PUGLISI, Francesco Maria
 Distribuzione geografica
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Continente #
NA - Nord America 22.429
AS - Asia 10.971
EU - Europa 10.419
SA - Sud America 1.207
Continente sconosciuto - Info sul continente non disponibili 392
AF - Africa 182
OC - Oceania 17
Totale 45.617
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Nazione #
US - Stati Uniti d'America 21.803
SG - Singapore 3.207
CN - Cina 3.153
SE - Svezia 2.562
IT - Italia 2.398
GB - Regno Unito 1.591
HK - Hong Kong 1.323
BR - Brasile 917
DE - Germania 836
VN - Vietnam 789
PL - Polonia 691
KR - Corea 584
FR - Francia 501
BD - Bangladesh 453
FI - Finlandia 382
RU - Federazione Russa 354
JP - Giappone 349
CA - Canada 308
IN - India 237
TR - Turchia 186
UA - Ucraina 186
IE - Irlanda 158
NL - Olanda 145
ID - Indonesia 135
BG - Bulgaria 110
TW - Taiwan 109
ES - Italia 106
AR - Argentina 91
MX - Messico 88
PT - Portogallo 72
BE - Belgio 64
IQ - Iraq 63
AT - Austria 56
ZA - Sudafrica 52
AE - Emirati Arabi Uniti 50
EC - Ecuador 50
PK - Pakistan 48
IL - Israele 46
PH - Filippine 42
CH - Svizzera 40
CR - Costa Rica 38
CO - Colombia 36
LT - Lituania 36
VE - Venezuela 35
MA - Marocco 34
MY - Malesia 30
CL - Cile 24
GR - Grecia 24
HN - Honduras 23
JM - Giamaica 23
CW - ???statistics.table.value.countryCode.CW??? 22
SA - Arabia Saudita 22
GP - Guadalupe 20
NI - Nicaragua 20
PY - Paraguay 20
SV - El Salvador 20
UZ - Uzbekistan 20
DZ - Algeria 19
GT - Guatemala 19
JO - Giordania 19
PE - Perù 18
TH - Thailandia 18
TN - Tunisia 18
TT - Trinidad e Tobago 18
NP - Nepal 16
RO - Romania 16
PR - Porto Rico 15
CZ - Repubblica Ceca 14
AU - Australia 11
DO - Repubblica Dominicana 11
EE - Estonia 11
AZ - Azerbaigian 10
EG - Egitto 10
HU - Ungheria 10
IR - Iran 9
KE - Kenya 9
AL - Albania 8
DK - Danimarca 8
ET - Etiopia 8
UY - Uruguay 8
KZ - Kazakistan 7
RS - Serbia 7
BY - Bielorussia 6
EU - Europa 6
LU - Lussemburgo 6
NZ - Nuova Zelanda 6
SC - Seychelles 6
BS - Bahamas 5
LB - Libano 5
SK - Slovacchia (Repubblica Slovacca) 5
SN - Senegal 5
AO - Angola 4
BO - Bolivia 4
GE - Georgia 4
GY - Guiana 4
MD - Moldavia 4
MN - Mongolia 4
OM - Oman 4
PA - Panama 4
PS - Palestinian Territory 4
Totale 45.185
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Città #
Ashburn 2.698
Singapore 2.097
Fairfield 1.800
Stockholm 1.795
Santa Clara 1.739
San Jose 1.279
Hong Kong 1.272
Houston 1.074
Hefei 1.030
Woodbridge 928
Chandler 912
Southend 875
Council Bluffs 778
Seattle 753
Warsaw 683
Cambridge 587
Wilmington 585
Beijing 494
Chicago 469
London 422
Ann Arbor 421
Nyköping 418
Modena 379
Los Angeles 368
Seoul 361
Helsinki 309
Tokyo 296
Milan 285
The Dalles 284
Jacksonville 282
Ho Chi Minh City 257
Dearborn 252
New York 250
Hanoi 185
San Diego 180
Buffalo 176
Dallas 149
Bologna 140
Dublin 139
Boardman 137
Leesburg 133
São Paulo 123
Princeton 121
Izmir 113
Columbus 108
Bremen 105
Sofia 104
Grafing 103
Lauterbourg 102
Rome 100
Moscow 98
Frankfurt am Main 96
East Aurora 90
Shanghai 86
Redwood City 84
Jakarta 81
Eugene 76
Saint Augustine 75
Toronto 67
Salt Lake City 65
Orem 64
Atlanta 61
Reggio Emilia 61
Munich 60
Guangzhou 54
Phoenix 54
Falkenstein 50
Chennai 46
San Francisco 45
Taipei 45
Brooklyn 41
Wuhan 40
Amsterdam 39
Da Nang 39
North Bergen 39
Des Moines 38
Montreal 38
Kent 37
Denver 36
Mantova 35
Mexico City 35
Shenzhen 34
Washington 34
Delfgauw 33
Johannesburg 33
Charlotte 32
Hangzhou 32
Brussels 31
Dresden 30
Nuremberg 30
Palaiseau 30
Paris 30
Vienna 30
Dhaka 29
Parma 29
Zhengzhou 29
Haiphong 28
Oakland 28
Redondo Beach 28
North Charleston 27
Totale 31.002
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Nome #
2D h-BN based RRAM devices 2.240
Unimore Resistive Random Access Memory (RRAM) Verilog-A Model 1.0.0 856
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 808
Advanced Data Encryption ​using 2D Materials 759
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 747
Memristive technologies for data storage, computation, encryption, and radio-frequency communication 661
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 631
Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride 531
Biologically Plausible Information Propagation in a CMOS Integrate-and-Fire Artificial Neuron Circuit with Memristive Synapses 488
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 434
A microscopic physical description of RTN current fluctuations in HfOx RRAM 428
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 422
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 421
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 411
Random telegraph noise: Measurement, data analysis, and interpretation 411
Recommended Methods to Study Resistive Switching Devices 406
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 402
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 391
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 379
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization 376
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 375
A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory 369
Understanding current instabilities in conductive atomic force microscopy 367
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 366
Comprehensive physics-based RRAM compact model including the effect of variability and multi-level random telegraph noise 365
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology 362
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM 357
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 355
Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices 354
Mixed-Mode Stress in Silicon-Germanium Heterostructure Bipolar Transistors: Insights from Experiments and Simulations 354
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging 353
Temperature impact on the reset operation in HfO2 RRAM 351
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 349
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 347
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 343
RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM 342
Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling 342
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 341
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 341
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 340
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 338
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 337
Progresses in Modeling HfOx RRAM Operations and Variability 336
Monitoring Stress-Induced Defects in HK/MG FinFETs Using Random Telegraph Noise 335
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 335
Study of RRAM-Based Binarized Neural Networks Inference Accelerators Using an RRAM Physics-Based Compact Model 329
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules 328
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 328
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 328
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise 327
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 326
Low-Bit Precision Neural Network Architecture with High Immunity to Variability and Random Telegraph Noise based on Resistive Memories 326
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 324
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 323
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 322
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 321
RTS Noise Characterization of HfOx RRAM in High Resistive State 320
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS 320
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 317
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 316
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 315
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence 314
Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study 313
An investigation on the role of current compliance in HfO2-based RRAM in HRS using RTN and I-V data 312
Circuit reliability of low-power rram-based logic-in-memory architectures 310
Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory 309
Reconfigurable Smart In-Memory Computing Platform Supporting Logic and Binarized Neural Networks for Low-Power Edge Devices 308
Multiscale modeling for application-oriented optimization of resistive random-access memory 304
Circuit Reliability Analysis of In-Memory Inference in Binarized Neural Networks 297
Factorial Hidden Markov Model analysis of Random Telegraph Noise in Resistive Random Access Memories 296
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 292
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices 290
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials 289
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 288
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 284
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators 283
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks 281
Smart Logic-in-Memory Architecture for Low-Power non-von Neumann Computing 280
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 274
Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses 274
Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States 273
Smart Logic-in-Memory Architecture For Ultra-Low Power Large Fan-In Operations 272
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 271
METODO DI LETTURA PER CIRCUITI DEL TIPO LOGIC-IN-MEMORY E RELATIVA ARCHITETTURA CIRCUITALE 269
Insights into the off-state breakdown mechanisms in power GaN HEMTs 268
SIMPLY: Design of a RRAM-Based Smart Logic-in-Memory Architecture using RRAM Compact Model 264
Random Telegraph Noise in Metal-Oxide Memristors for True Random Number Generators: A Materials Study 257
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 254
Editorial: Brain-inspired computing: Neuroscience drives the development of new electronics and artificial intelligence 249
Electroforming in Metal-Oxide Memristive Synapses 249
Optimized Synthesis Method for Ultra-Low Power Multi-Input Material Implication Logic With Emerging Non-Volatile Memories 249
Random telegraph noise in 2D hexagonal boron nitride dielectric films 247
Measuring and analyzing Random Telegraph Noise in Nanoscale Devices: The case of resistive random access memories 246
Emergence of associative learning in a neuromorphic inference network 244
Impedance Investigation of MIFM Ferroelectric Tunnel Junction using a Comprehensive Small-Signal Model 243
Reliability of Logic-in-Memory Circuits in Resistive Memory Arrays 243
Self-Heating Effect in Silicon-Germanium Heterostructure Bipolar Transistors in Stress and Operating Conditions 242
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs 240
The Impact of Electrostatic Interactions between Defects on the Characteristics of Random Telegraph Noise 240
Energy-efficient non-von neumann computing architecture supporting multiple computing paradigms for logic and binarized neural networks 236
Totale 36.780
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Categoria #
all - tutte 161.504
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 161.504
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.274 0 0 0 0 135 375 95 205 329 290 614 231
2022/20232.798 260 356 189 243 364 376 76 280 325 29 189 111
2023/20242.236 135 112 145 270 451 173 173 259 42 95 96 285
2024/20257.585 437 140 197 482 1.097 1.125 555 462 665 452 1.057 916
2025/202615.915 998 764 956 1.282 1.883 1.765 1.516 611 3.197 1.235 986 722
2026/20275.082 643 1.183 1.061 1.808 387 0 0 0 0 0 0 0
Totale 45.617