ZAGNI, NICOLO'
 Distribuzione geografica
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Continente #
NA - Nord America 6.114
AS - Asia 4.262
EU - Europa 2.810
SA - Sud America 474
AF - Africa 64
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 6
Totale 13.738
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Nazione #
US - Stati Uniti d'America 5.991
SG - Singapore 1.304
CN - Cina 1.231
IT - Italia 909
HK - Hong Kong 547
GB - Regno Unito 545
BR - Brasile 368
SE - Svezia 316
VN - Vietnam 307
KR - Corea 292
DE - Germania 277
FR - Francia 173
IN - India 125
RU - Federazione Russa 119
FI - Finlandia 104
TW - Taiwan 95
NL - Olanda 72
JP - Giappone 71
CA - Canada 66
ID - Indonesia 66
BG - Bulgaria 45
UA - Ucraina 39
MX - Messico 38
BD - Bangladesh 37
TR - Turchia 37
IE - Irlanda 34
AR - Argentina 32
IQ - Iraq 28
ES - Italia 27
PL - Polonia 24
AT - Austria 21
CO - Colombia 19
ZA - Sudafrica 17
EC - Ecuador 15
LT - Lituania 15
PT - Portogallo 15
AE - Emirati Arabi Uniti 14
BE - Belgio 14
UZ - Uzbekistan 14
GR - Grecia 13
CH - Svizzera 12
SA - Arabia Saudita 12
MA - Marocco 11
PK - Pakistan 10
VE - Venezuela 9
CL - Cile 8
DZ - Algeria 8
JO - Giordania 8
MY - Malesia 8
PE - Perù 8
TH - Thailandia 8
AU - Australia 7
PH - Filippine 7
DK - Danimarca 6
NP - Nepal 6
RO - Romania 6
BO - Bolivia 5
DO - Repubblica Dominicana 5
PY - Paraguay 5
AZ - Azerbaigian 4
CR - Costa Rica 4
EG - Egitto 4
KZ - Kazakistan 4
MD - Moldavia 4
SN - Senegal 4
TN - Tunisia 4
UY - Uruguay 4
AL - Albania 3
BH - Bahrain 3
ET - Etiopia 3
EU - Europa 3
IR - Iran 3
JM - Giamaica 3
KE - Kenya 3
KW - Kuwait 3
LB - Libano 3
LU - Lussemburgo 3
MN - Mongolia 3
PS - Palestinian Territory 3
RS - Serbia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
BY - Bielorussia 2
CZ - Repubblica Ceca 2
HN - Honduras 2
MK - Macedonia 2
OM - Oman 2
SV - El Salvador 2
TJ - Tagikistan 2
BB - Barbados 1
BN - Brunei Darussalam 1
CG - Congo 1
CI - Costa d'Avorio 1
EE - Estonia 1
GA - Gabon 1
GE - Georgia 1
GH - Ghana 1
GY - Guiana 1
HR - Croazia 1
HU - Ungheria 1
Totale 13.725
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Città #
Singapore 871
Santa Clara 672
Fairfield 663
Ashburn 598
Hong Kong 509
Hefei 438
Chandler 343
Houston 277
Woodbridge 276
San Jose 269
Southend 263
Seattle 239
Cambridge 215
Nyköping 210
London 178
Wilmington 178
Beijing 175
Chicago 175
Seoul 165
Modena 157
Milan 131
Los Angeles 104
Ho Chi Minh City 99
Ann Arbor 95
San Diego 90
The Dalles 89
Helsinki 84
Council Bluffs 74
Hanoi 71
New York 66
Dearborn 65
Boardman 55
Jakarta 49
Jacksonville 48
Taipei 47
Princeton 43
Bologna 41
Buffalo 41
Redwood City 41
Sofia 40
Moscow 38
Dallas 37
Frankfurt am Main 37
Padova 37
Tokyo 37
Grafing 36
Kent 35
Bremen 34
São Paulo 34
Guangzhou 33
Lauterbourg 32
East Aurora 30
Shanghai 29
Reggio Emilia 26
Munich 25
Falkenstein 24
Dublin 23
Parma 22
Salt Lake City 22
Izmir 21
Hsinchu 20
Rome 20
Chennai 19
Brooklyn 18
Eugene 18
Warsaw 18
Amsterdam 17
Denver 17
Hangzhou 17
Orem 17
Redondo Beach 17
Da Nang 16
Dresden 16
Montreal 16
Bengaluru 15
Formigine 15
Lappeenranta 15
Toronto 15
Baghdad 14
Columbus 14
Manchester 14
Paris 14
Cheonan 13
Mexico City 13
Nuremberg 13
Rio de Janeiro 13
Shenzhen 13
Shijiazhuang 13
Tashkent 13
Xi'an 13
Gangnam-gu 12
Mapo-gu 12
Wallingford 12
Elk Grove Village 11
Reggio Nell'emilia 11
Brantford 10
Des Moines 10
Nanjing 10
Atlanta 9
Dhaka 9
Totale 9.428
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Nome #
GaN-based power devices: Physics, reliability, and perspectives 559
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 475
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 397
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 388
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 357
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 352
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 342
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 320
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 315
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 303
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 298
A memory window expression to evaluate the endurance of ferroelectric FETs 294
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 293
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 292
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective 287
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 287
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 286
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 284
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 283
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 283
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 282
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 278
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 269
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 266
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 264
Insights into the off-state breakdown mechanisms in power GaN HEMTs 252
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 252
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 246
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 232
Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors 230
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity 225
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 221
Metodi di Simulazione e Modellizazione per Predirre le Performance e l'Affidabilità dell'Elettronica del XXI Secolo 218
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry 208
Gate-Bias Induced RON Instability in p-GaN Power HEMTs 183
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 183
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 182
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 176
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors 164
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors 164
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 160
Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective 157
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 152
Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm AlGaN/GaN HEMTs for Power RF Applications 147
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 139
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability 138
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 138
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 136
Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs 135
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications 135
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors – An Analytical Approach 134
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs 129
Negative Capacitors and Applications 124
Symmetrical VTH/RONDrifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs 122
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 117
From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited) 113
Physical Modelling of Charge Trapping Effects 102
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 101
On-Wafer RONDegradation Analysis of 100 v p-GaN HEMTs Emulating Low-and High-Side Operation in Half Bridge Circuits 100
Physics of Phase Transition Switches 83
Analysis of Dynamic-Ron and VTH shift in on-wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 78
Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation 44
Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC 34
Effect of 2DEG density and Drain/Source Field Plate design on dynamic-RON of 650 V AlGaN/GaN HEMTs 15
Preliminary Evaluation of PBTI and Back-Effect interplay in 100 V p-GaN gate AlGaN/GaN HEMTs 11
Totale 13.934
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Categoria #
all - tutte 54.398
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 54.398
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021585 0 0 0 0 0 0 0 0 0 187 131 267
2021/20221.261 110 100 58 41 113 207 55 37 114 88 251 87
2022/20231.140 126 136 78 81 144 133 45 133 129 15 75 45
2023/2024919 63 47 52 101 160 71 60 85 32 55 31 162
2024/20253.034 180 44 36 207 472 423 213 205 264 144 452 394
2025/20264.810 426 357 343 513 750 395 615 281 585 545 0 0
Totale 13.934