DI LECCE, Valerio
 Distribuzione geografica
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Continente #
NA - Nord America 2.829
AS - Asia 1.428
EU - Europa 925
SA - Sud America 165
AF - Africa 30
OC - Oceania 1
Totale 5.378
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Nazione #
US - Stati Uniti d'America 2.796
SG - Singapore 496
CN - Cina 345
GB - Regno Unito 306
VN - Vietnam 182
HK - Hong Kong 175
SE - Svezia 141
BR - Brasile 126
RU - Federazione Russa 85
DE - Germania 81
IT - Italia 77
FR - Francia 62
UA - Ucraina 52
TR - Turchia 50
FI - Finlandia 43
KR - Corea 39
IN - India 31
BG - Bulgaria 26
BD - Bangladesh 24
IQ - Iraq 18
PL - Polonia 13
ZA - Sudafrica 13
CA - Canada 12
MX - Messico 11
AR - Argentina 10
PK - Pakistan 10
BE - Belgio 8
CO - Colombia 7
AE - Emirati Arabi Uniti 6
EC - Ecuador 6
ID - Indonesia 6
NL - Olanda 6
TW - Taiwan 6
IE - Irlanda 5
JP - Giappone 5
PH - Filippine 5
JM - Giamaica 4
UZ - Uzbekistan 4
BO - Bolivia 3
CL - Cile 3
EG - Egitto 3
ES - Italia 3
GA - Gabon 3
MA - Marocco 3
MY - Malesia 3
TN - Tunisia 3
UY - Uruguay 3
VE - Venezuela 3
AL - Albania 2
AT - Austria 2
AZ - Azerbaigian 2
BH - Bahrain 2
DK - Danimarca 2
GR - Grecia 2
IL - Israele 2
JO - Giordania 2
KE - Kenya 2
LB - Libano 2
LT - Lituania 2
PA - Panama 2
PE - Perù 2
RO - Romania 2
SA - Arabia Saudita 2
TH - Thailandia 2
AM - Armenia 1
AU - Australia 1
BB - Barbados 1
BS - Bahamas 1
CH - Svizzera 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
DZ - Algeria 1
EE - Estonia 1
ET - Etiopia 1
GT - Guatemala 1
IR - Iran 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
LV - Lettonia 1
MN - Mongolia 1
NO - Norvegia 1
NP - Nepal 1
PS - Palestinian Territory 1
PT - Portogallo 1
PY - Paraguay 1
SR - Suriname 1
TL - Timor Orientale 1
Totale 5.378
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Città #
Singapore 295
Santa Clara 293
Fairfield 261
Ashburn 245
Chandler 211
Woodbridge 194
Southend 178
Hong Kong 173
Houston 141
Ann Arbor 114
Seattle 114
Jacksonville 105
Nyköping 105
Wilmington 101
Hefei 99
San Jose 96
Cambridge 92
Dearborn 82
Beijing 65
London 55
Ho Chi Minh City 53
Hanoi 50
Seoul 37
Council Bluffs 35
Los Angeles 34
San Diego 29
Sofia 25
Helsinki 24
Princeton 23
New York 22
Chicago 20
Kent 20
Eugene 19
Lauterbourg 19
The Dalles 19
Izmir 16
Moscow 16
São Paulo 15
Buffalo 14
Dallas 13
Milan 12
Da Nang 9
Des Moines 9
Haiphong 9
Munich 9
Shanghai 9
Warsaw 9
Baghdad 8
Brussels 8
Frankfurt am Main 8
Modena 8
Biên Hòa 7
Johannesburg 7
Orem 7
Bremen 6
Miano 6
Salt Lake City 6
Wallingford 6
Atlanta 5
Bengaluru 5
Dublin 5
Hounslow 5
Quito 5
Redondo Beach 5
Rio de Janeiro 5
Bogotá 4
Brooklyn 4
Columbus 4
Curitiba 4
Fuzhou 4
Kingston 4
Lyon 4
Montreal 4
Mumbai 4
Norwalk 4
Redwood City 4
Saint Petersburg 4
San Francisco 4
Taipei 4
Tokyo 4
Berlin 3
Boardman 3
Bordeaux 3
Boston 3
Campinas 3
Erbil 3
Grafing 3
Guangzhou 3
Hyderabad 3
Hải Dương 3
Indiana 3
Jakarta 3
Jinan 3
Libreville 3
Mexico City 3
Miami 3
Nanjing 3
Newark 3
Osasco 3
Parma 3
Totale 3.820
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Nome #
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 304
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 291
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 291
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 287
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 286
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 279
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 278
Study of GaN HEMTs electrical degradation by means of numerical simulations 274
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 271
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 266
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 241
Design of field-plated InP-based HEMTs 231
Trapping phenomena in field-plated high power GaAs pHEMTs 219
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 216
Design of GaN HEMTs for Power Switching Operation 192
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 192
GaN Hemt Degradation induced by Reverse Gate Bias Stress 186
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 183
Physical and circuit modeling of HfO2 based ferroelectric memories and devices 172
Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications 169
Reverse gate bias stress induced degradation of GaN HEMT 168
Multiscale Modeling of Ferroelectric Memories: Insights into Performances and Reliability 163
Multiscale modeling of neuromorphic computing: From materials to device operations 159
Caratterizzazione e simulazione numerica di HEMT in GaN per applicazioni di potenza e innovative 91
Totale 5.409
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Categoria #
all - tutte 19.869
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 19.869
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202120 0 0 0 0 0 0 0 0 0 0 0 20
2021/2022393 9 70 26 9 4 17 25 11 37 27 110 48
2022/2023475 48 71 41 49 43 84 4 64 46 5 11 9
2023/2024240 9 13 19 31 66 14 14 46 8 1 2 17
2024/20251.012 29 8 7 85 193 128 56 95 115 14 106 176
2025/20261.615 70 100 146 146 267 116 209 86 165 167 109 34
Totale 5.409