statistiche ricercatore

Continente	#
NA - Nord America	2.092
AS - Asia	892
EU - Europa	726
SA - Sud America	125
Continente sconosciuto - Info sul continente non disponibili	23
AF - Africa	15
OC - Oceania	1
Totale	3.874

Nazione	#
US - Stati Uniti d'America	2.056
SG - Singapore	289
GB - Regno Unito	247
CN - Cina	240
VN - Vietnam	120
SE - Svezia	118
HK - Hong Kong	101
BR - Brasile	100
DE - Germania	83
IT - Italia	64
RU - Federazione Russa	54
UA - Ucraina	37
FR - Francia	36
FI - Finlandia	35
KR - Corea	32
TR - Turchia	31
IN - India	19
BD - Bangladesh	15
BG - Bulgaria	15
MX - Messico	13
BE - Belgio	12
CA - Canada	12
IQ - Iraq	8
PL - Polonia	8
AE - Emirati Arabi Uniti	6
AR - Argentina	6
EC - Ecuador	6
ZA - Sudafrica	6
CO - Colombia	4
IE - Irlanda	4
JP - Giappone	4
MY - Malesia	4
PK - Pakistan	4
AZ - Azerbaigian	3
ES - Italia	3
LT - Lituania	3
PH - Filippine	3
VE - Venezuela	3
BO - Bolivia	2
CI - Costa d'Avorio	2
CR - Costa Rica	2
DK - Danimarca	2
EG - Egitto	2
GT - Guatemala	2
ID - Indonesia	2
JM - Giamaica	2
JO - Giordania	2
PE - Perù	2
SA - Arabia Saudita	2
TN - Tunisia	2
UZ - Uzbekistan	2
AT - Austria	1
AU - Australia	1
BZ - Belize	1
CL - Cile	1
CW - ???statistics.table.value.countryCode.CW???	1
CY - Cipro	1
DZ - Algeria	1
GP - Guadalupe	1
HN - Honduras	1
HU - Ungheria	1
IR - Iran	1
KE - Kenya	1
NG - Nigeria	1
NI - Nicaragua	1
NL - Olanda	1
NO - Norvegia	1
NP - Nepal	1
OM - Oman	1
PA - Panama	1
RO - Romania	1
TW - Taiwan	1
UY - Uruguay	1
Totale	3.852

Nome	#
A 2.4-GHz wireless alpha-ray sensor for remote monitoring and spectroscopy	384
Application of the BJT Detector for Simple, Low-Cost, and Low-Power Alpha-Particle Detection Systems	369
Alpha-particle detection based on the BJT detector and simple, IC-based readout electronics	333
Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector	309
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs	308
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress	307
Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics	303
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters	301
Study of GaN HEMTs electrical degradation by means of numerical simulations	284
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs	255
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement	250
A Novel Inertial/RFID Based Localization Method for Autonomous Lawnmowers	243
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs	228
Totale	3.874

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	210	0	0	0	10	1	23	14	8	35	20	69	30
2022/2023	322	30	47	23	30	36	58	3	43	24	1	14	13
2023/2024	159	5	6	24	22	38	9	13	29	2	1	1	9
2024/2025	677	22	7	5	45	113	83	62	43	83	25	92	97
2025/2026	1.038	66	75	110	102	186	71	132	43	86	84	55	28
2026/2027	192	29	49	54	60	0	0	0	0	0	0	0	0
Totale													3.874