CHINI, Alessandro
 Distribuzione geografica
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Continente #
NA - Nord America 24.992
AS - Asia 13.346
EU - Europa 9.645
SA - Sud America 1.503
Continente sconosciuto - Info sul continente non disponibili 512
AF - Africa 189
OC - Oceania 20
Totale 50.207
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Nazione #
US - Stati Uniti d'America 24.630
SG - Singapore 3.804
CN - Cina 3.628
GB - Regno Unito 2.950
HK - Hong Kong 1.936
IT - Italia 1.745
VN - Vietnam 1.219
SE - Svezia 1.177
BR - Brasile 1.149
DE - Germania 969
KR - Corea 600
FR - Francia 594
RU - Federazione Russa 500
UA - Ucraina 441
FI - Finlandia 435
TR - Turchia 427
IN - India 366
BD - Bangladesh 355
BG - Bulgaria 209
CA - Canada 182
TW - Taiwan 180
JP - Giappone 174
ID - Indonesia 134
NL - Olanda 113
AR - Argentina 111
IQ - Iraq 88
MX - Messico 82
PL - Polonia 81
IE - Irlanda 77
BE - Belgio 70
ZA - Sudafrica 64
ES - Italia 63
CO - Colombia 54
EC - Ecuador 53
PK - Pakistan 53
UZ - Uzbekistan 45
AE - Emirati Arabi Uniti 38
SA - Arabia Saudita 38
LT - Lituania 37
CL - Cile 36
PH - Filippine 35
AT - Austria 30
MA - Marocco 30
VE - Venezuela 29
CH - Svizzera 27
MY - Malesia 26
NP - Nepal 24
JO - Giordania 23
PE - Perù 23
IR - Iran 22
PY - Paraguay 21
DK - Danimarca 20
KE - Kenya 19
AU - Australia 17
EG - Egitto 16
JM - Giamaica 16
RO - Romania 16
TH - Thailandia 16
TN - Tunisia 16
CR - Costa Rica 14
EU - Europa 14
GR - Grecia 14
PA - Panama 14
DZ - Algeria 13
IL - Israele 13
UY - Uruguay 13
BH - Bahrain 12
DO - Repubblica Dominicana 12
PT - Portogallo 11
BY - Bielorussia 10
KZ - Kazakistan 10
OM - Oman 10
AZ - Azerbaigian 9
BO - Bolivia 9
HN - Honduras 9
CZ - Repubblica Ceca 8
AL - Albania 7
LB - Libano 7
SV - El Salvador 7
TT - Trinidad e Tobago 7
ET - Etiopia 6
RS - Serbia 6
SK - Slovacchia (Repubblica Slovacca) 6
SN - Senegal 6
AM - Armenia 5
KW - Kuwait 5
NI - Nicaragua 5
SY - Repubblica araba siriana 5
A2 - ???statistics.table.value.countryCode.A2??? 4
BA - Bosnia-Erzegovina 4
CY - Cipro 4
GE - Georgia 4
GT - Guatemala 4
KG - Kirghizistan 4
LA - Repubblica Popolare Democratica del Laos 4
LK - Sri Lanka 4
LV - Lettonia 4
PS - Palestinian Territory 4
BB - Barbados 3
EE - Estonia 3
Totale 49.646
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Città #
Fairfield 2.535
Santa Clara 2.432
Ashburn 2.235
Singapore 2.233
Southend 1.965
Hong Kong 1.850
Woodbridge 1.616
Chandler 1.437
Houston 1.342
Hefei 1.252
Seattle 989
Wilmington 885
San Jose 855
Cambridge 835
Jacksonville 821
Ann Arbor 769
Dearborn 673
Nyköping 664
Beijing 619
London 539
Seoul 440
Council Bluffs 397
Milan 334
Ho Chi Minh City 328
Hanoi 314
Los Angeles 309
Chicago 294
Helsinki 268
The Dalles 251
New York 229
Kent 228
Izmir 210
Princeton 208
Modena 206
San Diego 202
Sofia 202
Eugene 183
Lauterbourg 169
Boardman 163
Buffalo 152
Des Moines 138
Shanghai 117
Moscow 116
Jakarta 98
Dallas 94
São Paulo 85
Frankfurt am Main 81
Redwood City 80
Tokyo 80
Padova 79
Dublin 75
Munich 73
Guangzhou 72
Grafing 70
Wallingford 62
Rome 61
Salt Lake City 61
Nanjing 60
Taipei 60
Da Nang 58
Columbus 56
Bengaluru 53
Toronto 52
Bologna 51
Haiphong 51
Brussels 50
Brooklyn 49
Orem 48
Dong Ket 46
Atlanta 44
Chennai 43
Warsaw 43
Washington 41
Tashkent 40
Baghdad 38
Paris 37
Rio de Janeiro 37
Reggio Emilia 36
Bremen 35
Johannesburg 34
Miano 34
Redondo Beach 34
Denver 33
Hsinchu 33
Parma 33
Phoenix 33
San Francisco 33
Norwalk 32
Changsha 31
Stockholm 30
Turin 29
Amsterdam 28
Tampa 28
Jinan 27
Leawood 26
Mexico City 26
Duncan 25
Elk Grove Village 25
Nürnberg 25
Boston 24
Totale 34.726
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Nome #
p-GaN/AlGaN/GaN Enhancement-Mode HEMTs 626
GaN-based power devices: Physics, reliability, and perspectives 590
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 408
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 376
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 354
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 352
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 338
Analytical Model for Power Switching GaN-Based HEMT Design 337
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 329
N-polar GaN/AlGaN/GaN high electron mobility transistors 325
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 325
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 324
A C-Band High-Dynamic Range GaN HEMT Low-Noise Amplifier 323
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 323
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 322
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 314
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 314
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 313
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 312
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate 311
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements 310
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 310
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 309
The Italian perspectives on the application of GaN technology in future SAR and RADAR systems 309
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 308
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 307
Parasitic effects and long term stability of InP-based HEMTs 303
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 296
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design 294
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 294
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 293
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) 293
Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures 293
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 292
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 291
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 290
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 289
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 288
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 288
Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs 287
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT 287
2.1 A/mm current density AlGaN/GaN HEMT 286
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates 285
Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs 283
Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design 283
Traps localization and analysis in GaN HEMTs 282
Field plate related reliability improvements in GaN-on-Si HEMTs 282
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 282
A novel GaN HEMT degradation mechanism observed during HTST test 282
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 281
P-GaN/AlGaN/GaN high electron mobility transistors 281
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation 279
Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs 277
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 277
Study of GaN HEMTs electrical degradation by means of numerical simulations 277
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 273
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 273
Trapping and High Field Related Issues in GaN Power HEMTs 273
Optimization of 0.25µm GaN HEMTs through numerical simulations 272
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 271
Micro-power photovoltaic harvester based on a frequency-to-voltage MPPT tracker 270
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 270
Characterization of GaN-based metal--semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies 269
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 269
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 269
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs 268
Influence of device self-heating on trap activation energy extraction 267
Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs during Pulse-Mode Operation 266
Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz 265
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias 261
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 258
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 258
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures 256
Reliability issues of Gallium Nitride High Electron Mobility Transistors 256
Insights into the off-state breakdown mechanisms in power GaN HEMTs 256
Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation 255
N-polar GaN epitaxy and high electron mobility transistors 253
Reliability aspects of GaN-HEMTs on composite substrates 252
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements 251
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 250
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 249
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 248
Deep levels characterization in GaN HEMTs - Part II: Experimental and numerical evaluation of self-heating effects on the extraction of traps activation energy 245
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 245
Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology 245
Boost-converter-based solar harvester for low power applications 244
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 244
High Linearity GaN HEMT Power Amplifier with Pre-Linearization Gate Diode 243
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 242
Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs 242
Power and linearity characteristics of GaN MISFETs on sapphire substrate 241
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 239
High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology 238
Analysis of self-oscillating switched-mode circuit for low-voltage energy harvesting 237
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 237
GaN RF and GaN Power – Device Parameter Drifts Analysis 237
PARASITIC EFFECTS OF BUFFER DESIGN ON STATIC AND DYNAMIC PARAMETERS OF ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS 237
Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs 234
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement 233
Design of field-plated InP-based HEMTs 232
Totale 28.777
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Categoria #
all - tutte 184.481
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 184.481
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20223.873 151 564 389 160 119 261 210 153 353 308 784 421
2022/20233.908 419 427 310 322 432 637 59 440 516 47 164 135
2023/20242.710 120 190 170 340 611 109 124 477 101 85 67 316
2024/20259.433 439 123 105 618 1.606 1.228 573 664 972 317 1.189 1.599
2025/202614.037 784 970 1.244 1.201 1.632 1.033 1.743 741 1.523 1.417 954 795
2026/2027731 731 0 0 0 0 0 0 0 0 0 0 0
Totale 50.207