PADOVANI, ANDREA
 Distribuzione geografica
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Continente #
NA - Nord America 19.457
AS - Asia 8.377
EU - Europa 7.843
SA - Sud America 1.059
AF - Africa 96
Continente sconosciuto - Info sul continente non disponibili 18
OC - Oceania 10
Totale 36.860
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Nazione #
US - Stati Uniti d'America 19.282
CN - Cina 2.661
SG - Singapore 2.575
GB - Regno Unito 2.048
HK - Hong Kong 1.569
PL - Polonia 1.017
IT - Italia 972
BR - Brasile 859
SE - Svezia 854
DE - Germania 679
RU - Federazione Russa 383
TR - Turchia 350
KR - Corea 349
VN - Vietnam 347
UA - Ucraina 346
IE - Irlanda 299
FI - Finlandia 298
FR - Francia 199
ES - Italia 160
BG - Bulgaria 152
NL - Olanda 127
PT - Portogallo 114
IN - India 104
CA - Canada 94
TW - Taiwan 92
AR - Argentina 86
BE - Belgio 58
JP - Giappone 54
ID - Indonesia 52
BD - Bangladesh 45
MX - Messico 44
ZA - Sudafrica 37
EC - Ecuador 36
AT - Austria 29
IQ - Iraq 27
CH - Svizzera 23
IR - Iran 20
PK - Pakistan 19
CO - Colombia 18
LU - Lussemburgo 18
MA - Marocco 18
EU - Europa 14
PY - Paraguay 14
AE - Emirati Arabi Uniti 13
CL - Cile 13
IL - Israele 13
LT - Lituania 13
CZ - Repubblica Ceca 11
GR - Grecia 11
MY - Malesia 11
KZ - Kazakistan 10
VE - Venezuela 10
DZ - Algeria 9
JO - Giordania 9
SA - Arabia Saudita 9
AU - Australia 8
PE - Perù 8
UY - Uruguay 8
AZ - Azerbaigian 7
BO - Bolivia 7
RO - Romania 7
CU - Cuba 6
DO - Repubblica Dominicana 6
KE - Kenya 6
AL - Albania 5
AM - Armenia 5
TN - Tunisia 5
TT - Trinidad e Tobago 5
EG - Egitto 4
ET - Etiopia 4
HN - Honduras 4
JM - Giamaica 4
NP - Nepal 4
OM - Oman 4
SN - Senegal 4
UZ - Uzbekistan 4
BB - Barbados 3
BY - Bielorussia 3
CR - Costa Rica 3
HU - Ungheria 3
KG - Kirghizistan 3
LV - Lettonia 3
MD - Moldavia 3
NI - Nicaragua 3
PH - Filippine 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BH - Bahrain 2
CI - Costa d'Avorio 2
DK - Danimarca 2
GT - Guatemala 2
LK - Sri Lanka 2
NZ - Nuova Zelanda 2
SC - Seychelles 2
AD - Andorra 1
AF - Afghanistan, Repubblica islamica di 1
AO - Angola 1
BN - Brunei Darussalam 1
CW - ???statistics.table.value.countryCode.CW??? 1
CY - Cipro 1
EE - Estonia 1
Totale 36.839
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Città #
Fairfield 2.264
Santa Clara 1.903
Ashburn 1.585
Singapore 1.579
Hong Kong 1.550
Woodbridge 1.422
Southend 1.322
Chandler 1.130
Houston 1.064
Warsaw 1.014
Hefei 961
Seattle 908
Ann Arbor 774
Wilmington 714
Cambridge 693
Jacksonville 652
Nyköping 580
Dearborn 503
London 472
Beijing 418
Modena 366
Chicago 296
Dublin 279
Los Angeles 245
Izmir 224
San Diego 224
Seoul 223
Buffalo 202
The Dalles 178
Princeton 171
Council Bluffs 162
Helsinki 153
New York 149
Sofia 149
Eugene 124
Moscow 114
Ho Chi Minh City 106
Badalona 101
Boardman 97
São Paulo 85
Dallas 84
Hanoi 84
Munich 81
Shanghai 79
Columbus 78
Grafing 75
Salt Lake City 75
Frankfurt am Main 68
East Aurora 65
Milan 65
Redwood City 65
Des Moines 62
Bremen 50
Guangzhou 50
Atlanta 49
Tampa 49
Taipei 46
Montreal 41
Brooklyn 38
Wuhan 38
Tokyo 37
Amsterdam 34
Bologna 34
Redondo Beach 34
Elk Grove Village 33
Leesburg 33
Delfgauw 32
Rio de Janeiro 28
Turku 28
Jakarta 27
Phoenix 27
Rome 27
Chennai 26
Poplar 26
Groningen 25
Belo Horizonte 24
San Francisco 24
Toronto 24
Parma 23
Falls Church 22
Norwalk 22
Reggio Emilia 22
Denver 21
Kent 21
Nanjing 21
Orem 21
Shenzhen 21
Boston 20
Stockholm 20
Brussels 19
Haiphong 19
Kunming 19
San Mateo 19
Sterling 19
Da Nang 18
Falkenstein 18
Girona 18
Kilburn 18
Nuremberg 18
Zhengzhou 17
Totale 27.357
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Nome #
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 692
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 640
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks 572
Leakage current in HfO2 stacks: from physical to compact modeling 425
A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices 359
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 349
Recommended Methods to Study Resistive Switching Devices 332
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 331
A microscopic physical description of RTN current fluctuations in HfOx RRAM 328
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 324
Random telegraph noise: Measurement, data analysis, and interpretation 317
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 308
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 303
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 296
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 290
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors 289
Progresses in Modeling HfOx RRAM Operations and Variability 288
Dielectric breakdown of oxide films in electronic devices 277
A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects 277
On the RESET-SET transition in Phase Change Memories 273
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 272
A Physical Model for Post-Breakdown Digital Gate Current Noise 268
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability 268
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 268
Leakage current through the poly-crystalline HfO2: trap densities at grains and grain boundaries 267
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 267
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories 266
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 266
Charge Transport and Degradation in HfO2 and HfOx Dielectrics 265
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer 263
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 263
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 263
RTS Noise Characterization of HfOx RRAM in High Resistive State 262
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 261
A study of the leakage current in TiN/HfO2/TiN capacitors 259
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS 259
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 258
Self-rectifying behavior and analog switching under identical pulses using Tri-layer RRAM crossbar array for neuromorphic systems 258
Dielectric Reliability for Future Logic and Non-Volatile Memory Applications: a Statistical Simulation Analysis Approach 254
Investigation of trapping/detrapping mechanisms in Al2O3 electron/hole traps and their influence on TANOS memory operations 253
Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: experiments and simulations 252
A simulation framework for modeling charge transport and degradation in high-k stacks 249
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 249
Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory 248
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 248
Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors 247
A microscopic mechanism of dielectric breakdown in SiO2films: An insight from multi-scale modeling 246
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology 246
Connecting electrical and structural dielectric characteristics 245
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 245
Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention 243
A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements 243
Grain boundary-driven leakage path formation in HfO2 dielectrics 243
Modeling NAND Flash Memories for IC Design 241
Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study 240
Compact modeling of TANOS program/erase operations for SPICE-like circuit simulations 238
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence 238
Feasibility of SIO2/Al2O3 tunnel dielectric for future Flash memories generations 236
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices 235
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 233
Root cause of degradation in novel HfO2-based ferroelectric memories 232
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching 231
Microscopic understanding and modeling of HfO2 RRAM device physics 231
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials 230
Connecting the physical and electrical properties of Hafnia-based RRAM 230
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability 229
Metal oxide resistive memory switching mechanism based on conductive filament properties 229
Multiscale modeling for application-oriented optimization of resistive random-access memory 227
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 226
Hole Distributions in Erased NROM Devices: profiling method and effects on reliability 224
Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application 223
Modeling TANOS Memory Program Transients to Investigate Charge Trapping Dynamics 220
Charge loss in TANOS devices caused by Vt sensing measurements during retention 220
Modeling NAND Flash memories for circuit simulations 219
Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling 219
Monte-Carlo Simulations of Flash Memory Array Retention 219
Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications 217
Dielectric morphology and RRAM resistive switching characteristics 216
Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations 215
Connecting electrical and structural dielectric characteristics 212
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 212
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks 212
Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal 210
Random telegraph noise (RTN) in scaled RRAM devices 209
Modeling of the forming operation in HfO2-base resistive switching memories 208
Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States 207
Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs 206
New insights into SILC-based life time extraction 206
SET switching effects on PCM endurance 206
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics 206
Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics 206
A technique to extract high-k IPD stack layer thicknesses from C-V measurements 203
Fundamental reliability issues of advanced charge-trapping Flash memory devices 202
Random telegraph noise in 2D hexagonal boron nitride dielectric films 200
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing 199
Leakage Current - Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices 197
High-k related reliability issues in advanced Non-Volatile Memories 196
Physical modeling of charge transport and degradation in HfO 2 stacks for logic device and memory applications 195
Connecting RRAM Performance to the Properties of the Hafnia-based Dielectrics 194
Statistical Methodologies for Integrated Circuits Design 191
Totale 25.929
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Categoria #
all - tutte 148.461
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 148.461
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.500 0 0 0 0 0 403 312 503 255 553 280 194
2021/20223.246 199 301 330 123 77 278 149 147 324 282 738 298
2022/20233.119 272 382 226 223 363 520 46 326 390 41 165 165
2023/20242.460 122 182 132 283 587 307 178 268 31 64 59 247
2024/20258.176 442 94 98 538 1.337 1.034 640 484 864 348 1.098 1.199
2025/20267.708 925 830 1.167 1.112 1.941 1.733 0 0 0 0 0 0
Totale 37.115