VERZELLESI, Giovanni
 Distribuzione geografica
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Continente #
NA - Nord America 32.005
AS - Asia 15.577
EU - Europa 14.695
SA - Sud America 1.861
AF - Africa 216
Continente sconosciuto - Info sul continente non disponibili 23
OC - Oceania 21
AN - Antartide 1
Totale 64.399
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Nazione #
US - Stati Uniti d'America 31.068
GB - Regno Unito 4.756
CN - Cina 4.734
SG - Singapore 4.629
SE - Svezia 3.118
HK - Hong Kong 1.989
IT - Italia 1.868
DE - Germania 1.825
BR - Brasile 1.465
VN - Vietnam 1.395
KR - Corea 799
CA - Canada 742
TR - Turchia 703
UA - Ucraina 622
FI - Finlandia 552
RU - Federazione Russa 533
FR - Francia 489
IN - India 310
BG - Bulgaria 256
AR - Argentina 137
BD - Bangladesh 137
JP - Giappone 132
NL - Olanda 128
ID - Indonesia 117
MX - Messico 112
IQ - Iraq 98
TW - Taiwan 87
PL - Polonia 81
IE - Irlanda 73
ZA - Sudafrica 66
EC - Ecuador 61
LT - Lituania 60
ES - Italia 59
BE - Belgio 56
CO - Colombia 53
PK - Pakistan 51
AT - Austria 50
MY - Malesia 43
AE - Emirati Arabi Uniti 42
PT - Portogallo 41
SA - Arabia Saudita 39
VE - Venezuela 38
CL - Cile 37
UZ - Uzbekistan 35
MA - Marocco 34
PH - Filippine 31
CH - Svizzera 29
PY - Paraguay 25
JO - Giordania 23
NP - Nepal 22
AZ - Azerbaigian 20
DZ - Algeria 19
PE - Perù 19
TH - Thailandia 18
KE - Kenya 17
AU - Australia 16
IL - Israele 16
DO - Repubblica Dominicana 15
EU - Europa 15
KZ - Kazakistan 15
TN - Tunisia 15
DK - Danimarca 14
CR - Costa Rica 13
EG - Egitto 13
RO - Romania 13
BO - Bolivia 12
JM - Giamaica 12
CZ - Repubblica Ceca 11
ET - Etiopia 11
LB - Libano 10
PA - Panama 10
PS - Palestinian Territory 10
UY - Uruguay 10
GR - Grecia 9
OM - Oman 9
AL - Albania 8
IR - Iran 8
BH - Bahrain 7
BY - Bielorussia 7
KG - Kirghizistan 7
NI - Nicaragua 7
SN - Senegal 7
HN - Honduras 6
LK - Sri Lanka 6
RS - Serbia 6
CY - Cipro 5
MD - Moldavia 5
NG - Nigeria 5
PR - Porto Rico 5
SK - Slovacchia (Repubblica Slovacca) 5
TT - Trinidad e Tobago 5
AO - Angola 4
CG - Congo 4
GE - Georgia 4
KW - Kuwait 4
LU - Lussemburgo 4
A2 - ???statistics.table.value.countryCode.A2??? 3
AM - Armenia 3
BA - Bosnia-Erzegovina 3
CI - Costa d'Avorio 3
Totale 64.323
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Città #
Fairfield 3.278
Southend 3.008
Santa Clara 2.896
Ashburn 2.650
Singapore 2.606
Woodbridge 2.261
Hefei 2.028
Hong Kong 1.947
Stockholm 1.791
Houston 1.756
Chandler 1.678
Seattle 1.312
Jacksonville 1.269
Ann Arbor 1.104
Cambridge 1.081
Wilmington 1.030
Dearborn 937
Chicago 838
Seoul 749
Beijing 720
London 712
Nyköping 664
San Jose 569
Munich 517
Montréal 515
Izmir 489
Ho Chi Minh City 437
Los Angeles 404
The Dalles 382
Mcallen 358
Hanoi 350
Helsinki 320
Modena 310
Council Bluffs 295
San Diego 295
Grafing 271
Princeton 270
Milan 262
Sofia 252
Eugene 222
New York 216
Lauterbourg 201
Buffalo 173
Des Moines 169
São Paulo 160
Boardman 151
Moscow 140
Bremen 129
Kent 119
Redwood City 114
Shanghai 102
Dallas 101
Falkenstein 88
Frankfurt am Main 85
Padova 85
Tokyo 84
Da Nang 83
Salt Lake City 82
Guangzhou 76
Rio de Janeiro 68
Jakarta 65
Orem 65
Dublin 64
Brooklyn 62
Nanjing 61
Chennai 60
Warsaw 59
Columbus 58
Toronto 57
Haiphong 56
Montreal 55
Tampa 53
Elk Grove Village 50
Atlanta 49
Phoenix 47
Bologna 45
Rome 45
Washington 43
Norwalk 42
Taipei 42
Brussels 41
San Francisco 40
Denver 39
Amsterdam 38
Baghdad 37
Belo Horizonte 36
Brantford 35
Kunming 35
Johannesburg 33
Manchester 33
Redondo Beach 33
Mexico City 32
Miano 32
Dhaka 31
San Mateo 31
Tashkent 30
Changsha 29
Reggio Emilia 29
Vancouver 29
Falls Church 28
Totale 47.008
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Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.086
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 2.018
GaN-based power devices: Physics, reliability, and perspectives 564
A wireless personal sensor node for real time dosimetry of interventional radiology operators 408
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 398
A 2.4-GHz wireless alpha-ray sensor for remote monitoring and spectroscopy 364
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 357
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 352
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 346
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 345
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 344
Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems 343
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 343
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors 342
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 335
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 332
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 330
Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors 326
A 4096-pixel MAPS device with on-chip data sparsification 324
Sensori per la rivelazione del Radon 323
A 180-nm CMOS Time-of-Flight 3-D Image Sensor 322
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 321
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 320
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 320
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 318
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 316
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 316
Alpha-particle detection based on the BJT detector and simple, IC-based readout electronics 312
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 310
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 310
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 308
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 307
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 307
A review of failure modes and mechanisms of GaN-based HEMTs 303
An improved all-p-type multiguard termination structure for silicon radiation detectors 302
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 301
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 298
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 296
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 295
Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector 294
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 293
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 289
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 288
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 288
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 288
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 287
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 287
Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics 285
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 284
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 281
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 281
Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes 280
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs 277
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs 276
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 272
Optimization of 0.25µm GaN HEMTs through numerical simulations 270
A test chip for the development of PIN-type silicon radiation detectors 270
Reliability of GaN high-electron-mobility transistors: state of the art and perspectives 270
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 270
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 269
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 269
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 269
Modeling challenges for high-efficiency visible light-emitting diodes 268
An all-p-type termination structure for silicon microstrip detectors 268
Trapping and High Field Related Issues in GaN Power HEMTs 268
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 265
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs 264
Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping 263
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 263
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 261
Design and characterization of current-assisted photonic demodulators in 0.18-um CMOS technology 260
Performance of a Radon Sensor Based on a BJT Detector on High-Resistivity Silicon 259
Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications 258
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 258
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 258
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 257
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 257
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 257
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 256
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 255
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 255
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 254
A compact method for measuring parasitic resistances in bipolar transistors 253
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 252
A novel silicon microstrip termination structure with all p-type multiguard and scribe-line implants 252
Insights into the off-state breakdown mechanisms in power GaN HEMTs 252
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 251
Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs 250
Breakdown investigation in GaN-based MIS-HEMTdevices 250
SPICE modelling of impact ionisation effects in silicon bipolar transistors 249
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs 247
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 247
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors 246
Low-noise readout channel with a novel dynamic signal compression for future X-FEL applications 245
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal 244
Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker 244
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs 244
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 244
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs 244
Charge particle detection properties of epitaxial 4H-SiC Schottky diodes 244
Totale 32.561
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Categoria #
all - tutte 229.710
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 229.710
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021812 0 0 0 0 0 0 0 0 0 0 398 414
2021/20224.917 212 550 461 237 132 532 247 188 491 397 1.025 445
2022/20234.675 491 492 267 393 581 771 79 451 572 60 192 326
2023/20242.688 141 180 158 299 609 188 168 358 104 99 59 325
2024/202512.042 715 129 94 819 1.970 1.524 770 887 1.094 551 1.892 1.597
2025/202617.677 1.115 1.188 1.698 1.914 2.194 1.453 1.857 901 3.632 1.345 380 0
Totale 64.877