DI LECCE, Valerio
 Distribuzione geografica
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Continente #
NA - Nord America 2.701
AS - Asia 1.395
EU - Europa 904
SA - Sud America 165
AF - Africa 30
OC - Oceania 1
Totale 5.196
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Nazione #
US - Stati Uniti d'America 2.672
SG - Singapore 483
CN - Cina 339
GB - Regno Unito 305
VN - Vietnam 182
HK - Hong Kong 172
SE - Svezia 141
BR - Brasile 126
RU - Federazione Russa 85
DE - Germania 81
FR - Francia 62
IT - Italia 57
UA - Ucraina 52
TR - Turchia 50
FI - Finlandia 43
KR - Corea 39
IN - India 31
BG - Bulgaria 26
IQ - Iraq 18
BD - Bangladesh 14
PL - Polonia 13
ZA - Sudafrica 13
CA - Canada 11
AR - Argentina 10
MX - Messico 10
PK - Pakistan 10
BE - Belgio 8
CO - Colombia 7
AE - Emirati Arabi Uniti 6
EC - Ecuador 6
ID - Indonesia 6
NL - Olanda 6
TW - Taiwan 6
IE - Irlanda 5
PH - Filippine 5
JP - Giappone 4
UZ - Uzbekistan 4
BO - Bolivia 3
CL - Cile 3
EG - Egitto 3
ES - Italia 3
GA - Gabon 3
JM - Giamaica 3
MA - Marocco 3
MY - Malesia 3
TN - Tunisia 3
UY - Uruguay 3
VE - Venezuela 3
AL - Albania 2
AT - Austria 2
AZ - Azerbaigian 2
BH - Bahrain 2
DK - Danimarca 2
GR - Grecia 2
IL - Israele 2
JO - Giordania 2
KE - Kenya 2
LB - Libano 2
LT - Lituania 2
PA - Panama 2
PE - Perù 2
RO - Romania 2
SA - Arabia Saudita 2
TH - Thailandia 2
AM - Armenia 1
AU - Australia 1
BB - Barbados 1
BS - Bahamas 1
CH - Svizzera 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
DZ - Algeria 1
EE - Estonia 1
ET - Etiopia 1
IR - Iran 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
LV - Lettonia 1
MN - Mongolia 1
NO - Norvegia 1
NP - Nepal 1
PS - Palestinian Territory 1
PT - Portogallo 1
PY - Paraguay 1
SR - Suriname 1
TL - Timor Orientale 1
Totale 5.196
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Città #
Singapore 291
Santa Clara 290
Fairfield 261
Ashburn 214
Chandler 211
Woodbridge 194
Southend 178
Hong Kong 170
Houston 141
Ann Arbor 114
Seattle 114
Jacksonville 105
Nyköping 105
Wilmington 101
Hefei 99
Cambridge 92
Dearborn 82
Beijing 65
London 55
Ho Chi Minh City 53
Hanoi 50
San Jose 46
Seoul 37
Los Angeles 34
San Diego 29
Sofia 25
Helsinki 24
Princeton 23
New York 21
Chicago 20
Kent 20
Council Bluffs 19
Eugene 19
Lauterbourg 19
The Dalles 19
Izmir 16
Moscow 16
São Paulo 15
Buffalo 14
Da Nang 9
Des Moines 9
Haiphong 9
Milan 9
Munich 9
Shanghai 9
Warsaw 9
Baghdad 8
Brussels 8
Dallas 8
Frankfurt am Main 8
Modena 8
Biên Hòa 7
Johannesburg 7
Orem 7
Bremen 6
Salt Lake City 6
Wallingford 6
Atlanta 5
Bengaluru 5
Dublin 5
Hounslow 5
Quito 5
Redondo Beach 5
Rio de Janeiro 5
Bogotá 4
Brooklyn 4
Curitiba 4
Fuzhou 4
Lyon 4
Montreal 4
Mumbai 4
Norwalk 4
Redwood City 4
Saint Petersburg 4
Taipei 4
Berlin 3
Boardman 3
Bordeaux 3
Campinas 3
Erbil 3
Grafing 3
Guangzhou 3
Hyderabad 3
Hải Dương 3
Indiana 3
Jakarta 3
Jinan 3
Kingston 3
Libreville 3
Miami 3
Nanjing 3
Newark 3
Osasco 3
Parma 3
Queens 3
Rome 3
San Francisco 3
San Mateo 3
Stockholm 3
Tashkent 3
Totale 3.697
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Nome #
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 287
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 285
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 280
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 279
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 278
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 271
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 270
Study of GaN HEMTs electrical degradation by means of numerical simulations 269
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 268
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 256
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 231
Design of field-plated InP-based HEMTs 227
Trapping phenomena in field-plated high power GaAs pHEMTs 212
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 212
Design of GaN HEMTs for Power Switching Operation 190
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 187
GaN Hemt Degradation induced by Reverse Gate Bias Stress 180
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 178
Physical and circuit modeling of HfO2 based ferroelectric memories and devices 165
Reverse gate bias stress induced degradation of GaN HEMT 163
Multiscale Modeling of Ferroelectric Memories: Insights into Performances and Reliability 155
Multiscale modeling of neuromorphic computing: From materials to device operations 154
Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications 148
Caratterizzazione e simulazione numerica di HEMT in GaN per applicazioni di potenza e innovative 82
Totale 5.227
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Categoria #
all - tutte 18.826
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 18.826
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021125 0 0 0 0 0 0 0 0 0 73 32 20
2021/2022393 9 70 26 9 4 17 25 11 37 27 110 48
2022/2023475 48 71 41 49 43 84 4 64 46 5 11 9
2023/2024240 9 13 19 31 66 14 14 46 8 1 2 17
2024/20251.012 29 8 7 85 193 128 56 95 115 14 106 176
2025/20261.433 70 100 146 146 267 116 209 86 165 128 0 0
Totale 5.227