PUGLISI, Francesco Maria
 Distribuzione geografica
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Continente #
NA - Nord America 18.584
AS - Asia 10.787
EU - Europa 10.139
SA - Sud America 1.164
Continente sconosciuto - Info sul continente non disponibili 368
AF - Africa 176
OC - Oceania 15
Totale 41.233
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Nazione #
US - Stati Uniti d'America 18.244
SG - Singapore 3.181
CN - Cina 3.113
SE - Svezia 2.557
IT - Italia 2.279
GB - Regno Unito 1.556
HK - Hong Kong 1.312
BR - Brasile 894
DE - Germania 809
VN - Vietnam 786
PL - Polonia 689
KR - Corea 578
FR - Francia 476
BD - Bangladesh 434
FI - Finlandia 381
JP - Giappone 335
RU - Federazione Russa 328
IN - India 222
CA - Canada 196
TR - Turchia 185
UA - Ucraina 182
IE - Irlanda 157
NL - Olanda 141
ID - Indonesia 126
BG - Bulgaria 109
TW - Taiwan 102
ES - Italia 94
AR - Argentina 88
MX - Messico 85
PT - Portogallo 72
IQ - Iraq 63
BE - Belgio 61
AT - Austria 56
ZA - Sudafrica 52
AE - Emirati Arabi Uniti 48
PK - Pakistan 46
EC - Ecuador 45
PH - Filippine 40
CH - Svizzera 39
MA - Marocco 34
LT - Lituania 32
VE - Venezuela 31
CO - Colombia 29
IL - Israele 29
MY - Malesia 25
CL - Cile 24
GR - Grecia 24
SA - Arabia Saudita 21
PY - Paraguay 20
JO - Giordania 19
UZ - Uzbekistan 19
DZ - Algeria 18
PE - Perù 18
TN - Tunisia 18
TH - Thailandia 17
NP - Nepal 16
CZ - Repubblica Ceca 14
RO - Romania 14
JM - Giamaica 12
DO - Repubblica Dominicana 11
AU - Australia 10
AZ - Azerbaigian 10
EG - Egitto 10
HU - Ungheria 10
IR - Iran 9
KE - Kenya 9
AL - Albania 8
ET - Etiopia 8
UY - Uruguay 8
CR - Costa Rica 7
DK - Danimarca 7
RS - Serbia 7
EU - Europa 6
KZ - Kazakistan 6
LU - Lussemburgo 6
BY - Bielorussia 5
EE - Estonia 5
GT - Guatemala 5
HN - Honduras 5
LB - Libano 5
NZ - Nuova Zelanda 5
SK - Slovacchia (Repubblica Slovacca) 5
SN - Senegal 5
AO - Angola 4
BO - Bolivia 4
GE - Georgia 4
MD - Moldavia 4
MN - Mongolia 4
NI - Nicaragua 4
OM - Oman 4
PA - Panama 4
PS - Palestinian Territory 4
TT - Trinidad e Tobago 4
AM - Armenia 3
BN - Brunei Darussalam 3
CG - Congo 3
GY - Guiana 3
KH - Cambogia 3
KW - Kuwait 3
A2 - ???statistics.table.value.countryCode.A2??? 2
Totale 40.827
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Città #
Singapore 2.086
Ashburn 1.972
Fairfield 1.800
Stockholm 1.795
Santa Clara 1.665
Hong Kong 1.264
Houston 1.065
Hefei 1.030
San Jose 966
Woodbridge 926
Chandler 912
Southend 875
Seattle 707
Warsaw 682
Wilmington 584
Cambridge 581
Beijing 488
Chicago 441
Ann Arbor 421
Nyköping 418
London 417
Modena 379
Seoul 361
Los Angeles 316
Helsinki 309
Council Bluffs 299
Tokyo 285
Jacksonville 274
Milan 269
Ho Chi Minh City 256
Dearborn 251
The Dalles 249
New York 224
Hanoi 183
San Diego 179
Buffalo 168
Dublin 137
Boardman 135
Bologna 135
Leesburg 133
Dallas 131
São Paulo 116
Izmir 113
Princeton 109
Bremen 104
Sofia 104
Grafing 103
Lauterbourg 102
Moscow 98
Frankfurt am Main 93
Rome 92
East Aurora 90
Shanghai 86
Redwood City 84
Jakarta 81
Eugene 76
Columbus 69
Orem 61
Reggio Emilia 61
Salt Lake City 60
Munich 58
Guangzhou 54
Falkenstein 50
Chennai 46
Toronto 45
Taipei 44
San Francisco 41
Wuhan 40
Amsterdam 39
Da Nang 39
Atlanta 38
Kent 37
Mantova 35
Mexico City 35
Brooklyn 34
Shenzhen 34
Delfgauw 33
Johannesburg 33
Hangzhou 31
Phoenix 31
Nuremberg 30
Palaiseau 30
Paris 30
Vienna 30
Brussels 29
Des Moines 29
Zhengzhou 29
Haiphong 28
Parma 28
Dhaka 27
Dresden 27
Redondo Beach 27
Montreal 26
Poplar 26
Rio de Janeiro 26
Baghdad 25
Draper 25
Charlotte 24
Tampa 24
Aachen 23
Totale 28.810
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Nome #
2D h-BN based RRAM devices 2.182
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 763
Unimore Resistive Random Access Memory (RRAM) Verilog-A Model 1.0.0 741
Advanced Data Encryption ​using 2D Materials 716
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 701
Memristive technologies for data storage, computation, encryption, and radio-frequency communication 571
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 539
Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride 474
Biologically Plausible Information Propagation in a CMOS Integrate-and-Fire Artificial Neuron Circuit with Memristive Synapses 463
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 408
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 403
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 397
A microscopic physical description of RTN current fluctuations in HfOx RRAM 393
Random telegraph noise: Measurement, data analysis, and interpretation 387
Recommended Methods to Study Resistive Switching Devices 382
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 375
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 370
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 368
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 359
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 355
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization 355
A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory 347
Understanding current instabilities in conductive atomic force microscopy 346
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology 342
Temperature impact on the reset operation in HfO2 RRAM 337
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM 336
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 329
Mixed-Mode Stress in Silicon-Germanium Heterostructure Bipolar Transistors: Insights from Experiments and Simulations 329
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 329
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 327
Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices 323
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 323
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 322
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 320
Progresses in Modeling HfOx RRAM Operations and Variability 320
Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling 319
Monitoring Stress-Induced Defects in HK/MG FinFETs Using Random Telegraph Noise 317
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 316
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 312
RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM 311
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 309
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 309
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 308
Comprehensive physics-based RRAM compact model including the effect of variability and multi-level random telegraph noise 307
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 307
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 307
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 303
Study of RRAM-Based Binarized Neural Networks Inference Accelerators Using an RRAM Physics-Based Compact Model 301
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise 299
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules 297
RTS Noise Characterization of HfOx RRAM in High Resistive State 297
An investigation on the role of current compliance in HfO2-based RRAM in HRS using RTN and I-V data 296
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 295
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 292
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 292
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 291
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 290
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 290
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 290
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS 289
Circuit reliability of low-power rram-based logic-in-memory architectures 289
Low-Bit Precision Neural Network Architecture with High Immunity to Variability and Random Telegraph Noise based on Resistive Memories 289
Reconfigurable Smart In-Memory Computing Platform Supporting Logic and Binarized Neural Networks for Low-Power Edge Devices 287
Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study 286
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence 285
Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory 283
Factorial Hidden Markov Model analysis of Random Telegraph Noise in Resistive Random Access Memories 279
Multiscale modeling for application-oriented optimization of resistive random-access memory 278
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 272
Circuit Reliability Analysis of In-Memory Inference in Binarized Neural Networks 271
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 269
Smart Logic-in-Memory Architecture for Low-Power non-von Neumann Computing 269
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials 268
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices 263
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 258
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators 256
Insights into the off-state breakdown mechanisms in power GaN HEMTs 256
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 252
Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses 249
Smart Logic-in-Memory Architecture For Ultra-Low Power Large Fan-In Operations 247
Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States 246
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 245
Editorial: Brain-inspired computing: Neuroscience drives the development of new electronics and artificial intelligence 242
SIMPLY: Design of a RRAM-Based Smart Logic-in-Memory Architecture using RRAM Compact Model 238
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks 236
Emergence of associative learning in a neuromorphic inference network 231
Random telegraph noise in 2D hexagonal boron nitride dielectric films 230
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 229
Self-Heating Effect in Silicon-Germanium Heterostructure Bipolar Transistors in Stress and Operating Conditions 227
Impedance Investigation of MIFM Ferroelectric Tunnel Junction using a Comprehensive Small-Signal Model 226
Electroforming in Metal-Oxide Memristive Synapses 224
Optimized Synthesis Method for Ultra-Low Power Multi-Input Material Implication Logic With Emerging Non-Volatile Memories 221
Reliability of Logic-in-Memory Circuits in Resistive Memory Arrays 219
Random Telegraph Noise in Metal-Oxide Memristors for True Random Number Generators: A Materials Study 219
METODO DI LETTURA PER CIRCUITI DEL TIPO LOGIC-IN-MEMORY E RELATIVA ARCHITETTURA CIRCUITALE 218
Energy-efficient non-von neumann computing architecture supporting multiple computing paradigms for logic and binarized neural networks 217
Measuring and analyzing Random Telegraph Noise in Nanoscale Devices: The case of resistive random access memories 215
Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices 212
Information Transfer in Neuronal Circuits: From Biological Neurons to Neuromorphic Electronics 201
Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions 200
Totale 33.778
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Categoria #
all - tutte 147.181
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 147.181
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.797 0 144 211 168 135 375 95 205 329 290 614 231
2022/20232.798 260 356 189 243 364 376 76 280 325 29 189 111
2023/20242.236 135 112 145 270 451 173 173 259 42 95 96 285
2024/20257.585 437 140 197 482 1.097 1.125 555 462 665 452 1.057 916
2025/202615.915 998 764 956 1.282 1.883 1.765 1.516 611 3.197 1.235 986 722
2026/2027698 643 55 0 0 0 0 0 0 0 0 0 0
Totale 41.233