MAGRI, Rita
 Distribuzione geografica
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Continente #
NA - Nord America 16.509
AS - Asia 6.621
EU - Europa 5.261
SA - Sud America 753
Continente sconosciuto - Info sul continente non disponibili 155
AF - Africa 122
OC - Oceania 13
Totale 29.434
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Nazione #
US - Stati Uniti d'America 16.205
CN - Cina 1.974
SG - Singapore 1.937
GB - Regno Unito 1.911
IT - Italia 786
HK - Hong Kong 756
SE - Svezia 739
VN - Vietnam 591
BR - Brasile 580
DE - Germania 411
UA - Ucraina 297
RU - Federazione Russa 295
KR - Corea 274
TR - Turchia 260
BD - Bangladesh 237
FI - Finlandia 228
FR - Francia 184
IN - India 144
CA - Canada 136
BG - Bulgaria 120
ID - Indonesia 56
MX - Messico 55
AR - Argentina 52
JP - Giappone 50
ZA - Sudafrica 43
IQ - Iraq 41
AE - Emirati Arabi Uniti 39
NL - Olanda 36
IE - Irlanda 35
ES - Italia 34
PK - Pakistan 34
PL - Polonia 31
EC - Ecuador 28
LT - Lituania 28
BZ - Belize 27
CO - Colombia 27
BE - Belgio 25
IR - Iran 25
UZ - Uzbekistan 24
PH - Filippine 22
MA - Marocco 21
CL - Cile 20
CR - Costa Rica 19
VE - Venezuela 19
SA - Arabia Saudita 18
JM - Giamaica 17
MY - Malesia 17
RO - Romania 17
IL - Israele 14
CZ - Repubblica Ceca 13
JO - Giordania 12
AU - Australia 11
AZ - Azerbaigian 11
KZ - Kazakistan 11
TH - Thailandia 11
HN - Honduras 10
KE - Kenya 10
TN - Tunisia 10
TW - Taiwan 9
DK - Danimarca 8
PR - Porto Rico 8
PY - Paraguay 8
SC - Seychelles 8
AT - Austria 7
CH - Svizzera 7
EG - Egitto 7
GT - Guatemala 7
OM - Oman 7
PE - Perù 7
PT - Portogallo 7
UY - Uruguay 7
AL - Albania 6
DZ - Algeria 6
EE - Estonia 6
NI - Nicaragua 6
GE - Georgia 5
GR - Grecia 5
LK - Sri Lanka 5
SV - El Salvador 5
AM - Armenia 4
BH - Bahrain 4
BO - Bolivia 4
HU - Ungheria 4
KG - Kirghizistan 4
LV - Lettonia 4
NG - Nigeria 4
NP - Nepal 4
RS - Serbia 4
BY - Bielorussia 3
CW - ???statistics.table.value.countryCode.CW??? 3
DO - Repubblica Dominicana 3
LA - Repubblica Popolare Democratica del Laos 3
LB - Libano 3
MD - Moldavia 3
SY - Repubblica araba siriana 3
TT - Trinidad e Tobago 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
CY - Cipro 2
ET - Etiopia 2
Totale 29.247
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Città #
Ashburn 1.849
Fairfield 1.503
Santa Clara 1.438
Southend 1.384
Singapore 1.255
Woodbridge 1.000
Chandler 810
Hefei 799
Houston 775
San Jose 758
Hong Kong 739
Jacksonville 603
Seattle 583
Wilmington 514
Cambridge 466
Ann Arbor 432
Dearborn 395
Council Bluffs 382
Nyköping 356
Beijing 314
London 287
Los Angeles 222
Seoul 207
Modena 196
Ho Chi Minh City 181
Chicago 173
The Dalles 170
Izmir 140
Hanoi 138
San Diego 132
New York 130
Helsinki 121
Dallas 118
Sofia 115
Princeton 113
Milan 112
Buffalo 97
Eugene 97
Lauterbourg 86
Des Moines 77
Salt Lake City 65
Moscow 62
Columbus 61
São Paulo 55
Bremen 53
Shanghai 48
Atlanta 41
Newark 41
Munich 39
San Mateo 38
Toronto 38
Bologna 36
Washington 35
Jinju 34
Brooklyn 32
Norfolk 32
Orem 32
Jakarta 31
Tokyo 31
Frankfurt am Main 30
Kent 30
Boardman 29
Dublin 29
Kunming 29
Philadelphia 28
Da Nang 27
Phoenix 27
Montreal 26
Belize City 25
Johannesburg 25
Tampa 25
Brussels 24
Hillsboro 24
Nanjing 24
Redwood City 24
Haiphong 23
Reggio Emilia 22
Tashkent 22
Warsaw 22
Leawood 21
Mumbai 21
Rio de Janeiro 21
Rome 21
San Francisco 21
Elk Grove Village 20
Miano 20
Saint Augustine 20
Norwalk 18
Denver 17
Mexico City 17
Biên Hòa 16
Hải Dương 16
Detroit 15
Manchester 15
San José 15
Turku 15
Wuhan 15
Chennai 14
Guangzhou 14
Sterling 14
Totale 20.952
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Nome #
Metal-support interaction in catalysis: The influence of the morphology of a nano-oxide domain on catalytic activity 406
Adsorption of Indium on an InAs wetting layer deposited on the GaAs(001) surface 376
Codoping goes Nano: Structural and Optical Properties of Boron and Phosphorus Codoped Silicon Nanocrystals 362
H2 Dissociation on Noble Metal Single Atom Catalysts Adsorbed on and Doped into CeO2 (111) 362
Anticrossing and coupling of light-hole and heavy-hole states in (001) GaAs/AlxGa1-xAs heterostructures 351
Ab-initio investigation of the polarization anisotropy of the optical absorption in (InGa)As-InP superlattices 348
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 343
Surface and confinement effects on the optical and structural properties of silicon nanocrystals 343
Attractive interactions between like-oriented surface steps from an ab initio perspective: Role of the elastic and electrostatic contributions 341
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 334
Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties 320
Si and Ge based metallic core/shell nanowires for nano-electronic device applications 318
Step energy and step interactions on the reconstructed GaAs(001) surface 317
DIAMOND-LIKE ORDER IN ZINCBLENDE COMPOUNDS 316
First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping 316
Doping in silicon nanocrystals 314
Spontaneous Formation of Surface Antisite Defects in the Stabilization of the Sb-Rich GaSb(001) Surface 314
Theory of optical properties of segregated InAs/GaSb superlattices 313
The electronic and optical properties of silicon nanoclusters: absorption and emission 313
Doping in silicon nanostructures 313
Effects of wetting layer structure on surface phase stability and on indium surface diffusion 312
Indium surface diffusion on InAs (2x4) reconstructed wetting layers on GaAs(001) 311
Role of surface passivation and doping in silicon nanocrystals 309
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 309
Reduction and Oxidation of Maghemite (001) Surfaces: The Role of Iron Vacancies 305
Formation energies of silicon nanocrystals: role of dimension and passivation 304
In adsorption and diffusion on in-rich (2×4) reconstructed InGaAs surfaces on GaAs(001) 304
First-principles study of Sb-stabilized GaSb(001) surface reconstructions 298
Structural stability of clean GaAs nanowires grown along the [111] direction 296
Gain theory and models in silicon nanostructures 295
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 293
Insights into the stability and reactivity of lithiated Si-binder interfaces for next generation lithium-ion batteries 291
Role of surface structural motifs on the stability and reflectance anisotropy spectra of Sb-rich GaSb(001) reconstructions 290
Anticrossing semiconducting band gap in nominally semimetallic InAs/GaSb superlattices 289
Electronic excitations in solids: Density functional and Green's function theory 287
Gain theory and models in silicon nanostructures 286
The electronic and optical properties of InGaAs/InP and InAlAs/InP superlattices 286
Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices 285
Surface Effects on the Atomic and Electronic Structure of Unpassivated GaAs Nanowires 284
THEORETICAL STUDIES OF ABSORPTION, EMISSION AND GAIN IN SILICON NANOSTRUCTURES 284
Electronic and optical properties of silicon nanocrystals: structural effects 280
First-principles study of n- and p-doped silicon nanoclusters 280
Formation energies of silicon nanocrystals: role of dimension and passivation 280
A first-principles study of self-healing binders for next-generation Si-based lithium-ion batteries 276
Role of interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2 275
Methane Activation on Metal-Doped (111) and (100) Ceria Surfaces with Charge-Compensating Oxygen Vacancies 274
Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties 273
Structural stability and valence charge density in (GaAs)1(InAs)1 (111) superlattice 272
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 272
Understanding doping in silicon nanostructures 271
Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots 271
Electronic band structure of the (GaAs)1/(InAs)1 (111) superlattice 270
Predicting interband transition energies for InAs/GaSb superlattices using the empirical pseudopotential method 269
Surface compositional mapping of self-assembled InAs/GaAs quantum rings 268
Reduction Properties of (001) Maghemite Surfaces 268
Optical properties of silicon nanocrystallites in SiO2 matrix:Crystalline vs. amorphous case 267
Characterization of Bioacceptable Carbon Materials 265
Effects of interfacial atomic segregation on optical properties of InAs/GaSb superlattices 265
Real-space description of semiconducting band gaps in substitutional systems 264
Kinetically driven selective growth of InAs quantum dots on GaAs 261
Predicting structural energies of atomic lattices 260
Structural and electronic properties of Sb islands on GaAs (110) 259
Silicon nanocrystallites in a SiO2 matrix: Role of disorder and size 259
Band folding, strain, confinement, and surface relaxation effects on the electronic structure of GaAs and GaP: from bulk to nanowires 258
IN PLANE ANISOTROPY OF THE OPTICAL PROPERTIES OF (In0.5Ga0.5As)n/(InP)n SUPERLATTICES. 256
Study of arsenic for antimony exchange at the Sb-stabilized GaSb(0 0 1) surface 256
InAs Epitaxy on GaAs(001): A Model Case of Strain-Driven Self-Assembling of Qunatum Dots 256
Surface compositional profiles of self-assembled InAs/GaAs quantum rings 255
P and B single- and co-doped silicon nanocrystals: Formation and activation energies, electronic and optical properties 255
ROLE OF SYMMETRY REDUCTION IN THE POLARIZATION DEPENDENCE OF THE OPTICAL ABSORPTION IN NON-COMMON ATOM SUPERLATTICES 252
Si nanostructures embedded in SiO[sub 2]: electronic and optical properties 252
Will silicon be the photonics material of the third millennium? 248
Search for stable configuration of (GaAs)1(InAs)1 (111) superlattice 248
Manipulating surface diffusion and elastic interactions to obtain quantum dot multilayer arrangements over different length scales 247
Electronic properties of Sb deposited on GaAs(110) in the submonolayer coverage regime 244
Density functional calculations of the structural, electronic and optical properties of semiconductor nanostructures 244
In adatom diffusion on InxGa1-xAs/GaAs(001): effects of strain, reconstruction and composition 244
Reduced cerium configurations in CeO2/Ag inverse catalysis 243
The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs 241
Evolution of the band-gap and band-edge energies of the lattice-matched GaInAsSb/GaSb and GaInAsSb/InAs alloys as a function of composition 240
Giant birefringence in zinc-blende-based artificial semiconductors 239
Surface effects in the electronic properties of YBa2Cu3O7 239
Experimental and theoretical joint study on the electronic and structural properties of silicon nanocrystals embedded in SiO2: active role of the interface region 238
Theory of optical properties of 6.1 Å III-V superlattices: The role of the interfaces 235
Pseudopotential calculations of band gaps and band edges of short-period (InAs)n (GaSb)m superlattices with different substrates, layer orientations, and interfacial bonds 234
Structural and Dynamic Characterization of Li-Ionic Liquid Electrolyte Solutions for Application in Li-Ion Batteries: A Molecular Dynamics Approach 233
ORDERING IN BXC1-X COMPOUNDS WITH THE GRAPHITE STRUCTURE 233
Stress-determined nucleation sites above GaAs-capped arrays of InAs quantum dots 231
Surface Reactivity of Ag-Modified Ceria to Hydrogen: A Combined Experimental and Theoretical Investigation 229
Selective growth of InAs quantum dots on GaAs driven by as kinetics 228
Strain-engineered arrays of InAs quantum dots on GaAs(001): Epitaxial growth and modeling 221
Excitons in Silicon Nanocrystallites: the Nature of Luminescence 220
Segregation effects on the optical properties of (InAs)/(GaSb) superlattices 219
Ground state structures and the random state energy of the Madelung lattice 217
Electronic structure and density of states of the random Al0.5Ga0.5As, Ga0.5As0.5P, and Ga0.5In0.5As semiconductor alloys 216
Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation 215
Thermodynamic instability of ordered (001) GaAlAs in bulk form 211
The structural, electronic and optical properties of Si nanoclusters: effects of size, doping and surface passivation 210
Structure and optical properties of the Sb-stabilized GaSb(001) surface 209
Optical properties of GaSb(001)--c(2x6): the role of surface antisite defects 207
Totale 27.560
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Categoria #
all - tutte 113.427
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 113.427
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.354 0 0 0 0 39 85 133 92 214 117 463 211
2022/20232.078 227 191 195 159 289 348 37 218 255 12 68 79
2023/20241.102 42 85 83 155 226 58 90 140 38 27 70 88
2024/20254.544 150 60 48 313 940 643 358 321 427 129 524 631
2025/20268.047 529 494 780 871 1.054 680 879 365 686 756 503 450
2026/20272.146 287 397 544 910 8 0 0 0 0 0 0 0
Totale 29.434