PADOVANI, ANDREA
 Distribuzione geografica
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Continente #
NA - Nord America 21.254
AS - Asia 10.979
EU - Europa 8.431
SA - Sud America 1.324
AF - Africa 173
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 13
Totale 42.193
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Nazione #
US - Stati Uniti d'America 20.943
SG - Singapore 3.337
CN - Cina 3.040
GB - Regno Unito 2.078
HK - Hong Kong 1.708
IT - Italia 1.034
PL - Polonia 1.029
BR - Brasile 1.001
VN - Vietnam 981
SE - Svezia 862
DE - Germania 723
KR - Corea 520
RU - Federazione Russa 392
TR - Turchia 375
FI - Finlandia 374
UA - Ucraina 365
FR - Francia 360
IE - Irlanda 299
IN - India 207
NL - Olanda 185
ES - Italia 172
CA - Canada 163
BG - Bulgaria 160
AR - Argentina 124
PT - Portogallo 121
TW - Taiwan 112
BD - Bangladesh 111
JP - Giappone 90
ID - Indonesia 81
MX - Messico 80
IQ - Iraq 69
BE - Belgio 61
AE - Emirati Arabi Uniti 54
CH - Svizzera 54
PK - Pakistan 53
ZA - Sudafrica 53
EC - Ecuador 49
CO - Colombia 36
AT - Austria 32
SA - Arabia Saudita 31
MA - Marocco 29
CL - Cile 28
LU - Lussemburgo 28
VE - Venezuela 24
MY - Malesia 23
PY - Paraguay 21
IR - Iran 20
PH - Filippine 20
EG - Egitto 17
CZ - Repubblica Ceca 16
IL - Israele 16
DZ - Algeria 15
TN - Tunisia 15
EU - Europa 14
JO - Giordania 14
LT - Lituania 14
UY - Uruguay 14
AZ - Azerbaigian 13
PE - Perù 13
RO - Romania 13
KZ - Kazakistan 12
NP - Nepal 12
AU - Australia 11
BO - Bolivia 11
DO - Repubblica Dominicana 11
GR - Grecia 11
TH - Thailandia 11
UZ - Uzbekistan 11
BY - Bielorussia 10
JM - Giamaica 10
KE - Kenya 10
CR - Costa Rica 7
ET - Etiopia 7
OM - Oman 7
TT - Trinidad e Tobago 7
AL - Albania 6
CU - Cuba 6
CY - Cipro 6
SN - Senegal 6
AM - Armenia 5
BH - Bahrain 5
HN - Honduras 5
KG - Kirghizistan 5
MD - Moldavia 5
NI - Nicaragua 5
BB - Barbados 4
EE - Estonia 4
GE - Georgia 4
GT - Guatemala 4
HU - Ungheria 4
NG - Nigeria 4
QA - Qatar 4
CI - Costa d'Avorio 3
DK - Danimarca 3
LK - Sri Lanka 3
LV - Lettonia 3
PA - Panama 3
PS - Palestinian Territory 3
RS - Serbia 3
SI - Slovenia 3
Totale 42.140
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Città #
Fairfield 2.264
Singapore 2.054
Santa Clara 1.950
Ashburn 1.895
Hong Kong 1.681
Woodbridge 1.422
Southend 1.322
Chandler 1.130
Houston 1.067
Warsaw 1.020
Hefei 962
Seattle 908
Ann Arbor 774
San Jose 715
Wilmington 714
Cambridge 693
Jacksonville 652
Nyköping 580
Beijing 506
Dearborn 503
London 474
Chicago 379
Seoul 377
Modena 370
Ho Chi Minh City 299
The Dalles 294
Los Angeles 285
Dublin 279
Hanoi 251
San Diego 233
Helsinki 227
Izmir 226
Council Bluffs 216
Buffalo 206
Princeton 171
New York 161
Sofia 150
Lauterbourg 134
Eugene 124
Moscow 115
Badalona 101
São Paulo 99
Boardman 97
Shanghai 88
Dallas 87
Frankfurt am Main 87
Columbus 81
Milan 81
Munich 81
Salt Lake City 76
Grafing 75
East Aurora 65
Redwood City 65
Des Moines 63
Tokyo 63
Guangzhou 62
Da Nang 57
Atlanta 56
Taipei 55
Amsterdam 50
Bremen 50
Tampa 49
Orem 48
Wuhan 46
Montreal 45
Washington 42
Brooklyn 40
Chennai 40
Haiphong 37
Brantford 36
Delfgauw 36
Bologna 35
Redondo Beach 34
Elk Grove Village 33
Jakarta 33
Leesburg 33
Phoenix 33
Rio de Janeiro 32
Rome 32
Mexico City 30
Toronto 30
Baghdad 28
Dhaka 28
Turku 28
San Francisco 27
Belo Horizonte 26
Poplar 26
Groningen 25
Hangzhou 25
Reggio Emilia 25
Shenzhen 25
Nanjing 24
Denver 23
Mumbai 23
Nuremberg 23
Parma 23
Falls Church 22
Norwalk 22
Boston 21
Brussels 21
Totale 30.531
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Nome #
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 748
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 685
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks 602
Leakage current in HfO2 stacks: from physical to compact modeling 480
A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices 406
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors 397
A microscopic physical description of RTN current fluctuations in HfOx RRAM 372
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 370
Recommended Methods to Study Resistive Switching Devices 368
Random telegraph noise: Measurement, data analysis, and interpretation 367
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 365
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 362
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 347
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 342
Dielectric breakdown of oxide films in electronic devices 330
Leakage current through the poly-crystalline HfO2: trap densities at grains and grain boundaries 325
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 322
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 317
Progresses in Modeling HfOx RRAM Operations and Variability 312
Charge Transport and Degradation in HfO2 and HfOx Dielectrics 307
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 304
Metal oxide resistive memory switching mechanism based on conductive filament properties 304
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 302
A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects 301
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 298
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 298
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 297
On the RESET-SET transition in Phase Change Memories 296
A study of the leakage current in TiN/HfO2/TiN capacitors 295
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology 295
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 294
A Physical Model for Post-Breakdown Digital Gate Current Noise 292
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories 291
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability 291
RTS Noise Characterization of HfOx RRAM in High Resistive State 291
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer 289
Dielectric Reliability for Future Logic and Non-Volatile Memory Applications: a Statistical Simulation Analysis Approach 288
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 286
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 286
A simulation framework for modeling charge transport and degradation in high-k stacks 285
Self-rectifying behavior and analog switching under identical pulses using Tri-layer RRAM crossbar array for neuromorphic systems 283
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 283
Grain boundary-driven leakage path formation in HfO2 dielectrics 283
Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors 282
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS 281
Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: experiments and simulations 277
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 275
A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements 272
A microscopic mechanism of dielectric breakdown in SiO2films: An insight from multi-scale modeling 271
Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory 270
Investigation of trapping/detrapping mechanisms in Al2O3 electron/hole traps and their influence on TANOS memory operations 270
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence 270
Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention 269
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 269
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching 266
Connecting electrical and structural dielectric characteristics 266
Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study 265
Modeling NAND Flash Memories for IC Design 265
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks 265
Feasibility of SIO2/Al2O3 tunnel dielectric for future Flash memories generations 264
Multiscale modeling for application-oriented optimization of resistive random-access memory 262
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 261
Compact modeling of TANOS program/erase operations for SPICE-like circuit simulations 259
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials 258
Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application 258
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices 256
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability 252
Connecting the physical and electrical properties of Hafnia-based RRAM 252
Root cause of degradation in novel HfO2-based ferroelectric memories 251
Hole Distributions in Erased NROM Devices: profiling method and effects on reliability 250
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 248
Microscopic understanding and modeling of HfO2 RRAM device physics 247
Monte-Carlo Simulations of Flash Memory Array Retention 246
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics 245
Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal 244
Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations 244
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 241
Modeling TANOS Memory Program Transients to Investigate Charge Trapping Dynamics 239
Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States 239
Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling 239
Modeling NAND Flash memories for circuit simulations 238
Modeling of the forming operation in HfO2-base resistive switching memories 237
Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics 236
Random telegraph noise (RTN) in scaled RRAM devices 234
Dielectric morphology and RRAM resistive switching characteristics 234
Charge loss in TANOS devices caused by Vt sensing measurements during retention 232
Fundamental reliability issues of advanced charge-trapping Flash memory devices 230
Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications 230
A technique to extract high-k IPD stack layer thicknesses from C-V measurements 227
Connecting electrical and structural dielectric characteristics 225
New insights into SILC-based life time extraction 225
Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs 224
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 224
SET switching effects on PCM endurance 222
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing 222
Leakage Current - Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices 219
Connecting RRAM Performance to the Properties of the Hafnia-based Dielectrics 218
Physical modeling of charge transport and degradation in HfO 2 stacks for logic device and memory applications 218
Random telegraph noise in 2D hexagonal boron nitride dielectric films 218
BELLO: A post-processing tool for the local-order analysis of disordered systems 214
Totale 28.971
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Categoria #
all - tutte 159.110
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 159.110
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.027 0 0 0 0 0 0 0 0 0 553 280 194
2021/20223.246 199 301 330 123 77 278 149 147 324 282 738 298
2022/20233.119 272 382 226 223 363 520 46 326 390 41 165 165
2023/20242.460 122 182 132 283 587 307 178 268 31 64 59 247
2024/20258.176 442 94 98 538 1.337 1.034 640 484 864 348 1.098 1.199
2025/202613.052 925 830 1.167 1.112 1.941 1.848 1.877 697 1.415 1.240 0 0
Totale 42.459