VANDELLI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 5.165
EU - Europa 2.285
AS - Asia 1.789
SA - Sud America 226
AF - Africa 25
Continente sconosciuto - Info sul continente non disponibili 9
OC - Oceania 3
Totale 9.502
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Nazione #
US - Stati Uniti d'America 5.126
PL - Polonia 666
SG - Singapore 557
GB - Regno Unito 537
CN - Cina 523
HK - Hong Kong 333
IT - Italia 231
SE - Svezia 187
BR - Brasile 176
DE - Germania 159
UA - Ucraina 106
RU - Federazione Russa 105
TR - Turchia 97
VN - Vietnam 93
FI - Finlandia 86
KR - Corea 53
BG - Bulgaria 41
FR - Francia 40
PT - Portogallo 37
IN - India 35
NL - Olanda 30
CA - Canada 28
ES - Italia 25
AR - Argentina 15
IR - Iran 14
EC - Ecuador 13
ID - Indonesia 12
ZA - Sudafrica 12
BD - Bangladesh 11
TW - Taiwan 11
IE - Irlanda 10
JP - Giappone 9
CO - Colombia 7
EU - Europa 6
IQ - Iraq 6
MX - Messico 6
IL - Israele 5
KZ - Kazakistan 5
MA - Marocco 5
CH - Svizzera 4
LT - Lituania 4
PK - Pakistan 4
UY - Uruguay 4
AU - Australia 3
AZ - Azerbaigian 3
CL - Cile 3
JO - Giordania 3
PE - Perù 3
RO - Romania 3
AE - Emirati Arabi Uniti 2
AM - Armenia 2
BB - Barbados 2
BE - Belgio 2
BO - Bolivia 2
CZ - Repubblica Ceca 2
DZ - Algeria 2
HU - Ungheria 2
KE - Kenya 2
KG - Kirghizistan 2
MY - Malesia 2
NP - Nepal 2
OM - Oman 2
PY - Paraguay 2
XK - ???statistics.table.value.countryCode.XK??? 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AD - Andorra 1
AL - Albania 1
AT - Austria 1
CY - Cipro 1
DK - Danimarca 1
DO - Repubblica Dominicana 1
EG - Egitto 1
GE - Georgia 1
GP - Guadalupe 1
JM - Giamaica 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
NG - Nigeria 1
RE - Reunion 1
SA - Arabia Saudita 1
SI - Slovenia 1
TN - Tunisia 1
VE - Venezuela 1
Totale 9.502
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Città #
Warsaw 665
Fairfield 648
Santa Clara 469
Ashburn 444
Woodbridge 394
Southend 388
Singapore 348
Hong Kong 324
Chandler 299
Houston 271
Seattle 257
Ann Arbor 218
Wilmington 215
Jacksonville 187
Cambridge 182
Dearborn 178
Hefei 157
Nyköping 133
Modena 122
London 108
Beijing 91
Los Angeles 67
Izmir 64
San Diego 64
Council Bluffs 59
Chicago 54
Helsinki 43
Princeton 41
Sofia 39
Ho Chi Minh City 38
Eugene 37
New York 37
Seoul 36
Moscow 32
The Dalles 28
Buffalo 25
Redwood City 24
Frankfurt am Main 23
Hanoi 23
Munich 22
São Paulo 19
Girona 18
Shanghai 17
Des Moines 16
Salt Lake City 16
Grafing 14
Falls Church 13
Dallas 12
Delfgauw 12
Columbus 11
Atlanta 10
Boardman 10
Norwalk 9
Tampa 9
Wuhan 9
Ardabil 8
Augusta 8
Belo Horizonte 8
Bremen 8
Dongguan 8
Dublin 8
Milan 8
Phoenix 8
Saint Petersburg 8
San Mateo 8
Taipei 8
Toronto 8
Turku 8
Brooklyn 7
Elk Grove Village 7
Johannesburg 7
Montreal 7
New Delhi 7
Rio de Janeiro 7
San Francisco 7
Tokyo 7
Brasília 6
Guiyang 6
Orem 6
Poplar 6
Prescot 6
Stanford 6
Stockholm 6
Varallo 6
Zhengzhou 6
Ankara 5
Baghdad 5
Boston 5
Chennai 5
Denver 5
Jodhpur 5
Ottawa 5
Quito 5
Thái Nguyên 5
Verona 5
Almaty 4
Amsterdam 4
Badalona 4
Bologna 4
Calgary 4
Totale 7.333
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Nome #
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 639
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks 572
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 331
A microscopic physical description of RTN current fluctuations in HfOx RRAM 328
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 303
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 296
Progresses in Modeling HfOx RRAM Operations and Variability 288
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 272
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability 268
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 267
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories 266
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 263
A simulation framework for modeling charge transport and degradation in high-k stacks 249
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology 246
Grain boundary-driven leakage path formation in HfO2 dielectrics 242
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching 231
Microscopic understanding and modeling of HfO2 RRAM device physics 231
Connecting the physical and electrical properties of Hafnia-based RRAM 230
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability 229
Metal oxide resistive memory switching mechanism based on conductive filament properties 229
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs 223
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs 219
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 212
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks 212
Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal 210
Random telegraph noise (RTN) in scaled RRAM devices 209
Modeling of the forming operation in HfO2-base resistive switching memories 208
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics 206
Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics 206
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs 198
SrTiOx for sub-20 nm DRAM technology nodes - Characterization and modeling 195
Physical modeling of charge transport and degradation in HfO 2 stacks for logic device and memory applications 195
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 187
Modeling the Effects of Different Forming Conditions on RRAM Conductive Filament Stability 187
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology 181
Modeling Temperature Dependency (6 - 400K) of the Leakage Current Through the SiO2/High-K Stacks 163
Low Power RRAM with Improved HRS/LRS Uniformity through Efficient Filament Control Using CVS Forming 160
Modeling the charge transport and degradation in HfO 2 dielectric for reliability improvement and life-time predictions in logic and memory devices 142
Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability 79
Totale 9.572
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Categoria #
all - tutte 35.008
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 35.008
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021639 0 0 0 0 0 77 81 146 72 121 81 61
2021/2022784 36 104 74 31 9 52 44 38 97 62 172 65
2022/2023714 54 84 62 59 94 134 4 88 92 4 22 17
2023/2024490 12 38 35 59 116 61 24 65 5 7 24 44
2024/20251.847 102 14 18 136 324 244 164 145 169 62 207 262
2025/20262.055 201 122 231 225 455 821 0 0 0 0 0 0
Totale 9.572