SELMI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 47.882
AS - Asia 17.726
EU - Europa 15.177
SA - Sud America 2.285
AF - Africa 301
OC - Oceania 34
Continente sconosciuto - Info sul continente non disponibili 27
Totale 83.432
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Nazione #
US - Stati Uniti d'America 47.433
SG - Singapore 5.392
GB - Regno Unito 4.953
CN - Cina 3.922
HK - Hong Kong 3.451
VN - Vietnam 2.009
IT - Italia 1.901
BR - Brasile 1.837
DE - Germania 1.598
PL - Polonia 1.344
UA - Ucraina 1.196
SE - Svezia 932
TR - Turchia 735
RU - Federazione Russa 700
FR - Francia 619
KR - Corea 589
BG - Bulgaria 438
FI - Finlandia 370
BD - Bangladesh 357
IE - Irlanda 329
IN - India 298
NL - Olanda 270
CA - Canada 247
AR - Argentina 153
JP - Giappone 146
IQ - Iraq 117
MX - Messico 115
ID - Indonesia 110
AT - Austria 82
ZA - Sudafrica 80
AE - Emirati Arabi Uniti 77
ES - Italia 73
EC - Ecuador 71
CH - Svizzera 67
PK - Pakistan 67
TW - Taiwan 67
CO - Colombia 57
BE - Belgio 52
PH - Filippine 51
MA - Marocco 45
LT - Lituania 44
SA - Arabia Saudita 44
VE - Venezuela 42
CL - Cile 38
MY - Malesia 34
JO - Giordania 33
UZ - Uzbekistan 33
EG - Egitto 32
NP - Nepal 31
PY - Paraguay 30
TN - Tunisia 29
AU - Australia 28
RO - Romania 28
DZ - Algeria 27
GR - Grecia 25
KE - Kenya 24
PT - Portogallo 23
TH - Thailandia 23
UY - Uruguay 21
PE - Perù 20
NO - Norvegia 17
IR - Iran 16
OM - Oman 15
BO - Bolivia 14
CZ - Repubblica Ceca 14
DK - Danimarca 14
KZ - Kazakistan 14
CR - Costa Rica 13
A2 - ???statistics.table.value.countryCode.A2??? 12
IL - Israele 12
AL - Albania 11
JM - Giamaica 11
RS - Serbia 11
DO - Repubblica Dominicana 10
LB - Libano 10
AZ - Azerbaigian 9
BY - Bielorussia 9
PA - Panama 9
SK - Slovacchia (Repubblica Slovacca) 9
BH - Bahrain 8
CI - Costa d'Avorio 8
ET - Etiopia 8
EU - Europa 8
HN - Honduras 8
MD - Moldavia 8
QA - Qatar 8
CY - Cipro 7
HR - Croazia 7
MK - Macedonia 7
PR - Porto Rico 7
XK - ???statistics.table.value.countryCode.XK??? 7
GE - Georgia 6
HU - Ungheria 6
KG - Kirghizistan 6
NZ - Nuova Zelanda 6
SN - Senegal 6
GT - Guatemala 5
LV - Lettonia 5
NG - Nigeria 5
PS - Palestinian Territory 5
Totale 83.330
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Città #
Fairfield 6.416
Ashburn 4.643
Santa Clara 3.855
Singapore 3.828
Hong Kong 3.396
Southend 3.389
Woodbridge 2.754
Seattle 2.436
Houston 2.291
Dearborn 2.112
San Jose 2.066
Chandler 2.043
Cambridge 2.029
Wilmington 1.940
Jacksonville 1.850
Warsaw 1.331
London 1.095
Ann Arbor 901
Hefei 898
Beijing 746
Izmir 670
Council Bluffs 622
Ho Chi Minh City 615
Chicago 603
The Dalles 597
Seoul 537
Los Angeles 520
Hanoi 519
Nyköping 516
San Diego 477
Princeton 432
Sofia 431
Eugene 417
Lauterbourg 350
New York 344
Helsinki 334
Milan 324
Dublin 321
Modena 271
Moscow 230
Washington 220
Salt Lake City 208
Buffalo 205
Dallas 160
São Paulo 154
Redondo Beach 148
Amsterdam 145
Shanghai 133
Frankfurt am Main 128
Bremen 122
Tampa 114
Da Nang 113
Atlanta 107
Falls Church 104
Nanjing 97
Tokyo 97
Bologna 93
Elk Grove Village 84
Boardman 82
Miano 81
Norwalk 80
Guangzhou 73
Rio de Janeiro 73
Haiphong 70
Orem 70
Brooklyn 69
Kunming 64
San Francisco 64
Jakarta 62
Toronto 62
Phoenix 60
Brantford 54
Zurich 48
Kent 47
Reggio Emilia 47
Jinan 46
Miami 46
Nuremberg 45
Udine 44
Chennai 43
Denver 43
Kilburn 43
Belo Horizonte 41
Columbus 41
Redwood City 40
Montreal 39
Rome 38
Baghdad 37
Changsha 35
Munich 34
Sterling 34
Taipei 34
Boston 33
Paris 33
Detroit 32
Hải Dương 32
Vienna 31
Biên Hòa 30
Chiswick 30
Dulles 30
Totale 63.621
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 598
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 475
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects 468
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 451
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 418
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 370
Role of Different Receptor-Surface Binding Modes in the Morphological and Electrochemical Properties of Peptide-Nucleic-Acid-Based Sensing Platforms 356
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 345
ENBIOS-1D Lab 344
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 323
ENBIOS-2D Lab 318
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 308
Impact Ionization and Photon Emission in MOS Capacitors and FETs 303
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 302
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 300
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 300
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 298
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 296
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 292
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections 292
A design methodology for MOS Current-Mode Logic Frequency Dividers 292
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 284
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 284
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 283
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 282
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 279
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 278
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 275
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 274
Well-tempered MOSFETs: 1D versus 2D quantum analysis 272
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 271
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 267
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 266
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 266
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 266
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 264
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 264
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 261
Device simulation for decananometer MOSFETs 261
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 259
Relationship between capacitance and conductance in MOS capacitors 259
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 258
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 257
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 257
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 253
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 253
A better understanding of the low-field mobility in Graphene Nano-ribbons 244
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 244
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 244
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 243
Impact of carrier heating on backscattering in inversion layers 242
Tunneling path impact on semi-classical numerical simulations of TFET devices 241
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 240
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 240
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays 239
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 239
Simulation of DC and RF Performance of the Graphene Base Transistor 238
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 236
Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements 235
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 234
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 234
A novel method to determine the Source and Drain resistances of individual MOSFETs 233
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 233
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 233
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 233
Calibration of High-Frequency Impedance Spectroscopy Measurements with Nanocapacitor Arrays 232
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 231
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 230
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices 230
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 230
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 230
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 229
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 228
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 228
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 228
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 228
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 227
Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET 227
Effects of electrical stress and ionizing radiation on Si-based TFETs 227
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 226
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 226
On the electron mobility enhancement in biaxially strained Si MOSFETs 225
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 225
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 224
Morphological and electrochemical properties of different PNA-based sensing platforms – Impact of the receptor-surface binding modes 224
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 224
Experimental Demonstration of Improved Analog Device Performance in GAA-NW-TFETs 223
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 223
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 223
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 222
Tunnelling Injection in Thin Oxide MOS Capacitors 222
Device variability and correlation control by automated tuning of SPICE cards to PCM measurements 221
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 220
General model for multiple surface reactions in ion-sensitive FETs 220
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices 219
Long term charge retention dynamics of SONOS cells 219
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 219
Latch-up in CMOS circuits: a review 219
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 219
On the experimental determination of channel back-scattering in nanoMOSFETs 218
Totale 26.533
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Categoria #
all - tutte 346.468
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 346.468
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021545 0 0 0 0 0 0 0 0 0 0 0 545
2021/20226.802 290 1.024 904 178 123 324 401 341 777 570 1.263 607
2022/20235.178 635 409 307 403 797 767 70 530 791 90 206 173
2023/20244.699 192 303 188 520 1.322 674 404 482 58 80 204 272
2024/202513.702 609 139 136 902 2.719 1.938 302 678 1.520 935 1.508 2.316
2025/202623.223 927 549 1.721 1.557 3.104 3.915 3.704 1.081 1.856 1.964 2.365 480
Totale 84.098