statistiche ricercatore

Continente	#
AS - Asia	1.079
NA - Nord America	976
EU - Europa	476
SA - Sud America	123
Continente sconosciuto - Info sul continente non disponibili	21
AF - Africa	11
Totale	2.686

Nazione	#
US - Stati Uniti d'America	945
CN - Cina	379
SG - Singapore	317
IT - Italia	171
HK - Hong Kong	107
VN - Vietnam	90
BR - Brasile	82
KR - Corea	67
DE - Germania	60
GB - Regno Unito	49
FR - Francia	48
BD - Bangladesh	45
FI - Finlandia	41
RU - Federazione Russa	27
BE - Belgio	23
CA - Canada	19
AR - Argentina	16
ID - Indonesia	15
TW - Taiwan	15
NL - Olanda	12
AT - Austria	11
SE - Svezia	9
ES - Italia	8
IN - India	8
CO - Colombia	7
EC - Ecuador	7
IQ - Iraq	7
JP - Giappone	7
MX - Messico	6
CL - Cile	5
LT - Lituania	5
MY - Malesia	5
PK - Pakistan	4
PL - Polonia	4
ZA - Sudafrica	4
PH - Filippine	3
PY - Paraguay	3
RO - Romania	3
AE - Emirati Arabi Uniti	2
CR - Costa Rica	2
IE - Irlanda	2
KE - Kenya	2
MA - Marocco	2
NP - Nepal	2
AZ - Azerbaigian	1
BA - Bosnia-Erzegovina	1
BO - Bolivia	1
CG - Congo	1
CZ - Repubblica Ceca	1
DZ - Algeria	1
HN - Honduras	1
JM - Giamaica	1
KZ - Kazakistan	1
MN - Mongolia	1
OM - Oman	1
PE - Perù	1
PR - Porto Rico	1
SK - Slovacchia (Repubblica Slovacca)	1
TH - Thailandia	1
TN - Tunisia	1
TR - Turchia	1
TT - Trinidad e Tobago	1
UY - Uruguay	1
XK - ???statistics.table.value.countryCode.XK???	1
Totale	2.666

Nome	#
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging	343
Il ruolo della carica intrappolata sull’affidabilità e la degradazione negli ossidi	249
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks	241
The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena	199
Evaluation of Imprint and Multi-Level Dynamics in Ferroelectric Capacitors	198
Impedance Spectroscopy of Ferroelectric Capacitors and Ferroelectric Tunnel Junctions	195
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs	190
The Impact of Electrostatic Interactions between Defects on the Characteristics of Random Telegraph Noise	183
Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals	174
Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide	173
Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by means of Impedance Spectroscopy	168
The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation	134
A Novel D2 Plasma Treatment for Defect Passivation: From Modeling to Process Optimization	130
Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability	109
Totale	2.686

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2022/2023	44	0	0	0	2	4	4	2	3	4	2	8	15
2023/2024	197	10	9	14	21	24	4	23	23	6	2	12	49
2024/2025	778	33	15	21	54	87	103	50	34	71	45	136	129
2025/2026	1.352	136	126	127	113	181	72	153	41	134	132	85	52
2026/2027	315	91	224	0	0	0	0	0	0	0	0	0	0
Totale													2.686