PADOVANI, ANDREA
 Distribuzione geografica
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Continente #
NA - Nord America 27.479
AS - Asia 11.779
EU - Europa 9.150
SA - Sud America 1.399
Continente sconosciuto - Info sul continente non disponibili 313
AF - Africa 183
OC - Oceania 16
Totale 50.319
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Nazione #
US - Stati Uniti d'America 26.815
SG - Singapore 3.444
CN - Cina 3.148
GB - Regno Unito 2.125
HK - Hong Kong 1.742
IT - Italia 1.542
BR - Brasile 1.036
PL - Polonia 1.034
VN - Vietnam 986
SE - Svezia 864
DE - Germania 761
KR - Corea 565
BD - Bangladesh 519
RU - Federazione Russa 408
FR - Francia 386
FI - Finlandia 382
TR - Turchia 375
UA - Ucraina 367
CA - Canada 308
IE - Irlanda 308
IN - India 222
NL - Olanda 193
ES - Italia 176
BG - Bulgaria 160
AR - Argentina 134
TW - Taiwan 123
PT - Portogallo 122
JP - Giappone 106
MX - Messico 91
ID - Indonesia 89
BE - Belgio 72
IQ - Iraq 70
CH - Svizzera 59
AE - Emirati Arabi Uniti 57
PK - Pakistan 55
ZA - Sudafrica 55
CO - Colombia 53
EC - Ecuador 53
CR - Costa Rica 45
AT - Austria 36
IL - Israele 33
SA - Arabia Saudita 33
MY - Malesia 32
CL - Cile 31
GT - Guatemala 31
JM - Giamaica 30
MA - Marocco 29
TT - Trinidad e Tobago 29
LU - Lussemburgo 28
VE - Venezuela 28
PR - Porto Rico 23
CW - ???statistics.table.value.countryCode.CW??? 21
PY - Paraguay 21
IR - Iran 20
NI - Nicaragua 20
PH - Filippine 20
EG - Egitto 19
HN - Honduras 18
CZ - Repubblica Ceca 17
GP - Guadalupe 16
TN - Tunisia 16
BY - Bielorussia 15
DZ - Algeria 15
LT - Lituania 15
EU - Europa 14
GR - Grecia 14
JO - Giordania 14
NP - Nepal 14
PE - Perù 14
TH - Thailandia 14
UY - Uruguay 14
AU - Australia 13
AZ - Azerbaigian 13
EE - Estonia 13
RO - Romania 13
KZ - Kazakistan 12
UZ - Uzbekistan 12
BO - Bolivia 11
DO - Repubblica Dominicana 11
KE - Kenya 11
SV - El Salvador 11
CU - Cuba 8
AM - Armenia 7
ET - Etiopia 7
OM - Oman 7
AL - Albania 6
BB - Barbados 6
CY - Cipro 6
DK - Danimarca 6
MD - Moldavia 6
SC - Seychelles 6
SN - Senegal 6
BH - Bahrain 5
KG - Kirghizistan 5
PA - Panama 5
GE - Georgia 4
HU - Ungheria 4
LK - Sri Lanka 4
NG - Nigeria 4
QA - Qatar 4
Totale 49.970
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Città #
Ashburn 3.444
Fairfield 2.264
Santa Clara 2.139
Singapore 2.094
Hong Kong 1.708
Woodbridge 1.423
San Jose 1.380
Southend 1.322
Chandler 1.130
Houston 1.081
Seattle 1.032
Warsaw 1.022
Hefei 962
Council Bluffs 899
Ann Arbor 786
Wilmington 717
Cambridge 695
Jacksonville 661
Nyköping 580
Beijing 532
Dearborn 503
London 487
Chicago 426
Los Angeles 426
Seoul 381
Modena 374
The Dalles 307
Ho Chi Minh City 299
Dublin 279
New York 274
Hanoi 254
San Diego 244
Buffalo 239
Helsinki 227
Izmir 226
Milan 198
Princeton 172
Sofia 150
Lauterbourg 134
Columbus 132
Dallas 125
Eugene 124
Boardman 117
Moscow 116
São Paulo 110
Badalona 101
Saint Augustine 98
Shanghai 95
Frankfurt am Main 91
Salt Lake City 83
Munich 81
Atlanta 80
Tokyo 76
Grafing 75
Rome 73
Des Moines 67
East Aurora 65
Redwood City 65
Guangzhou 63
Montreal 63
Brooklyn 62
Oakland 61
Taipei 58
Washington 58
Da Nang 57
Phoenix 57
Orem 56
Tampa 54
Toronto 53
Amsterdam 52
Bremen 50
San Francisco 47
Wuhan 47
Bologna 43
Chennai 43
Elk Grove Village 40
Haiphong 37
Mexico City 37
Brantford 36
Delfgauw 36
Denver 35
Leesburg 34
Redondo Beach 34
Jakarta 33
Rio de Janeiro 32
Boston 30
North Bergen 30
Dhaka 29
San José 29
Baghdad 28
Miano 28
Reggio Emilia 28
Turku 28
Brussels 27
Charlotte 27
Parma 27
Belo Horizonte 26
Newark 26
Philadelphia 26
Poplar 26
Totale 34.938
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Nome #
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 805
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 745
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks 660
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors 549
Leakage current in HfO2 stacks: from physical to compact modeling 526
A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices 456
A microscopic physical description of RTN current fluctuations in HfOx RRAM 425
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 421
Leakage current through the poly-crystalline HfO2: trap densities at grains and grain boundaries 418
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 418
Dielectric breakdown of oxide films in electronic devices 416
Random telegraph noise: Measurement, data analysis, and interpretation 407
Recommended Methods to Study Resistive Switching Devices 405
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 404
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 402
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 389
Metal oxide resistive memory switching mechanism based on conductive filament properties 376
A study of the leakage current in TiN/HfO2/TiN capacitors 356
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 354
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 354
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 353
Charge Transport and Degradation in HfO2 and HfOx Dielectrics 351
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks 350
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 349
A simulation framework for modeling charge transport and degradation in high-k stacks 346
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 345
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 339
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 338
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology 337
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 336
Progresses in Modeling HfOx RRAM Operations and Variability 335
Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics 335
Grain boundary-driven leakage path formation in HfO2 dielectrics 334
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 333
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability 332
Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling 324
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 324
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 323
A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects 321
A microscopic mechanism of dielectric breakdown in SiO2films: An insight from multi-scale modeling 321
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 321
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 320
RTS Noise Characterization of HfOx RRAM in High Resistive State 319
Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors 317
On the RESET-SET transition in Phase Change Memories 317
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS 317
A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements 317
A Physical Model for Post-Breakdown Digital Gate Current Noise 316
Self-rectifying behavior and analog switching under identical pulses using Tri-layer RRAM crossbar array for neuromorphic systems 315
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories 314
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer 313
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 313
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence 313
Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study 310
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching 309
Dielectric Reliability for Future Logic and Non-Volatile Memory Applications: a Statistical Simulation Analysis Approach 308
Feasibility of SIO2/Al2O3 tunnel dielectric for future Flash memories generations 306
Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory 304
Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal 301
Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application 301
Multiscale modeling for application-oriented optimization of resistive random-access memory 301
Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: experiments and simulations 299
Connecting the physical and electrical properties of Hafnia-based RRAM 299
Compact modeling of TANOS program/erase operations for SPICE-like circuit simulations 293
Modeling NAND Flash Memories for IC Design 293
Investigation of trapping/detrapping mechanisms in Al2O3 electron/hole traps and their influence on TANOS memory operations 289
Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention 288
Microscopic understanding and modeling of HfO2 RRAM device physics 287
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials 287
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability 286
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices 286
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 286
Hole Distributions in Erased NROM Devices: profiling method and effects on reliability 285
Connecting electrical and structural dielectric characteristics 283
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 283
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks 277
Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations 275
Root cause of degradation in novel HfO2-based ferroelectric memories 275
Connecting RRAM Performance to the Properties of the Hafnia-based Dielectrics 273
Monte-Carlo Simulations of Flash Memory Array Retention 273
Random telegraph noise (RTN) in scaled RRAM devices 271
Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States 269
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics 269
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films 269
Atomic Defects Profiling and Reliability of Amorphous Al2O3 Metal–Insulator–Metal Stacks 263
Modeling of the forming operation in HfO2-base resistive switching memories 262
Leakage Current - Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices 262
Modeling NAND Flash memories for circuit simulations 260
Modeling TANOS Memory Program Transients to Investigate Charge Trapping Dynamics 260
Fundamental reliability issues of advanced charge-trapping Flash memory devices 260
Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs 257
Charge loss in TANOS devices caused by Vt sensing measurements during retention 255
Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications 255
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 252
A technique to extract high-k IPD stack layer thicknesses from C-V measurements 249
Dielectric morphology and RRAM resistive switching characteristics 249
A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with Excellent Program/Erase & Endurance to 10^5 Cycles 247
New insights into SILC-based life time extraction 246
Multiscale modeling of oxide RRAM devices for memory applications: from material properties to device performance 246
Random telegraph noise in 2D hexagonal boron nitride dielectric films 245
Totale 33.127
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Categoria #
all - tutte 192.240
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 192.240
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.416 0 0 0 123 77 278 149 147 324 282 738 298
2022/20233.119 272 382 226 223 363 520 46 326 390 41 165 165
2023/20242.460 122 182 132 283 587 307 178 268 31 64 59 247
2024/20258.176 442 94 98 538 1.337 1.034 640 484 864 348 1.098 1.199
2025/202615.185 925 830 1.167 1.112 1.941 1.848 1.877 697 1.415 1.327 1.170 876
2026/20275.727 798 1.053 1.711 2.165 0 0 0 0 0 0 0 0
Totale 50.319