VANDELLI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 6.849
EU - Europa 2.581
AS - Asia 2.506
SA - Sud America 330
Continente sconosciuto - Info sul continente non disponibili 84
AF - Africa 49
OC - Oceania 3
Totale 12.402
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Nazione #
US - Stati Uniti d'America 6.698
SG - Singapore 748
PL - Polonia 669
CN - Cina 582
GB - Regno Unito 547
IT - Italia 363
HK - Hong Kong 361
VN - Vietnam 253
BR - Brasile 231
SE - Svezia 190
DE - Germania 172
BD - Bangladesh 121
RU - Federazione Russa 114
UA - Ucraina 113
TR - Turchia 104
FI - Finlandia 101
KR - Corea 86
FR - Francia 82
CA - Canada 81
IN - India 63
NL - Olanda 57
BG - Bulgaria 44
PT - Portogallo 38
ES - Italia 30
AR - Argentina 29
IQ - Iraq 21
EC - Ecuador 20
CO - Colombia 19
ID - Indonesia 19
PK - Pakistan 19
TW - Taiwan 18
IE - Irlanda 17
MX - Messico 17
JP - Giappone 16
ZA - Sudafrica 16
IR - Iran 14
IL - Israele 11
SA - Arabia Saudita 11
CH - Svizzera 10
MA - Marocco 10
CR - Costa Rica 9
AE - Emirati Arabi Uniti 8
CL - Cile 8
NP - Nepal 7
PE - Perù 7
VE - Venezuela 7
DO - Repubblica Dominicana 6
EU - Europa 6
NI - Nicaragua 6
RO - Romania 6
CW - ???statistics.table.value.countryCode.CW??? 5
GP - Guadalupe 5
JO - Giordania 5
KZ - Kazakistan 5
TN - Tunisia 5
AT - Austria 4
BB - Barbados 4
BE - Belgio 4
EG - Egitto 4
GT - Guatemala 4
LT - Lituania 4
MY - Malesia 4
PH - Filippine 4
PR - Porto Rico 4
SV - El Salvador 4
TH - Thailandia 4
UY - Uruguay 4
AU - Australia 3
AZ - Azerbaigian 3
BO - Bolivia 3
CZ - Repubblica Ceca 3
DZ - Algeria 3
KG - Kirghizistan 3
NG - Nigeria 3
OM - Oman 3
SC - Seychelles 3
TT - Trinidad e Tobago 3
AM - Armenia 2
CY - Cipro 2
DK - Danimarca 2
EE - Estonia 2
HU - Ungheria 2
JM - Giamaica 2
KE - Kenya 2
MN - Mongolia 2
PY - Paraguay 2
QA - Qatar 2
SY - Repubblica araba siriana 2
XK - ???statistics.table.value.countryCode.XK??? 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AD - Andorra 1
AL - Albania 1
BS - Bahamas 1
BY - Bielorussia 1
BZ - Belize 1
DM - Dominica 1
GE - Georgia 1
HN - Honduras 1
HT - Haiti 1
LB - Libano 1
Totale 12.323
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Città #
Ashburn 833
Warsaw 666
Fairfield 648
Santa Clara 501
Singapore 477
Woodbridge 394
Southend 388
Hong Kong 348
San Jose 320
Seattle 320
Chandler 299
Houston 278
Ann Arbor 218
Wilmington 216
Council Bluffs 196
Jacksonville 189
Cambridge 183
Dearborn 178
Hefei 157
Nyköping 133
Modena 124
Beijing 116
London 109
Ho Chi Minh City 95
Los Angeles 95
Chicago 90
San Diego 73
Izmir 64
Seoul 60
Hanoi 57
Helsinki 57
New York 57
Princeton 42
The Dalles 41
Sofia 39
Buffalo 38
Eugene 37
Milan 37
Moscow 32
Frankfurt am Main 30
Lauterbourg 28
Washington 28
Saint Augustine 26
São Paulo 26
Columbus 24
Redwood City 24
Munich 22
Shanghai 19
Girona 18
Salt Lake City 18
Des Moines 17
Emeryville 17
Dallas 16
Delfgauw 16
Enschede 16
Montreal 16
Oakland 16
Atlanta 15
Brantford 14
Brooklyn 14
Grafing 14
Tokyo 14
Toronto 14
Falls Church 13
Orem 13
Phoenix 13
Chennai 12
Rome 12
San Francisco 12
Tampa 12
Boardman 11
Denver 10
Norwalk 10
Baghdad 9
Dongguan 9
Haiphong 9
Johannesburg 9
Taipei 9
Wuhan 9
Ardabil 8
Augusta 8
Belo Horizonte 8
Brasília 8
Bremen 8
Dublin 8
Mexico City 8
Miano 8
New Delhi 8
Rio de Janeiro 8
Saint Petersburg 8
San Mateo 8
Turku 8
Amsterdam 7
Elk Grove Village 7
Thái Nguyên 7
Ankara 6
Bologna 6
Boston 6
Da Nang 6
Guiyang 6
Totale 8.994
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Nome #
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 745
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks 660
A microscopic physical description of RTN current fluctuations in HfOx RRAM 426
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 422
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 402
Metal oxide resistive memory switching mechanism based on conductive filament properties 378
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 355
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 353
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks 350
A simulation framework for modeling charge transport and degradation in high-k stacks 346
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 339
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 338
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology 337
Progresses in Modeling HfOx RRAM Operations and Variability 335
Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics 335
Grain boundary-driven leakage path formation in HfO2 dielectrics 334
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability 332
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories 315
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching 309
Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal 301
Connecting the physical and electrical properties of Hafnia-based RRAM 299
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs 292
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs 287
Microscopic understanding and modeling of HfO2 RRAM device physics 287
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability 286
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 286
Random telegraph noise (RTN) in scaled RRAM devices 271
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics 269
Modeling of the forming operation in HfO2-base resistive switching memories 262
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 252
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs 250
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology 240
Physical modeling of charge transport and degradation in HfO 2 stacks for logic device and memory applications 236
Modeling the Effects of Different Forming Conditions on RRAM Conductive Filament Stability 233
SrTiOx for sub-20 nm DRAM technology nodes - Characterization and modeling 215
Modeling the charge transport and degradation in HfO 2 dielectric for reliability improvement and life-time predictions in logic and memory devices 209
Modeling Temperature Dependency (6 - 400K) of the Leakage Current Through the SiO2/High-K Stacks 207
Low Power RRAM with Improved HRS/LRS Uniformity through Efficient Filament Control Using CVS Forming 195
Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability 114
Totale 12.402
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Categoria #
all - tutte 43.627
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.627
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022570 0 0 0 31 9 52 44 38 97 62 172 65
2022/2023714 54 84 62 59 94 134 4 88 92 4 22 17
2023/2024490 12 38 35 59 116 61 24 65 5 7 24 44
2024/20251.847 102 14 18 136 324 244 164 145 169 62 207 262
2025/20263.740 201 122 231 225 455 840 410 152 320 330 276 178
2026/20271.145 139 183 380 443 0 0 0 0 0 0 0 0
Totale 12.402