statistiche ricercatore

Continente	#
NA - Nord America	1.727
AS - Asia	705
EU - Europa	570
SA - Sud America	73
Continente sconosciuto - Info sul continente non disponibili	17
AF - Africa	10
Totale	3.102

Nazione	#
US - Stati Uniti d'America	1.692
CN - Cina	226
GB - Regno Unito	215
SG - Singapore	212
SE - Svezia	104
HK - Hong Kong	82
VN - Vietnam	60
IT - Italia	57
BR - Brasile	54
DE - Germania	50
TR - Turchia	37
UA - Ucraina	37
KR - Corea	32
FI - Finlandia	26
RU - Federazione Russa	24
CA - Canada	18
FR - Francia	18
BG - Bulgaria	13
BD - Bangladesh	11
IN - India	11
JP - Giappone	10
AR - Argentina	9
NL - Olanda	7
MX - Messico	6
PL - Polonia	6
IQ - Iraq	4
PK - Pakistan	4
CO - Colombia	3
ES - Italia	3
HN - Honduras	3
ZA - Sudafrica	3
AT - Austria	2
AZ - Azerbaigian	2
CR - Costa Rica	2
EC - Ecuador	2
IE - Irlanda	2
LK - Sri Lanka	2
LT - Lituania	2
MA - Marocco	2
NP - Nepal	2
OM - Oman	2
PA - Panama	2
PY - Paraguay	2
TN - Tunisia	2
AM - Armenia	1
AO - Angola	1
BE - Belgio	1
CH - Svizzera	1
CU - Cuba	1
CY - Cipro	1
EG - Egitto	1
GE - Georgia	1
GT - Guatemala	1
IL - Israele	1
JM - Giamaica	1
KE - Kenya	1
KG - Kirghizistan	1
LA - Repubblica Popolare Democratica del Laos	1
LU - Lussemburgo	1
MY - Malesia	1
PE - Perù	1
PR - Porto Rico	1
PT - Portogallo	1
SA - Arabia Saudita	1
TW - Taiwan	1
UY - Uruguay	1
VE - Venezuela	1
Totale	3.086

Nome	#
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs	351
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)	303
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC	280
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs	273
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs	266
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors	264
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs	258
Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s	236
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs	234
Experimental and simulated gate lag transients in unpassivated GaN/AlGaN/GaN HEMTs	221
Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs	211
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs	205
Totale	3.102

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	156	0	0	0	15	4	17	14	4	16	20	41	25
2022/2023	270	36	40	12	34	12	67	4	22	21	4	6	12
2023/2024	108	7	5	5	18	23	5	5	22	1	1	1	15
2024/2025	541	31	2	5	44	99	79	39	37	44	10	82	69
2025/2026	738	45	62	49	72	102	61	67	26	103	43	57	51
2026/2027	193	17	43	79	54	0	0	0	0	0	0	0	0
Totale													3.102