ABRAMO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 2.176
EU - Europa 1.541
AS - Asia 1.468
SA - Sud America 135
AF - Africa 23
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 5.345
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Nazione #
US - Stati Uniti d'America 2.134
CN - Cina 537
DE - Germania 373
SG - Singapore 372
GB - Regno Unito 286
PL - Polonia 267
SE - Svezia 252
HK - Hong Kong 204
VN - Vietnam 148
RU - Federazione Russa 117
BR - Brasile 104
KR - Corea 87
UA - Ucraina 58
IT - Italia 40
TR - Turchia 35
CA - Canada 24
FI - Finlandia 23
NL - Olanda 22
BG - Bulgaria 21
FR - Francia 21
LT - Lituania 21
IE - Irlanda 18
BD - Bangladesh 14
IN - India 14
MX - Messico 13
AR - Argentina 12
ID - Indonesia 7
IQ - Iraq 7
ES - Italia 6
PH - Filippine 6
ZA - Sudafrica 6
JP - Giappone 5
PK - Pakistan 5
CL - Cile 4
CO - Colombia 4
KE - Kenya 4
MA - Marocco 4
AE - Emirati Arabi Uniti 3
BO - Bolivia 3
EG - Egitto 3
JO - Giordania 3
OM - Oman 3
VE - Venezuela 3
AT - Austria 2
BE - Belgio 2
BY - Bielorussia 2
EC - Ecuador 2
GR - Grecia 2
MY - Malesia 2
PY - Paraguay 2
SA - Arabia Saudita 2
SY - Repubblica araba siriana 2
TH - Thailandia 2
UZ - Uzbekistan 2
AL - Albania 1
AM - Armenia 1
AU - Australia 1
AZ - Azerbaigian 1
CG - Congo 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
CY - Cipro 1
CZ - Repubblica Ceca 1
HN - Honduras 1
HU - Ungheria 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
LY - Libia 1
ML - Mali 1
MM - Myanmar 1
NI - Nicaragua 1
NO - Norvegia 1
NP - Nepal 1
PA - Panama 1
PE - Perù 1
PT - Portogallo 1
QA - Qatar 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
XK - ???statistics.table.value.countryCode.XK??? 1
ZM - Zambia 1
Totale 5.345
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Città #
Hefei 284
Warsaw 267
Santa Clara 243
Ashburn 211
Fairfield 206
Singapore 206
Southend 203
Hong Kong 200
Chandler 137
Nyköping 115
Dearborn 104
Woodbridge 102
Beijing 90
Jacksonville 89
Seoul 87
Houston 83
San Jose 83
Seattle 77
Cambridge 64
Wilmington 55
London 47
The Dalles 46
Ho Chi Minh City 45
Hanoi 40
Los Angeles 40
Eugene 36
Ann Arbor 30
Izmir 29
Columbus 23
San Diego 23
Helsinki 21
Princeton 21
Amsterdam 20
Kent 20
Sofia 20
Chicago 19
Dublin 18
New York 18
Lauterbourg 15
Moscow 14
Dallas 13
Bremen 12
Montreal 11
Da Nang 10
São Paulo 10
Brooklyn 9
Buffalo 9
Council Bluffs 9
Redondo Beach 8
Salt Lake City 8
Grafing 7
Haiphong 7
Denver 6
Nanjing 6
Orem 6
Atlanta 5
Mexico City 5
Querétaro 5
San Michele All'adige 5
Shanghai 5
Tokyo 5
Chennai 4
Curitiba 4
Hangzhou 4
Johannesburg 4
Karachi 4
Nairobi 4
Phoenix 4
Rio de Janeiro 4
Tampa 4
Vancouver 4
Amman 3
Biên Hòa 3
Boston 3
Brantford 3
Istanbul 3
Manchester 3
Norfolk 3
Nuremberg 3
Philadelphia 3
Poplar 3
Santiago 3
Sterling 3
Boardman 2
Brussels 2
Cairo 2
Cangzhou 2
Carapicuíba 2
Changsha 2
Charlotte 2
Detroit 2
Dhaka 2
Dubai 2
Elk Grove Village 2
Enschede 2
Esmeraldas 2
Foz do Iguaçu 2
Frankfurt am Main 2
Guangzhou 2
Hackensack 2
Totale 3.722
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 582
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 317
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 301
Impact Ionization and Photon Emission in MOS Capacitors and FETs 299
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 291
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 278
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 270
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 266
Well-tempered MOSFETs: 1D versus 2D quantum analysis 265
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 265
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 260
Device simulation for decananometer MOSFETs 253
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 224
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 221
Tunnelling Injection in Thin Oxide MOS Capacitors 214
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 210
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 203
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 194
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations 167
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 158
Investigation on convergence and stability of self-consistent Monte Carlo device simulations 129
Totale 5.367
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Categoria #
all - tutte 17.942
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 17.942
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202180 0 0 0 0 0 0 0 0 0 60 8 12
2021/2022355 13 47 18 19 5 44 22 6 43 23 90 25
2022/2023401 77 75 24 36 50 38 18 17 47 6 8 5
2023/2024200 7 8 4 15 52 22 17 19 0 2 44 10
2024/2025968 23 6 21 63 157 113 33 47 109 21 186 189
2025/20261.865 146 118 197 193 320 364 273 46 129 79 0 0
Totale 5.367