OTTAVIANI, Giampiero
 Distribuzione geografica
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Continente #
NA - Nord America 10.590
EU - Europa 4.586
AS - Asia 3.633
SA - Sud America 326
AF - Africa 41
Continente sconosciuto - Info sul continente non disponibili 9
OC - Oceania 6
Totale 19.191
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Nazione #
US - Stati Uniti d'America 10.468
GB - Regno Unito 2.591
CN - Cina 1.311
SG - Singapore 1.218
HK - Hong Kong 497
SE - Svezia 482
DE - Germania 446
BR - Brasile 279
IT - Italia 222
UA - Ucraina 222
RU - Federazione Russa 187
TR - Turchia 165
VN - Vietnam 142
KR - Corea 136
FI - Finlandia 132
BG - Bulgaria 88
CA - Canada 88
FR - Francia 74
BD - Bangladesh 26
IN - India 26
NL - Olanda 23
AR - Argentina 22
MX - Messico 19
ID - Indonesia 18
JP - Giappone 18
BE - Belgio 15
IE - Irlanda 15
PL - Polonia 15
CH - Svizzera 14
ES - Italia 14
HR - Croazia 11
IQ - Iraq 11
ZA - Sudafrica 11
TW - Taiwan 10
AT - Austria 9
EU - Europa 8
MA - Marocco 8
AE - Emirati Arabi Uniti 7
CO - Colombia 6
MY - Malesia 6
EG - Egitto 5
KE - Kenya 5
LT - Lituania 5
AU - Australia 4
CL - Cile 4
DZ - Algeria 4
PA - Panama 4
PE - Perù 4
RO - Romania 4
UZ - Uzbekistan 4
BO - Bolivia 3
BY - Bielorussia 3
DO - Repubblica Dominicana 3
EC - Ecuador 3
GE - Georgia 3
JM - Giamaica 3
KZ - Kazakistan 3
LV - Lettonia 3
PH - Filippine 3
SA - Arabia Saudita 3
SN - Senegal 3
VE - Venezuela 3
CY - Cipro 2
DK - Danimarca 2
HN - Honduras 2
HU - Ungheria 2
IL - Israele 2
IR - Iran 2
JO - Giordania 2
KG - Kirghizistan 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
NG - Nigeria 2
NP - Nepal 2
NZ - Nuova Zelanda 2
PK - Pakistan 2
PS - Palestinian Territory 2
RS - Serbia 2
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BQ - ???statistics.table.value.countryCode.BQ??? 1
DJ - Gibuti 1
EE - Estonia 1
GT - Guatemala 1
OM - Oman 1
PT - Portogallo 1
PY - Paraguay 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
UG - Uganda 1
UY - Uruguay 1
Totale 19.191
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Città #
Southend 2.166
Fairfield 1.239
Santa Clara 1.044
Ashburn 917
Woodbridge 802
Singapore 778
Houston 667
Chandler 593
Hefei 587
Jacksonville 518
Hong Kong 492
Ann Arbor 460
Seattle 444
Wilmington 433
Cambridge 418
Dearborn 317
Nyköping 264
Los Angeles 204
London 202
Beijing 148
Buffalo 132
Seoul 128
Council Bluffs 112
San Diego 102
The Dalles 96
Des Moines 94
Munich 91
Sofia 87
Princeton 86
Bremen 83
Izmir 81
Eugene 79
Grafing 72
Chicago 66
Modena 61
Montréal 61
Ho Chi Minh City 50
New York 48
Helsinki 44
Moscow 42
Mcallen 40
Philadelphia 38
Redwood City 32
Milan 30
Columbus 29
Hanoi 28
Salt Lake City 28
São Paulo 28
Shanghai 24
San Jose 23
Auburn Hills 19
Kent 18
Tampa 18
Guangzhou 17
Norwalk 16
Orem 16
Frankfurt am Main 15
Nanjing 15
Boardman 14
Dallas 14
Dublin 14
Tokyo 14
Atlanta 13
Brooklyn 13
Brussels 13
Montreal 13
Verona 13
Denver 11
Elk Grove Village 11
Jinan 11
Warsaw 11
Belo Horizonte 10
Boston 10
Jakarta 10
Taipei 10
Turku 10
Bologna 9
Falls Church 9
Hounslow 9
Kunming 9
Campinas 8
Da Nang 8
Kilburn 8
Padova 8
Indiana 7
Lancaster 7
Mexico City 7
Miami 7
Newark 7
Phoenix 7
Rio de Janeiro 7
San Francisco 7
San Mateo 7
Sterling 7
Stockholm 7
Vienna 7
Xiamen 7
Charlotte 6
Chengdu 6
Chennai 6
Totale 15.134
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Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 425
Evolution of defect profiles in He-implanted silicon studied by slow positrons 362
Thermal desorption spectra from cavities in helium-implanted silicon 315
Helium-implanted silicon: A study of bubble precursors 307
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 297
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 295
Visible luminescence from silicon by hydrogen implantation and annealing treatments 288
Bandgap widening in quantum sieves 286
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 282
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 281
Transmission electron microscopy study of helium implanted silicon 278
A fast technique for the quantitative analysis of channeling RBS spectra 277
Damage evolution in helium-hydrogen co-implanted (100) silicon 276
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 276
Dilute NiPt alloy interactions with Si 276
Helium in silicon: Thermal-desorption investigation of bubble precursors 275
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 272
Hydrogen and helium bubbles in silicon 270
Hydrogen determination in Si-rich oxide thin films 268
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 266
High-dose helium-implanted single-crystal silicon: Annealing behavior 264
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 263
Copper–titanium thin film interaction 261
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 260
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 259
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 258
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 257
Infrared light emission due to radiation damage in crystalline silicon 254
DLTS and EPR study of defects in H implanted silicon 253
Processing high-quality silicon for microstrip detectors 249
Hydrogen precipitation in highly oversaturated single-crystalline silicon 249
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 249
Electronic properties of Silicon - transition metal interface compounds 247
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 247
Transmission Electron Microscopy study of Helium Implanted Silicon 246
Visible photoluminescence from He‐implanted silicon 245
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 244
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 240
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 238
Phase formations in Co-Silicon system 238
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 237
Radiation enhanced transport of hydrogen in SiO2 237
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 235
Using evidence from nanocavities to assess the vibrational properties of external surfaces 235
Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy 228
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 227
Hydrogen injection and retention in nanocavities of single-crystalline silicon 226
Visible light emission from silicon implanted and annealed SiO2 layers 221
Characterization of Bioacceptable Carbon Materials 221
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 220
X-ray reflectivity study of hydrogen implanted silicon 220
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 219
GISAXS study of structural relaxation in amorphous silicon 219
Low temperature dopant activation of BF2 implanted silicon 218
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 218
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 214
ION MIXING IN SI/GE LAYERED STRUCTURES 211
ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2 207
AES Study of Room Temperature Oxygen Interaction with Near Noble Metal-Silicon Compounds Surface 205
Capire la Time-Resolved Reflectivity: una tecnica di analisi basata sull’interferenza da lamina sottile 203
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION 202
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 200
A simple on-line system employed in diffraction experiments 199
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 199
Costruire i diagrammi di fase dai dati sperimentali: una proposta didattica 198
GISAXS study of defects in He implanted silicon 197
EPR study of He-implanted Si 196
Rutherford Backscattering Spectrometry: a technique worth introducing into pedagogy 191
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 186
Physics and Art: introducing light-matter interaction by looking at famous paintings 182
A Problem for educational research: The updating of the curriculum 175
Understand Time Resolved Reflectivity by simple experiments 166
Interdiffusion of thin chromium and gold films deposited on silicon 154
Materials science and optics in the arts: case studies to improve physics education 152
Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing 150
Tecniche di analisi di fisica della materia e proposte didattiche dai laboratori MASEM: formare gli insegnanti al raccordo tra fisica classica e moderna 147
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 140
ELECTRICAL STUDIES ON H-IMPLANTED SILICON 134
Process of manufacturing wafers usable in the semiconductor industry 133
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 133
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 133
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 129
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 124
High-resolution X-ray diffraction of silicon-on-nothing 76
Initial reactions in Ti-Si(Mo) bilayers 42
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
Thermal stability of low dielectric constant porous silica films 1
Deposition temperature determination of HDPCVD silicon dioxide films 1
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
Initial reactions in Ti-Si bilayers: New indications from in situ measurements 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
HYDROGEN IN SILICON - STATE, REACTIVITY AND EVOLUTION AFTER ION-IMPLANTATION 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
SNMS STUDIES OF ULSI GATE INTERCONNECTION STRUCTURES 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
GAAS AND INP SURFACE BEHAVIOR UNDER ION-BOMBARDMENT, ALKALI DEPOSITION AND OXYGEN EXPOSURE 1
DEUTERIUM-DEUTERIUM FUSION BY AN ACTIVATED PRECURSOR 1
STUDY OF THE SP2-TO-SP3 RATIO OF DUAL-ION-BEAM SPUTTERED HYDROGENATED AMORPHOUS-CARBON FILMS 1
Totale 19.268
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Categoria #
all - tutte 73.643
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 73.643
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.475 0 0 0 0 0 279 174 216 83 402 229 92
2021/20221.585 61 216 237 93 21 55 177 58 137 96 297 137
2022/20231.628 156 192 104 119 256 304 10 140 188 9 57 93
2023/2024813 26 59 36 163 190 41 51 117 11 19 17 83
2024/20253.408 115 26 51 224 679 502 199 252 331 136 433 460
2025/20263.042 340 308 691 516 702 485 0 0 0 0 0 0
Totale 19.271