SOCI, FABIO
 Distribuzione geografica
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Continente #
NA - Nord America 2.024
AS - Asia 941
EU - Europa 669
SA - Sud America 131
AF - Africa 14
OC - Oceania 2
Continente sconosciuto - Info sul continente non disponibili 1
Totale 3.782
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Nazione #
US - Stati Uniti d'America 2.008
SG - Singapore 286
CN - Cina 246
GB - Regno Unito 215
VN - Vietnam 132
HK - Hong Kong 123
BR - Brasile 106
SE - Svezia 87
RU - Federazione Russa 76
IT - Italia 65
DE - Germania 52
UA - Ucraina 44
FI - Finlandia 40
FR - Francia 40
IN - India 35
TR - Turchia 28
BG - Bulgaria 17
KR - Corea 15
TW - Taiwan 12
IQ - Iraq 10
AR - Argentina 9
JP - Giappone 9
NL - Olanda 9
BD - Bangladesh 6
ID - Indonesia 6
ZA - Sudafrica 6
CA - Canada 5
EC - Ecuador 5
MX - Messico 5
AE - Emirati Arabi Uniti 4
CO - Colombia 4
PK - Pakistan 4
PL - Polonia 4
VE - Venezuela 4
PA - Panama 3
UZ - Uzbekistan 3
AT - Austria 2
AU - Australia 2
CH - Svizzera 2
CL - Cile 2
DK - Danimarca 2
DZ - Algeria 2
ES - Italia 2
IR - Iran 2
KZ - Kazakistan 2
LT - Lituania 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
AM - Armenia 1
AZ - Azerbaigian 1
BH - Bahrain 1
BY - Bielorussia 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
EG - Egitto 1
EU - Europa 1
GA - Gabon 1
GE - Georgia 1
GR - Grecia 1
HN - Honduras 1
HR - Croazia 1
HU - Ungheria 1
IL - Israele 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
KN - Saint Kitts e Nevis 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
MA - Marocco 1
MU - Mauritius 1
MY - Malesia 1
NG - Nigeria 1
NP - Nepal 1
OM - Oman 1
PE - Perù 1
QA - Qatar 1
RS - Serbia 1
SA - Arabia Saudita 1
SN - Senegal 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TM - Turkmenistan 1
Totale 3.782
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Città #
Fairfield 207
Santa Clara 196
Ashburn 176
Singapore 169
Woodbridge 163
Chandler 152
Southend 149
Hong Kong 120
Houston 110
Seattle 94
Dearborn 85
Wilmington 75
Cambridge 70
Jacksonville 70
Ann Arbor 64
San Jose 60
Beijing 59
Nyköping 47
London 37
Ho Chi Minh City 34
Hanoi 30
Helsinki 25
Hefei 23
Modena 22
The Dalles 20
Council Bluffs 19
Los Angeles 17
Eugene 16
Kent 16
Princeton 16
Shanghai 16
Sofia 16
New York 15
Bengaluru 14
San Diego 14
Boardman 13
Buffalo 11
Izmir 11
Lauterbourg 11
Milan 11
Seoul 11
Da Nang 9
Redwood City 9
Moscow 8
Novosibirsk 8
Haiphong 7
Belo Horizonte 6
Brooklyn 6
Dallas 6
Frankfurt am Main 6
Norwalk 6
Munich 5
Nanjing 5
Paris 5
Salt Lake City 5
São Paulo 5
Tokyo 5
Tulare 5
Wallingford 5
Baghdad 4
Brasília 4
Changsha 4
Chennai 4
Chicago 4
Denver 4
Hải Dương 4
Jakarta 4
Orem 4
Rio de Janeiro 4
Taipei 4
Berlin 3
Biên Hòa 3
Bristol 3
Guangzhou 3
Indiana 3
Johannesburg 3
Nanchang 3
Porto Alegre 3
Roermond 3
Rome 3
Roubaix 3
St Petersburg 3
Stockholm 3
Tampa 3
Araruama 2
Boston 2
Can Tho 2
Caracas 2
Chengdu 2
Dalian 2
Delhi 2
Fortaleza 2
Fuzhou 2
Guarulhos 2
Hai Bà Trưng 2
Hsinchu 2
Karachi 2
Kilburn 2
Kish 2
Kunming 2
Totale 2.713
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Nome #
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 313
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design 288
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT 280
Field plate related reliability improvements in GaN-on-Si HEMTs 274
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 274
Traps localization and analysis in GaN HEMTs 271
Influence of device self-heating on trap activation energy extraction 266
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 263
PARASITIC EFFECTS OF BUFFER DESIGN ON STATIC AND DYNAMIC PARAMETERS OF ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS 230
Deep levels characterization in GaN HEMTs - Part II: Experimental and numerical evaluation of self-heating effects on the extraction of traps activation energy 227
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 220
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 204
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 196
Threshold voltage shift investigation and oxide trap profile extraction in AlGaN/GaN MIS-HEMTs 183
Effect of Gate Field-Plate Geometry on On-Resistance in AlGan/GaN HEMTs for Power Applications 177
Experimental Technique for Traps Spatial Localization in GaN HEMTs 175
Totale 3.841
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Categoria #
all - tutte 13.087
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.087
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202137 0 0 0 0 0 0 0 0 0 0 21 16
2021/2022288 13 22 45 6 1 13 23 15 22 19 75 34
2022/2023327 24 40 22 36 26 55 2 37 59 5 13 8
2023/2024216 6 14 16 24 50 7 5 60 5 3 3 23
2024/2025674 29 13 18 49 137 88 36 70 71 11 63 89
2025/2026966 48 43 82 56 211 63 167 57 128 97 14 0
Totale 3.841