This paper explores the frequency dispersion of Y-parameters in advanced FDSOI MOSFETs and FinFETs, focusing on the primary causes of output conductance dispersion across varying gate voltages. Through a combination of experimental measurements and numerical simulations using physical TCAD, we identify distinct patterns that differentiate the effects of self-heating (SH) and trapping-detrapping (TD) mechanisms on device capacitances and conductances.By determining the conditions under which SH effects dominate over TD ones, and vice versa, our analysis provides valuable insights for technology optimization, circuit design, thermal resistance extraction using the AC output conductance method, estimation of the device temperature and more accurate device lifetime predictions under self-heating stress conditions.
Distinct Signatures of Self-Heating and Trap Dynamics on the AC Y-Parameters of Advanced n-MOSFETs / Tondelli, L.; Scholten, A. J.; Van Beurden, J.; Pijper, R. M. T.; Asanovski, R.; Dinh, T. V.; Selmi, L.. - (2025), pp. 01-05. ( IEEE International reliability Physics Symposium Monterey, USA 30.3 - 3.4 2025) [10.1109/IRPS48204.2025.10983442].
Distinct Signatures of Self-Heating and Trap Dynamics on the AC Y-Parameters of Advanced n-MOSFETs
Tondelli L.;Asanovski R.;Selmi L.
2025
Abstract
This paper explores the frequency dispersion of Y-parameters in advanced FDSOI MOSFETs and FinFETs, focusing on the primary causes of output conductance dispersion across varying gate voltages. Through a combination of experimental measurements and numerical simulations using physical TCAD, we identify distinct patterns that differentiate the effects of self-heating (SH) and trapping-detrapping (TD) mechanisms on device capacitances and conductances.By determining the conditions under which SH effects dominate over TD ones, and vice versa, our analysis provides valuable insights for technology optimization, circuit design, thermal resistance extraction using the AC output conductance method, estimation of the device temperature and more accurate device lifetime predictions under self-heating stress conditions.
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