The impact of substrate connection on dynamic-RON degradation of 650 V packaged GaN HEMTs is investigated in this work. A custom setup is used to characterize the Devices Under Test (DUTs) under both static off-state stress and continuous switching stress. For both conditions, the Floating Substrate configuration showed larger RON-degradation with respect to the Grounded one, due to the back-gating effect experienced by the DUT when the Substrate terminal is not forced to ground. Furthermore, the impact of Drain-connected substrate is investigated, showing worse performance than Grounded and Floating configurations. This provides a physical explanation for the need to short-circuit Substrate and Source terminals under switch-mode operations.
Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs / Cioni, M.; Giorgino, G.; Cappellini, G.; Chini, A.; Miccoli, C.; Castagna, M. E.; Abbisogni, A.; Contarino, A.; Pizzardi, F. A.; Smerzi, S.; Iucolano, F.. - In: POWER ELECTRONIC DEVICES AND COMPONENTS. - ISSN 2772-3704. - 10:(2025), pp. 1-6. [10.1016/j.pedc.2025.100083]
Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs
Giorgino G.;Chini A.;
2025
Abstract
The impact of substrate connection on dynamic-RON degradation of 650 V packaged GaN HEMTs is investigated in this work. A custom setup is used to characterize the Devices Under Test (DUTs) under both static off-state stress and continuous switching stress. For both conditions, the Floating Substrate configuration showed larger RON-degradation with respect to the Grounded one, due to the back-gating effect experienced by the DUT when the Substrate terminal is not forced to ground. Furthermore, the impact of Drain-connected substrate is investigated, showing worse performance than Grounded and Floating configurations. This provides a physical explanation for the need to short-circuit Substrate and Source terminals under switch-mode operations.
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