ABRAMO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 2.002
EU - Europa 1.491
AS - Asia 1.194
SA - Sud America 103
AF - Africa 13
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 4.805
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Nazione #
US - Stati Uniti d'America 1.972
CN - Cina 528
DE - Germania 373
SG - Singapore 307
GB - Regno Unito 282
PL - Polonia 267
SE - Svezia 251
HK - Hong Kong 146
RU - Federazione Russa 117
BR - Brasile 83
VN - Vietnam 74
KR - Corea 72
UA - Ucraina 56
IT - Italia 35
TR - Turchia 31
LT - Lituania 21
BG - Bulgaria 20
CA - Canada 18
IE - Irlanda 18
NL - Olanda 18
FI - Finlandia 13
MX - Messico 11
AR - Argentina 10
BD - Bangladesh 10
ID - Indonesia 6
ZA - Sudafrica 6
ES - Italia 4
FR - Francia 4
IQ - Iraq 4
JP - Giappone 4
EG - Egitto 3
PK - Pakistan 3
VE - Venezuela 3
AT - Austria 2
BE - Belgio 2
BO - Bolivia 2
CL - Cile 2
GR - Grecia 2
IN - India 2
MA - Marocco 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
AU - Australia 1
AZ - Azerbaigian 1
BY - Bielorussia 1
CO - Colombia 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
EC - Ecuador 1
HU - Ungheria 1
KE - Kenya 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
ML - Mali 1
NO - Norvegia 1
OM - Oman 1
PE - Perù 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 4.805
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Città #
Hefei 284
Warsaw 267
Santa Clara 240
Fairfield 206
Southend 203
Singapore 182
Ashburn 181
Hong Kong 146
Chandler 137
Nyköping 115
Dearborn 104
Woodbridge 102
Jacksonville 89
Beijing 86
Houston 83
Seattle 77
Seoul 72
Cambridge 64
Wilmington 55
London 47
Eugene 36
Ann Arbor 30
Izmir 29
Los Angeles 29
The Dalles 28
Ho Chi Minh City 25
Columbus 23
San Diego 23
Princeton 21
Kent 20
Sofia 20
Chicago 19
Hanoi 19
Amsterdam 18
Dublin 18
New York 17
Moscow 14
Dallas 13
Bremen 12
Helsinki 11
Montreal 10
Brooklyn 9
Buffalo 9
Redondo Beach 8
Salt Lake City 8
Grafing 7
Denver 6
Nanjing 6
São Paulo 6
Atlanta 5
Haiphong 5
Querétaro 5
San Michele All'adige 5
Shanghai 5
Council Bluffs 4
Da Nang 4
Hangzhou 4
Johannesburg 4
Mexico City 4
Phoenix 4
Tampa 4
Tokyo 4
Boston 3
Norfolk 3
Nuremberg 3
Philadelphia 3
Poplar 3
Rio de Janeiro 3
Sterling 3
Vancouver 3
Biên Hòa 2
Boardman 2
Brussels 2
Cairo 2
Cangzhou 2
Carapicuíba 2
Changsha 2
Curitiba 2
Detroit 2
Dhaka 2
Elk Grove Village 2
Esmeraldas 2
Foz do Iguaçu 2
Frankfurt am Main 2
Guangzhou 2
Hackensack 2
Hounslow 2
Karachi 2
Kilburn 2
Moses Lake 2
Munich 2
Orem 2
Porto Alegre 2
Pottstown 2
Prescot 2
Quận Một 2
San Francisco 2
Santiago 2
Stockholm 2
Tolmezzo 2
Totale 3.375
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 545
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 291
Impact Ionization and Photon Emission in MOS Capacitors and FETs 274
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 266
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 262
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 252
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 246
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 243
Well-tempered MOSFETs: 1D versus 2D quantum analysis 238
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 237
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 230
Device simulation for decananometer MOSFETs 229
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 199
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 193
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 185
Tunnelling Injection in Thin Oxide MOS Capacitors 184
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 183
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 177
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations 154
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 133
Investigation on convergence and stability of self-consistent Monte Carlo device simulations 106
Totale 4.827
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Categoria #
all - tutte 16.880
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 16.880
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021200 0 0 0 0 0 21 29 63 7 60 8 12
2021/2022355 13 47 18 19 5 44 22 6 43 23 90 25
2022/2023401 77 75 24 36 50 38 18 17 47 6 8 5
2023/2024200 7 8 4 15 52 22 17 19 0 2 44 10
2024/2025968 23 6 21 63 157 113 33 47 109 21 186 189
2025/20261.325 146 118 197 193 320 351 0 0 0 0 0 0
Totale 4.827