PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 29.006
AS - Asia 14.264
EU - Europa 9.274
SA - Sud America 1.797
AF - Africa 234
OC - Oceania 20
Continente sconosciuto - Info sul continente non disponibili 18
Totale 54.613
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Nazione #
US - Stati Uniti d'America 28.712
SG - Singapore 4.176
CN - Cina 4.109
GB - Regno Unito 2.966
HK - Hong Kong 2.364
BR - Brasile 1.440
VN - Vietnam 1.412
IT - Italia 1.032
DE - Germania 890
PL - Polonia 754
KR - Corea 672
UA - Ucraina 671
SE - Svezia 648
RU - Federazione Russa 540
FR - Francia 436
TR - Turchia 422
IE - Irlanda 302
BG - Bulgaria 245
IN - India 245
FI - Finlandia 227
NL - Olanda 169
CA - Canada 148
BD - Bangladesh 141
AR - Argentina 126
ID - Indonesia 106
JP - Giappone 102
IQ - Iraq 98
MX - Messico 93
LT - Lituania 71
EC - Ecuador 61
PK - Pakistan 59
ES - Italia 58
ZA - Sudafrica 58
AT - Austria 55
AE - Emirati Arabi Uniti 45
TW - Taiwan 41
CO - Colombia 38
VE - Venezuela 36
PH - Filippine 34
MA - Marocco 33
BE - Belgio 32
CL - Cile 32
CH - Svizzera 31
TN - Tunisia 27
EG - Egitto 26
UZ - Uzbekistan 26
PY - Paraguay 25
DZ - Algeria 24
MY - Malesia 24
JO - Giordania 23
NP - Nepal 22
PT - Portogallo 21
RO - Romania 21
SA - Arabia Saudita 21
TH - Thailandia 20
GR - Grecia 19
AU - Australia 17
CZ - Repubblica Ceca 16
KE - Kenya 15
PE - Perù 15
JM - Giamaica 13
OM - Oman 13
UY - Uruguay 13
IR - Iran 10
AZ - Azerbaigian 9
BO - Bolivia 9
HR - Croazia 9
RS - Serbia 9
A2 - ???statistics.table.value.countryCode.A2??? 8
AM - Armenia 8
CR - Costa Rica 8
IL - Israele 8
SN - Senegal 8
AL - Albania 7
ET - Etiopia 7
KZ - Kazakistan 7
NO - Norvegia 7
SK - Slovacchia (Repubblica Slovacca) 7
EU - Europa 6
LB - Libano 6
AO - Angola 5
BH - Bahrain 5
CI - Costa d'Avorio 5
DK - Danimarca 5
DO - Repubblica Dominicana 5
MK - Macedonia 5
PS - Palestinian Territory 5
QA - Qatar 5
HN - Honduras 4
KH - Cambogia 4
NG - Nigeria 4
PA - Panama 4
TT - Trinidad e Tobago 4
XK - ???statistics.table.value.countryCode.XK??? 4
BA - Bosnia-Erzegovina 3
BB - Barbados 3
CY - Cipro 3
GH - Ghana 3
GT - Guatemala 3
KG - Kirghizistan 3
Totale 54.546
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Città #
Fairfield 3.706
Santa Clara 2.826
Singapore 2.753
Ashburn 2.744
Hong Kong 2.323
Southend 1.862
Hefei 1.769
Woodbridge 1.634
Seattle 1.445
Houston 1.429
Chandler 1.194
Cambridge 1.178
Dearborn 1.144
Wilmington 1.141
San Jose 1.017
Jacksonville 992
London 807
Warsaw 745
Seoul 648
Beijing 528
Ann Arbor 497
Chicago 434
Ho Chi Minh City 434
The Dalles 425
Los Angeles 406
Izmir 368
Hanoi 362
Dublin 293
Nyköping 293
Council Bluffs 280
San Diego 278
Lauterbourg 270
Princeton 241
Sofia 240
Eugene 226
New York 225
Helsinki 202
Moscow 172
Salt Lake City 164
Buffalo 153
Washington 138
Modena 137
Milan 124
São Paulo 124
Shanghai 123
Dallas 118
Amsterdam 112
Redondo Beach 99
Kent 97
Frankfurt am Main 95
Atlanta 86
Bremen 80
Da Nang 76
Tampa 76
Bologna 69
Tokyo 69
Falls Church 67
Orem 67
Nanjing 62
Jakarta 61
Elk Grove Village 58
Guangzhou 56
Rio de Janeiro 56
San Francisco 48
Norwalk 46
Haiphong 45
Phoenix 43
Brantford 38
Brooklyn 36
Miami 36
Baghdad 35
Chennai 35
Kilburn 35
Kunming 33
Denver 32
Belo Horizonte 31
Boardman 31
Toronto 31
Reggio Emilia 29
Changsha 27
Mexico City 27
Udine 27
Jinan 26
Munich 26
Columbus 25
Nuremberg 25
Paris 25
Taipei 25
Montreal 24
Quito 24
Tashkent 24
Biên Hòa 23
Curitiba 23
Dhaka 23
Boston 22
Campinas 22
Detroit 22
Las Vegas 22
Vienna 22
Brasília 21
Totale 40.987
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 582
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 465
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 407
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 341
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 317
Impact Ionization and Photon Emission in MOS Capacitors and FETs 301
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 294
A design methodology for MOS Current-Mode Logic Frequency Dividers 291
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 281
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 281
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 279
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 277
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 273
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 265
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 265
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 264
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 264
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 261
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 258
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 258
Relationship between capacitance and conductance in MOS capacitors 256
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 255
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 255
Device simulation for decananometer MOSFETs 254
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 253
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 253
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 252
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 252
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 242
A better understanding of the low-field mobility in Graphene Nano-ribbons 241
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 241
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 241
Impact of carrier heating on backscattering in inversion layers 239
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 235
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 234
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 231
Tunneling path impact on semi-classical numerical simulations of TFET devices 228
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 228
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 227
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 227
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 226
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 225
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 223
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 223
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 223
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 222
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 221
Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET 221
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 221
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 220
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 220
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 219
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 217
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices 216
On the experimental determination of channel back-scattering in nanoMOSFETs 216
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 216
General model for multiple surface reactions in ion-sensitive FETs 216
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 215
Tunnelling Injection in Thin Oxide MOS Capacitors 214
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 214
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 214
Simulation of DC and RF Performance of the Graphene Base Transistor 213
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 212
Graphene Base Transistors with optimized emitter and dielectrics 212
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 212
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 211
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms 210
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 210
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 207
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 207
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 206
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach 206
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers 206
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 205
Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors ? 205
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 204
Nanoscale MOS Transistors: Semi-Classical Transport and Applications 204
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 204
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 204
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 204
Ultra-High Frequency (500 MHz) Capacitance Spectroscopy for Nanobiosensing 204
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 203
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 203
On the Apparent Mobility in Nanometric n-MOSFETs 202
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 202
LC-Oscillator featuring independent Gate biasing implemented in 32 nm CMOS technology 202
Enhanced Ballisticity in nano-MOSFETs along the ITRS Roadmap: A Monte Carlo Study 202
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 202
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs 201
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 201
Modeling electrostatic doping and series resistance in graphene-FETs 201
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 201
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 201
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 201
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 201
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs 200
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 199
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS 199
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 198
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 198
Totale 23.633
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Categoria #
all - tutte 236.652
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 236.652
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021639 0 0 0 0 0 0 0 0 0 0 310 329
2021/20223.943 201 562 474 107 84 204 226 200 467 337 725 356
2022/20233.036 367 262 169 216 463 458 38 313 450 47 131 122
2023/20243.193 128 188 129 315 772 527 308 297 56 53 185 235
2024/202510.541 359 101 94 714 1.992 1.493 252 479 1.169 751 1.393 1.744
2025/202617.069 1.080 847 1.864 1.593 2.196 2.480 2.858 770 1.389 1.537 455 0
Totale 55.111