DI LECCE, Valerio
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 2.565
AS - Asia 1.013
EU - Europa 844
SA - Sud America 143
AF - Africa 18
OC - Oceania 1
Totale 4.584
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 2.549
SG - Singapore 325
CN - Cina 324
GB - Regno Unito 298
HK - Hong Kong 158
SE - Svezia 141
BR - Brasile 116
RU - Federazione Russa 84
DE - Germania 79
VN - Vietnam 69
UA - Ucraina 52
TR - Turchia 49
IT - Italia 47
FI - Finlandia 36
FR - Francia 36
BG - Bulgaria 24
KR - Corea 21
IN - India 18
PL - Polonia 13
ZA - Sudafrica 10
CA - Canada 9
AR - Argentina 8
BE - Belgio 8
IQ - Iraq 7
BD - Bangladesh 6
EC - Ecuador 5
ID - Indonesia 5
IE - Irlanda 5
NL - Olanda 5
TW - Taiwan 5
CO - Colombia 4
JP - Giappone 4
AE - Emirati Arabi Uniti 3
BO - Bolivia 3
ES - Italia 3
MA - Marocco 3
MX - Messico 3
PK - Pakistan 3
UZ - Uzbekistan 3
AL - Albania 2
DK - Danimarca 2
GA - Gabon 2
GR - Grecia 2
IL - Israele 2
JM - Giamaica 2
LT - Lituania 2
PA - Panama 2
PE - Perù 2
VE - Venezuela 2
AM - Armenia 1
AT - Austria 1
AU - Australia 1
AZ - Azerbaigian 1
BH - Bahrain 1
CL - Cile 1
EE - Estonia 1
ET - Etiopia 1
IR - Iran 1
JO - Giordania 1
KE - Kenya 1
KG - Kirghizistan 1
LV - Lettonia 1
MN - Mongolia 1
NO - Norvegia 1
NP - Nepal 1
PS - Palestinian Territory 1
PY - Paraguay 1
RO - Romania 1
SA - Arabia Saudita 1
SR - Suriname 1
TH - Thailandia 1
TN - Tunisia 1
Totale 4.584
Salva come PNG Salva come JPEG
Città #
Santa Clara 286
Fairfield 261
Chandler 211
Woodbridge 194
Ashburn 185
Singapore 182
Southend 178
Hong Kong 158
Houston 141
Ann Arbor 114
Seattle 114
Jacksonville 105
Nyköping 105
Wilmington 101
Hefei 99
Cambridge 92
Dearborn 82
Beijing 58
London 55
Los Angeles 34
San Diego 29
Sofia 24
Princeton 23
Kent 20
New York 20
Council Bluffs 19
Eugene 19
Seoul 19
Ho Chi Minh City 18
Chicago 17
Hanoi 17
Helsinki 17
Izmir 16
Moscow 16
Buffalo 14
São Paulo 14
Des Moines 9
Munich 9
Shanghai 9
Warsaw 9
Brussels 8
Milan 8
Dallas 7
Frankfurt am Main 7
Bremen 6
Haiphong 6
Modena 6
Salt Lake City 6
Atlanta 5
Bengaluru 5
Dublin 5
Hounslow 5
Johannesburg 5
Redondo Beach 5
Rio de Janeiro 5
Biên Hòa 4
Brooklyn 4
Curitiba 4
Fuzhou 4
Lyon 4
Montreal 4
Norwalk 4
Quito 4
Redwood City 4
Saint Petersburg 4
The Dalles 4
Berlin 3
Boardman 3
Grafing 3
Guangzhou 3
Hải Dương 3
Indiana 3
Jinan 3
Nanjing 3
Osasco 3
Parma 3
Queens 3
San Francisco 3
San Mateo 3
Stockholm 3
Taipei 3
Tashkent 3
Tokyo 3
Wroclaw 3
Wuhan 3
Xian 3
Amsterdam 2
Ankara 2
Auburn Hills 2
Baghdad 2
Bangalore 2
Bethnal Green 2
Bexley 2
Bogotá 2
Bordeaux 2
Boston 2
Brasília 2
Calgary 2
Campinas 2
Casablanca 2
Totale 3.314
Salva come PNG Salva come JPEG
Nome #
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 260
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 254
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 254
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 252
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 251
Study of GaN HEMTs electrical degradation by means of numerical simulations 249
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 243
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 243
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 241
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 227
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 204
Design of field-plated InP-based HEMTs 202
Trapping phenomena in field-plated high power GaAs pHEMTs 194
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 180
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 161
Design of GaN HEMTs for Power Switching Operation 158
GaN Hemt Degradation induced by Reverse Gate Bias Stress 153
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 152
Physical and circuit modeling of HfO2 based ferroelectric memories and devices 150
Reverse gate bias stress induced degradation of GaN HEMT 140
Multiscale modeling of neuromorphic computing: From materials to device operations 131
Multiscale Modeling of Ferroelectric Memories: Insights into Performances and Reliability 130
Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications 125
Caratterizzazione e simulazione numerica di HEMT in GaN per applicazioni di potenza e innovative 61
Totale 4.615
Salva come PNG Salva come JPEG
Categoria #
all - tutte 17.723
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 17.723
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021301 0 0 0 0 0 56 32 68 20 73 32 20
2021/2022393 9 70 26 9 4 17 25 11 37 27 110 48
2022/2023475 48 71 41 49 43 84 4 64 46 5 11 9
2023/2024240 9 13 19 31 66 14 14 46 8 1 2 17
2024/20251.012 29 8 7 85 193 128 56 95 115 14 106 176
2025/2026821 70 100 146 146 267 92 0 0 0 0 0 0
Totale 4.615