CIONI, MARCELLO
 Distribuzione geografica
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Continente #
NA - Nord America 1.808
AS - Asia 1.681
EU - Europa 1.145
SA - Sud America 202
Continente sconosciuto - Info sul continente non disponibili 56
AF - Africa 27
OC - Oceania 2
Totale 4.921
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Nazione #
US - Stati Uniti d'America 1.746
IT - Italia 562
SG - Singapore 496
CN - Cina 460
HK - Hong Kong 222
BR - Brasile 153
VN - Vietnam 135
GB - Regno Unito 128
DE - Germania 81
KR - Corea 80
FR - Francia 76
BD - Bangladesh 75
SE - Svezia 65
IN - India 58
RU - Federazione Russa 52
FI - Finlandia 43
TW - Taiwan 41
NL - Olanda 35
CA - Canada 33
JP - Giappone 24
AR - Argentina 18
ID - Indonesia 17
PL - Polonia 14
MX - Messico 13
IE - Irlanda 12
BG - Bulgaria 11
TR - Turchia 11
ZA - Sudafrica 11
EC - Ecuador 10
UA - Ucraina 10
ES - Italia 9
IQ - Iraq 9
CO - Colombia 7
CR - Costa Rica 7
LT - Lituania 7
UZ - Uzbekistan 7
AT - Austria 6
DK - Danimarca 6
AE - Emirati Arabi Uniti 5
CL - Cile 5
MY - Malesia 5
PH - Filippine 5
RO - Romania 5
SA - Arabia Saudita 5
BE - Belgio 4
JO - Giordania 4
KE - Kenya 4
PK - Pakistan 4
CH - Svizzera 3
GR - Grecia 3
JM - Giamaica 3
KW - Kuwait 3
LB - Libano 3
PE - Perù 3
SV - El Salvador 3
TH - Thailandia 3
BY - Bielorussia 2
DZ - Algeria 2
EG - Egitto 2
MD - Moldavia 2
MK - Macedonia 2
NP - Nepal 2
PY - Paraguay 2
TJ - Tagikistan 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
AO - Angola 1
AU - Australia 1
AZ - Azerbaigian 1
BH - Bahrain 1
BO - Bolivia 1
CG - Congo 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
ET - Etiopia 1
HU - Ungheria 1
IL - Israele 1
LK - Sri Lanka 1
LV - Lettonia 1
MA - Marocco 1
MN - Mongolia 1
MW - Malawi 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PT - Portogallo 1
RS - Serbia 1
SD - Sudan 1
SK - Slovacchia (Repubblica Slovacca) 1
TZ - Tanzania 1
VE - Venezuela 1
Totale 4.866
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Città #
Singapore 303
Santa Clara 248
Ashburn 209
Hong Kong 205
Hefei 166
San Jose 132
Chandler 119
Milan 101
Fairfield 95
Los Angeles 63
Beijing 62
Seoul 62
Modena 58
Nyköping 58
London 57
Chicago 50
Cambridge 43
Council Bluffs 36
Helsinki 36
Ho Chi Minh City 36
Hanoi 33
New York 30
Padova 30
Boardman 25
Seattle 25
Woodbridge 24
The Dalles 23
Wilmington 23
Kent 22
Houston 21
San Diego 21
Buffalo 20
Rome 19
Taipei 18
Bologna 17
Moscow 17
Reggio Emilia 17
Ann Arbor 16
Dallas 14
Munich 14
Princeton 13
Bremen 12
Brooklyn 11
Denver 11
Frankfurt am Main 11
Guangzhou 11
Orem 11
São Paulo 11
Turin 11
Wallingford 11
Dublin 10
Hsinchu 10
Jakarta 10
Sofia 10
Tokyo 10
Warsaw 10
Chennai 9
Formigine 9
Paris 9
Ravenna 9
Shanghai 9
Warrington 9
Amsterdam 8
Bengaluru 8
Grafing 8
Lauterbourg 8
Montreal 8
Assèmini 7
Catania 7
Da Nang 7
Haiphong 7
Manchester 7
Marseille 7
Padua 7
Piacenza 7
Southend 7
Stockholm 7
Tashkent 7
Compiègne 6
Daegu 6
Duncan 6
Palermo 6
Parma 6
Phoenix 6
Reggio Nell'emilia 6
Salt Lake City 6
Washington 6
Brantford 5
Cagliari 5
Columbus 5
Delhi 5
Elk Grove Village 5
Johannesburg 5
Mumbai 5
Redondo Beach 5
Vienna 5
Amman 4
Arsikere 4
Bari 4
Dhaka 4
Totale 3.027
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Nome #
GaN-based power devices: Physics, reliability, and perspectives 590
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 315
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 313
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 311
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 308
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 293
Caratterizzazione di Dispositivi di Potenza a Semiconduttore con Largo Band-Gap 274
Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs 234
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 230
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 193
Identification of Interface States responsible for VTHHysteresis in packaged SiC MOSFETs 191
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 186
Gate-Bias Induced RON Instability in p-GaN Power HEMTs 184
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 181
Impact of Soft- and Hard-Switching transitions on VTH and RON Drifts in packaged SiC MOSFETs 165
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 164
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability 144
Analysis of Dynamic-Ron and VTH shift in on-wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 132
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 131
Physical Modelling of Charge Trapping Effects 116
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 108
On-Wafer RONDegradation Analysis of 100 v p-GaN HEMTs Emulating Low-and High-Side Operation in Half Bridge Circuits 107
Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation 51
Totale 4.921
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Categoria #
all - tutte 20.473
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 20.473
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022351 0 18 26 5 33 38 33 11 38 28 78 43
2022/2023438 38 36 36 31 41 42 12 62 65 11 40 24
2023/2024399 32 27 24 43 55 21 40 36 21 31 16 53
2024/20251.150 57 20 14 76 175 139 46 75 141 58 182 167
2025/20262.262 168 135 146 216 341 116 269 138 238 210 158 127
2026/202781 72 9 0 0 0 0 0 0 0 0 0 0
Totale 4.921