SELMI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 56.059
AS - Asia 18.608
EU - Europa 16.023
SA - Sud America 2.392
Continente sconosciuto - Info sul continente non disponibili 714
AF - Africa 327
OC - Oceania 34
Totale 94.157
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Nazione #
US - Stati Uniti d'America 55.108
SG - Singapore 5.491
GB - Regno Unito 5.009
CN - Cina 4.057
HK - Hong Kong 3.490
IT - Italia 2.527
VN - Vietnam 2.037
BR - Brasile 1.907
DE - Germania 1.616
PL - Polonia 1.350
UA - Ucraina 1.200
SE - Svezia 942
BD - Bangladesh 765
TR - Turchia 737
RU - Federazione Russa 711
FR - Francia 646
KR - Corea 624
BG - Bulgaria 439
CA - Canada 431
FI - Finlandia 373
IN - India 341
IE - Irlanda 333
NL - Olanda 282
JP - Giappone 162
AR - Argentina 159
MX - Messico 132
IQ - Iraq 120
ID - Indonesia 119
TW - Taiwan 102
AT - Austria 93
ES - Italia 85
ZA - Sudafrica 82
AE - Emirati Arabi Uniti 78
EC - Ecuador 76
CH - Svizzera 70
CR - Costa Rica 69
PK - Pakistan 69
CO - Colombia 67
BE - Belgio 62
PH - Filippine 55
JM - Giamaica 51
CL - Cile 47
HN - Honduras 47
LT - Lituania 46
MA - Marocco 46
SA - Arabia Saudita 46
VE - Venezuela 45
MY - Malesia 44
EG - Egitto 37
DZ - Algeria 36
TT - Trinidad e Tobago 36
JO - Giordania 35
PR - Porto Rico 33
TN - Tunisia 33
UZ - Uzbekistan 33
NP - Nepal 32
PY - Paraguay 32
NI - Nicaragua 30
RO - Romania 30
AU - Australia 28
GT - Guatemala 28
TH - Thailandia 27
SV - El Salvador 26
GR - Grecia 25
KE - Kenya 24
PT - Portogallo 24
UY - Uruguay 22
PE - Perù 20
DK - Danimarca 17
EE - Estonia 17
NO - Norvegia 17
CZ - Repubblica Ceca 16
IR - Iran 16
OM - Oman 16
BO - Bolivia 15
GP - Guadalupe 14
IL - Israele 14
KZ - Kazakistan 14
AL - Albania 13
RS - Serbia 13
A2 - ???statistics.table.value.countryCode.A2??? 12
BB - Barbados 11
DO - Repubblica Dominicana 11
CW - ???statistics.table.value.countryCode.CW??? 10
LB - Libano 10
SK - Slovacchia (Repubblica Slovacca) 10
AZ - Azerbaigian 9
BY - Bielorussia 9
CI - Costa d'Avorio 9
PA - Panama 9
BH - Bahrain 8
ET - Etiopia 8
EU - Europa 8
HR - Croazia 8
MD - Moldavia 8
QA - Qatar 8
CY - Cipro 7
MK - Macedonia 7
XK - ???statistics.table.value.countryCode.XK??? 7
GE - Georgia 6
Totale 93.336
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Città #
Ashburn 6.829
Fairfield 6.416
Santa Clara 4.039
Singapore 3.885
Hong Kong 3.432
Southend 3.389
Woodbridge 2.755
San Jose 2.670
Seattle 2.454
Houston 2.311
Dearborn 2.112
Chandler 2.044
Cambridge 2.030
Wilmington 1.948
Jacksonville 1.856
Council Bluffs 1.530
Warsaw 1.333
London 1.106
Hefei 941
Ann Arbor 901
Beijing 763
Izmir 670
Los Angeles 657
Chicago 651
Ho Chi Minh City 620
The Dalles 601
Seoul 551
Hanoi 530
Nyköping 516
San Diego 480
Milan 442
Princeton 433
New York 432
Sofia 431
Eugene 417
Lauterbourg 352
Helsinki 335
Dublin 323
Modena 283
Buffalo 242
Dallas 238
Washington 234
Moscow 231
Salt Lake City 210
São Paulo 172
Amsterdam 151
Redondo Beach 150
Atlanta 148
Shanghai 138
Frankfurt am Main 131
Bologna 124
Bremen 122
Phoenix 119
Tampa 119
Da Nang 115
Norfolk 111
Falls Church 106
Tokyo 102
Nanjing 98
Saint Augustine 96
Toronto 95
Brooklyn 94
Boardman 88
Rome 87
Elk Grove Village 85
Columbus 82
Miano 82
San Francisco 82
Norwalk 81
Orem 79
Guangzhou 76
Rio de Janeiro 74
Haiphong 71
Denver 64
Kunming 64
Jakarta 63
Montreal 61
Miami 58
Brantford 57
San José 54
Naples 53
Philadelphia 53
Reggio Emilia 53
Kent 52
Chennai 49
Zurich 49
Taipei 48
Nuremberg 47
Jinan 46
Boston 44
Las Vegas 44
Udine 44
Kilburn 43
Belo Horizonte 41
Charlotte 41
Newark 40
Redwood City 40
Baghdad 39
Mexico City 38
Detroit 37
Totale 69.023
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 646
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects 505
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 500
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 480
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 453
ENBIOS-1D Lab 413
ENBIOS-2D Lab 409
Role of Different Receptor-Surface Binding Modes in the Morphological and Electrochemical Properties of Peptide-Nucleic-Acid-Based Sensing Platforms 398
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 391
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 388
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 365
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 340
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 333
Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes 327
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 327
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 325
A design methodology for MOS Current-Mode Logic Frequency Dividers 322
Impact Ionization and Photon Emission in MOS Capacitors and FETs 321
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 320
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 319
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 317
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 314
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 311
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 311
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 311
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 309
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 306
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections 305
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 298
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 295
Well-tempered MOSFETs: 1D versus 2D quantum analysis 293
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 292
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 291
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 291
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 288
Simulation of DC and RF Performance of the Graphene Base Transistor 287
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 286
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 283
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 283
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 281
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 281
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 280
Device simulation for decananometer MOSFETs 280
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 279
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 278
Relationship between capacitance and conductance in MOS capacitors 278
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 277
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 273
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 273
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 273
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 271
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 270
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 268
A better understanding of the low-field mobility in Graphene Nano-ribbons 267
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 266
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays 265
Impact of carrier heating on backscattering in inversion layers 264
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 263
Morphological and electrochemical properties of different PNA-based sensing platforms – Impact of the receptor-surface binding modes 263
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 262
Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET 262
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 261
General model for multiple surface reactions in ion-sensitive FETs 258
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 255
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 254
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 254
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 254
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 254
Calibration of High-Frequency Impedance Spectroscopy Measurements with Nanocapacitor Arrays 254
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 254
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 253
On the electron mobility enhancement in biaxially strained Si MOSFETs 253
Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements 253
On the design of LDMOS finFETs in advanced technology nodes 251
Experimental Demonstration of Improved Analog Device Performance in GAA-NW-TFETs 251
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 250
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices 250
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 250
Tunneling path impact on semi-classical numerical simulations of TFET devices 248
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 248
A novel method to determine the Source and Drain resistances of individual MOSFETs 247
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 246
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 246
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 246
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 245
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 244
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 244
Ultra-High Frequency (500 MHz) Capacitance Spectroscopy for Nanobiosensing 244
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 243
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs 243
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 242
Design and evaluation of mixed 3T-4T FinFET stacks for leakage reduction 242
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 241
Latch-up in CMOS circuits: a review 241
Device variability and correlation control by automated tuning of SPICE cards to PCM measurements 240
Effects of electrical stress and ionizing radiation on Si-based TFETs 239
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 239
Long term charge retention dynamics of SONOS cells 237
Tunnelling Injection in Thin Oxide MOS Capacitors 237
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness 236
Totale 29.174
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Categoria #
all - tutte 385.795
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 385.795
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20224.584 0 0 0 178 123 324 401 341 777 570 1.263 607
2022/20235.178 635 409 307 403 797 767 70 530 791 90 206 173
2023/20244.699 192 303 188 520 1.322 674 404 482 58 80 204 272
2024/202513.904 609 139 136 930 2.752 1.960 316 683 1.534 941 1.547 2.357
2025/202624.308 970 577 1.757 1.606 3.124 3.927 3.742 1.091 1.875 1.978 2.371 1.290
2026/20278.772 1.423 1.790 3.062 2.497 0 0 0 0 0 0 0 0
Totale 94.157