OSSICINI, Stefano
 Distribuzione geografica
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Continente #
NA - Nord America 31.646
AS - Asia 12.861
EU - Europa 11.672
SA - Sud America 1.557
Continente sconosciuto - Info sul continente non disponibili 277
AF - Africa 217
OC - Oceania 21
Totale 58.251
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Nazione #
US - Stati Uniti d'America 31.250
GB - Regno Unito 4.280
CN - Cina 4.107
SG - Singapore 3.709
SE - Svezia 1.590
IT - Italia 1.502
HK - Hong Kong 1.431
VN - Vietnam 1.354
BR - Brasile 1.193
DE - Germania 1.105
UA - Ucraina 729
RU - Federazione Russa 566
FR - Francia 522
FI - Finlandia 520
TR - Turchia 488
KR - Corea 466
BD - Bangladesh 361
BG - Bulgaria 295
IN - India 201
CA - Canada 195
AR - Argentina 125
JP - Giappone 110
NL - Olanda 93
ID - Indonesia 92
MX - Messico 92
IQ - Iraq 79
ES - Italia 66
ZA - Sudafrica 65
AE - Emirati Arabi Uniti 63
BE - Belgio 58
IE - Irlanda 55
EC - Ecuador 53
LT - Lituania 48
PK - Pakistan 48
PL - Polonia 47
MY - Malesia 45
CO - Colombia 41
MA - Marocco 41
RO - Romania 38
CL - Cile 37
VE - Venezuela 36
PH - Filippine 33
SA - Arabia Saudita 32
PE - Perù 29
IR - Iran 27
TH - Thailandia 27
IL - Israele 25
CR - Costa Rica 24
TN - Tunisia 24
KE - Kenya 23
CH - Svizzera 20
PY - Paraguay 19
UZ - Uzbekistan 18
AU - Australia 17
AZ - Azerbaigian 17
DZ - Algeria 16
JO - Giordania 16
UY - Uruguay 16
AT - Austria 15
CZ - Repubblica Ceca 15
GR - Grecia 14
JM - Giamaica 14
NP - Nepal 13
BZ - Belize 12
EG - Egitto 12
PT - Portogallo 12
AL - Albania 11
QA - Qatar 11
KG - Kirghizistan 10
KZ - Kazakistan 10
RS - Serbia 10
TW - Taiwan 10
DO - Repubblica Dominicana 9
HN - Honduras 9
NO - Norvegia 9
BY - Bielorussia 8
DK - Danimarca 8
HU - Ungheria 8
BO - Bolivia 7
OM - Oman 7
PA - Panama 7
AO - Angola 6
LK - Sri Lanka 6
LV - Lettonia 6
NG - Nigeria 6
NI - Nicaragua 6
AM - Armenia 5
GT - Guatemala 5
KH - Cambogia 5
MD - Moldavia 5
PR - Porto Rico 5
SN - Senegal 5
SV - El Salvador 5
SY - Repubblica araba siriana 5
BB - Barbados 4
CY - Cipro 4
EU - Europa 4
GE - Georgia 4
KW - Kuwait 4
NZ - Nuova Zelanda 4
Totale 57.914
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Città #
Southend 3.179
Fairfield 3.164
Ashburn 2.862
Santa Clara 2.564
Singapore 2.364
Woodbridge 2.002
Houston 1.911
Hefei 1.762
Chandler 1.715
Jacksonville 1.624
Hong Kong 1.409
Seattle 1.227
Wilmington 1.099
Dearborn 1.096
San Jose 1.067
Cambridge 1.058
Ann Arbor 1.050
Nyköping 707
London 640
Beijing 632
Council Bluffs 519
Los Angeles 439
Seoul 428
Ho Chi Minh City 410
Chicago 402
The Dalles 362
Hanoi 314
San Diego 295
Sofia 282
Princeton 272
Izmir 259
Helsinki 247
Eugene 243
Milan 233
New York 221
Des Moines 216
Lauterbourg 205
Modena 205
Dallas 194
Salt Lake City 172
Buffalo 166
Moscow 118
Bremen 106
São Paulo 102
Shanghai 101
Rome 91
Da Nang 74
Orem 68
Tampa 68
Munich 66
Atlanta 65
Haiphong 64
Kent 64
Washington 63
Elk Grove Village 62
Frankfurt am Main 60
Tokyo 56
Jakarta 55
Brussels 54
Phoenix 54
Boardman 53
Toronto 53
Miano 52
Dublin 50
Sterling 48
Bologna 46
Montreal 46
Paris 45
Guangzhou 44
Brooklyn 43
Norwalk 43
Redwood City 42
San Francisco 42
Nanjing 40
Verona 39
Rio de Janeiro 38
Detroit 36
Redondo Beach 36
Falls Church 35
Kunming 35
Turku 35
Columbus 34
Miami 34
Warsaw 32
Indiana 31
Jinan 31
Johannesburg 31
Falkenstein 30
Hải Dương 29
Newark 29
Barcelona 28
Belo Horizonte 28
San Mateo 28
Chennai 27
Lancaster 27
Parma 27
Augusta 26
Boston 26
Brantford 26
Charlotte 26
Totale 42.058
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Nome #
Doped and codoped silicon nanocrystals: The role of surfaces and interfaces 457
Silicon−Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications 389
Electron Transport in SiGe Alloy nanowires in the Ballistic Regime from First Principles 385
Determination of the Electronic Energy Levels of Colloidal Nanocrystals using Field-Effect Transistors and Ab-Initio Calculations 380
From Si Nanowires to Porous Silicon: The Role of Excitonic Effects 366
First Principle Studies of B and P Doped Si Nanocrystals 361
Codoping goes Nano: Structural and Optical Properties of Boron and Phosphorus Codoped Silicon Nanocrystals 345
Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results 344
Ab-initio investigation of the polarization anisotropy of the optical absorption in (InGa)As-InP superlattices 333
A chi la vera Gloria? Le verità della Scienza sulla Luce 330
Ab initio optoelectronic properties of SiGe nanowires: Role of many-body effects 328
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 327
Segregation, quantum confinement effect and band offset for [110] SiGe NWs 326
Surface and confinement effects on the optical and structural properties of silicon nanocrystals 325
Ab-initio Electronic and Optical Properties of Low Dimensional Systems: from Single Particle to Many Body Approaches 324
Ab Initio Electronic Gaps of Ge Nanodots: The Role of Self-Energy Effects 321
Band-offset driven efficiency of the doping of SiGe core-shell. nanowires 319
SiGe nanowires: structural stability, quantum confinement and electronic properties 318
Red-shifted carrier multiplication energy threshold and exciton recycling mechanisms in strongly interacting silicon nanocrystals. 314
Band-offset driven efficiency of the doping of SiGe core-shell nanowires 313
Monte Carlo simulation of electron transport in Si/SiO2 superlattices 312
Ab-initio calculation of the optical properties of silicon quantum wires 309
Energetics and carrier transport in doped Si/SiO2 quantum dots 308
First-principles calculations of electronic coupling effects in silicon nanocrystals: Influence on near band-edge states and on carrier multiplication processes 308
Electronic structure of the 1x1 YBa2Cu3O7/PrBa2Cu3O7 superlattice: a local spin density approximation with on-site Coulomb interaction 303
First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping 303
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 302
Strain-designed strategy to induce and enhance second-harmonic generation in centrosymmetric and noncentrosymmetric materials 300
The electronic and optical properties of silicon nanoclusters: absorption and emission 299
Doping in silicon nanocrystals 298
Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties 298
Auger recombination in Si and GaAs semiconductors : Ab initio results 298
Doping in silicon nanostructures 297
High Luminescence in small Si/SiO2 Nanocrystals: a theoretical study 297
Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy 297
Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces 296
Formation energies of silicon nanocrystals: role of dimension and passivation 292
Second-harmonic Generation Spectroscopy from Time-dependent Density-functional Theory 291
Role of surface passivation and doping in silicon nanocrystals 289
L'imganno di Mesmer e la commissione Franklin-Lvoisier 289
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 288
AES analysis of the growth mechanism of metal layers on metal surfaces 286
Gain theory and models in silicon nanostructures 285
Optically- induced defects in Si-H nanoparticles 285
First-principle investigations of carrier multiplication in Si nanocrystals: A short review 284
Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics 283
Second Harmonic Generation in Silicon Based Heterostructures: The Role of Strain and Symmetry 283
Porous silicon: A quantum sponge structure for silicon based optoelectronics 281
Semiclassical and quantum transport in Si/SiO2 superlattices 280
Carrier multiplication in silicon nanocrystals: ab initio results 279
I Pinocchi della scienza: Cattive condotte e la struttura della ricerca scientifica THE PINOCCHIOS OF SCIENCE: Misconduct and the Structure of Scientific Research 276
The electronic and optical properties of InGaAs/InP and InAlAs/InP superlattices 275
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 274
Electronic and optical properties of silicon nanocrystals: structural effects 271
Electronic and Optical Properties of Silicon Nanocrystals 271
First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications 270
Silicon quantum dots embedded in a SiO2 matrix: From structural study to carrier transport properties 270
THEORETICAL STUDIES OF ABSORPTION, EMISSION AND GAIN IN SILICON NANOSTRUCTURES 269
Carrier Multiplication in Isolated and Interacting Silicon Nanocrystals 268
Gain theory and models in silicon nanostructures 267
Quasi-particle band structure of NiO: The Mott-Hubbard picture regained 266
Ab initio study on oxidized silicon clusters and silicon nanocrystals embedded in SiO2 : Beyond the quantum confinement effect 265
Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties 263
Silicon nanocrystals in carbide matrix 263
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 262
Local-fields and disorder effects in free-standing and embedded Si nanocrystallites 261
First-principles study of n- and p-doped silicon nanoclusters 259
Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices 259
Understanding doping in silicon nanostructures 258
Covalency on the adsorption of Na on Si(111) 258
Auger Lineshape analysis of porous silicon: Experiment and theory 257
Image force effects in the barrier height for metal-metal tunneling electrons 255
Electronic and optical properties of Si and Ge nanocrystals: an ab-initio study 255
Work function bowing in Si1−xGex heterostructures: Ab initio results 255
Structural, Electronic and Surface Properties of Anatase TiO2 Nanocrystals from First Principles 255
Role of interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2 254
The Role of the Surface Coverage on the Structural and the Electronic Properties of TiO2 Nanocrystals 254
Formation energies of silicon nanocrystals: role of dimension and passivation 254
ELECTRONIC-STRUCTURE OF THIN SI LAYERS IN CAF2 - HYBRIDIZATION VERSUS CONFINEMENT 253
The He *(1s, 2s)+Ne interaction potential 253
Silicon nanocrystals from high-temperature annealing: Characterization on device level 253
The luminescence transition in porous silicon: The nature of the electronic states 251
From undulating Si quantum wires to Si quantum dots: a model for porous silicon 250
Carrier Multiplication in Silicon Nanocrystals: Theoretical Methodologies and Role of the Passivation 249
The optical transition in porous Si: The effects of quantum confinement, surface states and hydrogen passivation 248
Electronic vacancy states in silicon by the chemical pseudopotential method 248
Silicon nanocrystallites in a SiO2 matrix: Role of disorder and size 247
Optical properties of silicon nanocrystallites in SiO2 matrix:Crystalline vs. amorphous case 247
Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase 246
Novel optoelectronic properties of simultaneously n- and p-doped silicon nanostructures 245
Monte Carlo analysis of electron heating in Si/SiO2 superlattices 243
Hydrogen covered Si(111) surfaces 243
Local-fields effects in silicon nanoclusters 243
IN PLANE ANISOTROPY OF THE OPTICAL PROPERTIES OF (In0.5Ga0.5As)n/(InP)n SUPERLATTICES. 242
Role of strain in interacting silicon nanoclusters 242
ROLE OF SYMMETRY REDUCTION IN THE POLARIZATION DEPENDENCE OF THE OPTICAL ABSORPTION IN NON-COMMON ATOM SUPERLATTICES 241
Si nanostructures embedded in SiO[sub 2]: electronic and optical properties 241
Silicon quantum dots in photovoltaic devices: device fabrication, characterization and comparison of materials 241
THE ELECTRONIC-PROPERTIES OF THE CAF2-SI(111) SYSTEM - FROM MONOLAYER COVERAGE TO SOLID SOLID INTERFACE 240
Ab initio energy loss spectra of Si and Ge nanowires 240
Totale 28.495
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Categoria #
all - tutte 225.819
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 225.819
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20224.374 0 682 367 348 87 205 289 206 480 340 860 510
2022/20234.653 557 492 298 361 537 827 79 460 558 27 138 319
2023/20242.182 100 171 109 296 422 150 192 221 106 46 133 236
2024/20259.003 389 125 183 588 1.881 1.171 442 669 904 560 1.009 1.082
2025/202616.170 1.003 1.068 1.748 1.818 2.043 1.666 1.732 708 1.334 1.415 828 807
2026/2027619 596 23 0 0 0 0 0 0 0 0 0 0
Totale 58.251