MORASSI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 1.977
AS - Asia 951
EU - Europa 616
SA - Sud America 104
AF - Africa 13
Totale 3.661
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Nazione #
US - Stati Uniti d'America 1.947
SG - Singapore 307
CN - Cina 243
GB - Regno Unito 217
HK - Hong Kong 145
DE - Germania 91
VN - Vietnam 86
BR - Brasile 80
SE - Svezia 70
TR - Turchia 67
RU - Federazione Russa 52
UA - Ucraina 47
IT - Italia 42
KR - Corea 29
FI - Finlandia 27
FR - Francia 23
CA - Canada 16
BG - Bulgaria 15
IN - India 15
BD - Bangladesh 12
IQ - Iraq 11
PT - Portogallo 11
MX - Messico 10
AR - Argentina 6
ID - Indonesia 6
ZA - Sudafrica 6
EC - Ecuador 5
PH - Filippine 5
PL - Polonia 5
IE - Irlanda 4
MY - Malesia 4
TW - Taiwan 4
VE - Venezuela 4
AT - Austria 3
JP - Giappone 3
PK - Pakistan 3
CH - Svizzera 2
CL - Cile 2
CO - Colombia 2
PE - Perù 2
PR - Porto Rico 2
TN - Tunisia 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
BH - Bahrain 1
BO - Bolivia 1
CI - Costa d'Avorio 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
ES - Italia 1
ET - Etiopia 1
HU - Ungheria 1
IR - Iran 1
JO - Giordania 1
KW - Kuwait 1
KZ - Kazakistan 1
LT - Lituania 1
MA - Marocco 1
MD - Moldavia 1
MO - Macao, regione amministrativa speciale della Cina 1
MR - Mauritania 1
NL - Olanda 1
PA - Panama 1
PY - Paraguay 1
QA - Qatar 1
RO - Romania 1
SA - Arabia Saudita 1
TH - Thailandia 1
UY - Uruguay 1
UZ - Uzbekistan 1
Totale 3.661
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Città #
Fairfield 215
Santa Clara 189
Singapore 171
Ashburn 169
Woodbridge 163
Southend 161
Hong Kong 145
Chandler 110
Houston 98
Jacksonville 87
Ann Arbor 78
Seattle 77
Hefei 73
Cambridge 70
Dearborn 68
Wilmington 64
Nyköping 60
Izmir 52
San Jose 50
The Dalles 44
London 41
Beijing 38
Chicago 36
Seoul 28
Ho Chi Minh City 25
Princeton 21
Hanoi 18
Los Angeles 18
Moscow 18
San Diego 17
Modena 16
Bremen 15
Eugene 15
Sofia 15
Shanghai 13
Helsinki 12
Lauterbourg 12
Columbus 11
Des Moines 11
Buffalo 10
Grafing 10
Milan 10
Boardman 8
New York 8
Salt Lake City 8
São Paulo 8
Frankfurt am Main 7
Munich 7
Brooklyn 6
Montreal 6
Redwood City 6
Toronto 6
Baghdad 5
Falkenstein 5
Warsaw 5
Atlanta 4
Da Nang 4
Guangzhou 4
Haiphong 4
Johannesburg 4
Kunming 4
Orem 4
Pune 4
Stockholm 4
Basra 3
Council Bluffs 3
Denver 3
Dhaka 3
Hải Dương 3
Indiana 3
Kansas City 3
Mexico City 3
Mountain View 3
Nanjing 3
San Francisco 3
Taipei 3
Thái Bình 3
Biên Hòa 2
Bắc Ninh 2
Caracas 2
Chiswick 2
Cork 2
Correggio 2
Dalian 2
Dongguan 2
Dresden 2
Dublin 2
Elk Grove Village 2
Erbil 2
Grenoble 2
Guarapari 2
Jinan 2
Karachi 2
Kent 2
Kuala Lumpur 2
Kyiv 2
Leawood 2
Lima 2
Linfen 2
Lingao 2
Totale 2.760
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Nome #
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 298
A Physical Model for Post-Breakdown Digital Gate Current Noise 292
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer 290
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs 275
Connecting electrical and structural dielectric characteristics 266
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs 264
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs 244
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part I-Model Description and Validation 240
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part II-Fits and Extraction from Experimental Data 227
Connecting electrical and structural dielectric characteristics 225
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing 222
Experimental/numerical investigation of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric 197
Interface-trap effects in inversion-type enhancement-mode InGaAs/ZrO2 n-channel MOSFETs 194
Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics 192
Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs 178
Dispositivi MOSFET con Canale in InGaAs per l’Estensione della Tecnologia CMOS oltre il Nodo “16-nm" 76
Totale 3.680
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Categoria #
all - tutte 12.673
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 12.673
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202185 0 0 0 0 0 0 0 0 0 45 18 22
2021/2022267 10 33 31 1 3 23 15 8 25 26 71 21
2022/2023284 21 29 32 17 45 53 2 30 37 0 6 12
2023/2024161 4 10 5 26 40 27 12 16 0 4 2 15
2024/2025722 32 7 1 48 142 89 57 29 97 34 97 89
2025/2026915 74 73 76 80 183 86 113 40 125 65 0 0
Totale 3.680