SELMI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 52.060
AS - Asia 18.547
EU - Europa 15.703
SA - Sud America 2.359
Continente sconosciuto - Info sul continente non disponibili 702
AF - Africa 319
OC - Oceania 34
Totale 89.724
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Nazione #
US - Stati Uniti d'America 51.402
SG - Singapore 5.487
GB - Regno Unito 4.969
CN - Cina 4.052
HK - Hong Kong 3.487
IT - Italia 2.306
VN - Vietnam 2.037
BR - Brasile 1.883
DE - Germania 1.609
PL - Polonia 1.349
UA - Ucraina 1.200
SE - Svezia 938
BD - Bangladesh 762
TR - Turchia 736
RU - Federazione Russa 705
FR - Francia 639
KR - Corea 614
BG - Bulgaria 439
FI - Finlandia 373
CA - Canada 335
IN - India 332
IE - Irlanda 331
NL - Olanda 278
AR - Argentina 157
JP - Giappone 157
MX - Messico 127
IQ - Iraq 120
ID - Indonesia 114
TW - Taiwan 98
AT - Austria 93
ZA - Sudafrica 81
AE - Emirati Arabi Uniti 77
ES - Italia 77
EC - Ecuador 73
CH - Svizzera 70
PK - Pakistan 69
CO - Colombia 64
BE - Belgio 62
PH - Filippine 53
CR - Costa Rica 49
CL - Cile 46
MA - Marocco 45
VE - Venezuela 45
LT - Lituania 44
SA - Arabia Saudita 44
MY - Malesia 41
EG - Egitto 37
JM - Giamaica 37
DZ - Algeria 35
JO - Giordania 35
UZ - Uzbekistan 33
NP - Nepal 32
PY - Paraguay 32
RO - Romania 30
TN - Tunisia 29
AU - Australia 28
TH - Thailandia 26
GR - Grecia 25
KE - Kenya 24
PT - Portogallo 24
UY - Uruguay 22
HN - Honduras 21
PE - Perù 20
NO - Norvegia 17
CZ - Repubblica Ceca 16
IR - Iran 16
BO - Bolivia 15
DK - Danimarca 15
OM - Oman 15
KZ - Kazakistan 14
RS - Serbia 13
TT - Trinidad e Tobago 13
A2 - ???statistics.table.value.countryCode.A2??? 12
IL - Israele 12
PR - Porto Rico 12
AL - Albania 11
DO - Repubblica Dominicana 10
GT - Guatemala 10
LB - Libano 10
NI - Nicaragua 10
SK - Slovacchia (Repubblica Slovacca) 10
AZ - Azerbaigian 9
BY - Bielorussia 9
CI - Costa d'Avorio 9
PA - Panama 9
BH - Bahrain 8
ET - Etiopia 8
EU - Europa 8
HR - Croazia 8
MD - Moldavia 8
QA - Qatar 8
CY - Cipro 7
MK - Macedonia 7
XK - ???statistics.table.value.countryCode.XK??? 7
BB - Barbados 6
GE - Georgia 6
HU - Ungheria 6
KG - Kirghizistan 6
NZ - Nuova Zelanda 6
SN - Senegal 6
Totale 88.931
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Città #
Fairfield 6.416
Ashburn 5.735
Santa Clara 3.998
Singapore 3.883
Hong Kong 3.429
Southend 3.389
Woodbridge 2.754
Seattle 2.441
San Jose 2.345
Houston 2.305
Dearborn 2.112
Chandler 2.044
Cambridge 2.030
Wilmington 1.947
Jacksonville 1.852
Warsaw 1.332
Council Bluffs 1.169
London 1.103
Hefei 941
Ann Arbor 901
Beijing 762
Izmir 670
Chicago 641
Ho Chi Minh City 620
Los Angeles 610
The Dalles 601
Seoul 550
Hanoi 530
Nyköping 516
San Diego 478
Princeton 432
Sofia 431
Milan 420
Eugene 417
New York 398
Lauterbourg 352
Helsinki 335
Dublin 323
Modena 278
Buffalo 236
Moscow 231
Washington 227
Salt Lake City 210
Dallas 208
São Paulo 161
Redondo Beach 149
Amsterdam 148
Shanghai 138
Frankfurt am Main 131
Atlanta 127
Bremen 122
Tampa 117
Da Nang 115
Bologna 112
Falls Church 105
Tokyo 101
Nanjing 98
Phoenix 98
Elk Grove Village 84
Boardman 83
Miano 82
Norwalk 80
Brooklyn 79
Toronto 79
Guangzhou 76
Rio de Janeiro 74
San Francisco 73
Orem 72
Haiphong 71
Rome 66
Kunming 64
Jakarta 63
Brantford 57
Miami 55
Columbus 52
Denver 51
Kent 51
Reggio Emilia 51
Chennai 49
Zurich 49
Taipei 48
Nuremberg 47
Jinan 46
Montreal 44
Udine 44
Kilburn 43
Philadelphia 42
Belo Horizonte 41
Redwood City 40
Baghdad 39
Boston 39
Charlotte 38
San José 38
Mexico City 37
Changsha 36
Detroit 36
Munich 36
Vienna 36
Las Vegas 34
Sterling 34
Totale 66.583
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 631
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 485
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects 481
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 464
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 434
ENBIOS-1D Lab 403
ENBIOS-2D Lab 393
Role of Different Receptor-Surface Binding Modes in the Morphological and Electrochemical Properties of Peptide-Nucleic-Acid-Based Sensing Platforms 388
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 377
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 367
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 331
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 322
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 320
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 317
Impact Ionization and Photon Emission in MOS Capacitors and FETs 313
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 313
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 311
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 308
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 306
A design methodology for MOS Current-Mode Logic Frequency Dividers 305
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 299
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 298
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 297
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 296
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 296
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 296
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections 295
Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes 294
Well-tempered MOSFETs: 1D versus 2D quantum analysis 285
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 284
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 283
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 282
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 280
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 279
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 278
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 277
Simulation of DC and RF Performance of the Graphene Base Transistor 275
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 274
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 273
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 273
Device simulation for decananometer MOSFETs 273
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 270
Relationship between capacitance and conductance in MOS capacitors 270
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 268
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 267
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 267
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 266
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 264
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 261
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 260
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 260
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 256
A better understanding of the low-field mobility in Graphene Nano-ribbons 254
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 253
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays 252
Impact of carrier heating on backscattering in inversion layers 252
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 250
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 249
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 248
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 247
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 246
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 246
Morphological and electrochemical properties of different PNA-based sensing platforms – Impact of the receptor-surface binding modes 246
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 244
Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements 244
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices 244
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 244
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 244
Tunneling path impact on semi-classical numerical simulations of TFET devices 243
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 243
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 242
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 241
Calibration of High-Frequency Impedance Spectroscopy Measurements with Nanocapacitor Arrays 241
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 240
On the electron mobility enhancement in biaxially strained Si MOSFETs 240
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 240
Experimental Demonstration of Improved Analog Device Performance in GAA-NW-TFETs 239
A novel method to determine the Source and Drain resistances of individual MOSFETs 239
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 239
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 239
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 239
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 238
General model for multiple surface reactions in ion-sensitive FETs 238
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 236
Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET 236
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 235
Effects of electrical stress and ionizing radiation on Si-based TFETs 234
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 233
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 233
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 232
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 232
On the design of LDMOS finFETs in advanced technology nodes 231
Tunnelling Injection in Thin Oxide MOS Capacitors 231
Latch-up in CMOS circuits: a review 230
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 230
Long term charge retention dynamics of SONOS cells 228
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs 228
On the experimental determination of channel back-scattering in nanoMOSFETs 227
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 227
Device variability and correlation control by automated tuning of SPICE cards to PCM measurements 227
Totale 27.959
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Categoria #
all - tutte 371.242
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 371.242
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20225.488 0 0 904 178 123 324 401 341 777 570 1.263 607
2022/20235.178 635 409 307 403 797 767 70 530 791 90 206 173
2023/20244.699 192 303 188 520 1.322 674 404 482 58 80 204 272
2024/202513.904 609 139 136 930 2.752 1.960 316 683 1.534 941 1.547 2.357
2025/202624.308 970 577 1.757 1.606 3.124 3.927 3.742 1.091 1.875 1.978 2.371 1.290
2026/20274.339 1.423 1.790 1.126 0 0 0 0 0 0 0 0 0
Totale 89.724