statistiche ricercatore

Continente	#
NA - Nord America	1.116
AS - Asia	1.089
EU - Europa	493
SA - Sud America	126
Continente sconosciuto - Info sul continente non disponibili	21
AF - Africa	12
OC - Oceania	1
Totale	2.858

Nazione	#
US - Stati Uniti d'America	1.078
CN - Cina	380
SG - Singapore	325
IT - Italia	178
HK - Hong Kong	107
VN - Vietnam	90
BR - Brasile	84
KR - Corea	67
DE - Germania	62
GB - Regno Unito	49
FR - Francia	48
BD - Bangladesh	45
FI - Finlandia	41
RU - Federazione Russa	27
BE - Belgio	25
CA - Canada	23
AR - Argentina	16
ID - Indonesia	15
TW - Taiwan	15
NL - Olanda	12
AT - Austria	11
SE - Svezia	9
ES - Italia	8
IN - India	8
JP - Giappone	8
CO - Colombia	7
EC - Ecuador	7
IQ - Iraq	7
MX - Messico	6
CL - Cile	5
LT - Lituania	5
MY - Malesia	5
RO - Romania	5
PK - Pakistan	4
PL - Polonia	4
ZA - Sudafrica	4
PH - Filippine	3
PY - Paraguay	3
AE - Emirati Arabi Uniti	2
CR - Costa Rica	2
IE - Irlanda	2
KE - Kenya	2
MA - Marocco	2
NP - Nepal	2
PR - Porto Rico	2
AZ - Azerbaigian	1
BA - Bosnia-Erzegovina	1
BG - Bulgaria	1
BO - Bolivia	1
CG - Congo	1
CZ - Repubblica Ceca	1
DK - Danimarca	1
DZ - Algeria	1
EE - Estonia	1
GT - Guatemala	1
HN - Honduras	1
JM - Giamaica	1
KZ - Kazakistan	1
MN - Mongolia	1
NZ - Nuova Zelanda	1
OM - Oman	1
PE - Perù	1
RS - Serbia	1
SC - Seychelles	1
SK - Slovacchia (Repubblica Slovacca)	1
SR - Suriname	1
TH - Thailandia	1
TN - Tunisia	1
TR - Turchia	1
TT - Trinidad e Tobago	1
UY - Uruguay	1
VC - Saint Vincent e Grenadine	1
XK - ???statistics.table.value.countryCode.XK???	1
Totale	2.838

Nome	#
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging	348
Il ruolo della carica intrappolata sull’affidabilità e la degradazione negli ossidi	270
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks	260
The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena	214
Evaluation of Imprint and Multi-Level Dynamics in Ferroelectric Capacitors	209
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs	208
Impedance Spectroscopy of Ferroelectric Capacitors and Ferroelectric Tunnel Junctions	203
The Impact of Electrostatic Interactions between Defects on the Characteristics of Random Telegraph Noise	202
Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide	188
Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals	187
Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by means of Impedance Spectroscopy	177
The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation	141
A Novel D2 Plasma Treatment for Defect Passivation: From Modeling to Process Optimization	140
Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability	111
Totale	2.858

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2022/2023	44	0	0	0	2	4	4	2	3	4	2	8	15
2023/2024	197	10	9	14	21	24	4	23	23	6	2	12	49
2024/2025	778	33	15	21	54	87	103	50	34	71	45	136	129
2025/2026	1.352	136	126	127	113	181	72	153	41	134	132	85	52
2026/2027	487	91	245	67	84	0	0	0	0	0	0	0	0
Totale													2.858