PUGLISI, Francesco Maria
 Distribuzione geografica
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Continente #
NA - Nord America 17.085
AS - Asia 10.258
EU - Europa 9.761
SA - Sud America 1.150
AF - Africa 173
OC - Oceania 15
Continente sconosciuto - Info sul continente non disponibili 11
Totale 38.453
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Nazione #
US - Stati Uniti d'America 16.823
SG - Singapore 3.116
CN - Cina 3.048
SE - Svezia 2.557
IT - Italia 1.933
GB - Regno Unito 1.555
HK - Hong Kong 1.300
BR - Brasile 887
DE - Germania 796
VN - Vietnam 780
PL - Polonia 689
KR - Corea 563
FR - Francia 470
FI - Finlandia 381
RU - Federazione Russa 327
JP - Giappone 324
IN - India 221
TR - Turchia 184
UA - Ucraina 182
IE - Irlanda 157
CA - Canada 140
NL - Olanda 137
ID - Indonesia 123
BG - Bulgaria 109
TW - Taiwan 98
BD - Bangladesh 95
ES - Italia 94
AR - Argentina 85
MX - Messico 81
PT - Portogallo 72
IQ - Iraq 63
BE - Belgio 58
AT - Austria 55
ZA - Sudafrica 51
AE - Emirati Arabi Uniti 46
PK - Pakistan 46
EC - Ecuador 45
PH - Filippine 40
CH - Svizzera 38
MA - Marocco 32
LT - Lituania 31
VE - Venezuela 30
IL - Israele 29
CO - Colombia 28
GR - Grecia 24
CL - Cile 23
MY - Malesia 23
SA - Arabia Saudita 21
PY - Paraguay 20
JO - Giordania 19
UZ - Uzbekistan 19
DZ - Algeria 18
TN - Tunisia 18
PE - Perù 17
TH - Thailandia 17
CZ - Repubblica Ceca 14
NP - Nepal 14
RO - Romania 14
DO - Repubblica Dominicana 11
AU - Australia 10
AZ - Azerbaigian 10
EG - Egitto 10
HU - Ungheria 10
IR - Iran 9
KE - Kenya 9
AL - Albania 8
ET - Etiopia 8
JM - Giamaica 8
UY - Uruguay 8
DK - Danimarca 7
RS - Serbia 7
EU - Europa 6
KZ - Kazakistan 6
LU - Lussemburgo 6
BY - Bielorussia 5
EE - Estonia 5
LB - Libano 5
NZ - Nuova Zelanda 5
SK - Slovacchia (Repubblica Slovacca) 5
SN - Senegal 5
AO - Angola 4
BO - Bolivia 4
CR - Costa Rica 4
GE - Georgia 4
MD - Moldavia 4
MN - Mongolia 4
OM - Oman 4
PS - Palestinian Territory 4
AM - Armenia 3
BN - Brunei Darussalam 3
CG - Congo 3
GY - Guiana 3
HN - Honduras 3
KW - Kuwait 3
NI - Nicaragua 3
PA - Panama 3
TT - Trinidad e Tobago 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AF - Afghanistan, Repubblica islamica di 2
CI - Costa d'Avorio 2
Totale 38.408
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Città #
Singapore 2.054
Fairfield 1.799
Stockholm 1.795
Ashburn 1.665
Santa Clara 1.593
Hong Kong 1.253
Houston 1.056
Hefei 1.030
Woodbridge 925
Chandler 912
Southend 875
San Jose 742
Seattle 701
Warsaw 682
Wilmington 584
Cambridge 581
Beijing 471
Chicago 434
Ann Arbor 421
Nyköping 418
London 415
Modena 377
Seoul 358
Helsinki 309
Tokyo 275
Jacksonville 270
Ho Chi Minh City 256
Los Angeles 253
Dearborn 251
The Dalles 248
Milan 194
Hanoi 183
San Diego 179
Council Bluffs 166
New York 160
Buffalo 146
Dublin 137
Leesburg 133
Bologna 125
Boardman 115
São Paulo 114
Izmir 113
Princeton 109
Dallas 105
Bremen 104
Sofia 104
Grafing 103
Lauterbourg 102
Moscow 98
Frankfurt am Main 92
East Aurora 90
Redwood City 84
Shanghai 82
Jakarta 81
Eugene 76
Columbus 68
Rome 67
Salt Lake City 60
Munich 58
Orem 57
Reggio Emilia 56
Guangzhou 53
Falkenstein 50
Chennai 46
Taipei 44
Wuhan 40
Da Nang 39
Amsterdam 37
Kent 37
Mantova 35
San Francisco 35
Toronto 34
Delfgauw 33
Johannesburg 33
Shenzhen 33
Atlanta 32
Mexico City 32
Brooklyn 31
Hangzhou 31
Nuremberg 30
Palaiseau 30
Vienna 29
Zhengzhou 29
Paris 28
Parma 28
Des Moines 27
Dresden 27
Redondo Beach 27
Brussels 26
Haiphong 26
Poplar 26
Rio de Janeiro 26
Baghdad 25
Tampa 24
Denver 23
Phoenix 23
Elk Grove Village 22
Falls Church 22
Brasília 21
Montreal 21
Totale 27.579
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Nome #
2D h-BN based RRAM devices 2.157
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 749
Advanced Data Encryption ​using 2D Materials 700
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 685
Unimore Resistive Random Access Memory (RRAM) Verilog-A Model 1.0.0 672
Memristive technologies for data storage, computation, encryption, and radio-frequency communication 512
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 475
Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride 448
Biologically Plausible Information Propagation in a CMOS Integrate-and-Fire Artificial Neuron Circuit with Memristive Synapses 408
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 397
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 388
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 372
A microscopic physical description of RTN current fluctuations in HfOx RRAM 372
Recommended Methods to Study Resistive Switching Devices 368
Random telegraph noise: Measurement, data analysis, and interpretation 367
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 365
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 357
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 352
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 347
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 343
Understanding current instabilities in conductive atomic force microscopy 333
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology 330
Temperature impact on the reset operation in HfO2 RRAM 329
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM 329
A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory 325
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 320
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 317
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 315
Progresses in Modeling HfOx RRAM Operations and Variability 312
Mixed-Mode Stress in Silicon-Germanium Heterostructure Bipolar Transistors: Insights from Experiments and Simulations 312
Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling 310
Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices 308
RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM 307
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 303
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 298
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 298
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 298
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 294
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 293
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 292
RTS Noise Characterization of HfOx RRAM in High Resistive State 291
Monitoring Stress-Induced Defects in HK/MG FinFETs Using Random Telegraph Noise 290
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 287
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 286
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 286
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules 285
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise 285
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 283
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS 282
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 282
An investigation on the role of current compliance in HfO2-based RRAM in HRS using RTN and I-V data 281
Circuit reliability of low-power rram-based logic-in-memory architectures 280
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 278
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 276
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization 275
Study of RRAM-Based Binarized Neural Networks Inference Accelerators Using an RRAM Physics-Based Compact Model 274
Low-Bit Precision Neural Network Architecture with High Immunity to Variability and Random Telegraph Noise based on Resistive Memories 273
Comprehensive physics-based RRAM compact model including the effect of variability and multi-level random telegraph noise 272
Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory 271
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence 270
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 269
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 269
Circuit Reliability Analysis of In-Memory Inference in Binarized Neural Networks 267
Multiscale modeling for application-oriented optimization of resistive random-access memory 266
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 266
Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study 265
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 264
Factorial Hidden Markov Model analysis of Random Telegraph Noise in Resistive Random Access Memories 261
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 261
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials 258
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices 256
Reconfigurable Smart In-Memory Computing Platform Supporting Logic and Binarized Neural Networks for Low-Power Edge Devices 256
Insights into the off-state breakdown mechanisms in power GaN HEMTs 252
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 252
Smart Logic-in-Memory Architecture for Low-Power non-von Neumann Computing 251
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 248
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 246
Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses 241
Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States 240
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators 237
Editorial: Brain-inspired computing: Neuroscience drives the development of new electronics and artificial intelligence 235
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 232
SIMPLY: Design of a RRAM-Based Smart Logic-in-Memory Architecture using RRAM Compact Model 229
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 224
Self-Heating Effect in Silicon-Germanium Heterostructure Bipolar Transistors in Stress and Operating Conditions 221
Electroforming in Metal-Oxide Memristive Synapses 220
Emergence of associative learning in a neuromorphic inference network 220
Random telegraph noise in 2D hexagonal boron nitride dielectric films 218
Optimized Synthesis Method for Ultra-Low Power Multi-Input Material Implication Logic With Emerging Non-Volatile Memories 217
Smart Logic-in-Memory Architecture For Ultra-Low Power Large Fan-In Operations 210
Random Telegraph Noise in Metal-Oxide Memristors for True Random Number Generators: A Materials Study 209
Energy-efficient non-von neumann computing architecture supporting multiple computing paradigms for logic and binarized neural networks 209
Measuring and analyzing Random Telegraph Noise in Nanoscale Devices: The case of resistive random access memories 206
Reliability of Logic-in-Memory Circuits in Resistive Memory Arrays 202
Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices 201
METODO DI LETTURA PER CIRCUITI DEL TIPO LOGIC-IN-MEMORY E RELATIVA ARCHITETTURA CIRCUITALE 200
Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model 194
Impedance Investigation of MIFM Ferroelectric Tunnel Junction using a Comprehensive Small-Signal Model 193
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks 192
Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions 192
Totale 32.013
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Categoria #
all - tutte 135.743
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 135.743
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.155 0 0 0 0 0 0 0 0 0 592 273 290
2021/20223.001 204 144 211 168 135 375 95 205 329 290 614 231
2022/20232.798 260 356 189 243 364 376 76 280 325 29 189 111
2023/20242.236 135 112 145 270 451 173 173 259 42 95 96 285
2024/20257.585 437 140 197 482 1.097 1.125 555 462 665 452 1.057 916
2025/202614.188 998 764 956 1.282 1.883 1.765 1.516 611 3.197 1.216 0 0
Totale 38.808