CANALI, Claudio
 Distribuzione geografica
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Continente #
NA - Nord America 7.156
AS - Asia 2.992
EU - Europa 2.271
SA - Sud America 361
Continente sconosciuto - Info sul continente non disponibili 62
AF - Africa 42
OC - Oceania 1
Totale 12.885
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Nazione #
US - Stati Uniti d'America 7.016
CN - Cina 1.048
GB - Regno Unito 904
SG - Singapore 812
HK - Hong Kong 363
SE - Svezia 351
BR - Brasile 295
VN - Vietnam 247
DE - Germania 243
IT - Italia 185
KR - Corea 157
UA - Ucraina 135
TR - Turchia 133
FI - Finlandia 123
RU - Federazione Russa 98
FR - Francia 71
CA - Canada 68
IN - India 54
BG - Bulgaria 48
BD - Bangladesh 30
AR - Argentina 25
MX - Messico 25
JP - Giappone 24
IQ - Iraq 22
IE - Irlanda 16
NL - Olanda 15
PL - Polonia 15
CO - Colombia 12
CR - Costa Rica 12
LT - Lituania 12
ID - Indonesia 11
PT - Portogallo 11
BE - Belgio 10
ZA - Sudafrica 10
EC - Ecuador 9
SA - Arabia Saudita 9
ES - Italia 8
HN - Honduras 8
PK - Pakistan 8
JM - Giamaica 7
AE - Emirati Arabi Uniti 6
PH - Filippine 6
TW - Taiwan 6
VE - Venezuela 6
AT - Austria 5
CL - Cile 5
DZ - Algeria 5
KE - Kenya 5
NP - Nepal 5
PY - Paraguay 5
TH - Thailandia 5
TN - Tunisia 5
UZ - Uzbekistan 5
AZ - Azerbaigian 4
IL - Israele 4
MA - Marocco 4
MY - Malesia 4
OM - Oman 4
PA - Panama 4
PR - Porto Rico 4
RS - Serbia 4
DK - Danimarca 3
EG - Egitto 3
EU - Europa 3
GT - Guatemala 3
PE - Perù 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AM - Armenia 2
BS - Bahamas 2
CH - Svizzera 2
CY - Cipro 2
GH - Ghana 2
IR - Iran 2
JO - Giordania 2
KG - Kirghizistan 2
KZ - Kazakistan 2
LB - Libano 2
LK - Sri Lanka 2
LU - Lussemburgo 2
MD - Moldavia 2
NI - Nicaragua 2
QA - Qatar 2
SC - Seychelles 2
SN - Senegal 2
TT - Trinidad e Tobago 2
XK - ???statistics.table.value.countryCode.XK??? 2
AL - Albania 1
AO - Angola 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BF - Burkina Faso 1
BH - Bahrain 1
BY - Bielorussia 1
CG - Congo 1
CU - Cuba 1
EE - Estonia 1
ET - Etiopia 1
GE - Georgia 1
GP - Guadalupe 1
Totale 12.820
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Città #
Ashburn 894
Santa Clara 673
Southend 608
Fairfield 531
Hefei 501
Singapore 474
Woodbridge 393
Hong Kong 358
Chandler 333
Houston 318
San Jose 311
Jacksonville 294
Ann Arbor 258
Seattle 220
Dearborn 208
Council Bluffs 191
Wilmington 179
Cambridge 178
Nyköping 170
Seoul 152
Chicago 143
London 131
Beijing 120
Los Angeles 106
Izmir 90
The Dalles 87
Des Moines 74
Ho Chi Minh City 72
Hanoi 69
Helsinki 68
Buffalo 51
Princeton 51
Sofia 48
New York 47
Eugene 46
Milan 46
San Diego 46
Grafing 45
Lauterbourg 43
São Paulo 42
Dallas 34
Kent 32
Moscow 30
Shanghai 27
Orem 25
Redwood City 22
Modena 21
Falkenstein 19
Montreal 17
Toronto 17
Brooklyn 16
Tokyo 16
Chennai 15
Dublin 15
Salt Lake City 15
Columbus 14
Falls Church 14
Bremen 13
Tampa 13
Elk Grove Village 12
Munich 12
Philadelphia 12
Atlanta 11
Belo Horizonte 11
Guangzhou 11
Nanjing 11
Rio de Janeiro 11
Washington 11
Boardman 10
Da Nang 10
Denver 10
Haiphong 10
Miano 10
Phoenix 10
San Francisco 10
Warsaw 10
Brantford 9
Brussels 9
Kunming 9
Manchester 9
Mexico City 9
Turku 9
Albany 8
Frankfurt am Main 8
Indiana 8
Norwalk 8
Redondo Beach 8
Stockholm 8
Ankara 7
Auburn Hills 7
Baghdad 7
Biên Hòa 7
Changsha 7
Charlotte 7
Curitiba 7
Newark 7
Padova 7
San José 7
Baltimore 6
Chiswick 6
Totale 9.410
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Nome #
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 372
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 351
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 341
A temperature Compensated Ultrasonic Sensor Operating in Air for Distance and Proximity Measurements 339
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 329
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 324
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 317
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 309
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 307
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 303
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 297
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 297
Piezoresistive effects in thick-film resistors 287
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 279
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 275
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 273
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS 269
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 269
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs 266
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors 264
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector 263
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 263
Current collapse in AlGaN/GaN HEMT’s analysed by means of 2d device simulation 262
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal 261
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 259
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs 258
NEGATIVE BASE CURRENT AND IMPACT IONIZATION PHENOMENA IN ALGAAS/GAAS HBTS 253
Physical investigation of trap-related effects in power HFETs and their reliability implications 239
Physics-Based Explanation of Kink Dynamics in AlGaAs/GaAs HFETs 239
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 235
Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s 235
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 234
Trap characterization in buried-gate n-channel 6H-SiC JFETs 225
Strain Sensitivity in Thick-Film Resistors 222
HOT-ELECTRON ELECTROLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR 214
Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs 211
Deep traps in Beta-rhombohedral boron 209
Deep-level characterization in 6H-SiC JFETs by means of two-dimensional device simulations 209
Impact-ionization effects in advanced Si bipolar transistors 207
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs 205
Numerical analysis of hot electron degradation modes in power HFETs 195
Trap-related effects in 6H-SiC buried-gate JFETs 189
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs 188
Two-dimensional numerical simulation of deep-level effects in 6H-SiC buried-gate JFETs 176
Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors 172
Surface-related kink effect in AlGaAs/GaAs power HFETs 166
Epitaxial silicon carbide charge particle detectors 162
Deep levels in silicon carbide Schottky diodes 161
Double-junction effect in proton-irradiated silicon diodes 158
Electric field distribution in irradiated silicon detectors 154
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 152
Integration of front-end electronics with GaAs pixel detectors: Experimental and feasibility analysis 133
Influence of substrate on the performance of semi-insulating GaAs detectors 107
Electric field and space-charge distribution in SI GaAs:effect of high energy proton irradiation 1
Totale 12.885
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Categoria #
all - tutte 49.858
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 49.858
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022594 0 0 0 57 21 83 53 24 67 49 155 85
2022/2023921 97 95 49 86 80 202 18 87 117 8 35 47
2023/2024427 21 29 22 74 120 28 19 47 8 18 5 36
2024/20252.373 122 19 21 154 460 337 168 158 197 60 361 316
2025/20263.327 234 284 319 383 443 300 359 120 354 233 153 145
2026/20271.051 79 204 415 353 0 0 0 0 0 0 0 0
Totale 12.885