ESPOSTO, Michele
 Distribuzione geografica
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Continente #
NA - Nord America 2.875
AS - Asia 1.286
EU - Europa 912
SA - Sud America 171
Continente sconosciuto - Info sul continente non disponibili 28
AF - Africa 23
OC - Oceania 2
Totale 5.297
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Nazione #
US - Stati Uniti d'America 2.841
SG - Singapore 433
CN - Cina 330
GB - Regno Unito 314
VN - Vietnam 165
HK - Hong Kong 154
SE - Svezia 146
BR - Brasile 125
RU - Federazione Russa 80
DE - Germania 77
IT - Italia 65
FR - Francia 58
UA - Ucraina 55
TR - Turchia 51
FI - Finlandia 43
IN - India 37
KR - Corea 37
BG - Bulgaria 23
IQ - Iraq 16
BD - Bangladesh 14
BE - Belgio 14
AR - Argentina 11
MX - Messico 11
CA - Canada 10
CO - Colombia 10
PL - Polonia 10
ZA - Sudafrica 9
EC - Ecuador 8
UZ - Uzbekistan 7
IE - Irlanda 6
AE - Emirati Arabi Uniti 5
NL - Olanda 5
PH - Filippine 5
PK - Pakistan 5
JM - Giamaica 4
JP - Giappone 4
UY - Uruguay 4
CL - Cile 3
EG - Egitto 3
JO - Giordania 3
MA - Marocco 3
SA - Arabia Saudita 3
TN - Tunisia 3
TW - Taiwan 3
VE - Venezuela 3
AL - Albania 2
AU - Australia 2
BO - Bolivia 2
DK - Danimarca 2
GR - Grecia 2
GT - Guatemala 2
ID - Indonesia 2
KE - Kenya 2
LT - Lituania 2
LV - Lettonia 2
PE - Perù 2
PY - Paraguay 2
AM - Armenia 1
AT - Austria 1
AZ - Azerbaigian 1
BB - Barbados 1
BH - Bahrain 1
BS - Bahamas 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
DZ - Algeria 1
EE - Estonia 1
ES - Italia 1
GE - Georgia 1
GP - Guadalupe 1
IR - Iran 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
LB - Libano 1
LK - Sri Lanka 1
MY - Malesia 1
NO - Norvegia 1
PA - Panama 1
PT - Portogallo 1
QA - Qatar 1
RO - Romania 1
SO - Somalia 1
SR - Suriname 1
SV - El Salvador 1
TT - Trinidad e Tobago 1
Totale 5.269
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Città #
Ashburn 309
Singapore 258
Santa Clara 256
Fairfield 251
Chandler 201
Southend 198
Woodbridge 166
Houston 157
Hong Kong 152
Ann Arbor 122
Hefei 119
Jacksonville 118
Seattle 103
San Jose 101
Nyköping 95
Dearborn 89
Wilmington 88
Council Bluffs 81
Cambridge 75
Beijing 60
Ho Chi Minh City 52
London 49
Hanoi 42
Seoul 36
Los Angeles 33
Helsinki 23
Sofia 22
Chicago 21
New York 21
San Diego 21
Eugene 20
Izmir 20
Kent 20
Princeton 20
Lauterbourg 18
The Dalles 18
São Paulo 15
Dallas 14
Milan 13
Moscow 13
Brussels 12
Buffalo 12
Des Moines 12
Da Nang 11
Columbus 9
Lyon 9
Orem 8
San Francisco 8
Bogotá 7
Bremen 7
Haiphong 7
Salt Lake City 7
Shanghai 7
Dublin 6
Johannesburg 6
Miano 6
Munich 6
Tashkent 6
Warsaw 6
Atlanta 5
Baghdad 5
Bengaluru 5
Brasília 5
Frankfurt am Main 5
Grafing 5
Quito 5
Saint Petersburg 5
Boisar 4
Brooklyn 4
Guangzhou 4
Kingston 4
Modena 4
Phoenix 4
Redwood City 4
Rio de Janeiro 4
Rome 4
Wallingford 4
Amman 3
Bexley 3
Boardman 3
Bordeaux 3
Boston 3
Dongguan 3
Erbil 3
Fortaleza 3
Fuzhou 3
Ha Long 3
Lima 3
Manchester 3
Mexico City 3
Montreal 3
Mumbai 3
Nanded 3
Newark 3
Norwalk 3
Queens 3
San Mateo 3
Taipei 3
Thái Bình 3
Thái Nguyên 3
Totale 3.791
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Nome #
Analytical Model for Power Switching GaN-Based HEMT Design 353
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 332
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements 322
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 308
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 307
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 304
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 302
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 301
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 287
Study of GaN HEMTs electrical degradation by means of numerical simulations 284
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 255
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement 250
Design of field-plated InP-based HEMTs 242
Trapping phenomena in field-plated high power GaAs pHEMTs 230
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 228
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 211
GaN Hemt Degradation induced by Reverse Gate Bias Stress 204
Design of GaN HEMTs for Power Switching Operation 203
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 195
Reverse gate bias stress induced degradation of GaN HEMT 179
Totale 5.297
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Categoria #
all - tutte 18.658
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 18.658
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022250 0 0 0 16 1 15 22 6 32 30 86 42
2022/2023444 46 66 39 52 42 79 4 53 38 4 10 11
2023/2024201 7 10 20 26 57 10 13 36 8 1 2 11
2024/2025940 31 7 6 71 172 111 55 85 124 16 103 159
2025/20261.376 69 95 138 120 214 111 184 74 137 128 69 37
2026/2027288 34 70 93 91 0 0 0 0 0 0 0 0
Totale 5.297