GIORGINO, GIOVANNI
 Distribuzione geografica
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Continente #
AS - Asia 1.004
NA - Nord America 759
EU - Europa 401
SA - Sud America 97
Continente sconosciuto - Info sul continente non disponibili 27
AF - Africa 21
Totale 2.309
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Nazione #
US - Stati Uniti d'America 717
SG - Singapore 347
CN - Cina 290
IT - Italia 220
BR - Brasile 73
BD - Bangladesh 70
KR - Corea 66
HK - Hong Kong 64
VN - Vietnam 64
GB - Regno Unito 34
FR - Francia 31
DE - Germania 25
TW - Taiwan 23
CA - Canada 21
RU - Federazione Russa 21
IN - India 20
FI - Finlandia 15
MX - Messico 11
NL - Olanda 10
ZA - Sudafrica 10
ID - Indonesia 9
AR - Argentina 8
IQ - Iraq 8
ES - Italia 7
JP - Giappone 7
PL - Polonia 7
CO - Colombia 6
LT - Lituania 6
AT - Austria 5
MA - Marocco 5
AE - Emirati Arabi Uniti 4
DK - Danimarca 4
PK - Pakistan 4
SA - Arabia Saudita 4
SE - Svezia 4
TR - Turchia 4
CH - Svizzera 3
EC - Ecuador 3
MY - Malesia 3
PE - Perù 3
TT - Trinidad e Tobago 3
UZ - Uzbekistan 3
AZ - Azerbaigian 2
BE - Belgio 2
CR - Costa Rica 2
DZ - Algeria 2
ET - Etiopia 2
GT - Guatemala 2
IE - Irlanda 2
KE - Kenya 2
KW - Kuwait 2
MD - Moldavia 2
PH - Filippine 2
AL - Albania 1
BB - Barbados 1
BH - Bahrain 1
BO - Bolivia 1
GP - Guadalupe 1
GR - Grecia 1
IL - Israele 1
KZ - Kazakistan 1
LB - Libano 1
LK - Sri Lanka 1
OM - Oman 1
PY - Paraguay 1
SR - Suriname 1
SV - El Salvador 1
TH - Thailandia 1
TJ - Tagikistan 1
UA - Ucraina 1
UY - Uruguay 1
Totale 2.282
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Città #
Singapore 230
Hefei 153
Santa Clara 128
San Jose 109
Milan 83
Council Bluffs 67
Ashburn 61
Hong Kong 59
Seoul 56
Los Angeles 39
London 27
Beijing 19
Chicago 19
Hanoi 19
Boardman 17
Ho Chi Minh City 16
New York 15
The Dalles 15
Dallas 14
Kent 13
Buffalo 12
Modena 12
Shanghai 11
Bologna 9
Helsinki 9
Taipei 8
Brooklyn 7
Frankfurt am Main 7
Guangzhou 7
Reggio Emilia 7
Johannesburg 6
Lauterbourg 6
Nice 6
Orem 6
Salt Lake City 6
Seattle 6
Turin 6
Baghdad 5
Dijon 5
Formigine 5
Haiphong 5
Lappeenranta 5
Moscow 5
Padua 5
Rome 5
Tours 5
Warsaw 5
Amsterdam 4
Curitiba 4
Delhi 4
Jakarta 4
Las Rozas de Madrid 4
Nuremberg 4
Odense 4
Phoenix 4
Redondo Beach 4
San Francisco 4
Shenzhen 4
Stockholm 4
Toronto 4
Zhongli District 4
Bern 3
Bilbao 3
Biên Hòa 3
Buk-gu 3
Cavallino 3
Changsha 3
Charlotte 3
Columbus 3
Dhaka 3
Essen 3
Gladbeck 3
Jeddah 3
Kowloon 3
Lonato 3
Montreal 3
Nanjing 3
Padova 3
Palermo 3
Paris 3
Paternò 3
Piacenza 3
Querétaro 3
São Paulo 3
Tashkent 3
Vienna 3
Wallingford 3
Windsor 3
Yongin-si 3
Abbeville 2
Addis Ababa 2
Alhambra 2
Baku 2
Baltimore 2
Bari 2
Bengaluru 2
Boston 2
Brantford 2
Bắc Ninh 2
Canary Wharf 2
Totale 1.502
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Nome #
Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies 193
Impact of Process Variations on Back-Bias Effect in 100V p-GaN Gate AlGaN/GaN HEMTs 189
Impact of Gate and Drain Leakage on VTHDrift and Dynamic-RONof 100V p-GaN Gate AlGaN/GaN HEMTs 185
Temperature Effect on RON-degradation induced by Off-state Drain Voltage Stress 176
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 170
GaN on Si Power and RF Devices and Application 150
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs 139
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 138
Analysis of Dynamic-Ron and VTH shift in on-wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 136
Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs 126
Improved High Temperature Behaviour of On-Resistance in 100V p-GaN HEMTs 125
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 114
On-Wafer RONDegradation Analysis of 100 v p-GaN HEMTs Emulating Low-and High-Side Operation in Half Bridge Circuits 111
Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation 57
Caratterizzazione e simulazioni TCAD di dispositivi di potenza in nitruro di gallio 55
Impact of Substrate connection on Dynamic-RON drift of 650V normally-off Monolithic Bidirectional AlGaN/GaN HEMT 53
Impact of SiN Passivation on Dynamic-RON Degradation of 100 V p-GaN Gate AlGaN/GaN HEMTs 45
On the Correlation Between Dynamic-QOSS and Dynamic-RON in GaN-Based HEMTs 39
Effect of 2DEG density and Drain/Source Field Plate design on dynamic-RON of 650 V AlGaN/GaN HEMTs 25
Preliminary Evaluation of PBTI and Back-Effect interplay in 100 V p-GaN gate AlGaN/GaN HEMTs 23
Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs 22
Evidence of Carbon Doping Effect on VTHDrift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs 20
On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs 18
Totale 2.309
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Categoria #
all - tutte 9.166
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.166
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202470 0 0 0 0 0 0 0 33 4 2 5 26
2024/2025602 18 3 8 60 92 73 32 48 64 28 82 94
2025/20261.346 90 95 106 124 193 53 163 53 97 166 103 103
2026/2027291 120 110 61 0 0 0 0 0 0 0 0 0
Totale 2.309