statistiche ricercatore

Continente	#
NA - Nord America	2.044
AS - Asia	927
EU - Europa	637
SA - Sud America	148
AF - Africa	17
Continente sconosciuto - Info sul continente non disponibili	13
OC - Oceania	1
Totale	3.787

Nazione	#
US - Stati Uniti d'America	2.013
SG - Singapore	326
CN - Cina	242
GB - Regno Unito	236
BR - Brasile	123
HK - Hong Kong	98
SE - Svezia	93
VN - Vietnam	82
IT - Italia	71
DE - Germania	49
BD - Bangladesh	44
UA - Ucraina	39
TR - Turchia	38
RU - Federazione Russa	34
FR - Francia	33
FI - Finlandia	27
KR - Corea	23
BG - Bulgaria	18
IN - India	16
CA - Canada	13
MX - Messico	9
EC - Ecuador	8
AR - Argentina	7
MA - Marocco	7
RO - Romania	6
IE - Irlanda	5
PK - Pakistan	5
PL - Polonia	5
UZ - Uzbekistan	5
ID - Indonesia	4
JP - Giappone	4
TH - Thailandia	4
AE - Emirati Arabi Uniti	3
AL - Albania	3
BE - Belgio	3
EG - Egitto	3
ES - Italia	3
IR - Iran	3
KZ - Kazakistan	3
MY - Malesia	3
NL - Olanda	3
PH - Filippine	3
AT - Austria	2
BO - Bolivia	2
BZ - Belize	2
CY - Cipro	2
CZ - Repubblica Ceca	2
HN - Honduras	2
JM - Giamaica	2
KE - Kenya	2
LK - Sri Lanka	2
MD - Moldavia	2
PS - Palestinian Territory	2
PY - Paraguay	2
SY - Repubblica araba siriana	2
TW - Taiwan	2
VE - Venezuela	2
ZA - Sudafrica	2
AO - Angola	1
AU - Australia	1
AZ - Azerbaigian	1
BH - Bahrain	1
CL - Cile	1
CO - Colombia	1
DK - Danimarca	1
GT - Guatemala	1
IL - Israele	1
IQ - Iraq	1
JO - Giordania	1
KH - Cambogia	1
LA - Repubblica Popolare Democratica del Laos	1
LB - Libano	1
LV - Lettonia	1
MN - Mongolia	1
MU - Mauritius	1
NO - Norvegia	1
OM - Oman	1
PA - Panama	1
PE - Perù	1
SA - Arabia Saudita	1
SR - Suriname	1
SV - El Salvador	1
TN - Tunisia	1
Totale	3.774

Nome	#
Adsorption of Indium on an InAs wetting layer deposited on the GaAs(001) surface	366
Monte Carlo simulation of electron transport in Si/SiO2 superlattices	312
Effects of wetting layer structure on surface phase stability and on indium surface diffusion	301
Step energy and step interactions on the reconstructed GaAs(001) surface	301
Indium surface diffusion on InAs (2x4) reconstructed wetting layers on GaAs(001)	295
In adsorption and diffusion on in-rich (2×4) reconstructed InGaAs surfaces on GaAs(001)	288
Semiclassical and quantum transport in Si/SiO2 superlattices	280
Structural stability of clean GaAs nanowires grown along the [111] direction	278
Surface Effects on the Atomic and Electronic Structure of Unpassivated GaAs Nanowires	275
Monte Carlo analysis of electron heating in Si/SiO2 superlattices	243
InAs Epitaxy on GaAs(001): A Model Case of Strain-Driven Self-Assembling of Qunatum Dots	237
In adatom diffusion on InxGa1-xAs/GaAs(001): effects of strain, reconstruction and composition	231
Monte Carlo simulation of electron transport in Si/SiO2 superlattices: vertical transport enhanced by a parallel field	192
Erratum: Step energy and step interactions on the reconstructed GaAs(001) surface (Physical Review B - Condensed Matter and Materials Physics (2014) 90 (115314) DOI: 10.1103/PhysRevB.90.115314)	188
Totale	3.787

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	298	1	44	41	19	6	11	22	13	30	18	59	34
2022/2023	286	35	30	27	20	38	42	3	35	36	0	12	8
2023/2024	137	6	12	6	19	42	5	13	19	10	0	0	5
2024/2025	668	23	5	2	45	142	90	71	62	77	12	57	82
2025/2026	1.010	47	61	73	107	191	83	113	40	80	84	61	70
2026/2027	32	32	0	0	0	0	0	0	0	0	0	0	0
Totale													3.787