DI LECCE, Valerio
 Distribuzione geografica
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Continente #
NA - Nord America 2.864
AS - Asia 1.442
EU - Europa 931
SA - Sud America 168
Continente sconosciuto - Info sul continente non disponibili 31
AF - Africa 30
OC - Oceania 1
Totale 5.467
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Nazione #
US - Stati Uniti d'America 2.828
SG - Singapore 502
CN - Cina 349
GB - Regno Unito 306
VN - Vietnam 182
HK - Hong Kong 176
SE - Svezia 141
BR - Brasile 128
RU - Federazione Russa 85
IT - Italia 83
DE - Germania 81
FR - Francia 62
UA - Ucraina 52
TR - Turchia 50
FI - Finlandia 43
KR - Corea 39
IN - India 32
BG - Bulgaria 26
BD - Bangladesh 25
IQ - Iraq 18
CA - Canada 14
PL - Polonia 13
ZA - Sudafrica 13
MX - Messico 11
AR - Argentina 10
PK - Pakistan 10
BE - Belgio 8
CO - Colombia 7
AE - Emirati Arabi Uniti 6
EC - Ecuador 6
ID - Indonesia 6
JP - Giappone 6
NL - Olanda 6
TW - Taiwan 6
IE - Irlanda 5
PH - Filippine 5
JM - Giamaica 4
UZ - Uzbekistan 4
BO - Bolivia 3
CL - Cile 3
EG - Egitto 3
ES - Italia 3
GA - Gabon 3
MA - Marocco 3
MY - Malesia 3
TN - Tunisia 3
UY - Uruguay 3
VE - Venezuela 3
AL - Albania 2
AT - Austria 2
AZ - Azerbaigian 2
BH - Bahrain 2
DK - Danimarca 2
GR - Grecia 2
IL - Israele 2
JO - Giordania 2
KE - Kenya 2
LB - Libano 2
LT - Lituania 2
PA - Panama 2
PE - Perù 2
PY - Paraguay 2
RO - Romania 2
SA - Arabia Saudita 2
TH - Thailandia 2
AM - Armenia 1
AU - Australia 1
BB - Barbados 1
BS - Bahamas 1
CH - Svizzera 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
DZ - Algeria 1
EE - Estonia 1
ET - Etiopia 1
GT - Guatemala 1
HN - Honduras 1
IR - Iran 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
LV - Lettonia 1
MN - Mongolia 1
NO - Norvegia 1
NP - Nepal 1
PS - Palestinian Territory 1
PT - Portogallo 1
SR - Suriname 1
TL - Timor Orientale 1
Totale 5.436
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Città #
Singapore 296
Santa Clara 295
Fairfield 261
Ashburn 258
Chandler 211
Woodbridge 194
Southend 178
Hong Kong 174
Houston 141
Ann Arbor 114
Seattle 114
Jacksonville 105
Nyköping 105
Wilmington 101
Hefei 99
San Jose 98
Cambridge 92
Dearborn 82
Beijing 65
London 55
Ho Chi Minh City 53
Hanoi 50
Seoul 37
Council Bluffs 35
Los Angeles 35
San Diego 29
Sofia 25
Helsinki 24
Princeton 23
New York 22
Chicago 20
Kent 20
Eugene 19
Lauterbourg 19
The Dalles 19
Dallas 16
Izmir 16
Moscow 16
São Paulo 15
Buffalo 14
Milan 13
Shanghai 10
Da Nang 9
Des Moines 9
Haiphong 9
Munich 9
Warsaw 9
Baghdad 8
Brussels 8
Frankfurt am Main 8
Modena 8
Biên Hòa 7
Johannesburg 7
Orem 7
Bremen 6
Miano 6
Salt Lake City 6
Wallingford 6
Atlanta 5
Bengaluru 5
Brooklyn 5
Dublin 5
Hounslow 5
Quito 5
Redondo Beach 5
Rio de Janeiro 5
Rome 5
San Francisco 5
Bogotá 4
Columbus 4
Curitiba 4
Fuzhou 4
Kingston 4
Lyon 4
Montreal 4
Mumbai 4
Norwalk 4
Redwood City 4
Saint Petersburg 4
Taipei 4
Tokyo 4
Turin 4
Berlin 3
Boardman 3
Bordeaux 3
Boston 3
Campinas 3
Erbil 3
Grafing 3
Guangzhou 3
Hyderabad 3
Hải Dương 3
Indiana 3
Jakarta 3
Jinan 3
Libreville 3
Mexico City 3
Miami 3
Nanjing 3
Newark 3
Totale 3.850
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Nome #
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 309
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 296
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 294
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 293
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 288
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 282
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 281
Study of GaN HEMTs electrical degradation by means of numerical simulations 277
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 273
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 270
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 242
Design of field-plated InP-based HEMTs 232
Trapping phenomena in field-plated high power GaAs pHEMTs 221
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 219
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 194
Design of GaN HEMTs for Power Switching Operation 193
GaN Hemt Degradation induced by Reverse Gate Bias Stress 186
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 183
Physical and circuit modeling of HfO2 based ferroelectric memories and devices 174
Reverse gate bias stress induced degradation of GaN HEMT 169
Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications 169
Multiscale Modeling of Ferroelectric Memories: Insights into Performances and Reliability 168
Multiscale modeling of neuromorphic computing: From materials to device operations 160
Caratterizzazione e simulazione numerica di HEMT in GaN per applicazioni di potenza e innovative 94
Totale 5.467
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Categoria #
all - tutte 20.611
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 20.611
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022384 0 70 26 9 4 17 25 11 37 27 110 48
2022/2023475 48 71 41 49 43 84 4 64 46 5 11 9
2023/2024240 9 13 19 31 66 14 14 46 8 1 2 17
2024/20251.012 29 8 7 85 193 128 56 95 115 14 106 176
2025/20261.626 70 100 146 146 267 116 209 86 165 167 109 45
2026/202747 47 0 0 0 0 0 0 0 0 0 0 0
Totale 5.467