The impact of substrate connection on dynamic-RON degradation of 650 V packaged GaN HEMTs is investigated in this work. A custom setup is used to characterize the Devices Under Test (DUTs) under both static off-state stress and continuous switching stress. For both conditions, the Floating Substrate configuration showed larger RON-degradation with respect to the Grounded one, due to the back-gating effect experienced by the DUT when the Substrate terminal is not forced to ground. Furthermore, the impact of Drain-connected substrate is investigated, showing worse performance than Grounded and Floating configurations. This provides a physical explanation for the need to short-circuit Substrate and Source terminals under switch-mode operations.
Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs / Cioni, M., Giorgino, G., Cappellini, G., Chini, A., Miccoli, C., Castagna, M.E., Abbisogni, A., Contarino, A., Pizzardi, F.A., Smerzi, S., Iucolano, F.. - In: POWER ELECTRONIC DEVICES AND COMPONENTS. - ISSN 2772-3704. - 10:(2025), pp. 1-6. [10.1016/j.pedc.2025.100083]
Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs
Giorgino G.;Chini A.;
2025
Abstract
The impact of substrate connection on dynamic-RON degradation of 650 V packaged GaN HEMTs is investigated in this work. A custom setup is used to characterize the Devices Under Test (DUTs) under both static off-state stress and continuous switching stress. For both conditions, the Floating Substrate configuration showed larger RON-degradation with respect to the Grounded one, due to the back-gating effect experienced by the DUT when the Substrate terminal is not forced to ground. Furthermore, the impact of Drain-connected substrate is investigated, showing worse performance than Grounded and Floating configurations. This provides a physical explanation for the need to short-circuit Substrate and Source terminals under switch-mode operations.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
