OTTAVIANI, Giampiero
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 11.541
EU - Europa 4.878
AS - Asia 4.554
SA - Sud America 461
AF - Africa 86
Continente sconosciuto - Info sul continente non disponibili 9
OC - Oceania 8
Totale 21.537
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 11.369
GB - Regno Unito 2.608
SG - Singapore 1.504
CN - Cina 1.361
HK - Hong Kong 553
SE - Svezia 482
DE - Germania 466
VN - Vietnam 413
BR - Brasile 358
IT - Italia 299
UA - Ucraina 234
RU - Federazione Russa 192
TR - Turchia 176
FI - Finlandia 165
FR - Francia 164
KR - Corea 162
CA - Canada 109
BG - Bulgaria 88
IN - India 76
BD - Bangladesh 59
MX - Messico 41
JP - Giappone 38
AR - Argentina 35
NL - Olanda 30
ID - Indonesia 26
IQ - Iraq 25
AE - Emirati Arabi Uniti 23
PL - Polonia 21
ZA - Sudafrica 21
IE - Irlanda 19
PH - Filippine 17
CO - Colombia 16
ES - Italia 16
BE - Belgio 15
MA - Marocco 15
PK - Pakistan 15
CH - Svizzera 14
EC - Ecuador 14
MY - Malesia 14
TW - Taiwan 14
AT - Austria 11
CL - Cile 11
DZ - Algeria 11
HR - Croazia 11
KE - Kenya 9
TN - Tunisia 9
UZ - Uzbekistan 9
VE - Venezuela 9
EU - Europa 8
PE - Perù 8
SA - Arabia Saudita 8
BY - Bielorussia 7
AU - Australia 6
EG - Egitto 6
LT - Lituania 6
AZ - Azerbaigian 5
JO - Giordania 5
LB - Libano 5
PA - Panama 5
RS - Serbia 5
BO - Bolivia 4
JM - Giamaica 4
KZ - Kazakistan 4
NP - Nepal 4
OM - Oman 4
PY - Paraguay 4
RO - Romania 4
BH - Bahrain 3
CY - Cipro 3
DK - Danimarca 3
DO - Repubblica Dominicana 3
EE - Estonia 3
GE - Georgia 3
HU - Ungheria 3
IL - Israele 3
LV - Lettonia 3
PS - Palestinian Territory 3
SN - Senegal 3
TH - Thailandia 3
CI - Costa d'Avorio 2
ET - Etiopia 2
HN - Honduras 2
IR - Iran 2
KG - Kirghizistan 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
MN - Mongolia 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
AF - Afghanistan, Repubblica islamica di 1
AG - Antigua e Barbuda 1
AM - Armenia 1
AO - Angola 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BQ - ???statistics.table.value.countryCode.BQ??? 1
Totale 21.520
Salva come PNG Salva come JPEG
Città #
Southend 2.166
Fairfield 1.239
Ashburn 1.198
Santa Clara 1.061
Singapore 971
Woodbridge 802
Houston 668
Chandler 593
Hefei 587
Hong Kong 544
Jacksonville 518
Ann Arbor 460
Seattle 445
Wilmington 433
Cambridge 418
San Jose 364
Dearborn 317
Nyköping 264
Los Angeles 211
London 203
The Dalles 184
Beijing 178
Seoul 150
Buffalo 133
Ho Chi Minh City 125
Council Bluffs 117
Hanoi 105
San Diego 102
Des Moines 94
Munich 91
Sofia 87
Princeton 86
Bremen 83
Izmir 83
Eugene 79
Helsinki 77
Grafing 72
Lauterbourg 71
Chicago 69
Modena 61
Montréal 61
Milan 56
New York 55
Moscow 43
Mcallen 40
Philadelphia 38
São Paulo 35
Redwood City 32
Columbus 29
Salt Lake City 29
Orem 28
Washington 25
Shanghai 24
Frankfurt am Main 22
Auburn Hills 19
Tokyo 19
Da Nang 18
Dublin 18
Guangzhou 18
Haiphong 18
Kent 18
Tampa 18
Dallas 17
Mexico City 16
Norwalk 16
Nanjing 15
Atlanta 14
Boardman 14
Montreal 14
Brooklyn 13
Brussels 13
Verona 13
Warsaw 13
Brantford 12
Chennai 12
Belo Horizonte 11
Denver 11
Elk Grove Village 11
Jakarta 11
Jinan 11
Amsterdam 10
Bologna 10
Boston 10
Miano 10
Rio de Janeiro 10
San Francisco 10
Taipei 10
Turku 10
Brasília 9
Campinas 9
Dhaka 9
Falls Church 9
Hounslow 9
Kunming 9
Rome 9
Toronto 9
Baghdad 8
Dubai 8
Kilburn 8
Nairobi 8
Totale 16.593
Salva come PNG Salva come JPEG
Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 447
Evolution of defect profiles in He-implanted silicon studied by slow positrons 412
Thermal desorption spectra from cavities in helium-implanted silicon 371
Helium-implanted silicon: A study of bubble precursors 358
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 333
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 333
Dilute NiPt alloy interactions with Si 323
Damage evolution in helium-hydrogen co-implanted (100) silicon 320
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 320
Transmission electron microscopy study of helium implanted silicon 317
Hydrogen and helium bubbles in silicon 316
Copper–titanium thin film interaction 311
Bandgap widening in quantum sieves 310
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 309
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 306
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 305
A fast technique for the quantitative analysis of channeling RBS spectra 302
Visible luminescence from silicon by hydrogen implantation and annealing treatments 302
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 299
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 298
Helium in silicon: Thermal-desorption investigation of bubble precursors 298
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 297
Hydrogen determination in Si-rich oxide thin films 296
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 293
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 286
Hydrogen precipitation in highly oversaturated single-crystalline silicon 285
High-dose helium-implanted single-crystal silicon: Annealing behavior 283
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 283
DLTS and EPR study of defects in H implanted silicon 281
Electronic properties of Silicon - transition metal interface compounds 280
Infrared light emission due to radiation damage in crystalline silicon 276
Processing high-quality silicon for microstrip detectors 275
Transmission Electron Microscopy study of Helium Implanted Silicon 272
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 272
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 270
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 269
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 269
Visible photoluminescence from He‐implanted silicon 264
Phase formations in Co-Silicon system 263
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 262
Radiation enhanced transport of hydrogen in SiO2 261
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 259
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 258
Visible light emission from silicon implanted and annealed SiO2 layers 257
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 257
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 257
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 256
Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy 252
Using evidence from nanocavities to assess the vibrational properties of external surfaces 252
GISAXS study of structural relaxation in amorphous silicon 251
AES Study of Room Temperature Oxygen Interaction with Near Noble Metal-Silicon Compounds Surface 247
Characterization of Bioacceptable Carbon Materials 246
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 245
Hydrogen injection and retention in nanocavities of single-crystalline silicon 245
Low temperature dopant activation of BF2 implanted silicon 244
X-ray reflectivity study of hydrogen implanted silicon 238
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 237
Capire la Time-Resolved Reflectivity: una tecnica di analisi basata sull’interferenza da lamina sottile 232
ION MIXING IN SI/GE LAYERED STRUCTURES 230
A simple on-line system employed in diffraction experiments 225
ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2 224
Costruire i diagrammi di fase dai dati sperimentali: una proposta didattica 222
Rutherford Backscattering Spectrometry: a technique worth introducing into pedagogy 222
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 220
EPR study of He-implanted Si 220
GISAXS study of defects in He implanted silicon 217
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 217
Physics and Art: introducing light-matter interaction by looking at famous paintings 216
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION 213
A Problem for educational research: The updating of the curriculum 204
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 200
Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing 190
Understand Time Resolved Reflectivity by simple experiments 183
Interdiffusion of thin chromium and gold films deposited on silicon 182
ELECTRICAL STUDIES ON H-IMPLANTED SILICON 176
Materials science and optics in the arts: case studies to improve physics education 172
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 165
Tecniche di analisi di fisica della materia e proposte didattiche dai laboratori MASEM: formare gli insegnanti al raccordo tra fisica classica e moderna 164
Process of manufacturing wafers usable in the semiconductor industry 150
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 150
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 148
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 139
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 136
High-resolution X-ray diffraction of silicon-on-nothing 94
Initial reactions in Ti-Si(Mo) bilayers 59
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
Thermal stability of low dielectric constant porous silica films 1
Deposition temperature determination of HDPCVD silicon dioxide films 1
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
Initial reactions in Ti-Si bilayers: New indications from in situ measurements 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
HYDROGEN IN SILICON - STATE, REACTIVITY AND EVOLUTION AFTER ION-IMPLANTATION 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
SNMS STUDIES OF ULSI GATE INTERCONNECTION STRUCTURES 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
GAAS AND INP SURFACE BEHAVIOR UNDER ION-BOMBARDMENT, ALKALI DEPOSITION AND OXYGEN EXPOSURE 1
DEUTERIUM-DEUTERIUM FUSION BY AN ACTIVATED PRECURSOR 1
STUDY OF THE SP2-TO-SP3 RATIO OF DUAL-ION-BEAM SPUTTERED HYDROGENATED AMORPHOUS-CARBON FILMS 1
Totale 21.614
Salva come PNG Salva come JPEG
Categoria #
all - tutte 78.361
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 78.361
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021321 0 0 0 0 0 0 0 0 0 0 229 92
2021/20221.585 61 216 237 93 21 55 177 58 137 96 297 137
2022/20231.628 156 192 104 119 256 304 10 140 188 9 57 93
2023/2024813 26 59 36 163 190 41 51 117 11 19 17 83
2024/20253.408 115 26 51 224 679 502 199 252 331 136 433 460
2025/20265.388 340 308 691 516 702 533 729 321 629 522 97 0
Totale 21.617