OTTAVIANI, Giampiero
 Distribuzione geografica
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Continente #
NA - Nord America 12.017
EU - Europa 4.976
AS - Asia 4.715
SA - Sud America 468
Continente sconosciuto - Info sul continente non disponibili 89
AF - Africa 86
OC - Oceania 8
Totale 22.359
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Nazione #
US - Stati Uniti d'America 11.811
GB - Regno Unito 2.611
SG - Singapore 1.518
CN - Cina 1.381
HK - Hong Kong 556
SE - Svezia 483
DE - Germania 466
VN - Vietnam 413
IT - Italia 386
BR - Brasile 361
UA - Ucraina 234
RU - Federazione Russa 192
BD - Bangladesh 179
TR - Turchia 176
FR - Francia 168
FI - Finlandia 165
KR - Corea 162
CA - Canada 126
BG - Bulgaria 88
IN - India 76
MX - Messico 45
JP - Giappone 38
AR - Argentina 37
NL - Olanda 30
ID - Indonesia 26
IQ - Iraq 25
AE - Emirati Arabi Uniti 23
PL - Polonia 22
ZA - Sudafrica 21
IE - Irlanda 19
CO - Colombia 17
ES - Italia 17
PH - Filippine 17
TW - Taiwan 17
BE - Belgio 15
EC - Ecuador 15
MA - Marocco 15
MY - Malesia 15
PK - Pakistan 15
CH - Svizzera 14
AT - Austria 11
CL - Cile 11
DZ - Algeria 11
HR - Croazia 11
KE - Kenya 9
TN - Tunisia 9
UZ - Uzbekistan 9
VE - Venezuela 9
EU - Europa 8
PE - Perù 8
SA - Arabia Saudita 8
BY - Bielorussia 7
AU - Australia 6
EG - Egitto 6
JM - Giamaica 6
LT - Lituania 6
AZ - Azerbaigian 5
JO - Giordania 5
LB - Libano 5
PA - Panama 5
RS - Serbia 5
BO - Bolivia 4
CR - Costa Rica 4
KZ - Kazakistan 4
NP - Nepal 4
OM - Oman 4
PY - Paraguay 4
RO - Romania 4
TT - Trinidad e Tobago 4
BH - Bahrain 3
CY - Cipro 3
DK - Danimarca 3
DO - Repubblica Dominicana 3
EE - Estonia 3
GE - Georgia 3
GT - Guatemala 3
HN - Honduras 3
HU - Ungheria 3
IL - Israele 3
LV - Lettonia 3
PR - Porto Rico 3
PS - Palestinian Territory 3
PT - Portogallo 3
SN - Senegal 3
TH - Thailandia 3
CI - Costa d'Avorio 2
ET - Etiopia 2
IR - Iran 2
KG - Kirghizistan 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
MN - Mongolia 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
SK - Slovacchia (Repubblica Slovacca) 2
UY - Uruguay 2
AF - Afghanistan, Repubblica islamica di 1
AG - Antigua e Barbuda 1
AM - Armenia 1
AO - Angola 1
Totale 22.261
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Città #
Southend 2.166
Ashburn 1.313
Fairfield 1.239
Santa Clara 1.101
Singapore 975
Woodbridge 802
Houston 670
Chandler 593
Hefei 587
Hong Kong 547
Jacksonville 519
San Jose 464
Ann Arbor 460
Seattle 449
Wilmington 433
Cambridge 418
Dearborn 317
Nyköping 264
Los Angeles 224
London 203
Beijing 184
The Dalles 184
Council Bluffs 153
Seoul 150
Buffalo 138
Ho Chi Minh City 125
Hanoi 105
San Diego 102
Des Moines 94
Munich 91
Sofia 87
Princeton 86
Bremen 83
Izmir 83
Milan 81
Eugene 79
Helsinki 77
Grafing 72
Lauterbourg 71
Chicago 70
New York 64
Modena 61
Montréal 61
Moscow 43
Mcallen 40
Philadelphia 39
São Paulo 36
Redwood City 32
Columbus 29
Salt Lake City 29
Orem 28
Washington 26
Shanghai 25
Dallas 23
Frankfurt am Main 22
Auburn Hills 19
Mexico City 19
Tampa 19
Tokyo 19
Da Nang 18
Dublin 18
Guangzhou 18
Haiphong 18
Kent 18
Montreal 16
Norwalk 16
Boardman 15
Nanjing 15
Toronto 15
Atlanta 14
Warsaw 14
Brooklyn 13
Brussels 13
Verona 13
Brantford 12
Chennai 12
Denver 12
Miano 12
San Francisco 12
Belo Horizonte 11
Bologna 11
Elk Grove Village 11
Jakarta 11
Jinan 11
Naples 11
Rio de Janeiro 11
Rome 11
Amsterdam 10
Bolzano 10
Boston 10
Taipei 10
Turku 10
Brasília 9
Campinas 9
Dhaka 9
Falls Church 9
Hounslow 9
Kunming 9
Solihull 9
Baghdad 8
Totale 16.996
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Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 473
Evolution of defect profiles in He-implanted silicon studied by slow positrons 423
Thermal desorption spectra from cavities in helium-implanted silicon 377
Helium-implanted silicon: A study of bubble precursors 369
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 343
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 339
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 335
Dilute NiPt alloy interactions with Si 330
Damage evolution in helium-hydrogen co-implanted (100) silicon 324
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 324
Copper–titanium thin film interaction 324
Hydrogen and helium bubbles in silicon 320
Transmission electron microscopy study of helium implanted silicon 320
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 317
Bandgap widening in quantum sieves 316
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 315
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 312
A fast technique for the quantitative analysis of channeling RBS spectra 310
Visible luminescence from silicon by hydrogen implantation and annealing treatments 309
Helium in silicon: Thermal-desorption investigation of bubble precursors 309
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 305
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 304
Hydrogen determination in Si-rich oxide thin films 301
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 299
Hydrogen precipitation in highly oversaturated single-crystalline silicon 293
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 292
DLTS and EPR study of defects in H implanted silicon 290
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 290
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 289
High-dose helium-implanted single-crystal silicon: Annealing behavior 289
Electronic properties of Silicon - transition metal interface compounds 282
Infrared light emission due to radiation damage in crystalline silicon 278
Processing high-quality silicon for microstrip detectors 278
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 278
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 276
Transmission Electron Microscopy study of Helium Implanted Silicon 275
Visible photoluminescence from He‐implanted silicon 275
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 274
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 270
AES Study of Room Temperature Oxygen Interaction with Near Noble Metal-Silicon Compounds Surface 269
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 269
Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy 268
Phase formations in Co-Silicon system 268
Using evidence from nanocavities to assess the vibrational properties of external surfaces 268
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 266
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 265
Radiation enhanced transport of hydrogen in SiO2 265
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 263
GISAXS study of structural relaxation in amorphous silicon 261
Visible light emission from silicon implanted and annealed SiO2 layers 260
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 260
Low temperature dopant activation of BF2 implanted silicon 259
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 252
X-ray reflectivity study of hydrogen implanted silicon 250
Hydrogen injection and retention in nanocavities of single-crystalline silicon 249
Characterization of Bioacceptable Carbon Materials 249
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 248
GISAXS study of defects in He implanted silicon 243
Capire la Time-Resolved Reflectivity: una tecnica di analisi basata sull’interferenza da lamina sottile 236
ELECTRICAL STUDIES ON H-IMPLANTED SILICON 235
Physics and Art: introducing light-matter interaction by looking at famous paintings 234
ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2 232
ION MIXING IN SI/GE LAYERED STRUCTURES 231
A simple on-line system employed in diffraction experiments 230
Rutherford Backscattering Spectrometry: a technique worth introducing into pedagogy 229
Costruire i diagrammi di fase dai dati sperimentali: una proposta didattica 227
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 226
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 225
EPR study of He-implanted Si 224
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION 217
Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing 206
A Problem for educational research: The updating of the curriculum 205
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 203
Understand Time Resolved Reflectivity by simple experiments 189
Interdiffusion of thin chromium and gold films deposited on silicon 187
Materials science and optics in the arts: case studies to improve physics education 176
Tecniche di analisi di fisica della materia e proposte didattiche dai laboratori MASEM: formare gli insegnanti al raccordo tra fisica classica e moderna 170
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 168
Process of manufacturing wafers usable in the semiconductor industry 160
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 157
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 155
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 144
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 139
High-resolution X-ray diffraction of silicon-on-nothing 101
Initial reactions in Ti-Si(Mo) bilayers 75
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
Thermal stability of low dielectric constant porous silica films 1
Deposition temperature determination of HDPCVD silicon dioxide films 1
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
Initial reactions in Ti-Si bilayers: New indications from in situ measurements 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
HYDROGEN IN SILICON - STATE, REACTIVITY AND EVOLUTION AFTER ION-IMPLANTATION 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
SNMS STUDIES OF ULSI GATE INTERCONNECTION STRUCTURES 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
GAAS AND INP SURFACE BEHAVIOR UNDER ION-BOMBARDMENT, ALKALI DEPOSITION AND OXYGEN EXPOSURE 1
DEUTERIUM-DEUTERIUM FUSION BY AN ACTIVATED PRECURSOR 1
STUDY OF THE SP2-TO-SP3 RATIO OF DUAL-ION-BEAM SPUTTERED HYDROGENATED AMORPHOUS-CARBON FILMS 1
Totale 22.356
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Categoria #
all - tutte 83.834
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 83.834
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.585 61 216 237 93 21 55 177 58 137 96 297 137
2022/20231.628 156 192 104 119 256 304 10 140 188 9 57 93
2023/2024813 26 59 36 163 190 41 51 117 11 19 17 83
2024/20253.408 115 26 51 224 679 502 199 252 331 136 433 460
2025/20265.955 340 308 691 516 702 533 729 321 629 522 363 301
2026/2027175 175 0 0 0 0 0 0 0 0 0 0 0
Totale 22.359