In this brief, we investigate the correlation between dynamic-Q(OSS) and dynamic-R-ON of 650-V packaged AlGaN/GaN high-electron-mobility transistors (HEMTs). To this end, a novel measurement setup is proposed to evaluate the on-the-fly evolution of both parameters during conventional switch-mode operations. The measurements performed at V-DS= 200 V show that the dynamic-R-ON and dynamic-Q(OSS) present similar exponential transients and time constants, potentially explained by the ionization of C-related acceptors in the GaN buffer. The same activation energy (E-A) has been observed for both Q(OSS) and R-ON, suggesting that their drifts are related to the same physical mechanism. The characterization has also been performed at different V-DS levels, indicating that the observed correlation holds in the entire range up to 520 V.
On the Correlation Between Dynamic-QOSS and Dynamic-RON in GaN-Based HEMTs / Cioni, M.; Chini, A.; Cappellini, G.; Giorgino, G.; Moschetti, M.; Miccoli, C.; Wakrim, T.; Maria Lombardo, D.; Strano, S.; Cerantonio, V.; Eloisa Castagna, M.; Constant, A.; Iucolano, F.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 72:10(2025), pp. 5727-5731. [10.1109/TED.2025.3595562]
On the Correlation Between Dynamic-QOSS and Dynamic-RON in GaN-Based HEMTs
Chini A.;Giorgino G.;
2025
Abstract
In this brief, we investigate the correlation between dynamic-Q(OSS) and dynamic-R-ON of 650-V packaged AlGaN/GaN high-electron-mobility transistors (HEMTs). To this end, a novel measurement setup is proposed to evaluate the on-the-fly evolution of both parameters during conventional switch-mode operations. The measurements performed at V-DS= 200 V show that the dynamic-R-ON and dynamic-Q(OSS) present similar exponential transients and time constants, potentially explained by the ionization of C-related acceptors in the GaN buffer. The same activation energy (E-A) has been observed for both Q(OSS) and R-ON, suggesting that their drifts are related to the same physical mechanism. The characterization has also been performed at different V-DS levels, indicating that the observed correlation holds in the entire range up to 520 V.
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