VANDELLI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 5.949
EU - Europa 2.517
AS - Asia 2.474
SA - Sud America 317
Continente sconosciuto - Info sul continente non disponibili 79
AF - Africa 46
OC - Oceania 3
Totale 11.385
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Nazione #
US - Stati Uniti d'America 5.856
SG - Singapore 746
PL - Polonia 669
CN - Cina 576
GB - Regno Unito 543
HK - Hong Kong 361
IT - Italia 334
VN - Vietnam 253
BR - Brasile 227
SE - Svezia 190
DE - Germania 169
BD - Bangladesh 118
UA - Ucraina 112
RU - Federazione Russa 106
TR - Turchia 104
FI - Finlandia 100
KR - Corea 83
FR - Francia 77
IN - India 62
CA - Canada 58
NL - Olanda 57
BG - Bulgaria 44
PT - Portogallo 38
ES - Italia 28
AR - Argentina 26
IQ - Iraq 21
EC - Ecuador 19
ID - Indonesia 17
MX - Messico 17
PK - Pakistan 17
CO - Colombia 16
JP - Giappone 16
ZA - Sudafrica 16
TW - Taiwan 15
IR - Iran 14
CH - Svizzera 10
IE - Irlanda 10
MA - Marocco 10
AE - Emirati Arabi Uniti 8
CL - Cile 7
NP - Nepal 7
PE - Perù 7
SA - Arabia Saudita 7
DO - Repubblica Dominicana 6
EU - Europa 6
IL - Israele 6
RO - Romania 6
VE - Venezuela 6
JO - Giordania 5
KZ - Kazakistan 5
TN - Tunisia 5
AT - Austria 4
EG - Egitto 4
LT - Lituania 4
MY - Malesia 4
PH - Filippine 4
UY - Uruguay 4
AU - Australia 3
AZ - Azerbaigian 3
BB - Barbados 3
BE - Belgio 3
BO - Bolivia 3
CZ - Repubblica Ceca 3
DZ - Algeria 3
KG - Kirghizistan 3
NG - Nigeria 3
OM - Oman 3
TH - Thailandia 3
AM - Armenia 2
CR - Costa Rica 2
CY - Cipro 2
HU - Ungheria 2
KE - Kenya 2
MN - Mongolia 2
PY - Paraguay 2
QA - Qatar 2
SV - El Salvador 2
SY - Repubblica araba siriana 2
XK - ???statistics.table.value.countryCode.XK??? 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AD - Andorra 1
AL - Albania 1
BS - Bahamas 1
BY - Bielorussia 1
BZ - Belize 1
DK - Danimarca 1
GE - Georgia 1
GP - Guadalupe 1
JM - Giamaica 1
LB - Libano 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
MU - Mauritius 1
RE - Reunion 1
SI - Slovenia 1
SN - Senegal 1
UZ - Uzbekistan 1
VC - Saint Vincent e Grenadine 1
Totale 11.315
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Città #
Warsaw 666
Fairfield 648
Ashburn 589
Santa Clara 490
Singapore 475
Woodbridge 394
Southend 388
Hong Kong 348
Chandler 299
San Jose 280
Houston 277
Seattle 258
Ann Arbor 218
Wilmington 216
Jacksonville 187
Cambridge 182
Dearborn 178
Hefei 157
Nyköping 133
Modena 124
Beijing 114
London 109
Ho Chi Minh City 95
Council Bluffs 93
Los Angeles 81
San Diego 73
Chicago 72
Izmir 64
Seoul 60
Hanoi 57
Helsinki 57
New York 52
Princeton 41
The Dalles 41
Sofia 39
Eugene 37
Buffalo 36
Milan 35
Moscow 32
Frankfurt am Main 29
Lauterbourg 28
Washington 27
Redwood City 24
São Paulo 24
Munich 22
Girona 18
Shanghai 18
Des Moines 17
Salt Lake City 17
Delfgauw 16
Enschede 16
Brantford 14
Grafing 14
Tokyo 14
Dallas 13
Falls Church 13
Orem 13
Atlanta 12
Chennai 12
Columbus 12
Boardman 11
Montreal 11
Phoenix 11
Tampa 11
Toronto 10
Baghdad 9
Brooklyn 9
Dongguan 9
Haiphong 9
Johannesburg 9
Norwalk 9
Rome 9
San Francisco 9
Taipei 9
Wuhan 9
Ardabil 8
Augusta 8
Belo Horizonte 8
Bremen 8
Dublin 8
Mexico City 8
Miano 8
New Delhi 8
Rio de Janeiro 8
Saint Petersburg 8
San Mateo 8
Turku 8
Amsterdam 7
Brasília 7
Elk Grove Village 7
Thái Nguyên 7
Ankara 6
Boston 6
Da Nang 6
Guiyang 6
Hải Dương 6
Jakarta 6
Palermo 6
Poplar 6
Prescot 6
Totale 8.390
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Nome #
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 701
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks 623
A microscopic physical description of RTN current fluctuations in HfOx RRAM 393
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 380
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 373
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 332
Metal oxide resistive memory switching mechanism based on conductive filament properties 328
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 321
Progresses in Modeling HfOx RRAM Operations and Variability 320
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 313
A simulation framework for modeling charge transport and degradation in high-k stacks 309
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability 307
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 307
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology 306
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks 305
Grain boundary-driven leakage path formation in HfO2 dielectrics 298
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories 297
Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics 296
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching 289
Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal 279
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability 271
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs 268
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs 265
Microscopic understanding and modeling of HfO2 RRAM device physics 255
Connecting the physical and electrical properties of Hafnia-based RRAM 255
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 253
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics 251
Modeling of the forming operation in HfO2-base resistive switching memories 248
Random telegraph noise (RTN) in scaled RRAM devices 243
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 229
Physical modeling of charge transport and degradation in HfO 2 stacks for logic device and memory applications 229
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs 229
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology 218
Modeling the Effects of Different Forming Conditions on RRAM Conductive Filament Stability 217
SrTiOx for sub-20 nm DRAM technology nodes - Characterization and modeling 207
Modeling Temperature Dependency (6 - 400K) of the Leakage Current Through the SiO2/High-K Stacks 196
Modeling the charge transport and degradation in HfO 2 dielectric for reliability improvement and life-time predictions in logic and memory devices 186
Low Power RRAM with Improved HRS/LRS Uniformity through Efficient Filament Control Using CVS Forming 181
Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability 107
Totale 11.385
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Categoria #
all - tutte 40.265
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 40.265
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022784 36 104 74 31 9 52 44 38 97 62 172 65
2022/2023714 54 84 62 59 94 134 4 88 92 4 22 17
2023/2024490 12 38 35 59 116 61 24 65 5 7 24 44
2024/20251.847 102 14 18 136 324 244 164 145 169 62 207 262
2025/20263.740 201 122 231 225 455 840 410 152 320 330 276 178
2026/2027128 128 0 0 0 0 0 0 0 0 0 0 0
Totale 11.385