MAGRI, Rita
 Distribuzione geografica
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Continente #
NA - Nord America 13.981
AS - Asia 6.295
EU - Europa 4.918
SA - Sud America 729
AF - Africa 114
OC - Oceania 13
Continente sconosciuto - Info sul continente non disponibili 4
Totale 26.054
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Nazione #
US - Stati Uniti d'America 13.805
CN - Cina 1.932
GB - Regno Unito 1.883
SG - Singapore 1.867
HK - Hong Kong 744
SE - Svezia 737
VN - Vietnam 585
BR - Brasile 568
IT - Italia 540
DE - Germania 410
UA - Ucraina 289
RU - Federazione Russa 273
KR - Corea 272
TR - Turchia 258
FI - Finlandia 228
FR - Francia 175
IN - India 140
BG - Bulgaria 120
CA - Canada 80
BD - Bangladesh 68
ID - Indonesia 54
AR - Argentina 49
JP - Giappone 48
MX - Messico 45
ZA - Sudafrica 43
IQ - Iraq 40
AE - Emirati Arabi Uniti 38
PK - Pakistan 34
IE - Irlanda 33
NL - Olanda 31
PL - Polonia 29
EC - Ecuador 28
LT - Lituania 28
ES - Italia 26
BZ - Belize 25
IR - Iran 25
BE - Belgio 24
UZ - Uzbekistan 24
PH - Filippine 22
CO - Colombia 21
MA - Marocco 21
CL - Cile 20
SA - Arabia Saudita 18
VE - Venezuela 18
RO - Romania 17
MY - Malesia 15
CZ - Repubblica Ceca 12
JO - Giordania 12
AU - Australia 11
AZ - Azerbaigian 11
KZ - Kazakistan 11
TH - Thailandia 11
KE - Kenya 10
TN - Tunisia 10
TW - Taiwan 9
AT - Austria 7
CH - Svizzera 7
DK - Danimarca 7
EG - Egitto 7
OM - Oman 7
PE - Perù 7
PY - Paraguay 7
UY - Uruguay 7
AL - Albania 6
CR - Costa Rica 6
DZ - Algeria 6
IL - Israele 6
GE - Georgia 5
LK - Sri Lanka 5
PT - Portogallo 5
BH - Bahrain 4
GR - Grecia 4
HN - Honduras 4
HU - Ungheria 4
KG - Kirghizistan 4
LV - Lettonia 4
NG - Nigeria 4
RS - Serbia 4
AM - Armenia 3
BO - Bolivia 3
BY - Bielorussia 3
JM - Giamaica 3
LA - Repubblica Popolare Democratica del Laos 3
LB - Libano 3
MD - Moldavia 3
NP - Nepal 3
SY - Repubblica araba siriana 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
CY - Cipro 2
DO - Repubblica Dominicana 2
EE - Estonia 2
ET - Etiopia 2
MN - Mongolia 2
MU - Mauritius 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
PA - Panama 2
PR - Porto Rico 2
PS - Palestinian Territory 2
Totale 26.027
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Città #
Fairfield 1.503
Southend 1.384
Santa Clara 1.357
Singapore 1.227
Ashburn 1.146
Woodbridge 1.000
Chandler 810
Hefei 799
Houston 769
Hong Kong 727
Jacksonville 601
Seattle 582
Wilmington 513
Cambridge 465
San Jose 447
Ann Arbor 431
Dearborn 395
Nyköping 356
Beijing 297
London 284
Seoul 206
Modena 195
Los Angeles 194
Ho Chi Minh City 178
The Dalles 168
Chicago 162
Izmir 140
Hanoi 136
Council Bluffs 127
Helsinki 121
San Diego 121
Sofia 115
Princeton 113
Eugene 97
Dallas 95
Lauterbourg 86
New York 86
Buffalo 80
Des Moines 76
Salt Lake City 63
Moscow 62
Bremen 53
São Paulo 50
Shanghai 47
Columbus 44
Milan 39
Munich 39
San Mateo 38
Jinju 34
Newark 34
Washington 33
Jakarta 31
Atlanta 30
Frankfurt am Main 30
Kent 30
Kunming 29
Orem 29
Tokyo 29
Toronto 29
Bologna 28
Dublin 28
Da Nang 27
Boardman 26
Belize City 25
Johannesburg 25
Hillsboro 24
Nanjing 24
Redwood City 24
Brussels 23
Haiphong 23
Reggio Emilia 22
Tampa 22
Tashkent 22
Warsaw 22
Leawood 21
Rio de Janeiro 21
Brooklyn 20
Elk Grove Village 20
Mumbai 20
Philadelphia 19
Norwalk 18
San Francisco 17
Biên Hòa 16
Hải Dương 16
Phoenix 16
Montreal 15
Turku 15
Wuhan 15
Chennai 14
Detroit 14
Guangzhou 14
Auburn Hills 13
Augusta 13
Belo Horizonte 13
Jinan 13
Manchester 13
Sterling 13
Ardabil 12
Falls Church 12
New Orleans 12
Totale 19.132
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Nome #
Adsorption of Indium on an InAs wetting layer deposited on the GaAs(001) surface 359
Metal-support interaction in catalysis: The influence of the morphology of a nano-oxide domain on catalytic activity 339
Codoping goes Nano: Structural and Optical Properties of Boron and Phosphorus Codoped Silicon Nanocrystals 331
Anticrossing and coupling of light-hole and heavy-hole states in (001) GaAs/AlxGa1-xAs heterostructures 326
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 318
Attractive interactions between like-oriented surface steps from an ab initio perspective: Role of the elastic and electrostatic contributions 318
Ab-initio investigation of the polarization anisotropy of the optical absorption in (InGa)As-InP superlattices 313
Surface and confinement effects on the optical and structural properties of silicon nanocrystals 309
H2 Dissociation on Noble Metal Single Atom Catalysts Adsorbed on and Doped into CeO2 (111) 307
Doping in silicon nanostructures 292
Step energy and step interactions on the reconstructed GaAs(001) surface 292
Spontaneous Formation of Surface Antisite Defects in the Stabilization of the Sb-Rich GaSb(001) Surface 289
The electronic and optical properties of silicon nanoclusters: absorption and emission 287
Indium surface diffusion on InAs (2x4) reconstructed wetting layers on GaAs(001) 287
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 285
Si and Ge based metallic core/shell nanowires for nano-electronic device applications 284
DIAMOND-LIKE ORDER IN ZINCBLENDE COMPOUNDS 283
Reduction and Oxidation of Maghemite (001) Surfaces: The Role of Iron Vacancies 281
Formation energies of silicon nanocrystals: role of dimension and passivation 280
First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping 279
Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties 278
Doping in silicon nanocrystals 277
In adsorption and diffusion on in-rich (2×4) reconstructed InGaAs surfaces on GaAs(001) 276
Gain theory and models in silicon nanostructures 275
Role of surface passivation and doping in silicon nanocrystals 274
Structural stability of clean GaAs nanowires grown along the [111] direction 273
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 273
First-principles study of Sb-stabilized GaSb(001) surface reconstructions 272
Electronic excitations in solids: Density functional and Green's function theory 270
Anticrossing semiconducting band gap in nominally semimetallic InAs/GaSb superlattices 268
Electronic and optical properties of silicon nanocrystals: structural effects 264
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 263
Theory of optical properties of segregated InAs/GaSb superlattices 262
Surface Effects on the Atomic and Electronic Structure of Unpassivated GaAs Nanowires 262
Effects of wetting layer structure on surface phase stability and on indium surface diffusion 261
THEORETICAL STUDIES OF ABSORPTION, EMISSION AND GAIN IN SILICON NANOSTRUCTURES 260
Gain theory and models in silicon nanostructures 254
Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots 254
Role of surface structural motifs on the stability and reflectance anisotropy spectra of Sb-rich GaSb(001) reconstructions 254
Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties 253
Structural stability and valence charge density in (GaAs)1(InAs)1 (111) superlattice 251
The electronic and optical properties of InGaAs/InP and InAlAs/InP superlattices 250
Insights into the stability and reactivity of lithiated Si-binder interfaces for next generation lithium-ion batteries 246
Formation energies of silicon nanocrystals: role of dimension and passivation 246
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 246
Understanding doping in silicon nanostructures 244
Structural and electronic properties of Sb islands on GaAs (110) 243
Role of interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2 243
Predicting interband transition energies for InAs/GaSb superlattices using the empirical pseudopotential method 242
First-principles study of n- and p-doped silicon nanoclusters 242
Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices 241
Characterization of Bioacceptable Carbon Materials 241
Optical properties of silicon nanocrystallites in SiO2 matrix:Crystalline vs. amorphous case 241
Reduction Properties of (001) Maghemite Surfaces 241
Predicting structural energies of atomic lattices 240
Effects of interfacial atomic segregation on optical properties of InAs/GaSb superlattices 239
Electronic band structure of the (GaAs)1/(InAs)1 (111) superlattice 238
Kinetically driven selective growth of InAs quantum dots on GaAs 238
A first-principles study of self-healing binders for next-generation Si-based lithium-ion batteries 238
Surface compositional mapping of self-assembled InAs/GaAs quantum rings 237
Silicon nanocrystallites in a SiO2 matrix: Role of disorder and size 235
Real-space description of semiconducting band gaps in substitutional systems 234
ROLE OF SYMMETRY REDUCTION IN THE POLARIZATION DEPENDENCE OF THE OPTICAL ABSORPTION IN NON-COMMON ATOM SUPERLATTICES 234
Study of arsenic for antimony exchange at the Sb-stabilized GaSb(0 0 1) surface 233
Si nanostructures embedded in SiO[sub 2]: electronic and optical properties 231
Surface compositional profiles of self-assembled InAs/GaAs quantum rings 231
Electronic properties of Sb deposited on GaAs(110) in the submonolayer coverage regime 230
P and B single- and co-doped silicon nanocrystals: Formation and activation energies, electronic and optical properties 229
Search for stable configuration of (GaAs)1(InAs)1 (111) superlattice 228
IN PLANE ANISOTROPY OF THE OPTICAL PROPERTIES OF (In0.5Ga0.5As)n/(InP)n SUPERLATTICES. 225
Density functional calculations of the structural, electronic and optical properties of semiconductor nanostructures 222
In adatom diffusion on InxGa1-xAs/GaAs(001): effects of strain, reconstruction and composition 222
Reduced cerium configurations in CeO2/Ag inverse catalysis 222
Band folding, strain, confinement, and surface relaxation effects on the electronic structure of GaAs and GaP: from bulk to nanowires 219
Giant birefringence in zinc-blende-based artificial semiconductors 218
Experimental and theoretical joint study on the electronic and structural properties of silicon nanocrystals embedded in SiO2: active role of the interface region 214
Selective growth of InAs quantum dots on GaAs driven by as kinetics 213
InAs Epitaxy on GaAs(001): A Model Case of Strain-Driven Self-Assembling of Qunatum Dots 213
The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs 208
ORDERING IN BXC1-X COMPOUNDS WITH THE GRAPHITE STRUCTURE 207
Evolution of the band-gap and band-edge energies of the lattice-matched GaInAsSb/GaSb and GaInAsSb/InAs alloys as a function of composition 206
Surface Reactivity of Ag-Modified Ceria to Hydrogen: A Combined Experimental and Theoretical Investigation 206
Pseudopotential calculations of band gaps and band edges of short-period (InAs)n (GaSb)m superlattices with different substrates, layer orientations, and interfacial bonds 205
Will silicon be the photonics material of the third millennium? 204
Stress-determined nucleation sites above GaAs-capped arrays of InAs quantum dots 204
Strain-engineered arrays of InAs quantum dots on GaAs(001): Epitaxial growth and modeling 204
Surface effects in the electronic properties of YBa2Cu3O7 200
Excitons in Silicon Nanocrystallites: the Nature of Luminescence 199
Manipulating surface diffusion and elastic interactions to obtain quantum dot multilayer arrangements over different length scales 198
Theory of optical properties of 6.1 Å III-V superlattices: The role of the interfaces 197
Ground state structures and the random state energy of the Madelung lattice 197
Structural and Dynamic Characterization of Li-Ionic Liquid Electrolyte Solutions for Application in Li-Ion Batteries: A Molecular Dynamics Approach 195
Segregation effects on the optical properties of (InAs)/(GaSb) superlattices 193
The structural, electronic and optical properties of Si nanoclusters: effects of size, doping and surface passivation 192
Structure and optical properties of the Sb-stabilized GaSb(001) surface 190
Thermodynamic instability of ordered (001) GaAlAs in bulk form 189
Optical properties of GaSb(001)--c(2x6): the role of surface antisite defects 189
Methane Activation on Metal-Doped (111) and (100) Ceria Surfaces with Charge-Compensating Oxygen Vacancies 189
Electronic structure and density of states of the random Al0.5Ga0.5As, Ga0.5As0.5P, and Ga0.5In0.5As semiconductor alloys 188
Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation 186
Totale 24.628
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Categoria #
all - tutte 98.252
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 98.252
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021775 0 0 0 0 0 0 0 0 0 334 295 146
2021/20222.068 35 249 292 138 39 85 133 92 214 117 463 211
2022/20232.078 227 191 195 159 289 348 37 218 255 12 68 79
2023/20241.102 42 85 83 155 226 58 90 140 38 27 70 88
2024/20254.544 150 60 48 313 940 643 358 321 427 129 524 631
2025/20266.961 529 494 780 871 1.054 680 879 365 686 623 0 0
Totale 26.202