TONINI, Rita
 Distribuzione geografica
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Continente #
NA - Nord America 12.100
EU - Europa 4.372
AS - Asia 3.909
SA - Sud America 393
Continente sconosciuto - Info sul continente non disponibili 71
AF - Africa 67
OC - Oceania 6
Totale 20.918
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Nazione #
US - Stati Uniti d'America 11.920
GB - Regno Unito 2.444
SG - Singapore 1.252
CN - Cina 1.111
HK - Hong Kong 467
SE - Svezia 415
VN - Vietnam 368
IT - Italia 346
DE - Germania 331
BR - Brasile 311
UA - Ucraina 197
RU - Federazione Russa 158
TR - Turchia 155
BD - Bangladesh 154
FR - Francia 142
FI - Finlandia 136
KR - Corea 124
CA - Canada 87
BG - Bulgaria 74
IN - India 68
JP - Giappone 37
MX - Messico 34
AR - Argentina 30
IQ - Iraq 20
NL - Olanda 19
TW - Taiwan 18
ZA - Sudafrica 18
AE - Emirati Arabi Uniti 17
BE - Belgio 17
ID - Indonesia 16
IE - Irlanda 16
PK - Pakistan 16
MY - Malesia 15
PL - Polonia 15
ES - Italia 14
PH - Filippine 14
CO - Colombia 13
EC - Ecuador 13
CR - Costa Rica 12
JM - Giamaica 11
MA - Marocco 11
CH - Svizzera 10
AT - Austria 8
DZ - Algeria 8
UZ - Uzbekistan 8
EU - Europa 6
PE - Perù 6
TN - Tunisia 6
VE - Venezuela 6
CL - Cile 5
EG - Egitto 5
GT - Guatemala 5
IL - Israele 5
JO - Giordania 5
AU - Australia 4
AZ - Azerbaigian 4
BY - Bielorussia 4
DO - Repubblica Dominicana 4
KE - Kenya 4
LT - Lituania 4
NI - Nicaragua 4
PA - Panama 4
PR - Porto Rico 4
PY - Paraguay 4
RS - Serbia 4
TT - Trinidad e Tobago 4
BO - Bolivia 3
GE - Georgia 3
HN - Honduras 3
PS - Palestinian Territory 3
SA - Arabia Saudita 3
SC - Seychelles 3
TH - Thailandia 3
BH - Bahrain 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
EE - Estonia 2
ET - Etiopia 2
HR - Croazia 2
IR - Iran 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
LK - Sri Lanka 2
LV - Lettonia 2
NG - Nigeria 2
NP - Nepal 2
NZ - Nuova Zelanda 2
OM - Oman 2
SN - Senegal 2
SV - El Salvador 2
UY - Uruguay 2
AF - Afghanistan, Repubblica islamica di 1
AG - Antigua e Barbuda 1
AL - Albania 1
AW - Aruba 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BN - Brunei Darussalam 1
BQ - ???statistics.table.value.countryCode.BQ??? 1
Totale 20.834
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Città #
Southend 2.057
Ashburn 1.653
Fairfield 1.256
Santa Clara 937
Singapore 787
Woodbridge 769
Houston 638
Chandler 509
Hefei 490
Ann Arbor 488
Hong Kong 456
Seattle 448
Cambridge 439
Wilmington 439
Jacksonville 435
San Jose 435
Dearborn 285
Council Bluffs 242
Nyköping 221
Los Angeles 212
London 168
Beijing 147
Buffalo 144
The Dalles 137
Seoul 116
Ho Chi Minh City 115
Chicago 92
Hanoi 92
San Diego 90
Izmir 79
Princeton 78
Des Moines 76
Sofia 73
Eugene 69
Milan 67
Bremen 60
New York 60
Helsinki 59
Lauterbourg 58
Modena 55
Grafing 51
Philadelphia 49
Norfolk 39
Columbus 33
Moscow 33
Munich 33
São Paulo 33
Salt Lake City 29
Redwood City 27
Shanghai 25
Orem 21
Phoenix 20
Dallas 19
Denver 19
Kent 19
Washington 19
Tampa 18
Boardman 17
Falls Church 17
Haiphong 17
Mexico City 17
Atlanta 16
Auburn Hills 16
Brantford 16
Da Nang 16
Brooklyn 15
Brussels 15
Dublin 15
Guangzhou 15
Montreal 15
Naples 15
Tokyo 15
Nanjing 14
Frankfurt am Main 13
Norwalk 13
Taipei 13
Toronto 13
North Bergen 12
Rio de Janeiro 12
Bolzano 11
Elk Grove Village 11
Newark 11
San José 11
Solihull 11
San Francisco 10
Verona 10
Hounslow 9
Miano 9
San Mateo 9
Warsaw 9
Baghdad 8
Belo Horizonte 8
Charlotte 8
Jakarta 8
Kingston 8
Kunming 8
Miami 8
Padova 8
Rome 8
Turku 8
Totale 16.036
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Nome #
Evolution of defect profiles in He-implanted silicon studied by slow positrons 450
Thermal desorption spectra from cavities in helium-implanted silicon 409
Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon 399
Helium-implanted silicon: A study of bubble precursors 396
Vacancy-gettering in silicon: Cavities and helium-implantation 389
Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry 379
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 369
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 365
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 361
Damage evolution in helium-hydrogen co-implanted (100) silicon 350
Copper–titanium thin film interaction 347
Hydrogen and helium bubbles in silicon 344
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 341
Some aspects of blistering and exfoliation of helium-hydrogen coimplanted (100) silicon 338
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 334
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 333
Transmission electron microscopy study of helium implanted silicon 331
Bandgap widening in quantum sieves 330
Helium in silicon: Thermal-desorption investigation of bubble precursors 330
Hydrogen determination in Si-rich oxide thin films 328
A fast technique for the quantitative analysis of channeling RBS spectra 328
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 325
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 324
Photoluminescence characterization of SiGe QW grown by MBE 321
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 321
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 319
Visible luminescence from silicon by hydrogen implantation and annealing treatments 318
In-situ time-resolved reflectivity: a technique useful to investigate solid-state transformations 315
High-dose helium-implanted single-crystal silicon: Annealing behavior 310
GISAXS Study of Hydrogen Implanted Silicon 307
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 306
Vibrational spectroscopy study of Ar+-ion irradiated Si-rich oxide films grown by plasma-enhanced chemical vapor deposition 305
DLTS and EPR study of defects in H implanted silicon 305
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 304
Hydrogen precipitation in highly oversaturated single-crystalline silicon 301
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 294
Structural properties of reactively sputtered W-Si-N thin films 294
Processing high-quality silicon for microstrip detectors 293
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 292
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 291
Infrared light emission due to radiation damage in crystalline silicon 290
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 290
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 290
Visible photoluminescence from He‐implanted silicon 289
Phase formations in Co-Silicon system 288
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 286
Visible light emission from silicon implanted and annealed SiO2 layers 283
Recrystallization of strainedlayers with various Gegradients and in the presence of impurities 283
Transmission Electron Microscopy study of Helium Implanted Silicon 282
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 281
Early stages of bubble formation in helium-implated (100) silicon 280
Using evidence from nanocavities to assess the vibrational properties of external surfaces 275
Radiation enhanced transport of hydrogen in SiO2 274
The effect of biaxial stress on the solid phase epitaxial crystallization of GexSi((1-x)) films 271
GISAXS study of structural relaxation in amorphous silicon 270
X-ray reflectivity study of hydrogen implanted silicon 269
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 269
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 266
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 260
Hydrogen injection and retention in nanocavities of single-crystalline silicon 260
GISAXS study of defects in He implanted silicon 256
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 248
EPR study of He-implanted Si 245
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 237
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen 223
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 214
Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation 211
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 152
Silicon interstitials generation during th exposure of Silicon to hydrogen plasma 97
Visible photoluminescence from silicon nanoconstrictions formed by heavy hydrogen implantation and annealing treatments 82
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Totale 20.918
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Categoria #
all - tutte 79.041
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 79.041
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022869 0 0 0 0 22 40 168 56 125 80 266 112
2022/20231.387 125 171 94 93 216 269 8 127 154 8 35 87
2023/2024629 20 48 28 144 152 33 31 81 7 9 11 65
2024/20252.837 105 22 23 205 545 412 173 223 298 96 370 365
2025/20265.023 285 266 609 429 550 474 596 270 556 407 318 263
2026/20271.351 138 273 393 523 24 0 0 0 0 0 0 0
Totale 20.918