SELMI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 49.282
AS - Asia 18.411
EU - Europa 15.525
SA - Sud America 2.346
AF - Africa 317
OC - Oceania 34
Continente sconosciuto - Info sul continente non disponibili 27
Totale 85.942
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Nazione #
US - Stati Uniti d'America 48.740
SG - Singapore 5.470
GB - Regno Unito 4.965
CN - Cina 4.035
HK - Hong Kong 3.472
IT - Italia 2.151
VN - Vietnam 2.032
BR - Brasile 1.880
DE - Germania 1.606
PL - Polonia 1.349
UA - Ucraina 1.198
SE - Svezia 938
TR - Turchia 735
BD - Bangladesh 718
RU - Federazione Russa 705
FR - Francia 634
KR - Corea 609
BG - Bulgaria 439
FI - Finlandia 373
IE - Irlanda 331
IN - India 317
CA - Canada 302
NL - Olanda 276
AR - Argentina 156
JP - Giappone 154
MX - Messico 121
IQ - Iraq 119
ID - Indonesia 113
TW - Taiwan 96
AT - Austria 90
ZA - Sudafrica 81
AE - Emirati Arabi Uniti 77
ES - Italia 75
EC - Ecuador 71
CH - Svizzera 69
PK - Pakistan 69
CO - Colombia 63
BE - Belgio 62
PH - Filippine 51
MA - Marocco 45
LT - Lituania 44
SA - Arabia Saudita 44
VE - Venezuela 44
CL - Cile 41
EG - Egitto 37
MY - Malesia 36
DZ - Algeria 35
JO - Giordania 34
UZ - Uzbekistan 33
NP - Nepal 32
PY - Paraguay 32
RO - Romania 30
TN - Tunisia 29
AU - Australia 28
GR - Grecia 25
KE - Kenya 24
PT - Portogallo 24
TH - Thailandia 24
UY - Uruguay 22
PE - Perù 20
CR - Costa Rica 19
JM - Giamaica 17
NO - Norvegia 17
CZ - Repubblica Ceca 16
IR - Iran 16
BO - Bolivia 15
DK - Danimarca 15
HN - Honduras 15
OM - Oman 15
KZ - Kazakistan 14
RS - Serbia 13
A2 - ???statistics.table.value.countryCode.A2??? 12
IL - Israele 12
AL - Albania 11
DO - Repubblica Dominicana 10
LB - Libano 10
SK - Slovacchia (Repubblica Slovacca) 10
AZ - Azerbaigian 9
BY - Bielorussia 9
CI - Costa d'Avorio 9
PA - Panama 9
BH - Bahrain 8
ET - Etiopia 8
EU - Europa 8
MD - Moldavia 8
NI - Nicaragua 8
PR - Porto Rico 8
QA - Qatar 8
CY - Cipro 7
HR - Croazia 7
MK - Macedonia 7
TT - Trinidad e Tobago 7
XK - ???statistics.table.value.countryCode.XK??? 7
BB - Barbados 6
GE - Georgia 6
HU - Ungheria 6
KG - Kirghizistan 6
NZ - Nuova Zelanda 6
SN - Senegal 6
BA - Bosnia-Erzegovina 5
Totale 85.830
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Città #
Fairfield 6.416
Ashburn 5.012
Santa Clara 3.950
Singapore 3.872
Hong Kong 3.416
Southend 3.389
Woodbridge 2.754
Seattle 2.437
Houston 2.293
San Jose 2.140
Dearborn 2.112
Chandler 2.044
Cambridge 2.029
Wilmington 1.941
Jacksonville 1.851
Warsaw 1.332
London 1.101
Hefei 941
Ann Arbor 901
Beijing 757
Izmir 670
Council Bluffs 626
Ho Chi Minh City 620
Chicago 611
The Dalles 600
Los Angeles 568
Seoul 550
Hanoi 527
Nyköping 516
San Diego 477
Princeton 432
Sofia 431
Eugene 417
New York 373
Lauterbourg 352
Milan 346
Helsinki 335
Dublin 323
Modena 278
Moscow 231
Washington 223
Buffalo 222
Salt Lake City 209
Dallas 187
São Paulo 161
Amsterdam 148
Redondo Beach 148
Shanghai 136
Frankfurt am Main 129
Bremen 122
Atlanta 115
Da Nang 114
Tampa 114
Bologna 109
Falls Church 104
Tokyo 101
Nanjing 98
Elk Grove Village 84
Boardman 83
Miano 81
Norwalk 80
Guangzhou 76
Brooklyn 75
Rio de Janeiro 74
Orem 72
Haiphong 71
Toronto 71
San Francisco 66
Phoenix 65
Kunming 64
Jakarta 63
Rome 59
Brantford 55
Reggio Emilia 51
Kent 49
Miami 49
Taipei 48
Zurich 48
Nuremberg 47
Denver 46
Jinan 46
Chennai 44
Udine 44
Kilburn 43
Columbus 42
Montreal 42
Belo Horizonte 41
Redwood City 40
Baghdad 39
Changsha 36
Munich 36
Boston 34
Detroit 34
Mexico City 34
Sterling 34
Paris 33
Vienna 33
Charlotte 32
Hải Dương 32
Philadelphia 32
Totale 64.639
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 620
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 480
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects 470
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 453
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 425
Role of Different Receptor-Surface Binding Modes in the Morphological and Electrochemical Properties of Peptide-Nucleic-Acid-Based Sensing Platforms 378
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 371
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 354
ENBIOS-1D Lab 347
ENBIOS-2D Lab 325
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 325
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 318
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 309
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 308
Impact Ionization and Photon Emission in MOS Capacitors and FETs 305
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 305
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 303
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 302
A design methodology for MOS Current-Mode Logic Frequency Dividers 300
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 299
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 295
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections 293
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 290
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 290
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 286
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 286
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 286
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 280
Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes 278
Well-tempered MOSFETs: 1D versus 2D quantum analysis 278
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 277
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 274
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 274
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 272
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 272
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 271
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 269
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 268
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 268
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 268
Simulation of DC and RF Performance of the Graphene Base Transistor 267
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 264
Device simulation for decananometer MOSFETs 264
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 263
Relationship between capacitance and conductance in MOS capacitors 262
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 261
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 261
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 260
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 256
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 255
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 250
Impact of carrier heating on backscattering in inversion layers 248
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 247
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 246
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 246
A better understanding of the low-field mobility in Graphene Nano-ribbons 246
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 245
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays 243
Tunneling path impact on semi-classical numerical simulations of TFET devices 242
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 242
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 241
Morphological and electrochemical properties of different PNA-based sensing platforms – Impact of the receptor-surface binding modes 239
Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements 238
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 237
On the electron mobility enhancement in biaxially strained Si MOSFETs 237
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 237
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 237
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 235
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 235
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 234
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 234
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 233
A novel method to determine the Source and Drain resistances of individual MOSFETs 233
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 233
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 233
Calibration of High-Frequency Impedance Spectroscopy Measurements with Nanocapacitor Arrays 233
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices 232
Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET 232
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 231
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 231
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 230
Effects of electrical stress and ionizing radiation on Si-based TFETs 230
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 230
Experimental Demonstration of Improved Analog Device Performance in GAA-NW-TFETs 229
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 229
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 229
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 228
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 228
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 228
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 228
Latch-up in CMOS circuits: a review 226
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 224
On the experimental determination of channel back-scattering in nanoMOSFETs 223
Tunnelling Injection in Thin Oxide MOS Capacitors 223
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 223
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 223
Device variability and correlation control by automated tuning of SPICE cards to PCM measurements 222
General model for multiple surface reactions in ion-sensitive FETs 222
On the design of LDMOS finFETs in advanced technology nodes 221
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 220
Totale 27.151
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Categoria #
all - tutte 358.858
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 358.858
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20226.802 290 1.024 904 178 123 324 401 341 777 570 1.263 607
2022/20235.178 635 409 307 403 797 767 70 530 791 90 206 173
2023/20244.699 192 303 188 520 1.322 674 404 482 58 80 204 272
2024/202513.904 609 139 136 930 2.752 1.960 316 683 1.534 941 1.547 2.357
2025/202624.308 970 577 1.757 1.606 3.124 3.927 3.742 1.091 1.875 1.978 2.371 1.290
2026/20271.230 1.230 0 0 0 0 0 0 0 0 0 0 0
Totale 86.615