SELMI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 45.623
AS - Asia 17.608
EU - Europa 14.743
SA - Sud America 2.312
AF - Africa 310
OC - Oceania 33
Continente sconosciuto - Info sul continente non disponibili 27
Totale 80.656
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Nazione #
US - Stati Uniti d'America 45.225
SG - Singapore 5.368
GB - Regno Unito 4.954
CN - Cina 3.957
HK - Hong Kong 3.457
VN - Vietnam 2.029
BR - Brasile 1.859
DE - Germania 1.599
IT - Italia 1.436
PL - Polonia 1.346
UA - Ucraina 1.196
SE - Svezia 938
TR - Turchia 735
RU - Federazione Russa 705
FR - Francia 626
KR - Corea 594
BG - Bulgaria 438
FI - Finlandia 373
IE - Irlanda 329
IN - India 305
NL - Olanda 269
CA - Canada 205
BD - Bangladesh 164
AR - Argentina 156
JP - Giappone 141
IQ - Iraq 119
MX - Messico 112
ID - Indonesia 111
TW - Taiwan 94
AT - Austria 86
ZA - Sudafrica 81
AE - Emirati Arabi Uniti 77
ES - Italia 73
EC - Ecuador 71
PK - Pakistan 69
CH - Svizzera 66
CO - Colombia 57
BE - Belgio 55
PH - Filippine 51
MA - Marocco 45
LT - Lituania 44
SA - Arabia Saudita 44
VE - Venezuela 42
CL - Cile 39
DZ - Algeria 34
JO - Giordania 34
UZ - Uzbekistan 33
EG - Egitto 32
MY - Malesia 32
NP - Nepal 31
PY - Paraguay 31
TN - Tunisia 29
RO - Romania 28
AU - Australia 27
GR - Grecia 25
KE - Kenya 24
PT - Portogallo 23
TH - Thailandia 23
UY - Uruguay 21
PE - Perù 20
NO - Norvegia 17
IR - Iran 16
OM - Oman 15
BO - Bolivia 14
CZ - Repubblica Ceca 14
DK - Danimarca 14
KZ - Kazakistan 13
A2 - ???statistics.table.value.countryCode.A2??? 12
IL - Israele 12
RS - Serbia 12
AL - Albania 11
JM - Giamaica 11
CR - Costa Rica 10
DO - Repubblica Dominicana 10
LB - Libano 10
AZ - Azerbaigian 9
BY - Bielorussia 9
CI - Costa d'Avorio 9
PA - Panama 9
SK - Slovacchia (Repubblica Slovacca) 9
BH - Bahrain 8
ET - Etiopia 8
EU - Europa 8
MD - Moldavia 8
QA - Qatar 8
CY - Cipro 7
HN - Honduras 7
HR - Croazia 7
MK - Macedonia 7
XK - ???statistics.table.value.countryCode.XK??? 7
GE - Georgia 6
HU - Ungheria 6
KG - Kirghizistan 6
NZ - Nuova Zelanda 6
PR - Porto Rico 6
SN - Senegal 6
GT - Guatemala 5
LV - Lettonia 5
NG - Nigeria 5
PS - Palestinian Territory 5
Totale 80.554
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Città #
Fairfield 6.416
Ashburn 4.136
Santa Clara 3.839
Singapore 3.834
Hong Kong 3.401
Southend 3.389
Woodbridge 2.754
Seattle 2.434
Houston 2.284
Dearborn 2.112
Chandler 2.044
Cambridge 2.029
Wilmington 1.940
Jacksonville 1.846
Warsaw 1.332
San Jose 1.122
London 1.099
Hefei 940
Ann Arbor 901
Beijing 737
Izmir 670
Ho Chi Minh City 620
The Dalles 600
Chicago 596
Seoul 541
Hanoi 526
Nyköping 516
Los Angeles 492
San Diego 474
Princeton 432
Sofia 431
Eugene 417
Council Bluffs 407
Lauterbourg 352
Helsinki 335
Dublin 321
New York 292
Modena 276
Moscow 231
Washington 220
Salt Lake City 208
Buffalo 199
São Paulo 155
Redondo Beach 148
Amsterdam 145
Shanghai 134
Dallas 131
Frankfurt am Main 127
Bremen 122
Da Nang 114
Tampa 113
Milan 106
Falls Church 104
Bologna 102
Nanjing 98
Tokyo 90
Elk Grove Village 84
Norwalk 79
Atlanta 78
Guangzhou 76
Rio de Janeiro 73
Haiphong 71
Boardman 65
Brooklyn 65
Kunming 64
Jakarta 63
San Francisco 59
Brantford 54
Orem 52
Phoenix 52
Kent 49
Reggio Emilia 49
Taipei 48
Nuremberg 47
Zurich 47
Jinan 46
Miami 45
Toronto 44
Chennai 43
Kilburn 43
Udine 43
Belo Horizonte 41
Columbus 41
Redwood City 40
Baghdad 39
Changsha 34
Denver 34
Munich 34
Sterling 34
Boston 32
Hải Dương 32
Montreal 32
Paris 32
Biên Hòa 31
Vienna 31
Amman 30
Chiswick 30
Dulles 30
Tashkent 30
Detroit 29
Totale 61.509
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 581
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 462
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects 454
A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 437
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 405
A CMOS Pixelated Nanocapacitor Biosensor Platform for High-Frequency Impedance Spectroscopy and Imaging 363
Role of Different Receptor-Surface Binding Modes in the Morphological and Electrochemical Properties of Peptide-Nucleic-Acid-Based Sensing Platforms 349
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 338
ENBIOS-1D Lab 322
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 317
ENBIOS-2D Lab 304
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 300
Impact Ionization and Photon Emission in MOS Capacitors and FETs 298
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays 296
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 291
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 289
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections 289
A design methodology for MOS Current-Mode Logic Frequency Dividers 289
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 288
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 284
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 277
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 277
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 275
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 275
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 270
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 267
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 266
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 265
Well-tempered MOSFETs: 1D versus 2D quantum analysis 264
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 263
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 261
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 261
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 260
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 260
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 255
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 255
Relationship between capacitance and conductance in MOS capacitors 255
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 252
Device simulation for decananometer MOSFETs 252
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 251
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices 250
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 249
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 248
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 245
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 240
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 239
A better understanding of the low-field mobility in Graphene Nano-ribbons 239
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 238
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors 236
Impact of carrier heating on backscattering in inversion layers 233
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 231
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 229
Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements 229
A novel method to determine the Source and Drain resistances of individual MOSFETs 228
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 227
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 227
Calibration of High-Frequency Impedance Spectroscopy Measurements with Nanocapacitor Arrays 227
Tunneling path impact on semi-classical numerical simulations of TFET devices 226
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 226
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices 226
Full-band monte carlo simulations of GaAs p-i-n avalanche PhotoDiodes: What are the limits of nonlocal impact ionization models? 226
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 225
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 224
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 224
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 224
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 224
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 222
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 222
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 221
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 221
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 221
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 221
Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET 220
Morphological and electrochemical properties of different PNA-based sensing platforms – Impact of the receptor-surface binding modes 220
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model 219
On the design of LDMOS finFETs in advanced technology nodes 218
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 218
Effects of electrical stress and ionizing radiation on Si-based TFETs 218
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 218
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 218
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 217
On the electron mobility enhancement in biaxially strained Si MOSFETs 217
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 216
Experimental Demonstration of Improved Analog Device Performance in GAA-NW-TFETs 215
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 215
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices 214
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain 213
Tunnelling Injection in Thin Oxide MOS Capacitors 213
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 212
On the experimental determination of channel back-scattering in nanoMOSFETs 212
Long term charge retention dynamics of SONOS cells 212
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 212
Graphene Base Transistors with optimized emitter and dielectrics 211
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 211
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 210
Derivation and Numerical Verification of a Compact Analytical Model for the AC Admittance Response of Nanoelectrodes, Suitable for the Analysis and Optimization of Impedance Biosensors 210
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 210
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 210
Latch-up in CMOS circuits: a review 210
General model for multiple surface reactions in ion-sensitive FETs 210
Totale 25.584
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Categoria #
all - tutte 333.667
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 333.667
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.651 0 0 0 0 0 0 0 0 0 1.602 504 545
2021/20226.802 290 1.024 904 178 123 324 401 341 777 570 1.263 607
2022/20235.178 635 409 307 403 797 767 70 530 791 90 206 173
2023/20244.699 192 303 188 520 1.322 674 404 482 58 80 204 272
2024/202513.904 609 139 136 930 2.752 1.960 316 683 1.534 941 1.547 2.357
2025/202620.248 970 577 1.757 1.606 3.124 3.927 3.742 1.091 1.875 1.579 0 0
Totale 81.325