MORASSI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 2.382
AS - Asia 987
EU - Europa 661
SA - Sud America 107
Continente sconosciuto - Info sul continente non disponibili 26
AF - Africa 13
Totale 4.176
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Nazione #
US - Stati Uniti d'America 2.319
SG - Singapore 311
CN - Cina 252
GB - Regno Unito 218
HK - Hong Kong 145
DE - Germania 91
VN - Vietnam 86
IT - Italia 82
BR - Brasile 81
SE - Svezia 70
TR - Turchia 67
RU - Federazione Russa 52
UA - Ucraina 47
BD - Bangladesh 32
KR - Corea 29
FI - Finlandia 28
CA - Canada 27
FR - Francia 24
BG - Bulgaria 15
IN - India 15
IQ - Iraq 11
MX - Messico 11
PT - Portogallo 11
CW - ???statistics.table.value.countryCode.CW??? 7
ID - Indonesia 7
AR - Argentina 6
VE - Venezuela 6
ZA - Sudafrica 6
EC - Ecuador 5
GT - Guatemala 5
PH - Filippine 5
PL - Polonia 5
PR - Porto Rico 5
TT - Trinidad e Tobago 5
TW - Taiwan 5
IE - Irlanda 4
MY - Malesia 4
AT - Austria 3
JP - Giappone 3
NI - Nicaragua 3
PK - Pakistan 3
CH - Svizzera 2
CL - Cile 2
CO - Colombia 2
GP - Guadalupe 2
NL - Olanda 2
PE - Perù 2
TN - Tunisia 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
BB - Barbados 1
BH - Bahrain 1
BO - Bolivia 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
EE - Estonia 1
ES - Italia 1
ET - Etiopia 1
HN - Honduras 1
HU - Ungheria 1
IL - Israele 1
IR - Iran 1
JO - Giordania 1
KW - Kuwait 1
KZ - Kazakistan 1
LT - Lituania 1
MA - Marocco 1
MD - Moldavia 1
MO - Macao, regione amministrativa speciale della Cina 1
MR - Mauritania 1
PA - Panama 1
PY - Paraguay 1
QA - Qatar 1
RO - Romania 1
SA - Arabia Saudita 1
TH - Thailandia 1
UY - Uruguay 1
UZ - Uzbekistan 1
Totale 4.157
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Città #
Ashburn 267
Fairfield 215
Santa Clara 199
Singapore 172
Woodbridge 163
Southend 161
Hong Kong 145
San Jose 122
Chandler 110
Houston 99
Jacksonville 87
Ann Arbor 78
Seattle 77
Hefei 73
Cambridge 70
Dearborn 68
Wilmington 64
Nyköping 60
Izmir 52
Council Bluffs 47
The Dalles 44
London 41
Beijing 40
Chicago 38
Seoul 28
Ho Chi Minh City 25
Los Angeles 25
Milan 21
Princeton 21
Hanoi 18
Moscow 18
San Diego 17
Modena 16
Bremen 15
Columbus 15
Eugene 15
Sofia 15
Helsinki 13
Shanghai 13
Buffalo 12
Lauterbourg 12
Des Moines 11
New York 11
Grafing 10
São Paulo 9
Boardman 8
Salt Lake City 8
Toronto 8
Brooklyn 7
Frankfurt am Main 7
Montreal 7
Munich 7
Saint Augustine 7
Willemstad 7
Orem 6
Redwood City 6
Washington 6
Atlanta 5
Baghdad 5
Falkenstein 5
Warsaw 5
Da Nang 4
Dallas 4
Denver 4
Guangzhou 4
Haiphong 4
Johannesburg 4
Kunming 4
Mexico City 4
Pune 4
Stockholm 4
Arlington 3
Basra 3
Caracas 3
Dhaka 3
Hải Dương 3
Indiana 3
Indianapolis 3
Kansas City 3
Managua 3
Mountain View 3
Nanjing 3
San Francisco 3
San Juan 3
Taipei 3
Tampa 3
Thái Bình 3
Verona 3
Biên Hòa 2
Bắc Ninh 2
Chiswick 2
Cork 2
Correggio 2
Dalian 2
Dongguan 2
Dresden 2
Dublin 2
Edmonton 2
Elk Grove Village 2
Erbil 2
Totale 3.051
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Nome #
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 326
A Physical Model for Post-Breakdown Digital Gate Current Noise 321
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer 314
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs 309
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part II-Fits and Extraction from Experimental Data 302
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs 290
Connecting electrical and structural dielectric characteristics 286
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs 274
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part I-Model Description and Validation 272
Connecting electrical and structural dielectric characteristics 243
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing 239
Interface-trap effects in inversion-type enhancement-mode InGaAs/ZrO2 n-channel MOSFETs 236
Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics 231
Experimental/numerical investigation of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric 213
Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs 207
Dispositivi MOSFET con Canale in InGaAs per l’Estensione della Tecnologia CMOS oltre il Nodo “16-nm" 113
Totale 4.176
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Categoria #
all - tutte 15.020
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 15.020
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022192 0 0 0 0 3 23 15 8 25 26 71 21
2022/2023284 21 29 32 17 45 53 2 30 37 0 6 12
2023/2024161 4 10 5 26 40 27 12 16 0 4 2 15
2024/2025722 32 7 1 48 142 89 57 29 97 34 97 89
2025/20261.074 74 73 76 80 183 86 113 40 125 71 94 59
2026/2027337 28 63 104 110 32 0 0 0 0 0 0 0
Totale 4.176