PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 35.932
AS - Asia 14.948
EU - Europa 10.146
SA - Sud America 1.849
Continente sconosciuto - Info sul continente non disponibili 528
AF - Africa 251
OC - Oceania 24
Totale 63.678
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Nazione #
US - Stati Uniti d'America 35.270
SG - Singapore 4.242
CN - Cina 4.163
GB - Regno Unito 3.016
HK - Hong Kong 2.384
IT - Italia 1.743
BR - Brasile 1.470
VN - Vietnam 1.416
DE - Germania 907
PL - Polonia 758
KR - Corea 690
UA - Ucraina 672
SE - Svezia 650
BD - Bangladesh 568
RU - Federazione Russa 542
FR - Francia 466
TR - Turchia 423
IE - Irlanda 303
CA - Canada 301
IN - India 280
BG - Bulgaria 246
FI - Finlandia 227
NL - Olanda 180
JP - Giappone 131
AR - Argentina 128
ID - Indonesia 110
MX - Messico 103
IQ - Iraq 99
LT - Lituania 73
EC - Ecuador 64
AT - Austria 60
ES - Italia 60
PK - Pakistan 59
ZA - Sudafrica 59
TW - Taiwan 46
AE - Emirati Arabi Uniti 45
CO - Colombia 44
JM - Giamaica 42
VE - Venezuela 40
BE - Belgio 39
CR - Costa Rica 39
CL - Cile 37
HN - Honduras 37
PH - Filippine 36
CH - Svizzera 34
MA - Marocco 34
EG - Egitto 31
TN - Tunisia 31
MY - Malesia 30
DZ - Algeria 26
UZ - Uzbekistan 26
PY - Paraguay 25
TH - Thailandia 25
NP - Nepal 24
JO - Giordania 23
PR - Porto Rico 23
SA - Arabia Saudita 23
PT - Portogallo 22
RO - Romania 22
TT - Trinidad e Tobago 22
AU - Australia 21
GR - Grecia 20
NI - Nicaragua 19
GT - Guatemala 17
CZ - Repubblica Ceca 16
EE - Estonia 16
PE - Perù 16
KE - Kenya 15
OM - Oman 14
SV - El Salvador 14
UY - Uruguay 13
BO - Bolivia 10
IR - Iran 10
RS - Serbia 10
AZ - Azerbaigian 9
BB - Barbados 9
GP - Guadalupe 9
HR - Croazia 9
A2 - ???statistics.table.value.countryCode.A2??? 8
AL - Albania 8
AM - Armenia 8
IL - Israele 8
SK - Slovacchia (Repubblica Slovacca) 8
SN - Senegal 8
ET - Etiopia 7
KZ - Kazakistan 7
NO - Norvegia 7
DK - Danimarca 6
EU - Europa 6
LB - Libano 6
QA - Qatar 6
AO - Angola 5
BH - Bahrain 5
CI - Costa d'Avorio 5
CW - ???statistics.table.value.countryCode.CW??? 5
DO - Repubblica Dominicana 5
MK - Macedonia 5
PA - Panama 5
PS - Palestinian Territory 5
KH - Cambogia 4
Totale 63.073
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Città #
Ashburn 4.469
Fairfield 3.706
Santa Clara 2.962
Singapore 2.793
Hong Kong 2.343
San Jose 2.065
Southend 1.862
Hefei 1.770
Woodbridge 1.635
Seattle 1.458
Houston 1.442
Chandler 1.194
Cambridge 1.179
Council Bluffs 1.161
Dearborn 1.145
Wilmington 1.142
Jacksonville 1.005
London 808
Warsaw 746
Seoul 651
Beijing 534
Los Angeles 512
Ann Arbor 497
Chicago 463
Ho Chi Minh City 434
The Dalles 425
Izmir 368
Hanoi 365
Milan 318
New York 312
Dublin 293
Nyköping 293
San Diego 280
Lauterbourg 270
Princeton 244
Sofia 240
Eugene 226
Helsinki 202
Buffalo 180
Dallas 177
Moscow 172
Salt Lake City 167
Washington 146
Modena 142
São Paulo 136
Shanghai 129
Amsterdam 116
Atlanta 108
Redondo Beach 101
Boardman 98
Kent 98
Frankfurt am Main 97
Phoenix 88
Bologna 82
Bremen 80
Tampa 79
Tokyo 79
Da Nang 76
Orem 74
Falls Church 67
Saint Augustine 66
Toronto 65
Nanjing 62
Jakarta 61
San Francisco 60
Rome 59
Elk Grove Village 58
Guangzhou 57
Brooklyn 56
Rio de Janeiro 56
Miano 55
Montreal 46
Norwalk 46
Haiphong 45
Miami 43
Naples 43
Chennai 41
Brantford 40
Columbus 40
Denver 40
Baghdad 35
Kilburn 35
Philadelphia 35
Mexico City 34
Kunming 33
Las Vegas 32
Paris 32
Reggio Emilia 32
Belo Horizonte 31
Munich 31
Newark 31
Boston 30
San José 30
Changsha 28
Charlotte 28
North Charleston 27
Udine 27
Des Moines 26
Detroit 26
Indianapolis 26
Totale 45.952
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 643
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 498
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 452
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 390
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 363
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 337
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 327
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 324
Impact Ionization and Photon Emission in MOS Capacitors and FETs 320
A design methodology for MOS Current-Mode Logic Frequency Dividers 320
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 310
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 309
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 306
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 295
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 292
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 291
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 289
Simulation of DC and RF Performance of the Graphene Base Transistor 287
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 286
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 286
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 284
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 282
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 281
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 280
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 280
Device simulation for decananometer MOSFETs 279
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 278
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 277
Relationship between capacitance and conductance in MOS capacitors 277
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 276
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 273
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 273
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 271
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 269
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 266
A better understanding of the low-field mobility in Graphene Nano-ribbons 264
Impact of carrier heating on backscattering in inversion layers 264
Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET 258
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 258
General model for multiple surface reactions in ion-sensitive FETs 258
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 254
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 254
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 253
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 253
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 251
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 251
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 250
Tunneling path impact on semi-classical numerical simulations of TFET devices 248
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 246
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 246
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 245
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 245
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 244
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 244
Ultra-High Frequency (500 MHz) Capacitance Spectroscopy for Nanobiosensing 244
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 242
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs 242
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 240
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 239
Tunnelling Injection in Thin Oxide MOS Capacitors 237
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 234
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 234
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 234
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 234
Nanoscale MOS Transistors: Semi-Classical Transport and Applications 233
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 233
A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs 232
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 232
On the experimental determination of channel back-scattering in nanoMOSFETs 231
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 231
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 230
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices 230
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 229
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 229
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 228
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 228
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach 228
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part II: Technology Scaling along the ITRS 227
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 227
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 227
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms 224
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 224
Graphene Base Transistors with optimized emitter and dielectrics 224
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 224
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs 223
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 223
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 223
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 223
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 222
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers 221
Enhanced Ballisticity in nano-MOSFETs along the ITRS Roadmap: A Monte Carlo Study 221
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 221
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 220
On the Apparent Mobility in Nanometric n-MOSFETs 219
Can photon emission/absorption processes explain the substrate current of tunneling MOS capacitors ? 219
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 219
Digital and analog TFET circuits: Design and benchmark 217
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 217
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 216
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 216
Totale 26.328
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Categoria #
all - tutte 271.876
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 271.876
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.706 0 0 0 107 84 204 226 200 467 337 725 356
2022/20233.036 367 262 169 216 463 458 38 313 450 47 131 122
2023/20243.193 128 188 129 315 772 527 308 297 56 53 185 235
2024/202510.541 359 101 94 714 1.992 1.493 252 479 1.169 751 1.393 1.744
2025/202619.425 1.080 847 1.864 1.593 2.196 2.480 2.858 770 1.389 1.537 1.790 1.021
2026/20276.211 983 1.262 2.299 1.667 0 0 0 0 0 0 0 0
Totale 63.678