BORGARINO, Mattia
 Distribuzione geografica
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Continente #
NA - Nord America 13.655
AS - Asia 6.793
EU - Europa 6.445
SA - Sud America 793
Continente sconosciuto - Info sul continente non disponibili 208
AF - Africa 121
OC - Oceania 13
Totale 28.028
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Nazione #
US - Stati Uniti d'America 13.320
GB - Regno Unito 2.135
CN - Cina 2.057
SG - Singapore 1.935
HK - Hong Kong 1.080
IT - Italia 1.007
DE - Germania 861
SE - Svezia 708
BR - Brasile 629
VN - Vietnam 530
FR - Francia 440
FI - Finlandia 291
UA - Ucraina 280
KR - Corea 266
RU - Federazione Russa 252
CA - Canada 244
TR - Turchia 238
BD - Bangladesh 169
BG - Bulgaria 132
IN - India 115
IE - Irlanda 69
NL - Olanda 63
JP - Giappone 57
AR - Argentina 56
ID - Indonesia 43
MX - Messico 43
IQ - Iraq 41
PK - Pakistan 35
BE - Belgio 34
ZA - Sudafrica 32
CO - Colombia 28
AT - Austria 27
PL - Polonia 26
PH - Filippine 25
ES - Italia 22
EC - Ecuador 19
LT - Lituania 19
KE - Kenya 18
AE - Emirati Arabi Uniti 17
EG - Egitto 17
MA - Marocco 17
SA - Arabia Saudita 17
RO - Romania 16
VE - Venezuela 16
JM - Giamaica 15
TW - Taiwan 15
CL - Cile 14
MY - Malesia 14
UZ - Uzbekistan 14
TH - Thailandia 13
AZ - Azerbaigian 12
JO - Giordania 12
IL - Israele 11
NP - Nepal 11
PY - Paraguay 11
KZ - Kazakistan 10
UY - Uruguay 10
TN - Tunisia 9
DZ - Algeria 8
PE - Perù 8
AU - Australia 7
CH - Svizzera 7
DK - Danimarca 7
EU - Europa 7
IR - Iran 7
AL - Albania 6
CR - Costa Rica 6
EE - Estonia 6
LB - Libano 6
NI - Nicaragua 6
NZ - Nuova Zelanda 6
OM - Oman 6
BH - Bahrain 5
ET - Etiopia 5
BB - Barbados 4
CZ - Repubblica Ceca 4
KG - Kirghizistan 4
MD - Moldavia 4
NO - Norvegia 4
PS - Palestinian Territory 4
SK - Slovacchia (Repubblica Slovacca) 4
AO - Angola 3
CY - Cipro 3
GR - Grecia 3
GT - Guatemala 3
HR - Croazia 3
KH - Cambogia 3
LA - Repubblica Popolare Democratica del Laos 3
LV - Lettonia 3
PR - Porto Rico 3
AM - Armenia 2
BO - Bolivia 2
CG - Congo 2
CI - Costa d'Avorio 2
CW - ???statistics.table.value.countryCode.CW??? 2
DO - Repubblica Dominicana 2
GE - Georgia 2
HN - Honduras 2
LK - Sri Lanka 2
ML - Mali 2
Totale 27.795
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Città #
Santa Clara 1.458
Southend 1.295
Ashburn 1.184
Singapore 1.155
Fairfield 1.122
Hong Kong 1.059
Hefei 907
Chandler 845
Woodbridge 715
Houston 683
Jacksonville 594
San Jose 586
Ann Arbor 457
Dearborn 390
Seattle 390
Wilmington 388
London 366
Nyköping 363
Cambridge 343
Beijing 303
Seoul 257
Los Angeles 205
Council Bluffs 194
Helsinki 184
Modena 177
Ho Chi Minh City 169
Munich 161
The Dalles 158
Dallas 145
San Diego 139
Chicago 138
Princeton 134
Sofia 129
Kent 128
Grafing 127
New York 127
Hanoi 124
Izmir 122
Milan 119
Montréal 118
Bremen 109
Mcallen 109
Berlin 105
Eugene 102
Boardman 99
Lauterbourg 90
Buffalo 84
Shanghai 84
Des Moines 65
Dublin 59
São Paulo 56
Bologna 55
Redwood City 54
Salt Lake City 53
Moscow 51
Reggio Emilia 44
Frankfurt am Main 41
Orem 39
Rome 35
Toronto 35
Brussels 34
Amsterdam 31
Da Nang 28
Yalova 27
Haiphong 25
Chennai 23
Montreal 23
Tokyo 23
Atlanta 22
Rio de Janeiro 22
Miano 21
Phoenix 21
Brooklyn 20
Columbus 20
Philadelphia 20
Baghdad 19
Guangzhou 19
Jakarta 19
Norwalk 19
Warsaw 19
Elk Grove Village 18
Naples 18
San Francisco 18
Lancaster 17
Manchester 17
Ottawa 17
Tampa 17
Nuremberg 16
Dhaka 15
Johannesburg 15
Mexico City 15
Mumbai 15
Nanjing 15
Osaka 15
Wuhan 15
Belo Horizonte 14
Hillsboro 14
Redondo Beach 14
Vienna 14
Boston 13
Totale 19.794
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Nome #
0.35um SiGe BiCMOS X-Band PLO 885
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's 669
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors 439
A 130nm CMOS Tunable Digital Frequency Divider for Dual-Band Microwave Radiometer 352
65 nm CMOS SSB mixer for UWB synthesiser 350
A Non-linear Noise Model of Bipolar Transistors for the Phase-Noise Performance Analysis of Microwave Oscillators 330
A 12 GHz 30 mW 130 nm CMOS rotary travelling wave voltage controlled oscillator 330
Appunti di Microelettronica 325
Noise properties in SiGe BiCMOS devices 325
15 GHz quadrature voltage controlled oscillator in 130 nm CMOS technology 323
SiGe BiCMOS X-Band Integrated Radiometer 321
A Low Power Ku Phase Locked Oscillator in Low Cost 130nm CMOS Technology 319
A K-band BiCMOS low duty-cycle resistive mixer 318
A 5.2mW Ku-Band CMOS Injection-Locked Frequency Doubler with Differential Input / Output 318
A broadband RF 65nm CMOS front-end for cable TV reception 309
An empirical bipolar device nonlinear noise modeling approach for large-signal microwave circuit analysis 308
System-on-Chip Microwave Radiometer for Thermal Remote Sensing and its Application to the Forest Fire Detection 298
An ULP and Very Efficient Adaptively Biased LDO Regulator for Harvesting Application 298
Esercizi di Elettronica Digitale 287
Investigation of the hot-carrier degradation in Si/SiGe HBT's by intrinsic low frequency noise source modeling 284
Low phase noise 130nm CMOS ring VCO 283
130nm CMOS SAR-ADC with Low Complexity Digital Control Logic 283
Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs 275
Reliability investigation in SiGe HBT’s 273
Low Phase Noise, Fully Integrated Monolithic VCO in X Band Based on HBT Technology 273
Comparison between RTW VCO and LC QVCO 12 GHz PLLs 273
High linearity CMOS mixer for domotic 5 GHz WLAN sliding-IF receivers 272
Identification procedures for the charge-controlled nonlinear noise model of microwave electron devices 268
Clock-less 8-bit SAR-ADC with delay-line based digital control circuit 263
A Single-Chip 5GHz WLAN Transmitter in 0.35um Si/SiGe BiCMOS Technology 262
Comparison between RTW VCO and LC QVC 12 GHz PLLs 259
Transimpedance amplifier based full low frequency noise characterization set-up for Si/SiGe HBTs 258
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 257
Reliability physics of compound semiconductor transistors for microwave applications 256
Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices 255
A comparison between HBt small-signal model optimization using a genetic algorithm and direct parametric extraction 255
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's 255
Failure mechanisms in compound semiconductor electron devices 254
Self-Oscillation Free 0.35um Si/SiGe BiCMOS X-Band Digital Frequency Divider 254
Hydrogen induced degradation in GaInP/GaAs HBTs revealed by low frequency noise measurements 252
Degradation based long-term reliability assessment for electronic components in submarine applications 252
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors 250
15GHz Dual-modulus 130nm CMOS Digital Frequency Divider 247
Ku-Band Radiometer Antenna Characterization in University Test Facilities 246
Topology investigation for the low frequency noise compact modelling of bipolar transistors 245
Microstrip Array Antenna Design for a Radiometric Ground-Based Fire Detection Application 244
Noise behavior in SiGe devices 244
Gate-lag effects in AlGaAs/GaAs power HFET's 244
Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors 244
Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors 243
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs 241
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation 240
HBT small-signal model extraction using a genetic algorithm 237
X-band silicon integrated radiometer 234
Low Noise Considerations in SiGe BiCMOS Technology for RF Applications 231
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's 230
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's 227
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's 225
Low-Cost Integrated Microwave Radiometer Front-End for Industrial Applications 225
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs 224
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation 222
A Phase Noise Performance Study of 15 GHz Phase Locked Loop in 130nm CMOS Technology for DVB-S Application 222
Design of RFIC's in 0.35um Si/SiGe BiCMOS Technology for a 5GHz Domotic Transmitter 221
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 218
C Band DROs Using Microwave Bipolar Devices 218
Investigation of the burn-in effect in microwave GaInP/GaAs HBTs by means of numerical simulations 217
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 215
Building Blocks for a 5GHz WLAN Transmitter in 0.35mm Si/SiGe BiCMOS 212
On the limitations of transipedance amplifiers as tools for low-frequency noise characterization 208
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS 208
On the VCO/Frequency Divider Interface in Cryogenic CMOS PLL for Quantum Computing Applications 206
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. 203
Low Noise, Low Interference Automated Bias Networks for Low Frequency Noise Characterization Set-Up's 202
Low frequency noise characterization and modeling of microwave bipolar devices : application to the design of low phase noise oscillator 202
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's 201
Negative Vbe shift due to base dopant outdiffusion in DHBT 200
On the Transimpedance Amplifiers in the Low frequency Noise Characterizarion 200
Mélamgeur résistif à sous-échantillonnage dans la bande 46-65 GHz intégré en technologie BiCMOS 0.13 µm 200
Microwave large-signal effects on the low-frequency noise characteristics of GaInP/GaAs HBTs 199
The low frequency noise in electron devices: an engineering sight 197
Hot Carrier Effects in Si/SiGe HBT's 195
The effect of the base dopant concentration on the stability of Be-doped AlGaAs/GaAs HBTs devices 191
Electrical and thermal simulation of local effects for electromigration 191
Ku-Band receiver functional blocks 189
Ku-Band PLL functional blocks 188
Low Frequency Noise in Microelectronics 187
Circuit-Based Compact Model of Electron Spin Qubit 187
Non-linear Measurement-Based Noise Models of Electron Devices for Low Phase-Noise Oscillator Design 186
High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs 180
Semi-Automated Experimental Set-Up CAD-oriented Low Frequency Noise Modeling of Bipolar Transistors 179
Low-Frequency Noise Characterisation of AlGaAs/GaAs HBT’s 172
The influence of the emitter orientation on the DC and low frequency noise characteristics of GaInP/GaAs HBTs 159
Empirical Nonlinear Noise Models of Field Effect Devices for Microwave Circuit Large-Signal Noise Analysis 159
Reliability issues in compound semiconductor heterojunction devices 156
Demystifying Quantum Gate Fidelity for Electronics Engineers 153
Reliability of Gaas-based HBTs 153
Experimental evaluation of the minimum detectable outdiffusion length for AlGaAs/GaAs HBTs 152
Indoor field-trial in X band of a photonics-based multiband radar on a packaged silicon chip 152
Self-oscillation free 0.35 μm Si/SiGe BiCMOS X-band digital frequency divider 148
Cryo-CMOS Multi-Frequency Modulator for 2-Qubit Controller 147
Totale 25.036
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Categoria #
all - tutte 104.047
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 104.047
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.043 0 262 148 100 74 229 122 99 229 159 388 233
2022/20232.294 306 261 134 253 304 333 62 167 332 34 60 48
2023/20241.578 48 94 185 123 372 169 63 228 38 57 20 181
2024/20255.419 197 72 86 321 940 659 347 407 703 141 630 916
2025/20268.053 552 585 859 851 902 607 957 369 733 886 442 310
2026/2027273 257 16 0 0 0 0 0 0 0 0 0 0
Totale 28.028