ESPOSTO, Michele
 Distribuzione geografica
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Continente #
NA - Nord America 2.608
AS - Asia 1.275
EU - Europa 897
SA - Sud America 164
AF - Africa 23
OC - Oceania 2
Totale 4.969
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Nazione #
US - Stati Uniti d'America 2.582
SG - Singapore 430
CN - Cina 328
GB - Regno Unito 314
VN - Vietnam 165
HK - Hong Kong 153
SE - Svezia 146
BR - Brasile 120
RU - Federazione Russa 80
DE - Germania 77
FR - Francia 58
UA - Ucraina 55
TR - Turchia 51
IT - Italia 50
FI - Finlandia 43
KR - Corea 37
IN - India 34
BG - Bulgaria 23
IQ - Iraq 16
BE - Belgio 14
BD - Bangladesh 13
AR - Argentina 11
MX - Messico 11
PL - Polonia 10
ZA - Sudafrica 9
CO - Colombia 8
EC - Ecuador 8
CA - Canada 7
UZ - Uzbekistan 7
IE - Irlanda 6
AE - Emirati Arabi Uniti 5
NL - Olanda 5
PH - Filippine 5
PK - Pakistan 5
UY - Uruguay 4
CL - Cile 3
EG - Egitto 3
JM - Giamaica 3
JO - Giordania 3
JP - Giappone 3
MA - Marocco 3
SA - Arabia Saudita 3
TN - Tunisia 3
TW - Taiwan 3
VE - Venezuela 3
AL - Albania 2
AU - Australia 2
BO - Bolivia 2
DK - Danimarca 2
GR - Grecia 2
ID - Indonesia 2
KE - Kenya 2
LT - Lituania 2
LV - Lettonia 2
PE - Perù 2
PY - Paraguay 2
AM - Armenia 1
AT - Austria 1
AZ - Azerbaigian 1
BB - Barbados 1
BH - Bahrain 1
BS - Bahamas 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
DZ - Algeria 1
EE - Estonia 1
ES - Italia 1
GE - Georgia 1
IR - Iran 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
LB - Libano 1
LK - Sri Lanka 1
MY - Malesia 1
NO - Norvegia 1
PA - Panama 1
PT - Portogallo 1
QA - Qatar 1
RO - Romania 1
SO - Somalia 1
SR - Suriname 1
SV - El Salvador 1
Totale 4.969
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Città #
Singapore 257
Fairfield 251
Santa Clara 251
Ashburn 238
Chandler 201
Southend 198
Woodbridge 166
Houston 157
Hong Kong 151
Ann Arbor 122
Hefei 119
Jacksonville 118
Seattle 102
Nyköping 95
Dearborn 89
Wilmington 87
San Jose 79
Cambridge 75
Beijing 59
Ho Chi Minh City 52
London 49
Hanoi 42
Seoul 36
Los Angeles 30
Council Bluffs 29
Helsinki 23
Sofia 22
New York 21
San Diego 21
Chicago 20
Eugene 20
Izmir 20
Kent 20
Princeton 20
Lauterbourg 18
The Dalles 18
São Paulo 15
Moscow 13
Brussels 12
Des Moines 12
Buffalo 11
Da Nang 11
Lyon 9
Dallas 8
Milan 8
Orem 8
Bremen 7
Haiphong 7
Salt Lake City 7
San Francisco 7
Shanghai 7
Dublin 6
Johannesburg 6
Miano 6
Munich 6
Tashkent 6
Warsaw 6
Baghdad 5
Bengaluru 5
Bogotá 5
Frankfurt am Main 5
Grafing 5
Quito 5
Saint Petersburg 5
Atlanta 4
Boisar 4
Brasília 4
Guangzhou 4
Modena 4
Redwood City 4
Rio de Janeiro 4
Wallingford 4
Amman 3
Bexley 3
Boardman 3
Bordeaux 3
Boston 3
Brooklyn 3
Columbus 3
Dongguan 3
Erbil 3
Fuzhou 3
Ha Long 3
Kingston 3
Manchester 3
Mexico City 3
Montreal 3
Mumbai 3
Nanded 3
Norwalk 3
San Mateo 3
Taipei 3
Thái Bình 3
Thái Nguyên 3
Tokyo 3
Wroclaw 3
Americana 2
Amsterdam 2
Auburn Hills 2
Bangalore 2
Totale 3.601
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Nome #
Analytical Model for Power Switching GaN-Based HEMT Design 336
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 322
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements 302
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 291
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 291
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 287
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 286
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 279
Study of GaN HEMTs electrical degradation by means of numerical simulations 274
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 271
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 240
Design of field-plated InP-based HEMTs 231
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement 231
Trapping phenomena in field-plated high power GaAs pHEMTs 219
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 216
Design of GaN HEMTs for Power Switching Operation 192
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 192
GaN Hemt Degradation induced by Reverse Gate Bias Stress 186
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 183
Reverse gate bias stress induced degradation of GaN HEMT 168
Totale 4.997
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Categoria #
all - tutte 16.702
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 16.702
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202121 0 0 0 0 0 0 0 0 0 0 0 21
2021/2022364 10 80 24 16 1 15 22 6 32 30 86 42
2022/2023444 46 66 39 52 42 79 4 53 38 4 10 11
2023/2024201 7 10 20 26 57 10 13 36 8 1 2 11
2024/2025940 31 7 6 71 172 111 55 85 124 16 103 159
2025/20261.364 69 95 138 120 214 111 184 74 137 128 69 25
Totale 4.997