SELMI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 43.031
EU - Europa 13.714
AS - Asia 12.965
SA - Sud America 1.920
AF - Africa 173
Continente sconosciuto - Info sul continente non disponibili 25
OC - Oceania 25
Totale 71.853
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Nazione #
US - Stati Uniti d'America 42.800
GB - Regno Unito 4.897
SG - Singapore 3.977
CN - Cina 3.474
HK - Hong Kong 3.191
BR - Brasile 1.621
DE - Germania 1.532
PL - Polonia 1.333
IT - Italia 1.309
UA - Ucraina 1.176
SE - Svezia 932
TR - Turchia 715
RU - Federazione Russa 693
VN - Vietnam 560
BG - Bulgaria 432
IE - Irlanda 324
KR - Corea 271
NL - Olanda 216
FI - Finlandia 215
FR - Francia 198
IN - India 158
AR - Argentina 115
CA - Canada 111
JP - Giappone 104
AT - Austria 86
BD - Bangladesh 81
ID - Indonesia 79
TW - Taiwan 76
MX - Messico 70
CH - Svizzera 65
ZA - Sudafrica 60
IQ - Iraq 57
ES - Italia 55
BE - Belgio 50
EC - Ecuador 48
LT - Lituania 43
PK - Pakistan 32
MA - Marocco 28
CO - Colombia 26
SA - Arabia Saudita 26
CL - Cile 25
VE - Venezuela 25
AE - Emirati Arabi Uniti 23
PY - Paraguay 23
RO - Romania 23
GR - Grecia 22
AU - Australia 19
NO - Norvegia 17
UZ - Uzbekistan 17
NP - Nepal 16
PT - Portogallo 16
DZ - Algeria 15
EG - Egitto 15
IR - Iran 15
JO - Giordania 15
CZ - Repubblica Ceca 13
MY - Malesia 13
TN - Tunisia 13
UY - Uruguay 13
A2 - ???statistics.table.value.countryCode.A2??? 12
DK - Danimarca 12
KE - Kenya 12
PE - Perù 12
BO - Bolivia 10
IL - Israele 10
EU - Europa 8
JM - Giamaica 8
KZ - Kazakistan 8
HR - Croazia 7
OM - Oman 7
PA - Panama 7
AL - Albania 6
MK - Macedonia 6
NZ - Nuova Zelanda 6
HU - Ungheria 5
MD - Moldavia 5
PH - Filippine 5
SK - Slovacchia (Repubblica Slovacca) 5
XK - ???statistics.table.value.countryCode.XK??? 5
AZ - Azerbaigian 4
BA - Bosnia-Erzegovina 4
BY - Bielorussia 4
CI - Costa d'Avorio 4
DO - Repubblica Dominicana 4
EE - Estonia 4
GT - Guatemala 4
HN - Honduras 4
KG - Kirghizistan 4
TT - Trinidad e Tobago 4
BH - Bahrain 3
CR - Costa Rica 3
ET - Etiopia 3
KW - Kuwait 3
LA - Repubblica Popolare Democratica del Laos 3
LV - Lettonia 3
RS - Serbia 3
SY - Repubblica araba siriana 3
TH - Thailandia 3
AM - Armenia 2
BB - Barbados 2
Totale 71.801
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Città #
Fairfield 6.416
Santa Clara 3.779
Ashburn 3.703
Southend 3.389
Hong Kong 3.176
Singapore 2.916
Woodbridge 2.754
Seattle 2.434
Houston 2.283
Dearborn 2.112
Chandler 2.044
Cambridge 2.028
Wilmington 1.939
Jacksonville 1.845
Warsaw 1.321
London 1.094
Hefei 940
Ann Arbor 901
Izmir 670
Beijing 649
Chicago 565
Nyköping 516
San Diego 470
Los Angeles 440
Princeton 432
Sofia 430
Eugene 417
Council Bluffs 342
Dublin 316
New York 280
The Dalles 251
Modena 244
Seoul 231
Moscow 227
Salt Lake City 199
Buffalo 196
Washington 189
Ho Chi Minh City 184
Helsinki 182
Hanoi 150
Redondo Beach 148
Shanghai 128
Dallas 127
Amsterdam 126
São Paulo 124
Bremen 122
Tampa 107
Falls Church 104
Bologna 100
Nanjing 98
Milan 90
Frankfurt am Main 89
Elk Grove Village 82
Norwalk 79
Guangzhou 74
Atlanta 67
Boardman 65
Kunming 64
Rio de Janeiro 64
Brooklyn 62
Tokyo 62
Jakarta 59
San Francisco 59
Phoenix 52
Kent 49
Reggio Emilia 49
Zurich 47
Jinan 46
Kilburn 43
Taipei 43
Udine 43
Miami 42
Columbus 41
Redwood City 40
Belo Horizonte 39
Nuremberg 37
Changsha 34
Munich 34
Sterling 34
Denver 33
Boston 32
Vienna 31
Chiswick 30
Dulles 30
Montreal 30
Lancaster 29
Detroit 28
Hounslow 28
Nanchang 28
Toronto 27
Véry 27
Parma 26
Fuzhou 25
Philadelphia 24
Lappeenranta 23
Paris 23
Prescot 23
Ottawa 22
Porto Alegre 22
Rome 22
Totale 55.990
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 545
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 433
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects 431
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 402
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 375
Role of Different Receptor-Surface Binding Modes in the Morphological and Electrochemical Properties of Peptide-Nucleic-Acid-Based Sensing Platforms 320
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 319
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 315
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 291
ENBIOS-1D Lab 285
Impact Ionization and Photon Emission in MOS Capacitors and FETs 273
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 269
ENBIOS-2D Lab 267
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 265
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 262
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 259
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 253
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 252
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 252
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 251
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 250
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections 249
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 247
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 246
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 245
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 243
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 243
Well-tempered MOSFETs: 1D versus 2D quantum analysis 238
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 237
A design methodology for MOS Current-Mode Logic Frequency Dividers 235
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 233
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 232
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 231
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 230
Device simulation for decananometer MOSFETs 229
Relationship between capacitance and conductance in MOS capacitors 228
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 224
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 223
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 223
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 222
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 222
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 222
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 221
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 220
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 220
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 218
A better understanding of the low-field mobility in Graphene Nano-ribbons 218
Impact of carrier heating on backscattering in inversion layers 214
A novel method to determine the Source and Drain resistances of individual MOSFETs 209
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 209
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 207
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 207
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 206
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 206
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 206
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 205
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices 205
Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements 204
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 204
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 202
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 202
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 202
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 201
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 201
On the electron mobility enhancement in biaxially strained Si MOSFETs 200
Tunneling path impact on semi-classical numerical simulations of TFET devices 199
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 199
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 199
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 199
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 198
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 197
Calibration of High-Frequency Impedance Spectroscopy Measurements with Nanocapacitor Arrays 197
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 195
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 195
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 194
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 194
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 192
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 192
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors 192
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms 191
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 191
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices 190
Analysis of Dielectric Microbead Detection by Impedance Spectroscopy with Nanoribbons 190
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 190
On the experimental determination of channel back-scattering in nanoMOSFETs 189
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade 189
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 189
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 189
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 189
Hysteresis cycle in the Latch-up characteristic of wide CMOS structures 189
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 188
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach 187
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 186
Characterization of the Transient Behavior of a GaAs MESFET Using Dynamic I-V and S-parameter Measurements 186
Long term charge retention dynamics of SONOS cells 186
Effects of electrical stress and ionizing radiation on Si-based TFETs 186
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs 186
Latch-up in CMOS circuits: a review 186
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 186
Simulation of DC and RF Performance of the Graphene Base Transistor 185
Totale 22.948
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Categoria #
all - tutte 316.741
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 316.741
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20216.547 0 0 0 0 0 808 1.014 1.652 422 1.602 504 545
2021/20226.802 290 1.024 904 178 123 324 401 341 777 570 1.263 607
2022/20235.178 635 409 307 403 797 767 70 530 791 90 206 173
2023/20244.699 192 303 188 520 1.322 674 404 482 58 80 204 272
2024/202513.904 609 139 136 930 2.752 1.960 316 683 1.534 941 1.547 2.357
2025/202611.440 970 577 1.757 1.606 3.124 3.406 0 0 0 0 0 0
Totale 72.517