BORGARINO, Mattia
 Distribuzione geografica
Continente #
NA - Nord America 16.118
AS - Asia 6.873
EU - Europa 6.670
SA - Sud America 811
Continente sconosciuto - Info sul continente non disponibili 224
AF - Africa 136
OC - Oceania 14
Totale 30.846
Nazione #
US - Stati Uniti d'America 15.596
GB - Regno Unito 2.156
CN - Cina 2.072
SG - Singapore 1.939
IT - Italia 1.131
HK - Hong Kong 1.083
DE - Germania 873
SE - Svezia 708
BR - Brasile 639
VN - Vietnam 533
FR - Francia 453
CA - Canada 298
FI - Finlandia 293
RU - Federazione Russa 286
UA - Ucraina 285
KR - Corea 267
TR - Turchia 240
BD - Bangladesh 174
BG - Bulgaria 132
IN - India 118
IE - Irlanda 70
NL - Olanda 67
JP - Giappone 57
AR - Argentina 56
ID - Indonesia 45
MX - Messico 45
IQ - Iraq 41
IL - Israele 40
PK - Pakistan 37
BE - Belgio 36
CO - Colombia 34
ZA - Sudafrica 32
CR - Costa Rica 28
PL - Polonia 28
AT - Austria 27
ES - Italia 26
NI - Nicaragua 25
PH - Filippine 25
JM - Giamaica 21
SA - Arabia Saudita 21
EC - Ecuador 19
GT - Guatemala 19
KE - Kenya 19
LT - Lituania 19
PR - Porto Rico 19
SV - El Salvador 19
AE - Emirati Arabi Uniti 17
CW - ???statistics.table.value.countryCode.CW??? 17
EG - Egitto 17
MA - Marocco 17
VE - Venezuela 17
RO - Romania 16
TW - Taiwan 16
CL - Cile 15
MY - Malesia 15
TH - Thailandia 15
SC - Seychelles 14
UZ - Uzbekistan 14
AZ - Azerbaigian 12
GP - Guadalupe 12
JO - Giordania 12
HN - Honduras 11
NP - Nepal 11
PY - Paraguay 11
KZ - Kazakistan 10
UY - Uruguay 10
TN - Tunisia 9
TT - Trinidad e Tobago 9
AU - Australia 8
DK - Danimarca 8
DZ - Algeria 8
PE - Perù 8
CH - Svizzera 7
EU - Europa 7
IR - Iran 7
AL - Albania 6
EE - Estonia 6
LB - Libano 6
NZ - Nuova Zelanda 6
OM - Oman 6
AM - Armenia 5
BB - Barbados 5
BH - Bahrain 5
ET - Etiopia 5
CZ - Repubblica Ceca 4
KG - Kirghizistan 4
MD - Moldavia 4
NO - Norvegia 4
PS - Palestinian Territory 4
SK - Slovacchia (Repubblica Slovacca) 4
AO - Angola 3
CY - Cipro 3
GR - Grecia 3
HR - Croazia 3
KH - Cambogia 3
LA - Repubblica Popolare Democratica del Laos 3
LV - Lettonia 3
BO - Bolivia 2
BS - Bahamas 2
CG - Congo 2
Totale 30.602
Città #
Ashburn 1.881
Santa Clara 1.480
Southend 1.295
Singapore 1.159
Fairfield 1.122
Hong Kong 1.062
Hefei 907
Chandler 845
San Jose 739
Woodbridge 715
Houston 687
Council Bluffs 604
Jacksonville 597
Ann Arbor 457
Seattle 393
Wilmington 392
Dearborn 390
London 367
Nyköping 363
Cambridge 343
Beijing 304
Seoul 257
Los Angeles 227
Helsinki 186
Modena 180
Dallas 178
Ho Chi Minh City 170
Munich 161
The Dalles 158
Milan 155
Chicago 149
New York 143
San Diego 141
Princeton 138
Kent 129
Sofia 129
Grafing 127
Hanoi 126
Izmir 122
Montréal 118
Bremen 109
Mcallen 109
Berlin 105
Boardman 103
Eugene 102
Buffalo 100
Lauterbourg 90
Shanghai 84
Des Moines 65
São Paulo 64
Bologna 59
Dublin 59
Salt Lake City 56
Redwood City 54
Moscow 51
Norfolk 50
Rome 46
Reggio Emilia 44
Orem 43
Columbus 42
Frankfurt am Main 42
Phoenix 40
Toronto 39
Brussels 34
Montreal 33
Amsterdam 32
Atlanta 29
Da Nang 28
Brooklyn 27
Yalova 27
San José 26
Haiphong 25
Managua 25
Naples 25
San Francisco 24
Chennai 23
Philadelphia 23
Tokyo 23
New Orleans 22
Rio de Janeiro 22
Miano 21
Tampa 21
Boston 20
Baghdad 19
Denver 19
Guangzhou 19
Jakarta 19
Manchester 19
Norwalk 19
Warsaw 19
Elk Grove Village 18
Lancaster 17
Ottawa 17
Dhaka 16
Mexico City 16
North Charleston 16
Nuremberg 16
Willemstad 16
Guatemala City 15
Johannesburg 15
Totale 21.457
Nome #
0.35um SiGe BiCMOS X-Band PLO 916
The Correlation Resistance for Low-Frequency Noise Compact Modeling of Si/SiGe HBT's 707
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors 453
A 130nm CMOS Tunable Digital Frequency Divider for Dual-Band Microwave Radiometer 380
65 nm CMOS SSB mixer for UWB synthesiser 378
Appunti di Microelettronica 357
A 5.2mW Ku-Band CMOS Injection-Locked Frequency Doubler with Differential Input / Output 353
A Non-linear Noise Model of Bipolar Transistors for the Phase-Noise Performance Analysis of Microwave Oscillators 349
SiGe BiCMOS X-Band Integrated Radiometer 347
A K-band BiCMOS low duty-cycle resistive mixer 347
A 12 GHz 30 mW 130 nm CMOS rotary travelling wave voltage controlled oscillator 346
A Low Power Ku Phase Locked Oscillator in Low Cost 130nm CMOS Technology 345
Noise properties in SiGe BiCMOS devices 339
15 GHz quadrature voltage controlled oscillator in 130 nm CMOS technology 333
An empirical bipolar device nonlinear noise modeling approach for large-signal microwave circuit analysis 332
A broadband RF 65nm CMOS front-end for cable TV reception 330
Low Phase Noise, Fully Integrated Monolithic VCO in X Band Based on HBT Technology 326
Investigation of the hot-carrier degradation in Si/SiGe HBT's by intrinsic low frequency noise source modeling 320
System-on-Chip Microwave Radiometer for Thermal Remote Sensing and its Application to the Forest Fire Detection 318
An ULP and Very Efficient Adaptively Biased LDO Regulator for Harvesting Application 317
Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs 308
Esercizi di Elettronica Digitale 307
Low phase noise 130nm CMOS ring VCO 303
130nm CMOS SAR-ADC with Low Complexity Digital Control Logic 302
Comparison between RTW VCO and LC QVCO 12 GHz PLLs 296
High linearity CMOS mixer for domotic 5 GHz WLAN sliding-IF receivers 293
Reliability investigation in SiGe HBT’s 290
Comparison between RTW VCO and LC QVC 12 GHz PLLs 289
Transimpedance amplifier based full low frequency noise characterization set-up for Si/SiGe HBTs 287
Identification procedures for the charge-controlled nonlinear noise model of microwave electron devices 282
A Single-Chip 5GHz WLAN Transmitter in 0.35um Si/SiGe BiCMOS Technology 282
Reliability physics of compound semiconductor transistors for microwave applications 281
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors 280
Ku-Band Radiometer Antenna Characterization in University Test Facilities 279
A comparison between HBt small-signal model optimization using a genetic algorithm and direct parametric extraction 278
High electric field induced degradation of the DC characteristics in Si/SiGe HEMT's 278
Hydrogen induced degradation in GaInP/GaAs HBTs revealed by low frequency noise measurements 278
Clock-less 8-bit SAR-ADC with delay-line based digital control circuit 276
Noise behavior in SiGe devices 275
Building Blocks for a 5GHz WLAN Transmitter in 0.35mm Si/SiGe BiCMOS 275
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 275
Failure mechanisms in compound semiconductor electron devices 272
Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices 272
Gate-lag effects in AlGaAs/GaAs power HFET's 271
Self-Oscillation Free 0.35um Si/SiGe BiCMOS X-Band Digital Frequency Divider 269
Degradation based long-term reliability assessment for electronic components in submarine applications 269
Topology investigation for the low frequency noise compact modelling of bipolar transistors 264
15GHz Dual-modulus 130nm CMOS Digital Frequency Divider 264
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 261
Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs 260
Full direct low frequency noise characterization of GaAs heterojunction bipolar transistors 260
HBT small-signal model extraction using a genetic algorithm 259
Microstrip Array Antenna Design for a Radiometric Ground-Based Fire Detection Application 257
Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors 257
A Phase Noise Performance Study of 15 GHz Phase Locked Loop in 130nm CMOS Technology for DVB-S Application 256
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's 253
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation 253
Low Noise Considerations in SiGe BiCMOS Technology for RF Applications 251
X-band silicon integrated radiometer 251
Low-Cost Integrated Microwave Radiometer Front-End for Industrial Applications 249
Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBT's 244
Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation 242
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's 241
Design of RFIC's in 0.35um Si/SiGe BiCMOS Technology for a 5GHz Domotic Transmitter 240
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 240
The effect of Hot Electron Stress on the DC and Microwave Characteristics of GaAs-PHEMTs and InP-HEMTs 239
Investigation of the burn-in effect in microwave GaInP/GaAs HBTs by means of numerical simulations 233
C Band DROs Using Microwave Bipolar Devices 232
The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTS 232
On the VCO/Frequency Divider Interface in Cryogenic CMOS PLL for Quantum Computing Applications 232
Mélamgeur résistif à sous-échantillonnage dans la bande 46-65 GHz intégré en technologie BiCMOS 0.13 µm 231
Negative Vbe shift due to base dopant outdiffusion in DHBT 229
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. 225
High base current ideality factors due to trap-assisted band-to-band tunneling in AlGaAs/GaAs HBTs 223
On the limitations of transipedance amplifiers as tools for low-frequency noise characterization 223
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's 221
The low frequency noise in electron devices: an engineering sight 219
Microwave large-signal effects on the low-frequency noise characteristics of GaInP/GaAs HBTs 217
Low Noise, Low Interference Automated Bias Networks for Low Frequency Noise Characterization Set-Up's 215
Non-linear Measurement-Based Noise Models of Electron Devices for Low Phase-Noise Oscillator Design 214
Electrical and thermal simulation of local effects for electromigration 213
On the Transimpedance Amplifiers in the Low frequency Noise Characterizarion 213
Low frequency noise characterization and modeling of microwave bipolar devices : application to the design of low phase noise oscillator 213
The effect of the base dopant concentration on the stability of Be-doped AlGaAs/GaAs HBTs devices 211
Hot Carrier Effects in Si/SiGe HBT's 209
Circuit-Based Compact Model of Electron Spin Qubit 206
Ku-Band PLL functional blocks 203
Low Frequency Noise in Microelectronics 202
Ku-Band receiver functional blocks 200
Semi-Automated Experimental Set-Up CAD-oriented Low Frequency Noise Modeling of Bipolar Transistors 190
Low-Frequency Noise Characterisation of AlGaAs/GaAs HBT’s 188
The influence of the emitter orientation on the DC and low frequency noise characteristics of GaInP/GaAs HBTs 180
Indoor field-trial in X band of a photonics-based multiband radar on a packaged silicon chip 178
Correlation between the burn-in effect and the extrinsic base surface quality in C-doped GaInP/GaAs HBTs 177
Reliability issues in compound semiconductor heterojunction devices 176
Demystifying Quantum Gate Fidelity for Electronics Engineers 175
Reliability of Gaas-based HBTs 175
Self-oscillation free 0.35 μm Si/SiGe BiCMOS X-band digital frequency divider 173
Experimental evaluation of the minimum detectable outdiffusion length for AlGaAs/GaAs HBTs 170
Empirical Nonlinear Noise Models of Field Effect Devices for Microwave Circuit Large-Signal Noise Analysis 170
Totale 27.269
Categoria #
all - tutte 113.699
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 113.699


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.533 0 0 0 0 74 229 122 99 229 159 388 233
2022/20232.294 306 261 134 253 304 333 62 167 332 34 60 48
2023/20241.578 48 94 185 123 372 169 63 228 38 57 20 181
2024/20255.419 197 72 86 321 940 659 347 407 703 141 630 916
2025/20268.053 552 585 859 851 902 607 957 369 733 886 442 310
2026/20273.091 257 502 837 1.165 330 0 0 0 0 0 0 0
Totale 30.846