PAVAN, Paolo
 Distribuzione geografica
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Continente #
NA - Nord America 42.671
AS - Asia 19.709
EU - Europa 16.132
SA - Sud America 2.019
Continente sconosciuto - Info sul continente non disponibili 529
AF - Africa 292
OC - Oceania 22
Totale 81.374
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Nazione #
US - Stati Uniti d'America 41.737
CN - Cina 5.975
SG - Singapore 5.731
GB - Regno Unito 4.473
IT - Italia 3.505
HK - Hong Kong 2.683
DE - Germania 1.628
SE - Svezia 1.618
BR - Brasile 1.547
VN - Vietnam 1.332
KR - Corea 1.043
FI - Finlandia 769
FR - Francia 760
PL - Polonia 736
BD - Bangladesh 710
UA - Ucraina 633
RU - Federazione Russa 599
TR - Turchia 569
CA - Canada 442
IN - India 434
BG - Bulgaria 293
NL - Olanda 250
JP - Giappone 218
PT - Portogallo 190
MX - Messico 155
AR - Argentina 147
TW - Taiwan 147
ID - Indonesia 133
ES - Italia 114
IQ - Iraq 108
BE - Belgio 88
ZA - Sudafrica 85
CO - Colombia 82
PK - Pakistan 81
IE - Irlanda 78
EC - Ecuador 77
AE - Emirati Arabi Uniti 75
CR - Costa Rica 70
MY - Malesia 67
CH - Svizzera 61
IL - Israele 61
LT - Lituania 55
AT - Austria 52
PH - Filippine 48
CL - Cile 44
SA - Arabia Saudita 44
MA - Marocco 43
VE - Venezuela 42
JM - Giamaica 38
TT - Trinidad e Tobago 33
UZ - Uzbekistan 33
GT - Guatemala 31
PR - Porto Rico 30
EG - Egitto 28
GR - Grecia 27
HN - Honduras 26
NP - Nepal 25
CW - ???statistics.table.value.countryCode.CW??? 24
DZ - Algeria 24
IR - Iran 24
PY - Paraguay 24
TH - Thailandia 24
TN - Tunisia 24
CZ - Repubblica Ceca 23
JO - Giordania 23
LU - Lussemburgo 23
SV - El Salvador 23
PE - Perù 22
RO - Romania 22
EE - Estonia 20
NI - Nicaragua 20
GP - Guadalupe 19
BY - Bielorussia 18
UY - Uruguay 17
AZ - Azerbaigian 16
KE - Kenya 16
AL - Albania 15
AU - Australia 14
OM - Oman 14
DK - Danimarca 13
DO - Repubblica Dominicana 13
HU - Ungheria 13
SN - Senegal 12
BO - Bolivia 11
EU - Europa 11
KZ - Kazakistan 11
BB - Barbados 10
ET - Etiopia 10
PS - Palestinian Territory 10
LB - Libano 9
NO - Norvegia 9
RS - Serbia 9
SC - Seychelles 9
BH - Bahrain 8
GE - Georgia 8
NZ - Nuova Zelanda 8
SK - Slovacchia (Repubblica Slovacca) 8
CG - Congo 7
AO - Angola 6
GY - Guiana 6
Totale 80.753
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Città #
Ashburn 5.259
Singapore 3.649
Fairfield 3.530
Santa Clara 3.146
Southend 3.074
Hong Kong 2.601
Hefei 2.416
San Jose 2.158
Woodbridge 2.152
Chandler 1.847
Houston 1.843
Seattle 1.460
Council Bluffs 1.346
Jacksonville 1.246
Wilmington 1.179
Cambridge 1.175
Ann Arbor 1.114
Chicago 1.017
Dearborn 868
Nyköping 867
Beijing 819
London 801
Seoul 785
Warsaw 714
Los Angeles 633
The Dalles 539
Modena 534
Helsinki 518
Milan 467
Ho Chi Minh City 450
New York 443
San Diego 356
Izmir 317
Hanoi 304
Grafing 298
Princeton 289
Sofia 275
Buffalo 267
Columbus 232
Eugene 220
Lauterbourg 209
Dallas 194
Boardman 183
Des Moines 171
Rome 163
São Paulo 163
Shanghai 157
Salt Lake City 150
Moscow 145
Redwood City 145
Bremen 143
Tokyo 140
Bologna 132
Guangzhou 129
Munich 128
Frankfurt am Main 125
Atlanta 113
Falkenstein 107
Saint Augustine 102
Brooklyn 95
Orem 90
Toronto 89
Phoenix 86
Chennai 80
Tampa 71
Da Nang 68
Jakarta 68
Taipei 67
Montreal 66
San Francisco 66
Denver 60
Wuhan 59
Nanjing 57
Norfolk 54
Reggio Emilia 54
Kent 53
Dublin 52
Paris 52
Dhaka 49
Miano 49
Brussels 46
Elk Grove Village 46
Haiphong 46
Mexico City 46
Amsterdam 45
Baghdad 45
Dresden 45
Newark 44
Boston 43
Rio de Janeiro 43
Falls Church 42
North Bergen 42
North Charleston 42
Charlotte 41
Delfgauw 41
Philadelphia 41
Turin 40
Verona 40
Washington 40
Norwalk 39
Totale 56.249
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Nome #
Unimore Resistive Random Access Memory (RRAM) Verilog-A Model 1.0.0 850
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 806
XBW s.r.l. - Mechatronic Solutions 766
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 747
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 624
Leakage current in HfO2 stacks: from physical to compact modeling 526
Control of brushless DC motor with static redundancy for force-feedback in steer-by-wire applications 518
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 433
A microscopic physical description of RTN current fluctuations in HfOx RRAM 428
Active Safety System with RF Energy Harvesting Capabilities for Industrial Applications using Interchangeable Implements 426
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 424
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 421
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 420
250mV Input Boost Converter for Low Power Applications 417
Photovoltaic scavenging systems: Modeling and optimization 416
A WSN System Powered by Vibrations to Improve Safety of Machinery with Trailer 414
A new compact DC model of floating gate memory cells without capacitive coupling coefficients 411
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 410
Random telegraph noise: Measurement, data analysis, and interpretation 409
Can NROM, a 2 Bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells? 407
Recommended Methods to Study Resistive Switching Devices 406
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 405
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 401
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors 396
Optimized Energy-Aware Wireless System for Identification of the Relative Positioning of Articulated Systems in the Free Space 389
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 389
An autonomous wireless sensor network device powered by a RF energy harvesting system 385
RF to DC CMOS rectifier with high efficiency over a wide input power range for RFID applications 381
A Solar Energy Harvesting Circuit for Low Power Applications 378
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 377
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 377
embit s.r.l. 377
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 375
AlN-based MEMS devices for vibrational energy harvesting applications 374
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization 374
Understanding current instabilities in conductive atomic force microscopy 367
A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory 366
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 366
System With RF Power Delivery Capabilities for Active Safety Enhancement in Industrial Vehicles Using Interchangeable Implements 364
A new model of gate capacitance as a simple tool to extract MOS parameters 362
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology 362
Photovoltaic Cell Modeling for Solar Energy Powered Sensor Networks 360
Comprehensive physics-based RRAM compact model including the effect of variability and multi-level random telegraph noise 356
Solar Energy Harvesting: applicazioni a bassa potenza 356
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 356
Enhancing Safety in Vehicles with Implement or Trailer using an Autonomous Wireless Sensor Network System 356
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM 356
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 355
Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices 354
Charge Transport and Degradation in HfO2 and HfOx Dielectrics 353
A Vibration-Powered Wireless System to Enhance Safety in Agricultural Machinery 353
Characterization and Modeling of Low-Cost Contact-Mode Triboelectric Devices for Energy Harvesting 353
Mixed-Mode Stress in Silicon-Germanium Heterostructure Bipolar Transistors: Insights from Experiments and Simulations 353
Physical modeling and characterization of thermo-acoustic loudspeakers made of silver nano-wire films 351
Temperature impact on the reset operation in HfO2 RRAM 351
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 349
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 346
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 343
Force Feedback in Steer-by-Wire Systems: Architecture and Experimental Results 342
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 341
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 341
Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling 341
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 340
RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM 339
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 339
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 339
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 336
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 336
Progresses in Modeling HfOx RRAM Operations and Variability 335
A memory window expression to evaluate the endurance of ferroelectric FETs 335
A new compact Spice-like model of E2PROM Memory cells suitable for DC and transient simulations 334
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 334
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 332
Monitoring Stress-Induced Defects in HK/MG FinFETs Using Random Telegraph Noise 332
An Ultra-Low Cost Triboelectric Flowmeter 332
Force Impact Effect in Contact-Mode Triboelectric Energy Harvesters: Characterization and Modeling 330
Study of RRAM-Based Binarized Neural Networks Inference Accelerators Using an RRAM Physics-Based Compact Model 329
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 328
A complete radiation reliability software simulator 327
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 327
A complete model of (EPROM)-P-2 memory cells for circuit simulations 326
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise 326
A New Compact Model of Floating Gate Non-Volatile Memory Cells 325
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 325
Low-Bit Precision Neural Network Architecture with High Immunity to Variability and Random Telegraph Noise based on Resistive Memories 325
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 325
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules 324
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 324
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 323
Solar harvesting per reti di sensori wireless 322
Ultra low cost triboelectric energy harvesting solutions for embedded sensor systems 322
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 321
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 321
RTS Noise Characterization of HfOx RRAM in High Resistive State 319
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS 319
On the RESET-SET transition in Phase Change Memories 318
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 315
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 314
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 314
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence 313
Totale 38.035
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Categoria #
all - tutte 295.414
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 295.414
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20223.871 0 0 0 0 135 673 212 279 549 459 1.105 459
2022/20235.324 537 619 291 475 674 852 137 538 640 67 301 193
2023/20243.874 190 202 222 393 900 383 301 419 81 187 143 453
2024/202514.405 978 215 207 912 2.110 1.966 1.018 861 1.312 614 2.327 1.885
2025/202622.367 1.814 1.207 1.732 1.922 3.032 2.295 2.612 979 2.272 1.919 1.532 1.051
2026/20277.814 910 1.690 2.180 2.749 285 0 0 0 0 0 0 0
Totale 81.374