VERZELLESI, Giovanni
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 37.942
AS - Asia 16.153
EU - Europa 15.331
SA - Sud America 1.939
Continente sconosciuto - Info sul continente non disponibili 512
AF - Africa 221
OC - Oceania 21
AN - Antartide 1
Totale 72.120
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 36.684
CN - Cina 4.807
GB - Regno Unito 4.805
SG - Singapore 4.688
SE - Svezia 3.120
IT - Italia 2.363
HK - Hong Kong 2.000
DE - Germania 1.836
BR - Brasile 1.517
VN - Vietnam 1.401
CA - Canada 899
KR - Corea 810
TR - Turchia 705
UA - Ucraina 628
FI - Finlandia 552
RU - Federazione Russa 538
FR - Francia 505
BD - Bangladesh 487
IN - India 319
BG - Bulgaria 258
JP - Giappone 144
AR - Argentina 142
NL - Olanda 136
ID - Indonesia 126
MX - Messico 123
TW - Taiwan 104
IQ - Iraq 98
PL - Polonia 85
IE - Irlanda 75
ES - Italia 69
ZA - Sudafrica 67
EC - Ecuador 66
BE - Belgio 64
CO - Colombia 63
LT - Lituania 60
PK - Pakistan 54
AT - Austria 50
MY - Malesia 47
AE - Emirati Arabi Uniti 45
CR - Costa Rica 43
PT - Portogallo 43
VE - Venezuela 42
SA - Arabia Saudita 39
CL - Cile 37
UZ - Uzbekistan 35
MA - Marocco 34
PH - Filippine 31
CH - Svizzera 29
JM - Giamaica 29
PY - Paraguay 26
JO - Giordania 23
HN - Honduras 22
NP - Nepal 22
TH - Thailandia 22
GT - Guatemala 21
AZ - Azerbaigian 20
DZ - Algeria 19
IL - Israele 19
NI - Nicaragua 19
PE - Perù 19
DK - Danimarca 18
KE - Kenya 17
TT - Trinidad e Tobago 17
AU - Australia 16
PR - Porto Rico 16
DO - Repubblica Dominicana 15
EU - Europa 15
KZ - Kazakistan 15
TN - Tunisia 15
SV - El Salvador 14
BO - Bolivia 13
EG - Egitto 13
RO - Romania 13
EE - Estonia 12
CZ - Repubblica Ceca 11
ET - Etiopia 11
PA - Panama 11
LB - Libano 10
PS - Palestinian Territory 10
UY - Uruguay 10
BB - Barbados 9
GR - Grecia 9
OM - Oman 9
AL - Albania 8
IR - Iran 8
BH - Bahrain 7
BY - Bielorussia 7
KG - Kirghizistan 7
SN - Senegal 7
CW - ???statistics.table.value.countryCode.CW??? 6
LK - Sri Lanka 6
RS - Serbia 6
CY - Cipro 5
GP - Guadalupe 5
HU - Ungheria 5
MD - Moldavia 5
NG - Nigeria 5
SK - Slovacchia (Repubblica Slovacca) 5
AO - Angola 4
BA - Bosnia-Erzegovina 4
Totale 71.533
Salva come PNG Salva come JPEG
Città #
Ashburn 4.265
Fairfield 3.279
Santa Clara 3.025
Southend 3.008
Singapore 2.629
Woodbridge 2.262
Hefei 2.028
Hong Kong 1.955
Stockholm 1.792
Houston 1.771
Chandler 1.678
San Jose 1.407
Seattle 1.329
Jacksonville 1.273
Ann Arbor 1.104
Cambridge 1.084
Wilmington 1.038
Council Bluffs 1.003
Dearborn 937
Chicago 872
Seoul 750
Beijing 728
London 713
Nyköping 664
Munich 517
Los Angeles 515
Montréal 515
Izmir 489
Ho Chi Minh City 439
The Dalles 382
Milan 378
Mcallen 358
Hanoi 351
Helsinki 320
Modena 320
San Diego 298
New York 282
Princeton 274
Grafing 271
Sofia 252
Eugene 222
Buffalo 219
Lauterbourg 201
São Paulo 185
Des Moines 169
Boardman 167
Dallas 142
Moscow 140
Bremen 129
Kent 121
Columbus 115
Redwood City 114
Shanghai 104
Tokyo 89
Toronto 89
Falkenstein 88
Frankfurt am Main 85
Padova 85
Salt Lake City 84
Da Nang 83
Brooklyn 81
Rome 80
Guangzhou 76
Montreal 73
Orem 70
Phoenix 69
Rio de Janeiro 69
Atlanta 65
Jakarta 65
Dublin 64
Nanjing 61
Bologna 60
Chennai 60
Warsaw 60
San Francisco 58
Washington 58
Tampa 57
Haiphong 56
Elk Grove Village 51
Miano 51
Denver 47
Taipei 47
Brussels 45
Charlotte 45
Norwalk 44
Amsterdam 39
Mexico City 39
Philadelphia 38
Saint Augustine 38
Baghdad 37
Belo Horizonte 36
Kunming 36
San Mateo 36
Brantford 35
Johannesburg 34
Manchester 34
Miami 34
Redondo Beach 34
Vancouver 34
Dhaka 33
Totale 51.235
Salva come PNG Salva come JPEG
Nome #
PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs 2.107
A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources 2.044
GaN-based power devices: Physics, reliability, and perspectives 655
A wireless personal sensor node for real time dosimetry of interventional radiology operators 433
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 430
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 404
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 400
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors 394
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 386
A 2.4-GHz wireless alpha-ray sensor for remote monitoring and spectroscopy 385
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 375
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 375
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 373
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 371
Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems 369
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 365
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 360
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 360
A 4096-pixel MAPS device with on-chip data sparsification 353
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 351
Sensori per la rivelazione del Radon 350
A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion 349
A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs 348
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes 343
Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors 343
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 341
A 180-nm CMOS Time-of-Flight 3-D Image Sensor 339
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 339
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 338
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 337
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 335
Alpha-particle detection based on the BJT detector and simple, IC-based readout electronics 333
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 333
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 332
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 332
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 332
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 328
A review of failure modes and mechanisms of GaN-based HEMTs 328
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 326
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 324
An improved all-p-type multiguard termination structure for silicon radiation detectors 324
Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes 324
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 324
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 321
Design and characterization of current-assisted photonic demodulators in 0.18-um CMOS technology 320
Reliability of GaN high-electron-mobility transistors: state of the art and perspectives 320
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 320
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 318
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION 317
Characterization and analysis of trap-related effects in AlGaN/GaN HEMTs 317
Optimization of 0.25µm GaN HEMTs through numerical simulations 316
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 310
Breakdown and low-temperature anomalous effects in 6H SiC JFETs 309
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs 309
Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector 309
Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs 308
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 307
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 307
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs 306
Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker 306
Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations 306
Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics 304
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 303
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 302
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 300
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY 297
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 297
Trapping and High Field Related Issues in GaN Power HEMTs 297
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part II-Fits and Extraction from Experimental Data 296
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 288
SPICE modelling of impact ionisation effects in silicon bipolar transistors 286
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs 286
Modeling challenges for high-efficiency visible light-emitting diodes 286
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 285
An all-p-type termination structure for silicon microstrip detectors 285
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 285
A test chip for the development of PIN-type silicon radiation detectors 284
Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping 283
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes 281
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 280
Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications 278
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS 277
ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements 276
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs 275
Breakdown investigation in GaN-based MIS-HEMTdevices 275
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 274
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 273
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 272
Performance of a Radon Sensor Based on a BJT Detector on High-Resistivity Silicon 271
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 271
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues 270
A novel silicon microstrip termination structure with all p-type multiguard and scribe-line implants 270
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 270
Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs 269
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 269
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs 269
A compact method for measuring parasitic resistances in bipolar transistors 268
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part I-Model Description and Validation 267
Insights into the off-state breakdown mechanisms in power GaN HEMTs 267
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs 266
Totale 35.570
Salva come PNG Salva come JPEG
Categoria #
all - tutte 261.620
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 261.620
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20223.694 0 0 0 237 132 532 247 188 491 397 1.025 445
2022/20234.675 491 492 267 393 581 771 79 451 572 60 192 326
2023/20242.688 141 180 158 299 609 188 168 358 104 99 59 325
2024/202512.042 715 129 94 819 1.970 1.524 770 887 1.094 551 1.892 1.597
2025/202619.434 1.115 1.188 1.698 1.914 2.194 1.453 1.857 901 3.632 1.345 1.257 880
2026/20275.486 680 1.207 1.831 1.768 0 0 0 0 0 0 0 0
Totale 72.120