ASANOVSKI, RUBEN
 Distribuzione geografica
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Continente #
NA - Nord America 1.547
EU - Europa 1.228
AS - Asia 1.139
SA - Sud America 108
Continente sconosciuto - Info sul continente non disponibili 29
AF - Africa 15
OC - Oceania 1
Totale 4.067
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Nazione #
US - Stati Uniti d'America 1.491
CN - Cina 396
IT - Italia 334
SG - Singapore 285
IE - Irlanda 266
PL - Polonia 221
HK - Hong Kong 120
VN - Vietnam 106
SE - Svezia 79
BR - Brasile 76
GB - Regno Unito 68
KR - Corea 65
FR - Francia 56
RU - Federazione Russa 47
TW - Taiwan 44
DE - Germania 36
IN - India 31
NL - Olanda 24
FI - Finlandia 22
CA - Canada 20
BE - Belgio 19
AR - Argentina 18
AT - Austria 15
BD - Bangladesh 15
JP - Giappone 14
MX - Messico 10
CH - Svizzera 9
IQ - Iraq 9
ID - Indonesia 8
PK - Pakistan 7
HN - Honduras 6
PH - Filippine 6
SA - Arabia Saudita 6
AE - Emirati Arabi Uniti 5
CR - Costa Rica 4
DZ - Algeria 4
EC - Ecuador 4
ES - Italia 4
LT - Lituania 4
MK - Macedonia 4
MY - Malesia 4
SV - El Salvador 4
BG - Bulgaria 3
CW - ???statistics.table.value.countryCode.CW??? 3
EE - Estonia 3
TT - Trinidad e Tobago 3
VE - Venezuela 3
ZA - Sudafrica 3
CO - Colombia 2
GE - Georgia 2
GT - Guatemala 2
JO - Giordania 2
LB - Libano 2
MA - Marocco 2
NI - Nicaragua 2
NO - Norvegia 2
PT - Portogallo 2
RS - Serbia 2
SC - Seychelles 2
SN - Senegal 2
TH - Thailandia 2
TR - Turchia 2
UA - Ucraina 2
UY - Uruguay 2
AL - Albania 1
AU - Australia 1
BB - Barbados 1
BZ - Belize 1
CL - Cile 1
DK - Danimarca 1
DO - Repubblica Dominicana 1
GP - Guadalupe 1
HU - Ungheria 1
IL - Israele 1
IS - Islanda 1
KW - Kuwait 1
KZ - Kazakistan 1
NG - Nigeria 1
NP - Nepal 1
OM - Oman 1
PE - Perù 1
PR - Porto Rico 1
PS - Palestinian Territory 1
PY - Paraguay 1
RO - Romania 1
SD - Sudan 1
SK - Slovacchia (Repubblica Slovacca) 1
SY - Repubblica araba siriana 1
UZ - Uzbekistan 1
Totale 4.041
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Città #
Dublin 266
Warsaw 215
San Jose 211
Ashburn 192
Santa Clara 192
Hefei 184
Singapore 167
Hong Kong 114
Council Bluffs 96
Beijing 62
Seoul 56
Bologna 51
Los Angeles 47
Modena 43
London 41
Chandler 37
Ho Chi Minh City 37
Milan 33
Hanoi 29
Taipei 22
Chicago 20
Nyköping 16
Helsinki 15
Kent 13
Lauterbourg 13
New York 13
Paris 13
Fairfield 12
Brooklyn 11
Buffalo 11
Dallas 11
Houston 11
Phoenix 11
Seattle 11
Tokyo 11
Frankfurt am Main 10
Moscow 10
Reggio Emilia 10
Boardman 9
Hangzhou 9
North Charleston 9
Orem 9
Rome 9
Delft 8
Southend 8
The Dalles 8
Amsterdam 7
Leuven 7
New Taipei City 7
North Bergen 7
Roorkee 7
Saint Augustine 7
Washington 7
Wilmington 7
Jakarta 6
Salt Lake City 6
San Francisco 6
Shanghai 6
São Paulo 6
Atlanta 5
Da Nang 5
Dubai 5
Guangzhou 5
Indianapolis 5
Lappeenranta 5
Marseille 5
Porto Mantovano 5
Princeton 5
Tampa 5
Taranto 5
Toronto 5
Vienna 5
Bremen 4
Einsiedeln 4
Heverlee 4
Nuremberg 4
Padua 4
Ravenna 4
San José 4
San Pedro Sula 4
Udine 4
Xi'an 4
Ann Arbor 3
Baghdad 3
Biên Hòa 3
Calcinato 3
Cambridge 3
Campodarsego 3
Casalgrande 3
Chennai 3
Columbus 3
Curitiba 3
Denver 3
Didcot 3
Fortaleza 3
Ha Long 3
Kirkuk 3
Montale 3
Montreal 3
Mordano 3
Totale 2.631
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Nome #
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 458
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 409
Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes 350
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 303
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 280
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs 266
On the design of LDMOS finFETs in advanced technology nodes 257
Rumore dovuto a Trappole in Tecnologie MOSFET all'Avanguardia fino a Temperature Criogeniche 231
Assessment of Advanced Nanoscale Bulk FinFET's Self-Heating accounting for degraded thermal conductivity at the nanoscale 205
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise 180
Assessment of the Transient Self-Heating Effect and its Impact on the Performance of Watt-Level RF Power Amplifier in a FinFET Technology 177
Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques 167
Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis 162
Probing Band Tail States in MOSFETs at Cryogenic Temperatures through Noise Spectroscopy 152
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K 146
Impact of Gate Metal Work Function on 1/f Noise in RMG MOSFETs 124
On the Output Conductance Dispersion due to Traps and Self-Heating in Large Bulk, FDSOI and FinFET nMOS Devices 121
Distinct Signatures of Self-Heating and Trap Dynamics on the AC Y-Parameters of Advanced n-MOSFETs 79
Totale 4.067
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Categoria #
all - tutte 14.801
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.801
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202289 0 0 0 0 6 8 4 1 25 4 26 15
2022/2023185 13 15 6 10 13 19 7 16 22 4 9 51
2023/2024427 55 44 43 39 62 48 40 14 5 17 35 25
2024/2025853 29 10 22 56 132 138 70 50 98 28 109 111
2025/20261.608 115 110 170 172 174 275 177 55 119 112 84 45
2026/2027809 197 98 162 266 86 0 0 0 0 0 0 0
Totale 4.067