CIONI, MARCELLO
 Distribuzione geografica
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Continente #
AS - Asia 1.593
NA - Nord America 1.578
EU - Europa 1.092
SA - Sud America 201
AF - Africa 26
OC - Oceania 2
Continente sconosciuto - Info sul continente non disponibili 1
Totale 4.493
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Nazione #
US - Stati Uniti d'America 1.539
IT - Italia 513
SG - Singapore 492
CN - Cina 440
HK - Hong Kong 219
BR - Brasile 152
VN - Vietnam 134
GB - Regno Unito 127
DE - Germania 80
KR - Corea 80
FR - Francia 75
SE - Svezia 65
IN - India 57
RU - Federazione Russa 52
FI - Finlandia 43
TW - Taiwan 40
NL - Olanda 35
JP - Giappone 23
BD - Bangladesh 21
AR - Argentina 18
CA - Canada 18
ID - Indonesia 17
PL - Polonia 14
MX - Messico 13
IE - Irlanda 12
BG - Bulgaria 11
TR - Turchia 11
EC - Ecuador 10
UA - Ucraina 10
ZA - Sudafrica 10
ES - Italia 9
IQ - Iraq 9
CO - Colombia 7
LT - Lituania 7
UZ - Uzbekistan 7
AT - Austria 6
AE - Emirati Arabi Uniti 5
CL - Cile 5
DK - Danimarca 5
PH - Filippine 5
RO - Romania 5
SA - Arabia Saudita 5
BE - Belgio 4
CR - Costa Rica 4
JO - Giordania 4
KE - Kenya 4
PK - Pakistan 4
CH - Svizzera 3
GR - Grecia 3
KW - Kuwait 3
LB - Libano 3
MY - Malesia 3
PE - Perù 3
BY - Bielorussia 2
DZ - Algeria 2
EG - Egitto 2
JM - Giamaica 2
MD - Moldavia 2
MK - Macedonia 2
NP - Nepal 2
PY - Paraguay 2
TH - Thailandia 2
TJ - Tagikistan 2
UY - Uruguay 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
AO - Angola 1
AU - Australia 1
AZ - Azerbaigian 1
BH - Bahrain 1
BO - Bolivia 1
CG - Congo 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
ET - Etiopia 1
HU - Ungheria 1
IL - Israele 1
LK - Sri Lanka 1
LV - Lettonia 1
MA - Marocco 1
MN - Mongolia 1
MW - Malawi 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PT - Portogallo 1
RS - Serbia 1
SD - Sudan 1
SK - Slovacchia (Repubblica Slovacca) 1
SV - El Salvador 1
TZ - Tanzania 1
VE - Venezuela 1
Totale 4.493
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Città #
Singapore 303
Santa Clara 235
Hong Kong 202
Ashburn 173
Hefei 166
Chandler 119
Fairfield 95
Milan 94
San Jose 77
Seoul 62
Beijing 59
Nyköping 58
London 57
Modena 57
Chicago 50
Los Angeles 48
Cambridge 43
Helsinki 36
Ho Chi Minh City 36
Hanoi 33
Padova 30
Seattle 24
Woodbridge 24
The Dalles 23
Boardman 22
Wilmington 22
Council Bluffs 21
Houston 21
Kent 21
San Diego 21
New York 20
Taipei 18
Moscow 17
Reggio Emilia 17
Ann Arbor 16
Bologna 16
Buffalo 14
Munich 14
Princeton 13
Rome 13
Bremen 12
Dallas 11
Frankfurt am Main 11
Guangzhou 11
Orem 11
São Paulo 11
Turin 11
Wallingford 11
Brooklyn 10
Denver 10
Dublin 10
Hsinchu 10
Jakarta 10
Sofia 10
Warsaw 10
Chennai 9
Formigine 9
Paris 9
Tokyo 9
Warrington 9
Amsterdam 8
Bengaluru 8
Grafing 8
Lauterbourg 8
Shanghai 8
Assèmini 7
Catania 7
Da Nang 7
Haiphong 7
Manchester 7
Montreal 7
Padua 7
Piacenza 7
Ravenna 7
Southend 7
Stockholm 7
Tashkent 7
Compiègne 6
Daegu 6
Duncan 6
Marseille 6
Palermo 6
Phoenix 6
Reggio Nell'emilia 6
Salt Lake City 6
Brantford 5
Columbus 5
Delhi 5
Elk Grove Village 5
Mumbai 5
Parma 5
Redondo Beach 5
Vienna 5
Washington 5
Amman 4
Arsikere 4
Bari 4
Cagliari 4
Dhaka 4
Istanbul 4
Totale 2.835
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Nome #
GaN-based power devices: Physics, reliability, and perspectives 559
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 286
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 284
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 283
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 283
Caratterizzazione di Dispositivi di Potenza a Semiconduttore con Largo Band-Gap 266
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 266
Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs 221
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 221
Gate-Bias Induced RON Instability in p-GaN Power HEMTs 183
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 183
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 182
Identification of Interface States responsible for VTHHysteresis in packaged SiC MOSFETs 176
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 176
Impact of Soft- and Hard-Switching transitions on VTH and RON Drifts in packaged SiC MOSFETs 161
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability 138
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 138
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 117
Physical Modelling of Charge Trapping Effects 102
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 101
On-Wafer RONDegradation Analysis of 100 v p-GaN HEMTs Emulating Low-and High-Side Operation in Half Bridge Circuits 100
Analysis of Dynamic-Ron and VTH shift in on-wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 78
Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation 44
Totale 4.548
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Categoria #
all - tutte 18.620
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 18.620
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021150 0 0 0 0 0 0 0 0 0 14 59 77
2021/2022376 25 18 26 5 33 38 33 11 38 28 78 43
2022/2023438 38 36 36 31 41 42 12 62 65 11 40 24
2023/2024399 32 27 24 43 55 21 40 36 21 31 16 53
2024/20251.150 57 20 14 76 175 139 46 75 141 58 182 167
2025/20261.970 168 135 146 216 341 116 269 138 238 203 0 0
Totale 4.548