CANALI, Claudio
 Distribuzione geografica
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Continente #
NA - Nord America 6.112
AS - Asia 3.011
EU - Europa 2.227
SA - Sud America 350
AF - Africa 40
Continente sconosciuto - Info sul continente non disponibili 8
OC - Oceania 1
Totale 11.749
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Nazione #
US - Stati Uniti d'America 6.028
CN - Cina 1.056
GB - Regno Unito 912
SG - Singapore 824
HK - Hong Kong 365
SE - Svezia 360
BR - Brasile 285
VN - Vietnam 250
DE - Germania 246
KR - Corea 160
TR - Turchia 135
UA - Ucraina 135
FI - Finlandia 125
IT - Italia 124
RU - Federazione Russa 100
FR - Francia 70
IN - India 56
BG - Bulgaria 49
CA - Canada 45
AR - Argentina 27
JP - Giappone 23
MX - Messico 22
IQ - Iraq 21
BD - Bangladesh 19
IE - Irlanda 15
PL - Polonia 14
LT - Lituania 12
NL - Olanda 12
PT - Portogallo 12
CO - Colombia 11
ZA - Sudafrica 10
ID - Indonesia 9
SA - Arabia Saudita 9
BE - Belgio 8
EC - Ecuador 8
ES - Italia 8
PK - Pakistan 8
PH - Filippine 7
AE - Emirati Arabi Uniti 6
TW - Taiwan 6
VE - Venezuela 6
AT - Austria 5
CL - Cile 5
DZ - Algeria 5
KE - Kenya 5
MY - Malesia 5
NP - Nepal 5
OM - Oman 5
TH - Thailandia 5
TN - Tunisia 5
UZ - Uzbekistan 5
AZ - Azerbaigian 4
MA - Marocco 4
PY - Paraguay 4
RS - Serbia 4
DK - Danimarca 3
EG - Egitto 3
EU - Europa 3
LK - Sri Lanka 3
PA - Panama 3
PE - Perù 3
TT - Trinidad e Tobago 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AM - Armenia 2
CH - Svizzera 2
CR - Costa Rica 2
CY - Cipro 2
GH - Ghana 2
HN - Honduras 2
IL - Israele 2
IR - Iran 2
JM - Giamaica 2
JO - Giordania 2
KG - Kirghizistan 2
KZ - Kazakistan 2
LB - Libano 2
LU - Lussemburgo 2
MD - Moldavia 2
QA - Qatar 2
SN - Senegal 2
XK - ???statistics.table.value.countryCode.XK??? 2
AL - Albania 1
AO - Angola 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BF - Burkina Faso 1
BH - Bahrain 1
BY - Bielorussia 1
CG - Congo 1
CU - Cuba 1
ET - Etiopia 1
GE - Georgia 1
GR - Grecia 1
GT - Guatemala 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
MN - Mongolia 1
NI - Nicaragua 1
Totale 11.742
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Città #
Santa Clara 664
Southend 618
Fairfield 549
Hefei 516
Singapore 488
Ashburn 478
Woodbridge 398
Hong Kong 361
Chandler 339
Houston 332
Jacksonville 302
Ann Arbor 260
Seattle 225
Dearborn 211
Wilmington 187
Cambridge 181
Nyköping 173
Seoul 156
Chicago 146
San Jose 135
London 133
Beijing 121
Los Angeles 100
Izmir 91
The Dalles 90
Des Moines 74
Ho Chi Minh City 73
Hanoi 69
Helsinki 69
Buffalo 52
Princeton 52
Sofia 49
Council Bluffs 48
Eugene 47
Grafing 46
San Diego 45
Lauterbourg 44
New York 44
São Paulo 33
Kent 32
Moscow 31
Orem 26
Shanghai 26
Dallas 25
Redwood City 22
Modena 21
Falkenstein 20
Milan 18
Montreal 17
Chennai 16
Tokyo 16
Dublin 15
Salt Lake City 15
Falls Church 14
Bremen 13
Elk Grove Village 13
Brooklyn 12
Columbus 12
Haiphong 12
Munich 12
Nanjing 12
Atlanta 11
Belo Horizonte 11
Philadelphia 11
Rio de Janeiro 11
Tampa 11
Da Nang 10
Denver 10
Guangzhou 10
San Francisco 10
Toronto 10
Brantford 9
Frankfurt am Main 9
Kunming 9
Manchester 9
Turku 9
Warsaw 9
Albany 8
Boardman 8
Indiana 8
Norwalk 8
Redondo Beach 8
Stockholm 8
Washington 8
Ankara 7
Auburn Hills 7
Baghdad 7
Biên Hòa 7
Brussels 7
Changsha 7
Curitiba 7
Padova 7
Phoenix 7
San Mateo 7
Chiswick 6
Dulles 6
Mexico City 6
Prescot 6
Acton 5
Charlotte 5
Totale 8.718
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Nome #
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 342
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 318
A temperature Compensated Ultrasonic Sensor Operating in Air for Distance and Proximity Measurements 313
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 308
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 305
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 296
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 295
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 287
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 272
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 270
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's 268
Piezoresistive effects in thick-film resistors 267
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 261
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 257
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 255
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 253
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 251
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 251
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS 245
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal 244
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs 243
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors 241
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs 241
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector 240
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 227
Current collapse in AlGaN/GaN HEMT’s analysed by means of 2d device simulation 223
Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s 222
NEGATIVE BASE CURRENT AND IMPACT IONIZATION PHENOMENA IN ALGAAS/GAAS HBTS 222
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 220
Trap characterization in buried-gate n-channel 6H-SiC JFETs 213
Physical investigation of trap-related effects in power HFETs and their reliability implications 212
Physics-Based Explanation of Kink Dynamics in AlGaAs/GaAs HFETs 211
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 209
Strain Sensitivity in Thick-Film Resistors 200
Impact-ionization effects in advanced Si bipolar transistors 193
Deep-level characterization in 6H-SiC JFETs by means of two-dimensional device simulations 193
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs 192
Deep traps in Beta-rhombohedral boron 190
HOT-ELECTRON ELECTROLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR 189
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs 175
Trap-related effects in 6H-SiC buried-gate JFETs 175
Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs 170
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 164
Two-dimensional numerical simulation of deep-level effects in 6H-SiC buried-gate JFETs 163
Numerical analysis of hot electron degradation modes in power HFETs 157
Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors 147
Surface-related kink effect in AlGaAs/GaAs power HFETs 140
Deep levels in silicon carbide Schottky diodes 139
Electric field distribution in irradiated silicon detectors 137
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 135
Epitaxial silicon carbide charge particle detectors 134
Double-junction effect in proton-irradiated silicon diodes 124
Integration of front-end electronics with GaAs pixel detectors: Experimental and feasibility analysis 112
Influence of substrate on the performance of semi-insulating GaAs detectors 91
Electric field and space-charge distribution in SI GaAs:effect of high energy proton irradiation 1
Totale 11.803
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Categoria #
all - tutte 44.150
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 44.150
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021221 0 0 0 0 0 0 0 0 0 124 50 47
2021/2022834 25 118 80 59 21 87 53 24 68 51 161 87
2022/2023934 98 99 50 89 81 204 18 87 118 8 35 47
2023/2024434 22 29 22 76 123 28 19 48 8 18 5 36
2024/20252.426 125 19 21 157 469 344 173 162 200 61 371 324
2025/20263.108 240 290 334 391 450 307 368 123 366 239 0 0
Totale 11.803