals 233
Role of the selfconsistency in the evaluation of the electronic structure of transition metal surfaces 232
Electronic structure and properties of Ni - Si (001) and Ni - Si (111) reactive interfaces 229
Empty electronic states of calcium silicides: an inverse photoemission investigation in the ultraviolet photon range 226
Importance of Coulomb correlation in Silicide spectra 224
ELECTRONIC STATES AT THE (111) SURFACE OF NI DISILICIDE 223
The electronic structure of Au monolayer on (001) W 223
Chemical bond and electronic states in the CaF2-Si(111) and Ca-Si(111) interfaces 223
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 218
Ca-silicides as prototypical systems for modelling the electron-states at the Si(111)/Yb interface: a Si- L2,3 Auger lineshape investigation 213
Porous Silicon and its application for Light Emitting Diodes 212
Initial formation of the CaF2 interface: a theoretical study 210
W(111) surface: an experimental and theoretical photoemission study 210
Electrical and structural characterization of Nb - Si thin film alloys 209
Light emitting porous silicon diode based on a silicon/porous silicon heterojunction 208
Electronic structure of Cr Silicides and Si-Cr interface reactions 208
Electron Bombardment Effects on Light Emitting Porous Silicon 206
The Ge/Au interface investigated with photoemission at the Cooper minimum 205
Theory of the Auger spectra of Ca-Si compounds 204
Surface bands of Ga containing III-V compounds 203
Electronic structure of Silicide - Silicon interfaces 202
Valence band and core lines investigation on the Ge-Au system by photoelectron spectroscopy with synchrotron radiation 202
Silicon based microphotonic: from basics to applications 201
Chemical bonding and properties of Condensed Phases of Carbon and Silicon 201
Electronic Charge Trapping Effects in Porous Silicon 201
Electronic structure of compounds at Platinum -Silicon interface 199
Linear-Combination-of-Atomic-Orbital description of the electron states at the (0001) surfaces of hexagonal-close-packed metals 199
Porous Silicon 199
Electronic and structural properties of semiconductor-metal and semiconductor-insulator interfaces 199
Confinement and passivation in isolated and coupled silicon quantum wires 199
Surface electronic states at the (110) surfaces of III-V compounds 198
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES 197
Theory of Core-level Shifts of Clean and Covered Surfaces 196
Electronic structure of Vanadium Silicides 195
NEXAFS measurement of the p-symmetry unoccupied states of silver, palladium and palladium silicide 194
Spectroscopic investigation of electroluminescent Porous Silicon 193
Surface electron states at the (110) surfaces of III-V semiconductors 190
First-principle calculation for the core level shifts of clean and covered surfaces 189
Electrical and optical properties of near-noble silicides 188
The electonic structure of the (100) surface of Copper 187
Surface bands in relaxed cleavage surface of GaP 186
Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation 186
The electronic properties of Silicon - Silicide epitaxial interfaces 186
Preface of the Proceedings of the 3rd International-Conference on the Formation of Semiconductor Interfaces - Rome, Italy, May 6-10, 1991 184
Transition metal Silicides: aspects of the chemical bond and trends in the electronic structure 184
The electronic properties of the Si (111) - transition metals interfaces 183
Silicon valence states in calcium silicides: A Si- L2,3 VV lineshape analysis 182
Electron states and luminescence transition in porous silicon 181
Electronic structure of CaSi and CaSi2 180
Perturbative theory and tree-body forces in h.c.p. metals 177
Optical properties of isolated and interacting silicon quantum wires 168
Partial screening in Ca Silicides measured by Ca 2 p electron-energy -loss spectroscopy 168
Structural and electronic properties of CaF2-Si(111) interface 165
Totale 23.612
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Categoria #
all - tutte 91.586
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 91.586
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021370 0 0 0 0 0 0 0 0 0 0 262 108
2021/20221.992 18 279 181 187 59 124 136 80 211 121 345 251
2022/20232.234 259 229 158 199 231 508 21 237 249 17 66 60
2023/2024981 41 88 54 125 168 59 69 108 59 35 75 100
2024/20254.800 214 59 121 257 1.050 667 287 255 419 322 580 569
2025/20267.000 632 506 788 774 886 816 752 395 717 634 100 0
Totale 26.616