CHINI, Alessandro
 Distribuzione geografica
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Continente #
NA - Nord America 29.944
AS - Asia 13.486
EU - Europa 9.887
SA - Sud America 1.548
Continente sconosciuto - Info sul continente non disponibili 519
AF - Africa 191
OC - Oceania 20
Totale 55.595
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Nazione #
US - Stati Uniti d'America 29.427
SG - Singapore 3.822
CN - Cina 3.657
GB - Regno Unito 2.977
HK - Hong Kong 1.941
IT - Italia 1.890
VN - Vietnam 1.221
SE - Svezia 1.183
BR - Brasile 1.172
DE - Germania 989
KR - Corea 611
FR - Francia 604
RU - Federazione Russa 502
UA - Ucraina 445
FI - Finlandia 435
TR - Turchia 427
IN - India 380
BD - Bangladesh 373
CA - Canada 250
BG - Bulgaria 209
TW - Taiwan 197
JP - Giappone 183
ID - Indonesia 143
NL - Olanda 117
AR - Argentina 114
IQ - Iraq 88
MX - Messico 87
PL - Polonia 82
IE - Irlanda 79
BE - Belgio 74
ES - Italia 70
CO - Colombia 66
ZA - Sudafrica 65
EC - Ecuador 56
PK - Pakistan 55
UZ - Uzbekistan 45
AE - Emirati Arabi Uniti 39
SA - Arabia Saudita 38
LT - Lituania 37
CL - Cile 36
PH - Filippine 35
CR - Costa Rica 32
VE - Venezuela 31
AT - Austria 30
MA - Marocco 30
MY - Malesia 29
CH - Svizzera 27
JM - Giamaica 27
NP - Nepal 25
JO - Giordania 23
PE - Perù 23
DK - Danimarca 22
IR - Iran 22
PY - Paraguay 21
KE - Kenya 19
AU - Australia 17
EG - Egitto 16
HN - Honduras 16
RO - Romania 16
TH - Thailandia 16
TN - Tunisia 16
TT - Trinidad e Tobago 15
EU - Europa 14
GR - Grecia 14
IL - Israele 14
PA - Panama 14
DZ - Algeria 13
SV - El Salvador 13
UY - Uruguay 13
BH - Bahrain 12
DO - Repubblica Dominicana 12
GT - Guatemala 12
NI - Nicaragua 12
PT - Portogallo 12
BO - Bolivia 11
BY - Bielorussia 10
KZ - Kazakistan 10
OM - Oman 10
AZ - Azerbaigian 9
AL - Albania 8
CZ - Repubblica Ceca 8
EE - Estonia 8
GP - Guadalupe 7
LB - Libano 7
PR - Porto Rico 7
RS - Serbia 7
ET - Etiopia 6
SK - Slovacchia (Repubblica Slovacca) 6
SN - Senegal 6
AM - Armenia 5
BB - Barbados 5
KW - Kuwait 5
SY - Repubblica araba siriana 5
A2 - ???statistics.table.value.countryCode.A2??? 4
BA - Bosnia-Erzegovina 4
CY - Cipro 4
GE - Georgia 4
KG - Kirghizistan 4
LA - Repubblica Popolare Democratica del Laos 4
LK - Sri Lanka 4
Totale 55.017
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Città #
Ashburn 3.279
Fairfield 2.536
Santa Clara 2.477
Singapore 2.241
Southend 1.965
Hong Kong 1.854
Woodbridge 1.617
Chandler 1.437
Houston 1.352
Hefei 1.252
San Jose 1.187
Council Bluffs 1.056
Seattle 999
Wilmington 887
Cambridge 835
Jacksonville 823
Ann Arbor 769
Dearborn 673
Nyköping 664
Beijing 623
London 541
Seoul 443
Milan 373
Los Angeles 366
Ho Chi Minh City 329
Hanoi 315
Chicago 312
Helsinki 268
New York 265
The Dalles 251
Kent 229
Modena 211
Izmir 210
Princeton 209
San Diego 203
Sofia 202
Eugene 183
Buffalo 169
Lauterbourg 169
Boardman 165
Des Moines 138
Dallas 135
Shanghai 119
Moscow 116
Columbus 114
Jakarta 98
São Paulo 97
Atlanta 85
Frankfurt am Main 83
Tokyo 83
Rome 82
Redwood City 80
Padova 79
Munich 76
Dublin 75
Guangzhou 72
Grafing 70
Taipei 67
Toronto 66
Salt Lake City 62
Wallingford 62
Brooklyn 61
Nanjing 60
Phoenix 59
Da Nang 58
Bengaluru 56
Bologna 53
Orem 52
Haiphong 51
Brussels 50
Washington 48
Dong Ket 46
Chennai 43
Warsaw 43
San Francisco 42
Tashkent 40
Denver 39
Baghdad 38
Paris 38
Montreal 37
Rio de Janeiro 37
Reggio Emilia 36
Bremen 35
Hsinchu 35
Miano 35
Johannesburg 34
Norwalk 34
Redondo Beach 34
Parma 33
Turin 33
Boston 31
Changsha 31
Stockholm 30
Tampa 30
Amsterdam 29
Mexico City 29
Philadelphia 28
Brasília 27
Jinan 27
Miami 27
Totale 37.347
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Nome #
GaN-based power devices: Physics, reliability, and perspectives 654
p-GaN/AlGaN/GaN Enhancement-Mode HEMTs 653
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 430
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 401
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 386
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 373
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 365
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 360
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 360
N-polar GaN/AlGaN/GaN high electron mobility transistors 353
Analytical Model for Power Switching GaN-Based HEMT Design 353
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 351
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 344
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 340
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 337
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 335
A C-Band High-Dynamic Range GaN HEMT Low-Noise Amplifier 334
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate 333
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 333
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 332
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 332
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 326
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 324
The Italian perspectives on the application of GaN technology in future SAR and RADAR systems 324
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements 322
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 320
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 318
Optimization of 0.25µm GaN HEMTs through numerical simulations 316
Traps localization and analysis in GaN HEMTs 314
Parasitic effects and long term stability of InP-based HEMTs 313
Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures 312
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) 311
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 308
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 307
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design 307
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 307
2.1 A/mm current density AlGaN/GaN HEMT 306
Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs 304
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 304
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT 304
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 303
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 302
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 302
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 301
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 301
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 300
P-GaN/AlGaN/GaN high electron mobility transistors 300
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates 298
Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs 297
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 297
Trapping and High Field Related Issues in GaN Power HEMTs 297
Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design 295
A novel GaN HEMT degradation mechanism observed during HTST test 295
Field plate related reliability improvements in GaN-on-Si HEMTs 294
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation 292
Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs 289
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs 289
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias 287
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 287
Influence of device self-heating on trap activation energy extraction 286
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 285
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 285
Study of GaN HEMTs electrical degradation by means of numerical simulations 284
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 283
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 282
Characterization of GaN-based metal--semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies 281
Micro-power photovoltaic harvester based on a frequency-to-voltage MPPT tracker 281
Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation 279
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 279
Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz 278
Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs during Pulse-Mode Operation 278
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements 276
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 274
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 273
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 272
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 271
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures 270
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 270
Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs 269
N-polar GaN epitaxy and high electron mobility transistors 268
Insights into the off-state breakdown mechanisms in power GaN HEMTs 267
Reliability issues of Gallium Nitride High Electron Mobility Transistors 266
Deep levels characterization in GaN HEMTs - Part II: Experimental and numerical evaluation of self-heating effects on the extraction of traps activation energy 266
Reliability aspects of GaN-HEMTs on composite substrates 264
Current collapse in AlGaN/GaN HEMT’s analysed by means of 2d device simulation 262
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 262
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 262
PARASITIC EFFECTS OF BUFFER DESIGN ON STATIC AND DYNAMIC PARAMETERS OF ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS 261
GaN RF and GaN Power – Device Parameter Drifts Analysis 260
Boost-converter-based solar harvester for low power applications 257
Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs 257
p-Gan cap layer for dispersion control in AlGaN/GaN HEMTs 256
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 255
High electron mobility transistor and manufacturing method thereof 254
Analysis of self-oscillating switched-mode circuit for low-voltage energy harvesting 253
Power and linearity characteristics of GaN MISFETs on sapphire substrate 253
High Linearity GaN HEMT Power Amplifier with Pre-Linearization Gate Diode 253
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 253
Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs 253
Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology 253
Totale 30.623
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Categoria #
all - tutte 201.920
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 201.920
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.769 0 0 0 160 119 261 210 153 353 308 784 421
2022/20233.908 419 427 310 322 432 637 59 440 516 47 164 135
2023/20242.710 120 190 170 340 611 109 124 477 101 85 67 316
2024/20259.433 439 123 105 618 1.606 1.228 573 664 972 317 1.189 1.599
2025/202614.037 784 970 1.244 1.201 1.632 1.033 1.743 741 1.523 1.417 954 795
2026/20276.119 779 2.288 1.495 1.557 0 0 0 0 0 0 0 0
Totale 55.595