SOCI, FABIO
 Distribuzione geografica
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Continente #
NA - Nord America 2.459
AS - Asia 959
EU - Europa 714
SA - Sud America 133
Continente sconosciuto - Info sul continente non disponibili 60
AF - Africa 17
OC - Oceania 2
Totale 4.344
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Nazione #
US - Stati Uniti d'America 2.415
SG - Singapore 294
CN - Cina 249
GB - Regno Unito 218
VN - Vietnam 132
HK - Hong Kong 126
BR - Brasile 107
IT - Italia 99
SE - Svezia 88
RU - Federazione Russa 81
DE - Germania 53
UA - Ucraina 45
FI - Finlandia 40
FR - Francia 40
IN - India 35
TR - Turchia 28
BG - Bulgaria 17
CA - Canada 17
KR - Corea 15
JP - Giappone 12
TW - Taiwan 12
IQ - Iraq 10
AR - Argentina 9
NL - Olanda 9
BD - Bangladesh 7
MX - Messico 7
ID - Indonesia 6
ZA - Sudafrica 6
EC - Ecuador 5
VE - Venezuela 5
AE - Emirati Arabi Uniti 4
CO - Colombia 4
PA - Panama 4
PK - Pakistan 4
PL - Polonia 4
PR - Porto Rico 4
SC - Seychelles 3
UZ - Uzbekistan 3
AT - Austria 2
AU - Australia 2
CH - Svizzera 2
CL - Cile 2
CR - Costa Rica 2
DK - Danimarca 2
DZ - Algeria 2
ES - Italia 2
GT - Guatemala 2
HN - Honduras 2
IR - Iran 2
KZ - Kazakistan 2
LT - Lituania 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
AM - Armenia 1
AZ - Azerbaigian 1
BH - Bahrain 1
BY - Bielorussia 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
EG - Egitto 1
EU - Europa 1
GA - Gabon 1
GE - Georgia 1
GR - Grecia 1
HR - Croazia 1
HT - Haiti 1
HU - Ungheria 1
IL - Israele 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
KN - Saint Kitts e Nevis 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
MA - Marocco 1
MU - Mauritius 1
MY - Malesia 1
NG - Nigeria 1
NI - Nicaragua 1
NP - Nepal 1
OM - Oman 1
PE - Perù 1
QA - Qatar 1
RS - Serbia 1
SA - Arabia Saudita 1
SN - Senegal 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TM - Turkmenistan 1
TT - Trinidad e Tobago 1
Totale 4.285
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Città #
Ashburn 323
Fairfield 207
Santa Clara 207
Singapore 174
Woodbridge 163
Chandler 152
Southend 149
Hong Kong 123
Houston 111
San Jose 107
Seattle 95
Dearborn 85
Wilmington 76
Jacksonville 71
Cambridge 70
Council Bluffs 70
Ann Arbor 64
Beijing 59
Nyköping 47
London 37
Ho Chi Minh City 34
Hanoi 30
Helsinki 25
Los Angeles 24
Modena 24
Hefei 23
Milan 22
Princeton 20
The Dalles 20
New York 17
Shanghai 17
Eugene 16
Kent 16
Sofia 16
Bengaluru 14
San Diego 14
Boardman 13
Buffalo 12
Izmir 11
Lauterbourg 11
Seoul 11
Da Nang 9
Dallas 9
Framingham 9
Redwood City 9
Moscow 8
Novosibirsk 8
Brooklyn 7
Frankfurt am Main 7
Haiphong 7
Belo Horizonte 6
Columbus 6
Norwalk 6
Saint Augustine 6
Tokyo 6
Chicago 5
Munich 5
Nanjing 5
Paris 5
Rome 5
Salt Lake City 5
São Paulo 5
Tulare 5
Wallingford 5
Baghdad 4
Brasília 4
Changsha 4
Chennai 4
Concord 4
Denver 4
Hải Dương 4
Jakarta 4
Orem 4
Rio de Janeiro 4
Taipei 4
Berlin 3
Biên Hòa 3
Boston 3
Bristol 3
Guangzhou 3
Indiana 3
Johannesburg 3
Nanchang 3
North Bergen 3
Oklahoma City 3
Panama City 3
Philadelphia 3
Porto Alegre 3
Roermond 3
Roubaix 3
St Petersburg 3
Stockholm 3
Tampa 3
Toronto 3
Turin 3
Araruama 2
Bologna 2
Calgary 2
Can Tho 2
Caracas 2
Totale 3.042
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Nome #
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 347
Traps localization and analysis in GaN HEMTs 321
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design 315
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 307
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT 306
Field plate related reliability improvements in GaN-on-Si HEMTs 298
Influence of device self-heating on trap activation energy extraction 292
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 289
PARASITIC EFFECTS OF BUFFER DESIGN ON STATIC AND DYNAMIC PARAMETERS OF ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS 267
Deep levels characterization in GaN HEMTs - Part II: Experimental and numerical evaluation of self-heating effects on the extraction of traps activation energy 267
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 250
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 248
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 227
Threshold voltage shift investigation and oxide trap profile extraction in AlGaN/GaN MIS-HEMTs 223
Effect of Gate Field-Plate Geometry on On-Resistance in AlGan/GaN HEMTs for Power Applications 195
Experimental Technique for Traps Spatial Localization in GaN HEMTs 192
Totale 4.344
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Categoria #
all - tutte 15.373
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 15.373
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022202 0 0 0 0 1 13 23 15 22 19 75 34
2022/2023327 24 40 22 36 26 55 2 37 59 5 13 8
2023/2024216 6 14 16 24 50 7 5 60 5 3 3 23
2024/2025674 29 13 18 49 137 88 36 70 71 11 63 89
2025/20261.040 48 43 82 56 211 63 167 57 128 97 40 48
2026/2027429 37 83 145 119 45 0 0 0 0 0 0 0
Totale 4.344