statistiche ricercatore

Continente	#
AS - Asia	1.024
NA - Nord America	620
EU - Europa	446
SA - Sud America	123
AF - Africa	11
Continente sconosciuto - Info sul continente non disponibili	1
Totale	2.225

Nazione	#
US - Stati Uniti d'America	598
CN - Cina	373
SG - Singapore	311
IT - Italia	149
HK - Hong Kong	107
VN - Vietnam	90
BR - Brasile	82
KR - Corea	66
DE - Germania	54
FR - Francia	48
GB - Regno Unito	48
FI - Finlandia	41
RU - Federazione Russa	27
BE - Belgio	23
AR - Argentina	16
ID - Indonesia	15
TW - Taiwan	15
CA - Canada	14
NL - Olanda	12
AT - Austria	10
SE - Svezia	9
ES - Italia	8
IN - India	8
CO - Colombia	7
EC - Ecuador	7
IQ - Iraq	7
BD - Bangladesh	6
MX - Messico	6
CL - Cile	5
JP - Giappone	5
LT - Lituania	5
MY - Malesia	4
PK - Pakistan	4
PL - Polonia	4
ZA - Sudafrica	4
PH - Filippine	3
PY - Paraguay	3
RO - Romania	3
AE - Emirati Arabi Uniti	2
IE - Irlanda	2
KE - Kenya	2
MA - Marocco	2
NP - Nepal	2
AZ - Azerbaigian	1
BA - Bosnia-Erzegovina	1
BO - Bolivia	1
CG - Congo	1
CR - Costa Rica	1
CZ - Repubblica Ceca	1
DZ - Algeria	1
KZ - Kazakistan	1
MN - Mongolia	1
OM - Oman	1
PE - Perù	1
SK - Slovacchia (Repubblica Slovacca)	1
TH - Thailandia	1
TN - Tunisia	1
TR - Turchia	1
TT - Trinidad e Tobago	1
UY - Uruguay	1
XK - ???statistics.table.value.countryCode.XK???	1
Totale	2.225

Nome	#
Il ruolo della carica intrappolata sull’affidabilità e la degradazione negli ossidi	200
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks	194
Evaluation of Imprint and Multi-Level Dynamics in Ferroelectric Capacitors	186
The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena	181
Impedance Spectroscopy of Ferroelectric Capacitors and Ferroelectric Tunnel Junctions	180
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs	176
The Impact of Electrostatic Interactions between Defects on the Characteristics of Random Telegraph Noise	165
Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals	162
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging	161
Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by means of Impedance Spectroscopy	159
Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide	156
The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation	119
A Novel D2 Plasma Treatment for Defect Passivation: From Modeling to Process Optimization	109
Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability	97
Totale	2.245

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2022/2023	44	0	0	0	2	4	4	2	3	4	2	8	15
2023/2024	197	10	9	14	21	24	4	23	23	6	2	12	49
2024/2025	778	33	15	21	54	87	103	50	34	71	45	136	129
2025/2026	1.226	136	126	127	113	181	72	153	41	134	132	11	0
Totale													2.245