PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 31.246
AS - Asia 14.801
EU - Europa 9.744
SA - Sud America 1.814
Continente sconosciuto - Info sul continente non disponibili 520
AF - Africa 241
OC - Oceania 20
Totale 58.386
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Nazione #
US - Stati Uniti d'America 30.855
SG - Singapore 4.227
CN - Cina 4.153
GB - Regno Unito 2.972
HK - Hong Kong 2.369
BR - Brasile 1.453
IT - Italia 1.452
VN - Vietnam 1.412
DE - Germania 892
PL - Polonia 757
KR - Corea 682
UA - Ucraina 672
SE - Svezia 648
BD - Bangladesh 543
RU - Federazione Russa 540
FR - Francia 448
TR - Turchia 422
IE - Irlanda 302
IN - India 256
BG - Bulgaria 246
FI - Finlandia 227
CA - Canada 206
NL - Olanda 177
AR - Argentina 126
ID - Indonesia 108
JP - Giappone 106
IQ - Iraq 98
MX - Messico 98
LT - Lituania 71
EC - Ecuador 61
PK - Pakistan 59
ES - Italia 58
ZA - Sudafrica 58
AT - Austria 57
AE - Emirati Arabi Uniti 45
TW - Taiwan 43
CO - Colombia 41
BE - Belgio 39
VE - Venezuela 37
PH - Filippine 34
CH - Svizzera 33
MA - Marocco 33
CL - Cile 32
EG - Egitto 31
MY - Malesia 27
TN - Tunisia 27
UZ - Uzbekistan 26
DZ - Algeria 25
PY - Paraguay 25
NP - Nepal 24
JO - Giordania 23
PT - Portogallo 22
RO - Romania 22
SA - Arabia Saudita 21
TH - Thailandia 21
GR - Grecia 19
JM - Giamaica 18
AU - Australia 17
CZ - Repubblica Ceca 16
HN - Honduras 16
KE - Kenya 15
PE - Perù 15
OM - Oman 13
UY - Uruguay 13
CR - Costa Rica 12
IR - Iran 10
RS - Serbia 10
AZ - Azerbaigian 9
BO - Bolivia 9
HR - Croazia 9
A2 - ???statistics.table.value.countryCode.A2??? 8
AM - Armenia 8
IL - Israele 8
SK - Slovacchia (Repubblica Slovacca) 8
SN - Senegal 8
AL - Albania 7
ET - Etiopia 7
KZ - Kazakistan 7
NO - Norvegia 7
BB - Barbados 6
DK - Danimarca 6
EU - Europa 6
LB - Libano 6
TT - Trinidad e Tobago 6
AO - Angola 5
BH - Bahrain 5
CI - Costa d'Avorio 5
DO - Repubblica Dominicana 5
MK - Macedonia 5
PS - Palestinian Territory 5
QA - Qatar 5
GT - Guatemala 4
KH - Cambogia 4
NG - Nigeria 4
NI - Nicaragua 4
PA - Panama 4
PR - Porto Rico 4
XK - ???statistics.table.value.countryCode.XK??? 4
BA - Bosnia-Erzegovina 3
CY - Cipro 3
Totale 57.810
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Città #
Fairfield 3.706
Ashburn 3.266
Santa Clara 2.898
Singapore 2.780
Hong Kong 2.328
Southend 1.862
Hefei 1.770
San Jose 1.680
Woodbridge 1.634
Seattle 1.447
Houston 1.431
Chandler 1.194
Cambridge 1.178
Dearborn 1.144
Wilmington 1.141
Jacksonville 1.000
London 808
Warsaw 745
Seoul 651
Beijing 532
Ann Arbor 497
Council Bluffs 462
Los Angeles 453
Chicago 441
Ho Chi Minh City 434
The Dalles 425
Izmir 368
Hanoi 362
Dublin 293
Nyköping 293
San Diego 278
Lauterbourg 270
New York 266
Milan 256
Princeton 241
Sofia 240
Eugene 226
Helsinki 202
Moscow 172
Buffalo 170
Salt Lake City 165
Dallas 144
Washington 140
Modena 138
São Paulo 129
Shanghai 126
Amsterdam 115
Redondo Beach 99
Kent 97
Frankfurt am Main 96
Boardman 94
Atlanta 89
Bremen 80
Da Nang 76
Tampa 76
Bologna 73
Tokyo 71
Orem 69
Falls Church 67
Nanjing 62
Jakarta 61
Elk Grove Village 58
Guangzhou 57
Rio de Janeiro 56
Miano 54
San Francisco 49
Phoenix 48
Toronto 48
Norwalk 46
Haiphong 45
Brooklyn 40
Brantford 39
Miami 38
Chennai 36
Baghdad 35
Kilburn 35
Denver 33
Kunming 33
Mexico City 32
Rome 32
Belo Horizonte 31
Montreal 31
Reggio Emilia 31
Changsha 28
Udine 27
Columbus 26
Jinan 26
Munich 26
Paris 26
Nuremberg 25
Taipei 25
Boston 24
Charlotte 24
Des Moines 24
Philadelphia 24
Quito 24
Tashkent 24
Biên Hòa 23
Curitiba 23
Detroit 23
Totale 42.940
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 620
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 480
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 425
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 357
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 325
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 318
Impact Ionization and Photon Emission in MOS Capacitors and FETs 305
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 305
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 303
A design methodology for MOS Current-Mode Logic Frequency Dividers 300
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 290
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 290
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 286
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 280
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 277
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 274
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 272
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 272
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 271
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 269
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 269
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 268
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 268
Simulation of DC and RF Performance of the Graphene Base Transistor 267
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 264
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 264
Device simulation for decananometer MOSFETs 264
Relationship between capacitance and conductance in MOS capacitors 263
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 261
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 261
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 260
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 255
Impact of carrier heating on backscattering in inversion layers 248
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 247
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 246
A better understanding of the low-field mobility in Graphene Nano-ribbons 246
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 245
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 243
Tunneling path impact on semi-classical numerical simulations of TFET devices 242
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 241
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 238
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 237
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 235
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 235
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 234
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 234
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 233
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 233
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 233
Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET 232
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 231
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 230
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 230
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 229
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 228
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 228
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 224
On the experimental determination of channel back-scattering in nanoMOSFETs 223
Tunnelling Injection in Thin Oxide MOS Capacitors 223
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 223
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 223
General model for multiple surface reactions in ion-sensitive FETs 222
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices 221
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 221
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 220
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 220
Graphene Base Transistors with optimized emitter and dielectrics 220
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 220
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach 218
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 218
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 218
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs 218
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 217
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms 217
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 217
A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs 215
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 215
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 215
Nanoscale MOS Transistors: Semi-Classical Transport and Applications 214
Enhanced Ballisticity in nano-MOSFETs along the ITRS Roadmap: A Monte Carlo Study 214
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 214
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 213
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 212
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS 211
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 211
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 211
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers 211
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 210
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 210
Ultra-High Frequency (500 MHz) Capacitance Spectroscopy for Nanobiosensing 210
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 209
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 208
On the Apparent Mobility in Nanometric n-MOSFETs 208
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 208
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 208
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs 207
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 207
Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors ? 207
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 206
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 206
Totale 24.804
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Categoria #
all - tutte 252.887
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 252.887
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20223.943 201 562 474 107 84 204 226 200 467 337 725 356
2022/20233.036 367 262 169 216 463 458 38 313 450 47 131 122
2023/20243.193 128 188 129 315 772 527 308 297 56 53 185 235
2024/202510.541 359 101 94 714 1.992 1.493 252 479 1.169 751 1.393 1.744
2025/202619.425 1.080 847 1.864 1.593 2.196 2.480 2.858 770 1.389 1.537 1.790 1.021
2026/2027919 919 0 0 0 0 0 0 0 0 0 0 0
Totale 58.386