TONINI, Rita
 Distribuzione geografica
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Continente #
NA - Nord America 10.533
EU - Europa 4.196
AS - Asia 3.751
SA - Sud America 382
AF - Africa 64
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 6
Totale 18.939
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Nazione #
US - Stati Uniti d'America 10.445
GB - Regno Unito 2.428
SG - Singapore 1.238
CN - Cina 1.092
HK - Hong Kong 460
SE - Svezia 414
VN - Vietnam 368
DE - Germania 330
BR - Brasile 304
IT - Italia 213
UA - Ucraina 195
TR - Turchia 155
RU - Federazione Russa 151
FI - Finlandia 136
FR - Francia 135
KR - Corea 124
BG - Bulgaria 74
IN - India 68
CA - Canada 43
BD - Bangladesh 40
JP - Giappone 37
MX - Messico 29
AR - Argentina 28
IQ - Iraq 20
ZA - Sudafrica 18
AE - Emirati Arabi Uniti 17
BE - Belgio 17
TW - Taiwan 17
ID - Indonesia 16
IE - Irlanda 16
NL - Olanda 16
PK - Pakistan 16
PL - Polonia 15
MY - Malesia 14
PH - Filippine 13
CO - Colombia 12
EC - Ecuador 12
ES - Italia 11
MA - Marocco 11
CH - Svizzera 10
AT - Austria 8
DZ - Algeria 8
UZ - Uzbekistan 8
EU - Europa 6
PE - Perù 6
TN - Tunisia 6
VE - Venezuela 6
CL - Cile 5
EG - Egitto 5
JO - Giordania 5
AU - Australia 4
AZ - Azerbaigian 4
BY - Bielorussia 4
DO - Repubblica Dominicana 4
IL - Israele 4
KE - Kenya 4
LT - Lituania 4
PA - Panama 4
PY - Paraguay 4
RS - Serbia 4
BO - Bolivia 3
GE - Georgia 3
PS - Palestinian Territory 3
SA - Arabia Saudita 3
TH - Thailandia 3
BH - Bahrain 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
ET - Etiopia 2
HR - Croazia 2
IR - Iran 2
JM - Giamaica 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
LK - Sri Lanka 2
LV - Lettonia 2
NG - Nigeria 2
NP - Nepal 2
NZ - Nuova Zelanda 2
OM - Oman 2
SN - Senegal 2
UY - Uruguay 2
AF - Afghanistan, Repubblica islamica di 1
AL - Albania 1
BB - Barbados 1
BN - Brunei Darussalam 1
BQ - ???statistics.table.value.countryCode.BQ??? 1
BS - Bahamas 1
CY - Cipro 1
DJ - Gibuti 1
EE - Estonia 1
GA - Gabon 1
GN - Guinea 1
GR - Grecia 1
GT - Guatemala 1
HN - Honduras 1
HU - Ungheria 1
KG - Kirghizistan 1
KH - Cambogia 1
Totale 18.929
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Città #
Southend 2.057
Fairfield 1.256
Ashburn 1.147
Santa Clara 879
Singapore 783
Woodbridge 769
Houston 635
Chandler 508
Hefei 490
Ann Arbor 488
Hong Kong 451
Seattle 443
Cambridge 439
Wilmington 437
Jacksonville 434
San Jose 290
Dearborn 285
Nyköping 221
Los Angeles 198
London 168
Beijing 141
The Dalles 137
Buffalo 135
Seoul 116
Ho Chi Minh City 115
Council Bluffs 97
Hanoi 92
San Diego 90
Izmir 79
Chicago 78
Des Moines 76
Princeton 75
Sofia 73
Eugene 69
Bremen 59
Helsinki 59
Lauterbourg 58
Modena 55
Grafing 51
Philadelphia 46
New York 40
Moscow 33
Munich 33
São Paulo 32
Milan 28
Salt Lake City 28
Redwood City 27
Columbus 26
Shanghai 24
Orem 20
Kent 19
Washington 19
Tampa 18
Falls Church 17
Haiphong 17
Auburn Hills 16
Brantford 16
Da Nang 16
Brussels 15
Dublin 15
Guangzhou 15
Mexico City 15
Tokyo 15
Atlanta 14
Nanjing 14
Boardman 13
Frankfurt am Main 13
Taipei 13
Norwalk 12
Brooklyn 11
Dallas 11
Elk Grove Village 11
Montreal 11
Rio de Janeiro 11
Denver 10
Verona 10
Hounslow 9
Naples 9
Phoenix 9
San Mateo 9
Warsaw 9
Baghdad 8
Belo Horizonte 8
Jakarta 8
Kunming 8
Padova 8
San Francisco 8
Turku 8
Chennai 7
Indiana 7
Kilburn 7
Mumbai 7
Sterling 7
Stockholm 7
Tashkent 7
Bologna 6
Brasília 6
Can Tho 6
Jinan 6
Lancaster 6
Totale 14.917
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Nome #
Evolution of defect profiles in He-implanted silicon studied by slow positrons 410
Thermal desorption spectra from cavities in helium-implanted silicon 369
Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon 369
Vacancy-gettering in silicon: Cavities and helium-implantation 364
Helium-implanted silicon: A study of bubble precursors 355
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 331
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 331
Damage evolution in helium-hydrogen co-implanted (100) silicon 318
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 318
Transmission electron microscopy study of helium implanted silicon 317
Hydrogen and helium bubbles in silicon 314
Copper–titanium thin film interaction 311
Bandgap widening in quantum sieves 310
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 307
Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry 306
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 305
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 304
A fast technique for the quantitative analysis of channeling RBS spectra 302
Visible luminescence from silicon by hydrogen implantation and annealing treatments 302
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 299
Some aspects of blistering and exfoliation of helium-hydrogen coimplanted (100) silicon 298
Helium in silicon: Thermal-desorption investigation of bubble precursors 298
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 296
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 295
Hydrogen determination in Si-rich oxide thin films 294
In-situ time-resolved reflectivity: a technique useful to investigate solid-state transformations 292
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 291
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 286
Hydrogen precipitation in highly oversaturated single-crystalline silicon 285
High-dose helium-implanted single-crystal silicon: Annealing behavior 283
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 283
DLTS and EPR study of defects in H implanted silicon 281
Vibrational spectroscopy study of Ar+-ion irradiated Si-rich oxide films grown by plasma-enhanced chemical vapor deposition 277
Photoluminescence characterization of SiGe QW grown by MBE 276
Infrared light emission due to radiation damage in crystalline silicon 274
Processing high-quality silicon for microstrip detectors 273
Transmission Electron Microscopy study of Helium Implanted Silicon 270
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 270
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 269
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 269
Structural properties of reactively sputtered W-Si-N thin films 267
Visible photoluminescence from He‐implanted silicon 264
Recrystallization of strainedlayers with various Gegradients and in the presence of impurities 263
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 262
Phase formations in Co-Silicon system 261
Radiation enhanced transport of hydrogen in SiO2 259
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 258
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 258
Visible light emission from silicon implanted and annealed SiO2 layers 257
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 255
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 254
Using evidence from nanocavities to assess the vibrational properties of external surfaces 252
GISAXS Study of Hydrogen Implanted Silicon 250
GISAXS study of structural relaxation in amorphous silicon 249
Early stages of bubble formation in helium-implated (100) silicon 249
The effect of biaxial stress on the solid phase epitaxial crystallization of GexSi((1-x)) films 246
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 243
Hydrogen injection and retention in nanocavities of single-crystalline silicon 243
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 237
X-ray reflectivity study of hydrogen implanted silicon 236
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 220
EPR study of He-implanted Si 220
GISAXS study of defects in He implanted silicon 217
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 217
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 200
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen 196
Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation 191
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 139
Silicon interstitials generation during th exposure of Silicon to hydrogen plasma 76
Visible photoluminescence from silicon nanoconstrictions formed by heavy hydrogen implantation and annealing treatments 61
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Totale 19.003
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Categoria #
all - tutte 69.298
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 69.298
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021331 0 0 0 0 0 0 0 0 0 0 248 83
2021/20221.432 38 220 233 72 22 40 168 56 125 80 266 112
2022/20231.387 125 171 94 93 216 269 8 127 154 8 35 87
2023/2024629 20 48 28 144 152 33 31 81 7 9 11 65
2024/20252.837 105 22 23 205 545 412 173 223 298 96 370 365
2025/20264.459 285 266 609 429 550 474 596 270 556 407 17 0
Totale 19.003