OTTAVIANI, Giampiero
 Distribuzione geografica
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Continente #
NA - Nord America 13.665
EU - Europa 5.078
AS - Asia 4.758
SA - Sud America 491
AF - Africa 98
Continente sconosciuto - Info sul continente non disponibili 89
OC - Oceania 9
Totale 24.188
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Nazione #
US - Stati Uniti d'America 13.371
GB - Regno Unito 2.629
SG - Singapore 1.521
CN - Cina 1.389
HK - Hong Kong 561
SE - Svezia 484
DE - Germania 467
IT - Italia 428
VN - Vietnam 415
BR - Brasile 380
UA - Ucraina 236
RU - Federazione Russa 215
BD - Bangladesh 183
TR - Turchia 176
FR - Francia 172
FI - Finlandia 165
CA - Canada 162
KR - Corea 162
BG - Bulgaria 88
IN - India 76
MX - Messico 47
JP - Giappone 40
AR - Argentina 38
NL - Olanda 34
ID - Indonesia 26
IQ - Iraq 26
AE - Emirati Arabi Uniti 23
PL - Polonia 23
ES - Italia 21
ZA - Sudafrica 21
CR - Costa Rica 19
IE - Irlanda 19
CO - Colombia 18
PH - Filippine 18
TW - Taiwan 18
IL - Israele 17
PK - Pakistan 16
BE - Belgio 15
EC - Ecuador 15
MA - Marocco 15
MY - Malesia 15
CH - Svizzera 14
CL - Cile 12
SC - Seychelles 12
AT - Austria 11
DZ - Algeria 11
HR - Croazia 11
HN - Honduras 10
TT - Trinidad e Tobago 10
VE - Venezuela 10
JM - Giamaica 9
KE - Kenya 9
TN - Tunisia 9
UZ - Uzbekistan 9
EU - Europa 8
PE - Perù 8
SA - Arabia Saudita 8
BY - Bielorussia 7
NI - Nicaragua 7
AU - Australia 6
EG - Egitto 6
LT - Lituania 6
AZ - Azerbaigian 5
GT - Guatemala 5
JO - Giordania 5
LB - Libano 5
PA - Panama 5
PR - Porto Rico 5
RS - Serbia 5
BO - Bolivia 4
EE - Estonia 4
KZ - Kazakistan 4
NP - Nepal 4
OM - Oman 4
PY - Paraguay 4
RO - Romania 4
SV - El Salvador 4
BH - Bahrain 3
CY - Cipro 3
DK - Danimarca 3
DO - Repubblica Dominicana 3
GE - Georgia 3
GP - Guadalupe 3
HU - Ungheria 3
LV - Lettonia 3
NZ - Nuova Zelanda 3
PS - Palestinian Territory 3
PT - Portogallo 3
SN - Senegal 3
TH - Thailandia 3
AM - Armenia 2
BA - Bosnia-Erzegovina 2
CI - Costa d'Avorio 2
ET - Etiopia 2
IR - Iran 2
KG - Kirghizistan 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
MN - Mongolia 2
NG - Nigeria 2
Totale 24.083
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Città #
Southend 2.166
Ashburn 1.913
Fairfield 1.239
Santa Clara 1.134
Singapore 978
Woodbridge 802
Houston 674
Chandler 594
Hefei 587
Hong Kong 551
San Jose 544
Jacksonville 520
Ann Arbor 460
Seattle 449
Wilmington 435
Cambridge 418
Council Bluffs 354
Dearborn 317
Nyköping 264
Los Angeles 235
London 203
Beijing 188
The Dalles 184
Seoul 150
Buffalo 145
Ho Chi Minh City 126
Hanoi 105
San Diego 103
Des Moines 94
Princeton 92
Milan 91
Munich 91
Sofia 87
Bremen 84
Izmir 83
Chicago 82
Eugene 79
Helsinki 77
Grafing 72
Lauterbourg 71
New York 66
Modena 61
Montréal 61
São Paulo 46
Norfolk 45
Moscow 43
Columbus 42
Philadelphia 41
Mcallen 40
Redwood City 32
Orem 30
Salt Lake City 30
Dallas 27
Washington 27
Shanghai 26
Toronto 24
Frankfurt am Main 23
Tampa 21
Tokyo 21
Brooklyn 20
Auburn Hills 19
Denver 19
Dublin 19
Mexico City 19
Montreal 19
Bolzano 18
Da Nang 18
Guangzhou 18
Haiphong 18
Kent 18
Boardman 17
Rome 17
Atlanta 16
Newark 16
Norwalk 16
Phoenix 16
Nanjing 15
San José 15
San Francisco 14
Warsaw 14
Brussels 13
Verona 13
Bologna 12
Brantford 12
Chennai 12
Miano 12
Naples 12
North Bergen 12
Amsterdam 11
Belo Horizonte 11
Boston 11
Elk Grove Village 11
Jakarta 11
Jinan 11
Miami 11
Rio de Janeiro 11
Solihull 11
Charlotte 10
Taipei 10
Turku 10
Totale 18.135
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Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 491
Evolution of defect profiles in He-implanted silicon studied by slow positrons 456
Thermal desorption spectra from cavities in helium-implanted silicon 410
Helium-implanted silicon: A study of bubble precursors 399
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 370
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 369
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 364
Dilute NiPt alloy interactions with Si 361
Damage evolution in helium-hydrogen co-implanted (100) silicon 354
Copper–titanium thin film interaction 349
Hydrogen and helium bubbles in silicon 345
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 345
Helium in silicon: Thermal-desorption investigation of bubble precursors 335
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 335
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 334
A fast technique for the quantitative analysis of channeling RBS spectra 332
Bandgap widening in quantum sieves 332
Transmission electron microscopy study of helium implanted silicon 331
Hydrogen determination in Si-rich oxide thin films 329
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 327
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 324
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 323
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 320
Visible luminescence from silicon by hydrogen implantation and annealing treatments 320
Electronic properties of Silicon - transition metal interface compounds 317
High-dose helium-implanted single-crystal silicon: Annealing behavior 312
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 309
DLTS and EPR study of defects in H implanted silicon 308
Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy 305
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 305
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 303
Hydrogen precipitation in highly oversaturated single-crystalline silicon 301
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 295
Processing high-quality silicon for microstrip detectors 293
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 293
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 293
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 292
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 292
Phase formations in Co-Silicon system 291
Visible photoluminescence from He‐implanted silicon 291
Infrared light emission due to radiation damage in crystalline silicon 290
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 288
Capire la Time-Resolved Reflectivity: una tecnica di analisi basata sull’interferenza da lamina sottile 287
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 287
AES Study of Room Temperature Oxygen Interaction with Near Noble Metal-Silicon Compounds Surface 286
Low temperature dopant activation of BF2 implanted silicon 284
Visible light emission from silicon implanted and annealed SiO2 layers 283
Transmission Electron Microscopy study of Helium Implanted Silicon 283
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 283
Costruire i diagrammi di fase dai dati sperimentali: una proposta didattica 280
Radiation enhanced transport of hydrogen in SiO2 275
Using evidence from nanocavities to assess the vibrational properties of external surfaces 275
ELECTRICAL STUDIES ON H-IMPLANTED SILICON 272
GISAXS study of structural relaxation in amorphous silicon 272
X-ray reflectivity study of hydrogen implanted silicon 271
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 271
Characterization of Bioacceptable Carbon Materials 270
ION MIXING IN SI/GE LAYERED STRUCTURES 268
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 267
ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2 264
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 262
A simple on-line system employed in diffraction experiments 261
Hydrogen injection and retention in nanocavities of single-crystalline silicon 260
GISAXS study of defects in He implanted silicon 258
Physics and Art: introducing light-matter interaction by looking at famous paintings 255
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 250
Rutherford Backscattering Spectrometry: a technique worth introducing into pedagogy 246
EPR study of He-implanted Si 245
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 240
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 237
Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing 235
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION 235
A Problem for educational research: The updating of the curriculum 221
Understand Time Resolved Reflectivity by simple experiments 216
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 215
Interdiffusion of thin chromium and gold films deposited on silicon 206
Materials science and optics in the arts: case studies to improve physics education 191
Tecniche di analisi di fisica della materia e proposte didattiche dai laboratori MASEM: formare gli insegnanti al raccordo tra fisica classica e moderna 185
Process of manufacturing wafers usable in the semiconductor industry 178
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 177
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 171
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 154
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 153
High-resolution X-ray diffraction of silicon-on-nothing 116
Initial reactions in Ti-Si(Mo) bilayers 91
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
Thermal stability of low dielectric constant porous silica films 1
Deposition temperature determination of HDPCVD silicon dioxide films 1
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
Initial reactions in Ti-Si bilayers: New indications from in situ measurements 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
HYDROGEN IN SILICON - STATE, REACTIVITY AND EVOLUTION AFTER ION-IMPLANTATION 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
SNMS STUDIES OF ULSI GATE INTERCONNECTION STRUCTURES 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
GAAS AND INP SURFACE BEHAVIOR UNDER ION-BOMBARDMENT, ALKALI DEPOSITION AND OXYGEN EXPOSURE 1
DEUTERIUM-DEUTERIUM FUSION BY AN ACTIVATED PRECURSOR 1
STUDY OF THE SP2-TO-SP3 RATIO OF DUAL-ION-BEAM SPUTTERED HYDROGENATED AMORPHOUS-CARBON FILMS 1
Totale 24.185
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Categoria #
all - tutte 90.673
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 90.673
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022978 0 0 0 0 21 55 177 58 137 96 297 137
2022/20231.628 156 192 104 119 256 304 10 140 188 9 57 93
2023/2024813 26 59 36 163 190 41 51 117 11 19 17 83
2024/20253.408 115 26 51 224 679 502 199 252 331 136 433 460
2025/20265.955 340 308 691 516 702 533 729 321 629 522 363 301
2026/20272.004 178 376 528 738 184 0 0 0 0 0 0 0
Totale 24.188