PAVAN, Paolo
 Distribuzione geografica
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Continente #
NA - Nord America 36.457
AS - Asia 19.464
EU - Europa 15.741
SA - Sud America 1.937
Continente sconosciuto - Info sul continente non disponibili 503
AF - Africa 281
OC - Oceania 20
Totale 74.403
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Nazione #
US - Stati Uniti d'America 35.896
CN - Cina 5.933
SG - Singapore 5.698
GB - Regno Unito 4.418
IT - Italia 3.311
HK - Hong Kong 2.661
SE - Svezia 1.614
DE - Germania 1.602
BR - Brasile 1.499
VN - Vietnam 1.328
KR - Corea 1.030
FI - Finlandia 768
FR - Francia 736
PL - Polonia 735
BD - Bangladesh 680
UA - Ucraina 623
RU - Federazione Russa 570
TR - Turchia 569
IN - India 402
CA - Canada 306
BG - Bulgaria 292
NL - Olanda 247
JP - Giappone 200
PT - Portogallo 190
MX - Messico 149
AR - Argentina 141
TW - Taiwan 140
ID - Indonesia 130
IQ - Iraq 107
ES - Italia 105
ZA - Sudafrica 85
BE - Belgio 83
PK - Pakistan 79
IE - Irlanda 75
AE - Emirati Arabi Uniti 73
EC - Ecuador 72
CO - Colombia 69
MY - Malesia 62
CH - Svizzera 60
LT - Lituania 53
AT - Austria 51
PH - Filippine 46
MA - Marocco 43
IL - Israele 42
SA - Arabia Saudita 42
CL - Cile 41
VE - Venezuela 39
UZ - Uzbekistan 32
EG - Egitto 28
GR - Grecia 27
NP - Nepal 25
DZ - Algeria 24
IR - Iran 24
PY - Paraguay 24
CZ - Repubblica Ceca 23
JO - Giordania 23
LU - Lussemburgo 23
TN - Tunisia 23
CR - Costa Rica 22
RO - Romania 22
TH - Thailandia 22
PE - Perù 21
JM - Giamaica 19
BY - Bielorussia 18
AZ - Azerbaigian 16
UY - Uruguay 16
KE - Kenya 15
AL - Albania 14
AU - Australia 13
DO - Repubblica Dominicana 13
HU - Ungheria 13
OM - Oman 13
SN - Senegal 12
BO - Bolivia 11
EU - Europa 11
KZ - Kazakistan 11
ET - Etiopia 10
PS - Palestinian Territory 10
DK - Danimarca 9
NO - Norvegia 9
RS - Serbia 9
GE - Georgia 8
HN - Honduras 8
LB - Libano 8
NI - Nicaragua 8
SK - Slovacchia (Repubblica Slovacca) 8
TT - Trinidad e Tobago 8
BB - Barbados 7
BH - Bahrain 7
CG - Congo 7
NZ - Nuova Zelanda 7
AO - Angola 6
EE - Estonia 6
NG - Nigeria 6
PR - Porto Rico 6
QA - Qatar 6
HR - Croazia 5
KG - Kirghizistan 5
CY - Cipro 4
GY - Guiana 4
Totale 73.824
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Città #
Singapore 3.635
Ashburn 3.608
Fairfield 3.530
Southend 3.074
Santa Clara 3.055
Hong Kong 2.585
Hefei 2.416
Woodbridge 2.150
Chandler 1.844
Houston 1.836
San Jose 1.677
Seattle 1.406
Jacksonville 1.237
Wilmington 1.177
Cambridge 1.169
Ann Arbor 1.114
Chicago 970
Dearborn 867
Nyköping 867
Beijing 804
London 794
Seoul 785
Warsaw 714
Los Angeles 560
Modena 534
The Dalles 524
Helsinki 518
Council Bluffs 502
Ho Chi Minh City 449
Milan 413
New York 408
San Diego 353
Izmir 317
Hanoi 302
Grafing 298
Princeton 275
Sofia 275
Buffalo 250
Eugene 220
Lauterbourg 209
Boardman 182
Des Moines 168
Dallas 167
Shanghai 154
Columbus 147
Moscow 145
Redwood City 145
Rome 144
Salt Lake City 144
Bremen 142
São Paulo 140
Bologna 130
Tokyo 130
Guangzhou 129
Munich 126
Frankfurt am Main 122
Falkenstein 107
Orem 86
Atlanta 84
Chennai 79
Da Nang 68
Jakarta 68
Taipei 67
Tampa 67
Brooklyn 66
Phoenix 66
Toronto 60
Wuhan 59
San Francisco 58
Nanjing 57
Reggio Emilia 54
Kent 53
Montreal 53
Paris 50
Dublin 49
Miano 49
Dhaka 47
Elk Grove Village 46
Haiphong 46
Amsterdam 45
Baghdad 44
Mexico City 44
Brussels 43
Rio de Janeiro 43
Denver 42
Falls Church 42
Delfgauw 41
Dresden 40
Norwalk 38
Redondo Beach 38
Zhengzhou 38
Brantford 37
Johannesburg 37
Parma 37
Verona 36
Hải Dương 34
Poplar 34
Turin 34
Turku 34
Boston 33
Totale 52.289
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Nome #
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 762
XBW s.r.l. - Mechatronic Solutions 743
Unimore Resistive Random Access Memory (RRAM) Verilog-A Model 1.0.0 737
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 701
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 534
Leakage current in HfO2 stacks: from physical to compact modeling 495
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 408
Active Safety System with RF Energy Harvesting Capabilities for Industrial Applications using Interchangeable Implements 407
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 402
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 397
A WSN System Powered by Vibrations to Improve Safety of Machinery with Trailer 395
A microscopic physical description of RTN current fluctuations in HfOx RRAM 393
250mV Input Boost Converter for Low Power Applications 392
Random telegraph noise: Measurement, data analysis, and interpretation 387
Can NROM, a 2 Bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells? 387
A new compact DC model of floating gate memory cells without capacitive coupling coefficients 384
Recommended Methods to Study Resistive Switching Devices 382
Photovoltaic scavenging systems: Modeling and optimization 380
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 380
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 374
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 373
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 370
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 368
An autonomous wireless sensor network device powered by a RF energy harvesting system 364
Optimized Energy-Aware Wireless System for Identification of the Relative Positioning of Articulated Systems in the Free Space 359
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 359
AlN-based MEMS devices for vibrational energy harvesting applications 358
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 356
RF to DC CMOS rectifier with high efficiency over a wide input power range for RFID applications 356
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 355
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization 355
A Solar Energy Harvesting Circuit for Low Power Applications 350
System With RF Power Delivery Capabilities for Active Safety Enhancement in Industrial Vehicles Using Interchangeable Implements 349
A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory 347
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors 345
Understanding current instabilities in conductive atomic force microscopy 345
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology 342
Photovoltaic Cell Modeling for Solar Energy Powered Sensor Networks 339
A new model of gate capacitance as a simple tool to extract MOS parameters 338
Control of brushless DC motor with static redundancy for force-feedback in steer-by-wire applications 337
Temperature impact on the reset operation in HfO2 RRAM 337
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM 336
Characterization and Modeling of Low-Cost Contact-Mode Triboelectric Devices for Energy Harvesting 334
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 332
A Vibration-Powered Wireless System to Enhance Safety in Agricultural Machinery 329
Mixed-Mode Stress in Silicon-Germanium Heterostructure Bipolar Transistors: Insights from Experiments and Simulations 329
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 329
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 328
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 327
Force Feedback in Steer-by-Wire Systems: Architecture and Experimental Results 326
embit s.r.l. 325
Enhancing Safety in Vehicles with Implement or Trailer using an Autonomous Wireless Sensor Network System 322
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 322
Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices 322
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 322
Solar Energy Harvesting: applicazioni a bassa potenza 321
Progresses in Modeling HfOx RRAM Operations and Variability 320
A new compact Spice-like model of E2PROM Memory cells suitable for DC and transient simulations 319
Charge Transport and Degradation in HfO2 and HfOx Dielectrics 319
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 319
Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling 319
Monitoring Stress-Induced Defects in HK/MG FinFETs Using Random Telegraph Noise 317
An Ultra-Low Cost Triboelectric Flowmeter 317
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 316
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 313
Physical modeling and characterization of thermo-acoustic loudspeakers made of silver nano-wire films 312
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 312
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 312
RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM 311
Force Impact Effect in Contact-Mode Triboelectric Energy Harvesters: Characterization and Modeling 311
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 309
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 309
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 308
Comprehensive physics-based RRAM compact model including the effect of variability and multi-level random telegraph noise 307
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 307
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 307
Ultra low cost triboelectric energy harvesting solutions for embedded sensor systems 306
A memory window expression to evaluate the endurance of ferroelectric FETs 305
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 305
On the RESET-SET transition in Phase Change Memories 304
Solar harvesting per reti di sensori wireless 303
A complete model of (EPROM)-P-2 memory cells for circuit simulations 303
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 303
Study of RRAM-Based Binarized Neural Networks Inference Accelerators Using an RRAM Physics-Based Compact Model 301
Energetic Approach for Steer-by-Wire in Off-highway Vehicles 300
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise 299
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules 297
RTS Noise Characterization of HfOx RRAM in High Resistive State 297
An investigation on the role of current compliance in HfO2-based RRAM in HRS using RTN and I-V data 296
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 295
A complete radiation reliability software simulator 293
Dielectric Reliability for Future Logic and Non-Volatile Memory Applications: a Statistical Simulation Analysis Approach 293
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 292
Feasibility of SIO2/Al2O3 tunnel dielectric for future Flash memories generations 291
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 291
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 291
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 290
Control of Brushless Motor with Hybrid Redundancy for Force Feedback in Steer-by-Wire Applications 290
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 290
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 290
Totale 35.135
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Categoria #
all - tutte 272.793
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 272.793
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20225.488 363 589 400 265 135 673 212 279 549 459 1.105 459
2022/20235.324 537 619 291 475 674 852 137 538 640 67 301 193
2023/20243.874 190 202 222 393 900 383 301 419 81 187 143 453
2024/202514.405 978 215 207 912 2.110 1.966 1.018 861 1.312 614 2.327 1.885
2025/202622.367 1.814 1.207 1.732 1.922 3.032 2.295 2.612 979 2.272 1.919 1.532 1.051
2026/2027843 843 0 0 0 0 0 0 0 0 0 0 0
Totale 74.403