PAVAN, Paolo
 Distribuzione geografica
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Continente #
NA - Nord America 38.943
AS - Asia 19.602
EU - Europa 15.857
SA - Sud America 1.960
Continente sconosciuto - Info sul continente non disponibili 504
AF - Africa 283
OC - Oceania 20
Totale 77.169
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Nazione #
US - Stati Uniti d'America 38.267
CN - Cina 5.956
SG - Singapore 5.713
GB - Regno Unito 4.423
IT - Italia 3.394
HK - Hong Kong 2.678
SE - Svezia 1.614
DE - Germania 1.610
BR - Brasile 1.506
VN - Vietnam 1.332
KR - Corea 1.039
FI - Finlandia 768
FR - Francia 741
PL - Polonia 736
BD - Bangladesh 707
UA - Ucraina 624
RU - Federazione Russa 570
TR - Turchia 569
IN - India 416
CA - Canada 350
BG - Bulgaria 292
NL - Olanda 248
JP - Giappone 210
PT - Portogallo 190
MX - Messico 152
AR - Argentina 144
TW - Taiwan 142
ID - Indonesia 133
ES - Italia 109
IQ - Iraq 108
BE - Belgio 87
ZA - Sudafrica 85
PK - Pakistan 80
CO - Colombia 76
EC - Ecuador 75
IE - Irlanda 75
AE - Emirati Arabi Uniti 73
MY - Malesia 65
CH - Svizzera 60
LT - Lituania 53
AT - Austria 52
CR - Costa Rica 48
PH - Filippine 48
IL - Israele 43
MA - Marocco 43
CL - Cile 42
SA - Arabia Saudita 42
VE - Venezuela 40
UZ - Uzbekistan 32
JM - Giamaica 30
EG - Egitto 28
GR - Grecia 27
NP - Nepal 25
DZ - Algeria 24
IR - Iran 24
PY - Paraguay 24
TH - Thailandia 24
CZ - Repubblica Ceca 23
JO - Giordania 23
LU - Lussemburgo 23
TN - Tunisia 23
RO - Romania 22
PE - Perù 21
BY - Bielorussia 18
UY - Uruguay 17
AZ - Azerbaigian 16
KE - Kenya 16
AL - Albania 14
OM - Oman 14
AU - Australia 13
DO - Repubblica Dominicana 13
HU - Ungheria 13
PR - Porto Rico 13
TT - Trinidad e Tobago 13
SN - Senegal 12
BO - Bolivia 11
EU - Europa 11
KZ - Kazakistan 11
BB - Barbados 10
ET - Etiopia 10
HN - Honduras 10
PS - Palestinian Territory 10
DK - Danimarca 9
LB - Libano 9
NI - Nicaragua 9
NO - Norvegia 9
RS - Serbia 9
GE - Georgia 8
SK - Slovacchia (Repubblica Slovacca) 8
BH - Bahrain 7
CG - Congo 7
GT - Guatemala 7
NZ - Nuova Zelanda 7
AO - Angola 6
EE - Estonia 6
HR - Croazia 6
KG - Kirghizistan 6
NG - Nigeria 6
QA - Qatar 6
SV - El Salvador 5
Totale 76.576
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Città #
Ashburn 4.127
Singapore 3.643
Fairfield 3.530
Santa Clara 3.093
Southend 3.074
Hong Kong 2.600
Hefei 2.416
Woodbridge 2.151
San Jose 1.935
Chandler 1.846
Houston 1.839
Seattle 1.453
Jacksonville 1.243
Wilmington 1.179
Cambridge 1.169
Ann Arbor 1.114
Chicago 985
Council Bluffs 884
Dearborn 868
Nyköping 867
Beijing 814
London 798
Seoul 785
Warsaw 714
Los Angeles 600
Modena 534
The Dalles 525
Helsinki 518
Milan 452
Ho Chi Minh City 450
New York 426
San Diego 353
Izmir 317
Hanoi 304
Grafing 298
Princeton 275
Sofia 275
Buffalo 264
Columbus 223
Eugene 220
Lauterbourg 209
Boardman 182
Dallas 178
Des Moines 170
Shanghai 157
Rome 148
Salt Lake City 147
Moscow 145
Redwood City 145
Bremen 142
São Paulo 141
Tokyo 132
Bologna 130
Guangzhou 129
Munich 126
Frankfurt am Main 123
Falkenstein 107
Atlanta 93
Orem 88
Chennai 80
Phoenix 78
Brooklyn 72
Tampa 69
Toronto 69
Da Nang 68
Jakarta 68
Taipei 67
San Francisco 61
Wuhan 59
Montreal 57
Nanjing 57
Reggio Emilia 54
Kent 53
Dublin 50
Paris 50
Dhaka 49
Miano 49
Elk Grove Village 46
Haiphong 46
Mexico City 46
Amsterdam 45
Baghdad 45
Brussels 45
Denver 44
Dresden 44
Rio de Janeiro 43
Falls Church 42
Delfgauw 41
Norwalk 39
Boston 38
Redondo Beach 38
Verona 38
Zhengzhou 38
Brantford 37
Johannesburg 37
Parma 37
Manchester 35
Turin 35
Charlotte 34
Hải Dương 34
Totale 53.890
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Nome #
Unimore Resistive Random Access Memory (RRAM) Verilog-A Model 1.0.0 800
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 777
XBW s.r.l. - Mechatronic Solutions 755
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 724
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 575
Leakage current in HfO2 stacks: from physical to compact modeling 510
Control of brushless DC motor with static redundancy for force-feedback in steer-by-wire applications 508
Active Safety System with RF Energy Harvesting Capabilities for Industrial Applications using Interchangeable Implements 417
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 411
A microscopic physical description of RTN current fluctuations in HfOx RRAM 410
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 407
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 404
250mV Input Boost Converter for Low Power Applications 403
A WSN System Powered by Vibrations to Improve Safety of Machinery with Trailer 403
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 401
Can NROM, a 2 Bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells? 399
A new compact DC model of floating gate memory cells without capacitive coupling coefficients 397
Photovoltaic scavenging systems: Modeling and optimization 396
Random telegraph noise: Measurement, data analysis, and interpretation 396
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 389
Recommended Methods to Study Resistive Switching Devices 388
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 387
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 385
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 377
An autonomous wireless sensor network device powered by a RF energy harvesting system 375
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 370
Optimized Energy-Aware Wireless System for Identification of the Relative Positioning of Articulated Systems in the Free Space 367
A Solar Energy Harvesting Circuit for Low Power Applications 367
RF to DC CMOS rectifier with high efficiency over a wide input power range for RFID applications 366
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 366
AlN-based MEMS devices for vibrational energy harvesting applications 365
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 363
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization 361
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors 358
System With RF Power Delivery Capabilities for Active Safety Enhancement in Industrial Vehicles Using Interchangeable Implements 356
A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory 354
Understanding current instabilities in conductive atomic force microscopy 353
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology 352
A new model of gate capacitance as a simple tool to extract MOS parameters 347
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 344
Photovoltaic Cell Modeling for Solar Energy Powered Sensor Networks 344
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM 343
Temperature impact on the reset operation in HfO2 RRAM 342
Characterization and Modeling of Low-Cost Contact-Mode Triboelectric Devices for Energy Harvesting 342
embit s.r.l. 342
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 341
A Vibration-Powered Wireless System to Enhance Safety in Agricultural Machinery 341
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 338
Mixed-Mode Stress in Silicon-Germanium Heterostructure Bipolar Transistors: Insights from Experiments and Simulations 337
Charge Transport and Degradation in HfO2 and HfOx Dielectrics 335
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 334
Force Feedback in Steer-by-Wire Systems: Architecture and Experimental Results 333
Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices 332
Solar Energy Harvesting: applicazioni a bassa potenza 331
Enhancing Safety in Vehicles with Implement or Trailer using an Autonomous Wireless Sensor Network System 331
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 331
Physical modeling and characterization of thermo-acoustic loudspeakers made of silver nano-wire films 330
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 328
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 328
Progresses in Modeling HfOx RRAM Operations and Variability 327
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 326
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 326
Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling 326
A new compact Spice-like model of E2PROM Memory cells suitable for DC and transient simulations 325
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 325
An Ultra-Low Cost Triboelectric Flowmeter 324
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 323
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 323
Comprehensive physics-based RRAM compact model including the effect of variability and multi-level random telegraph noise 322
Monitoring Stress-Induced Defects in HK/MG FinFETs Using Random Telegraph Noise 322
RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM 320
Force Impact Effect in Contact-Mode Triboelectric Energy Harvesters: Characterization and Modeling 320
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 319
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 317
Solar harvesting per reti di sensori wireless 315
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 315
RTS Noise Characterization of HfOx RRAM in High Resistive State 313
A memory window expression to evaluate the endurance of ferroelectric FETs 313
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 313
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 313
Study of RRAM-Based Binarized Neural Networks Inference Accelerators Using an RRAM Physics-Based Compact Model 310
On the RESET-SET transition in Phase Change Memories 310
A complete model of (EPROM)-P-2 memory cells for circuit simulations 310
Ultra low cost triboelectric energy harvesting solutions for embedded sensor systems 310
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 309
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise 309
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 308
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 308
Energetic Approach for Steer-by-Wire in Off-highway Vehicles 306
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules 305
A complete radiation reliability software simulator 303
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 303
An investigation on the role of current compliance in HfO2-based RRAM in HRS using RTN and I-V data 301
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 301
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 300
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 300
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 300
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 298
A New Compact Model of Floating Gate Non-Volatile Memory Cells 297
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS 297
Totale 36.378
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Categoria #
all - tutte 282.609
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 282.609
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20224.536 0 0 400 265 135 673 212 279 549 459 1.105 459
2022/20235.324 537 619 291 475 674 852 137 538 640 67 301 193
2023/20243.874 190 202 222 393 900 383 301 419 81 187 143 453
2024/202514.405 978 215 207 912 2.110 1.966 1.018 861 1.312 614 2.327 1.885
2025/202622.367 1.814 1.207 1.732 1.922 3.032 2.295 2.612 979 2.272 1.919 1.532 1.051
2026/20273.609 910 1.690 1.009 0 0 0 0 0 0 0 0 0
Totale 77.169