TONINI, Rita
 Distribuzione geografica
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Continente #
NA - Nord America 9.743
EU - Europa 4.000
AS - Asia 2.998
SA - Sud America 275
AF - Africa 29
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 5
Totale 17.057
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Nazione #
US - Stati Uniti d'America 9.700
GB - Regno Unito 2.415
CN - Cina 1.050
SG - Singapore 1.026
SE - Svezia 414
HK - Hong Kong 412
DE - Germania 314
BR - Brasile 241
IT - Italia 190
UA - Ucraina 186
RU - Federazione Russa 149
TR - Turchia 143
VN - Vietnam 120
KR - Corea 112
FI - Finlandia 109
BG - Bulgaria 74
FR - Francia 59
IN - India 21
CA - Canada 19
BE - Belgio 17
AR - Argentina 16
BD - Bangladesh 15
JP - Giappone 14
NL - Olanda 13
TW - Taiwan 13
ID - Indonesia 12
IE - Irlanda 12
MX - Messico 11
ES - Italia 10
CH - Svizzera 9
IQ - Iraq 9
PL - Polonia 9
MY - Malesia 8
ZA - Sudafrica 8
AT - Austria 7
AE - Emirati Arabi Uniti 6
EU - Europa 6
MA - Marocco 6
CO - Colombia 5
UZ - Uzbekistan 5
DO - Repubblica Dominicana 4
EG - Egitto 4
IL - Israele 4
AU - Australia 3
GE - Georgia 3
LT - Lituania 3
PA - Panama 3
PE - Perù 3
PH - Filippine 3
PK - Pakistan 3
VE - Venezuela 3
BO - Bolivia 2
DZ - Algeria 2
EC - Ecuador 2
HR - Croazia 2
IR - Iran 2
JM - Giamaica 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
LV - Lettonia 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
PS - Palestinian Territory 2
RS - Serbia 2
SA - Arabia Saudita 2
SN - Senegal 2
BQ - ???statistics.table.value.countryCode.BQ??? 1
BS - Bahamas 1
BY - Bielorussia 1
CL - Cile 1
CY - Cipro 1
DJ - Gibuti 1
DK - Danimarca 1
GA - Gabon 1
GT - Guatemala 1
HN - Honduras 1
JO - Giordania 1
KE - Kenya 1
KG - Kirghizistan 1
KH - Cambogia 1
KZ - Kazakistan 1
LK - Sri Lanka 1
NP - Nepal 1
PY - Paraguay 1
RO - Romania 1
SI - Slovenia 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TN - Tunisia 1
UG - Uganda 1
UY - Uruguay 1
Totale 17.057
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Città #
Southend 2.057
Fairfield 1.256
Ashburn 890
Santa Clara 861
Woodbridge 769
Houston 635
Singapore 632
Chandler 508
Hefei 490
Ann Arbor 488
Seattle 442
Cambridge 439
Wilmington 437
Jacksonville 434
Hong Kong 407
Dearborn 285
Nyköping 221
Los Angeles 191
London 167
Buffalo 135
Beijing 117
Seoul 106
Council Bluffs 96
San Diego 90
Izmir 77
Chicago 76
Des Moines 76
Princeton 75
The Dalles 75
Sofia 73
Eugene 69
Bremen 59
Modena 55
Grafing 51
Philadelphia 46
Ho Chi Minh City 45
New York 35
Munich 33
Helsinki 32
Moscow 32
Redwood City 27
Salt Lake City 27
Columbus 26
São Paulo 26
Milan 25
Shanghai 23
Hanoi 22
Kent 19
Tampa 18
Falls Church 17
Auburn Hills 16
Brussels 15
Orem 15
Guangzhou 14
Nanjing 14
Atlanta 13
Boardman 13
San Jose 13
Taipei 13
Norwalk 12
Brooklyn 11
Dublin 11
Elk Grove Village 11
Dallas 10
Denver 10
Rio de Janeiro 10
Verona 10
Hounslow 9
Montreal 9
Phoenix 9
San Mateo 9
Belo Horizonte 8
Kunming 8
Naples 8
Padova 8
Tokyo 8
Turku 8
Da Nang 7
Haiphong 7
Indiana 7
Kilburn 7
Sterling 7
Stockholm 7
Frankfurt am Main 6
Jakarta 6
Jinan 6
Lancaster 6
Newark 6
Ribeirão Preto 6
Warsaw 6
Bologna 5
Boston 5
Brasília 5
Minneapolis 5
Reutlingen 5
San Francisco 5
Tashkent 5
Ankara 4
Baghdad 4
Birmingham 4
Totale 13.718
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Nome #
Evolution of defect profiles in He-implanted silicon studied by slow positrons 362
Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon 340
Vacancy-gettering in silicon: Cavities and helium-implantation 334
Thermal desorption spectra from cavities in helium-implanted silicon 315
Helium-implanted silicon: A study of bubble precursors 307
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 297
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 295
Visible luminescence from silicon by hydrogen implantation and annealing treatments 288
Bandgap widening in quantum sieves 286
Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry 283
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 282
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 281
Transmission electron microscopy study of helium implanted silicon 278
A fast technique for the quantitative analysis of channeling RBS spectra 277
Damage evolution in helium-hydrogen co-implanted (100) silicon 276
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 276
Helium in silicon: Thermal-desorption investigation of bubble precursors 275
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 272
Some aspects of blistering and exfoliation of helium-hydrogen coimplanted (100) silicon 270
Hydrogen and helium bubbles in silicon 270
Hydrogen determination in Si-rich oxide thin films 268
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 266
High-dose helium-implanted single-crystal silicon: Annealing behavior 264
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 263
Copper–titanium thin film interaction 261
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 260
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 259
Vibrational spectroscopy study of Ar+-ion irradiated Si-rich oxide films grown by plasma-enhanced chemical vapor deposition 259
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 258
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 257
Infrared light emission due to radiation damage in crystalline silicon 254
DLTS and EPR study of defects in H implanted silicon 253
In-situ time-resolved reflectivity: a technique useful to investigate solid-state transformations 249
Processing high-quality silicon for microstrip detectors 249
Hydrogen precipitation in highly oversaturated single-crystalline silicon 249
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 249
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 247
Photoluminescence characterization of SiGe QW grown by MBE 246
Transmission Electron Microscopy study of Helium Implanted Silicon 246
Visible photoluminescence from He‐implanted silicon 245
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 244
Structural properties of reactively sputtered W-Si-N thin films 244
Recrystallization of strainedlayers with various Gegradients and in the presence of impurities 243
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 240
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 238
Phase formations in Co-Silicon system 238
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 237
Radiation enhanced transport of hydrogen in SiO2 237
Using evidence from nanocavities to assess the vibrational properties of external surfaces 235
Early stages of bubble formation in helium-implated (100) silicon 229
Hydrogen injection and retention in nanocavities of single-crystalline silicon 226
GISAXS Study of Hydrogen Implanted Silicon 224
Visible light emission from silicon implanted and annealed SiO2 layers 221
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 220
X-ray reflectivity study of hydrogen implanted silicon 220
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 220
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 219
GISAXS study of structural relaxation in amorphous silicon 219
The effect of biaxial stress on the solid phase epitaxial crystallization of GexSi((1-x)) films 216
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 214
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 200
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 199
GISAXS study of defects in He implanted silicon 197
EPR study of He-implanted Si 196
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 186
Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation 180
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen 176
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 129
Silicon interstitials generation during th exposure of Silicon to hydrogen plasma 55
Visible photoluminescence from silicon nanoconstrictions formed by heavy hydrogen implantation and annealing treatments 52
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Totale 17.121
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Categoria #
all - tutte 65.583
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 65.583
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.516 0 0 0 0 0 297 180 210 87 411 248 83
2021/20221.432 38 220 233 72 22 40 168 56 125 80 266 112
2022/20231.387 125 171 94 93 216 269 8 127 154 8 35 87
2023/2024629 20 48 28 144 152 33 31 81 7 9 11 65
2024/20252.837 105 22 23 205 545 412 173 223 298 96 370 365
2025/20262.577 285 266 609 429 550 438 0 0 0 0 0 0
Totale 17.121