NOBILI, Carlo Emanuele
 Distribuzione geografica
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Continente #
NA - Nord America 3.542
EU - Europa 1.434
AS - Asia 1.228
SA - Sud America 124
AF - Africa 34
Continente sconosciuto - Info sul continente non disponibili 26
OC - Oceania 1
Totale 6.389
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Nazione #
US - Stati Uniti d'America 3.490
GB - Regno Unito 740
SG - Singapore 406
CN - Cina 319
VN - Vietnam 152
IT - Italia 149
HK - Hong Kong 146
SE - Svezia 145
DE - Germania 104
BR - Brasile 93
RU - Federazione Russa 71
BD - Bangladesh 50
UA - Ucraina 50
FR - Francia 49
FI - Finlandia 45
TR - Turchia 35
KR - Corea 31
CA - Canada 28
IN - India 28
BG - Bulgaria 24
AR - Argentina 12
JP - Giappone 12
BE - Belgio 10
ID - Indonesia 10
MX - Messico 9
NL - Olanda 9
ZA - Sudafrica 9
PL - Polonia 8
CH - Svizzera 7
IE - Irlanda 7
AE - Emirati Arabi Uniti 6
CO - Colombia 6
ES - Italia 6
MA - Marocco 6
IQ - Iraq 4
KE - Kenya 4
MY - Malesia 4
NI - Nicaragua 4
DZ - Algeria 3
EC - Ecuador 3
IL - Israele 3
PE - Perù 3
PK - Pakistan 3
SN - Senegal 3
UZ - Uzbekistan 3
AT - Austria 2
AZ - Azerbaigian 2
BY - Bielorussia 2
CL - Cile 2
EG - Egitto 2
ET - Etiopia 2
EU - Europa 2
GT - Guatemala 2
KZ - Kazakistan 2
TW - Taiwan 2
VE - Venezuela 2
AL - Albania 1
AO - Angola 1
AU - Australia 1
BO - Bolivia 1
BS - Bahamas 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
EE - Estonia 1
GN - Guinea 1
GP - Guadalupe 1
HN - Honduras 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LK - Sri Lanka 1
LT - Lituania 1
LV - Lettonia 1
MG - Madagascar 1
MN - Mongolia 1
PA - Panama 1
PH - Filippine 1
PR - Porto Rico 1
PY - Paraguay 1
RS - Serbia 1
SC - Seychelles 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TG - Togo 1
TH - Thailandia 1
UY - Uruguay 1
Totale 6.365
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Città #
Southend 604
Ashburn 457
Fairfield 335
Santa Clara 277
Singapore 241
Woodbridge 236
Houston 187
Chandler 173
Ann Arbor 153
Hong Kong 141
Wilmington 131
San Jose 125
Cambridge 118
Seattle 118
Hefei 105
Jacksonville 103
Council Bluffs 78
Nyköping 78
Dearborn 75
Los Angeles 69
The Dalles 56
London 53
Beijing 51
Ho Chi Minh City 42
Hanoi 41
Modena 31
San Diego 31
Seoul 30
Buffalo 27
Princeton 25
Sofia 24
Des Moines 23
Bremen 21
Munich 21
Eugene 19
Helsinki 19
Izmir 18
Milan 17
Lauterbourg 16
São Paulo 16
Philadelphia 15
Chicago 14
New York 14
Norfolk 14
Moscow 13
Grafing 12
Phoenix 12
Shanghai 11
Solihull 11
Brussels 10
Columbus 10
Washington 10
Da Nang 9
Haiphong 8
Nanjing 8
Orem 8
Bolzano 7
Dallas 7
Denver 7
Falls Church 7
Guangzhou 7
Turku 7
Atlanta 6
Charlotte 6
Dublin 6
Naples 6
Redwood City 6
Salt Lake City 6
Auburn Hills 5
Boardman 5
Brantford 5
Hounslow 5
Lancaster 5
Reutlingen 5
Rome 5
Toronto 5
Amsterdam 4
Elk Grove Village 4
Managua 4
Montreal 4
Nairobi 4
New Orleans 4
North Bergen 4
Sterling 4
Tampa 4
Tokyo 4
Warsaw 4
Belo Horizonte 3
Biên Hòa 3
Bologna 3
Bắc Ninh 3
Can Tho 3
Chavannes 3
Delhi 3
Dubai 3
Forlì 3
Frankfurt am Main 3
Jakarta 3
Johannesburg 3
Kent 3
Totale 4.765
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Nome #
Evolution of defect profiles in He-implanted silicon studied by slow positrons 454
Thermal desorption spectra from cavities in helium-implanted silicon 410
Helium-implanted silicon: A study of bubble precursors 397
Vacancy-gettering in silicon: Cavities and helium-implantation 390
Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry 381
Damage evolution in helium-hydrogen co-implanted (100) silicon 352
Copper–titanium thin film interaction 348
Hydrogen and helium bubbles in silicon 345
Helium in silicon: Thermal-desorption investigation of bubble precursors 335
Transmission electron microscopy study of helium implanted silicon 331
Visible luminescence from silicon by hydrogen implantation and annealing treatments 318
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 306
He-implantation induced defects in Si studied by slow positron annihilation spectroscopy 296
Visible photoluminescence from He‐implanted silicon 290
Transmission Electron Microscopy study of Helium Implanted Silicon 282
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 282
Early stages of bubble formation in helium-implated (100) silicon 281
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 239
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 174
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 171
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
ORDERING PROCESS IN TETRAGONAL YBCO DOPED WITH FE AND ZN 1
OXYGEN DISORDERING IN TETRAGONAL Y1BA2CU3O6+EPSILON - A TIME-DEPENDENT STUDY 1
Totale 6.389
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Categoria #
all - tutte 24.497
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 24.497
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022307 0 0 0 0 7 20 44 21 46 37 100 32
2022/2023481 47 65 26 33 74 95 3 48 51 5 11 23
2023/2024209 3 17 5 43 68 15 8 23 4 3 3 17
2024/2025937 32 5 6 84 160 132 59 82 118 13 117 129
2025/20261.548 78 64 149 128 233 137 205 63 164 143 122 62
2026/2027439 42 83 111 168 35 0 0 0 0 0 0 0
Totale 6.389